JP5903504B2 - コンフォーマル金属ケイ化物フィルムを形成する方法 - Google Patents
コンフォーマル金属ケイ化物フィルムを形成する方法 Download PDFInfo
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- JP5903504B2 JP5903504B2 JP2014552405A JP2014552405A JP5903504B2 JP 5903504 B2 JP5903504 B2 JP 5903504B2 JP 2014552405 A JP2014552405 A JP 2014552405A JP 2014552405 A JP2014552405 A JP 2014552405A JP 5903504 B2 JP5903504 B2 JP 5903504B2
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- 229910052751 metal Inorganic materials 0.000 title claims description 179
- 239000002184 metal Substances 0.000 title claims description 173
- 238000000034 method Methods 0.000 title claims description 129
- 229910021332 silicide Inorganic materials 0.000 title claims description 88
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 title claims description 88
- 239000000758 substrate Substances 0.000 claims description 195
- -1 titanium halide Chemical class 0.000 claims description 49
- 238000000151 deposition Methods 0.000 claims description 33
- 230000008021 deposition Effects 0.000 claims description 29
- 239000002243 precursor Substances 0.000 claims description 24
- 239000010936 titanium Substances 0.000 claims description 24
- 229910052715 tantalum Inorganic materials 0.000 claims description 22
- 229910021341 titanium silicide Inorganic materials 0.000 claims description 16
- 229910052719 titanium Inorganic materials 0.000 claims description 15
- 238000000137 annealing Methods 0.000 claims description 14
- 229910052710 silicon Inorganic materials 0.000 claims description 13
- 239000010703 silicon Substances 0.000 claims description 13
- 229910052750 molybdenum Inorganic materials 0.000 claims description 12
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 11
- VKTGMGGBYBQLGR-UHFFFAOYSA-N [Si].[V].[V].[V] Chemical compound [Si].[V].[V].[V] VKTGMGGBYBQLGR-UHFFFAOYSA-N 0.000 claims description 10
- YXTPWUNVHCYOSP-UHFFFAOYSA-N bis($l^{2}-silanylidene)molybdenum Chemical compound [Si]=[Mo]=[Si] YXTPWUNVHCYOSP-UHFFFAOYSA-N 0.000 claims description 10
- 239000011733 molybdenum Substances 0.000 claims description 10
- 229910021344 molybdenum silicide Inorganic materials 0.000 claims description 10
- 229910052721 tungsten Inorganic materials 0.000 claims description 10
- 229910052720 vanadium Inorganic materials 0.000 claims description 9
- 239000010937 tungsten Substances 0.000 claims description 8
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 claims description 8
- 229910021342 tungsten silicide Inorganic materials 0.000 claims description 8
- 229910052756 noble gas Inorganic materials 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 95
- 239000007789 gas Substances 0.000 description 94
- 239000000463 material Substances 0.000 description 26
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 12
- 239000001257 hydrogen Substances 0.000 description 12
- 229910052739 hydrogen Inorganic materials 0.000 description 12
- 238000012876 topography Methods 0.000 description 11
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 7
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 7
- 239000006227 byproduct Substances 0.000 description 7
- 238000006243 chemical reaction Methods 0.000 description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- 239000011261 inert gas Substances 0.000 description 6
- 229910008484 TiSi Inorganic materials 0.000 description 5
- 229910052786 argon Inorganic materials 0.000 description 5
- 229910016006 MoSi Inorganic materials 0.000 description 4
- 238000000231 atomic layer deposition Methods 0.000 description 4
- 229910001507 metal halide Inorganic materials 0.000 description 4
- 150000005309 metal halides Chemical class 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 230000000737 periodic effect Effects 0.000 description 3
- 239000002356 single layer Substances 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 238000006722 reduction reaction Methods 0.000 description 2
- 229920006395 saturated elastomer Polymers 0.000 description 2
- 238000006467 substitution reaction Methods 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910003811 SiGeC Inorganic materials 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- 229910004529 TaF 5 Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 239000003638 chemical reducing agent Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910003465 moissanite Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 239000003870 refractory metal Substances 0.000 description 1
- 238000009738 saturating Methods 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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- C23C16/45536—Use of plasma, radiation or electromagnetic fields
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- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System
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Description
本出願は、2012年1月27日に出願された米国仮特許出願第61/591,843号(参照番号 TTCA−389Pro)に関し、及びその優先権を主張し、その全ての内容は、参照により本明細書に組み込まれる。本出願は、2012年3月22日に出願された米国特許出願第13/427,343号(参照番号 TTCA−389)に関し、及びその優先権を主張し、その全ての内容は、参照により本明細書に組み込まれる。
本発明は、一般に、蒸着を使用して、基板上にコンフォーマル(conformal)金属ケイ化物フィルムを形成する方法に関する。前記基板は、半導体デバイスで使用される、高いアスペクト比を有する深いトレンチを含む。
半導体産業においては、より速く、より低出力のマイクロプロセッサ及びデジタル回路に対する要求に応えるために、マイクロ電子工学デバイスの最小形状が、超微細化に近づきつつある。例えば、低抵抗性高融点金属ケイ化物層は、ダイナミックランダムアクセスメモリ(DRAM)及び強化(enhanced)DRAM(EDRAM)製造におけるゲートスタックの一部として広く使用されている。低抵抗性金属ケイ化物層の別の適用は、深いトレンチDRAMのキャパシタにおけるもの、又は積層DRAMセルのビア(via)におけるものである。両方の適用は、内部電極(プラグ、深いトレンチ−DRAM)の直列抵抗又はビア(積層DRAM)が、逆の基本原則(inverse ground rule)の2乗に比例して増加するという事実に悩まされている。定数キャパシタンスの要件により、先進的(advanced)DRAMにおいてより深いトレンチ(又は、それぞれより高いスタック)がもたらされるため、この効果はさらに強化される。
基板上にコンフォーマル金属ケイ化物層を形成するための方法を、いくつかの態様において説明する。前記金属ケイ化物層は、例えば、ケイ化チタン(例えば、TiSixなど)、ケイ化モリブデン(例えば、MoSixなど)、ケイ化タングステン(例えば、WSixなど)、ケイ化タンタル(例えば、TaSixなど)、又はケイ化バナジウム(例えば、VSixなど)、あるいはそれらの2種又は3種以上の組み合わせなどを含むことができる。
Claims (26)
- 基板上に金属ケイ化物層を形成する方法であって、以下:
a)前記基板をプロセスチャンバに提供すること;
b)前記基板を、第一基板温度で、金属前駆体を含有する成膜ガスから発生したプラズマに曝露し、ここで、前記プラズマ曝露により、自己制御プロセスにおいて、コンフォーマル金属含有層が前記基板上に形成されること;及び
c)前記金属含有層を、第二基板温度で、プラズマの非存在下での還元ガスに曝露し、ここで、b)及びc)を、少なくとも1回行って前記金属ケイ化物層を形成し、及びここで、前記成膜ガスは、前記還元ガスを含まないこと、
を含む、方法。 - 前記金属前駆体が、ハロゲン化チタン、ハロゲン化モリブデン、ハロゲン化タングステン、ハロゲン化タンタル、又はハロゲン化バナジウム、あるいはそれらの2種又は3種以上の組み合わせを含む、請求項1に記載の方法。
- 前記金属ケイ化物層が、ケイ化チタン、ケイ化モリブデン、ケイ化タングステン、ケイ化タンタル、又はケイ化バナジウム、あるいはそれらの2種又は3種以上の組み合わせを含む、請求項1に記載の方法。
- 前記金属前駆体が、ハロゲン化チタン、ハロゲン化モリブデン、ハロゲン化タンタル、又はハロゲン化バナジウム、あるいはそれらの2種又は3種以上の組み合わせを含む、請求項1に記載の方法。
- 前記金属ケイ化物層が、ケイ化チタン、ケイ化モリブデン、ケイ化タンタル、又はケイ化バナジウム、あるいはそれらの2種又は3種以上の組み合わせを含む、請求項1に記載の方法。
- 前記金属ケイ化物層が、前記基板に形成された深いトレンチの表面の上に、コンフォーマルに成膜される、請求項1に記載の方法。
- 前記深いトレンチが、約50nm〜100nmの幅、約2000nm〜5000nmの深さ、及び約40:1〜約100:1のアスペクト比を有する、請求項6に記載の方法。
- 前記金属前駆体がハロゲン化チタンを含み、前記還元ガスがH2を含み、前記金属ケイ化物層がケイ化チタンを含む、請求項1に記載の方法。
- 前記第一及び第二基板温度が、約450℃〜約650℃である、請求項8に記載の方法。
- 基板上に金属ケイ化物フィルムを形成する方法であって、以下:
a)前記基板をプロセスチャンバに提供すること;
b)前記基板を、第一基板温度で、金属前駆体を含有する成膜ガスから発生したプラズマに曝露し、ここで、前記プラズマ曝露により、自己制御プロセスにおいて、コンフォーマル金属含有層が前記基板上に成膜されること;
c)前記金属含有層を、第二基板温度で、プラズマの非存在下での還元ガスに曝露し、ここで、b)及びc)を、少なくとも1回行って前記基板上に金属フィルムを形成し、及びここで、前記成膜ガスは、前記還元ガスを含まないこと;及び
d)前記基板を、第三基板温度でアニーリングして金属ケイ化物フィルムを形成し、ここで、前記第三基板温度は、前記第二基板温度より大きいこと、
を含む、方法。 - d)が:
前記アニーリングの前に、前記金属フィルム上にシリコンを成膜すること、
をさらに含む、請求項10に記載の方法。 - 前記成膜ガスが、ハロゲン化チタン、ハロゲン化モリブデン、ハロゲン化タングステン、ハロゲン化タンタル、又はハロゲン化バナジウム、あるいはそれらの2種又は3種以上の組み合わせを含む、請求項10に記載の方法。
- 前記金属ケイ化物フィルムが、ケイ化チタン、ケイ化モリブデン、ケイ化タングステン、ケイ化タンタル、又はケイ化バナジウム、あるいはそれらの2種又は3種以上の組み合わせを含む、請求項10に記載の方法。
- 前記金属ケイ化物フィルムが、前記基板に形成された深いトレンチの表面の上に、コンフォーマルに成膜される、請求項10に記載の方法。
- 前記成膜ガスが、ハロゲン化チタン、ハロゲン化モリブデン、ハロゲン化タンタル、又はハロゲン化バナジウム、あるいはそれらの2種又は3種以上の組み合わせを含む、請求項10に記載の方法。
- 前記金属ケイ化物フィルムが、ケイ化チタン、ケイ化モリブデン、ケイ化タンタル、又はケイ化バナジウム、あるいはそれらの2種又は3種以上の組み合わせを含む、請求項10に記載の方法。
- 前記深いトレンチが、約50nm〜100nmの幅、約2000nm〜5000nmの深さ、及び約40:1〜約100:1のアスペクト比を有する、請求項14に記載の方法。
- 前記金属前駆体がハロゲン化チタンを含み、前記還元ガスがH2を含み、前記金属ケイ化物層がケイ化チタンを含む、請求項10に記載の方法。
- 前記第一及び第二基板温度が、約450℃より低い、請求項18に記載の方法。
- 基板上に金属ケイ化物フィルムを形成する方法であって、以下:
a)基板をプロセスチャンバに提供すること;
b)前記基板を、第一基板温度で、プラズマの非存在下で金属前駆体を含む成膜ガスに熱的に曝露し、ここで、前記熱曝露により、自己制御プロセスにおいて、前記基板上にコンフォーマル金属含有層が形成されること;
c)希ガスのみからなるプラズマに曝露することにより、第二基板温度で、前記金属含有層を改修すること;
d)前記改修された金属含有層を、第二基板温度で、プラズマの非存在下での還元ガスに曝露し、ここで、前記b)〜d)は、続いて少なくとも1回行って、前記金属ケイ化物フィルムを形成すること、
を含む、方法。 - 前記成膜ガスが、ハロゲン化チタン、ハロゲン化モリブデン、ハロゲン化タングステン、ハロゲン化タンタル、又はハロゲン化バナジウム、あるいはそれらの2種又は3種以上の組み合わせを含む、請求項20に記載の方法。
- 前記金属ケイ化物フィルムが、ケイ化チタン、ケイ化モリブデン、ケイ化タングステン、ケイ化タンタル、又はケイ化バナジウム、あるいはそれらの2種又は3種以上の組み合わせを含む、請求項20に記載の方法。
- 前記金属ケイ化物フィルムが、前記基板に形成された深いトレンチの表面の上に、コンフォーマルに成膜される、請求項20に記載の方法。
- 前記深いトレンチが、約50nm〜100nmの幅、約2000nm〜5000nmの深さ、及び約40:1〜約100:1のアスペクト比を有する、請求項20に記載の方法。
- 前記金属前駆体がハロゲン化チタンを含み、前記還元ガスがH2を含み、前記金属ケイ化物層がケイ化チタンを含む、請求項20に記載の方法。
- 前記第一及び第二基板温度が、約450℃〜約650℃である、請求項25に記載の方法。
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US13/427,343 US8785310B2 (en) | 2012-01-27 | 2012-03-22 | Method of forming conformal metal silicide films |
PCT/US2013/023303 WO2013112941A1 (en) | 2012-01-27 | 2013-01-25 | Method of forming conformal metal silicide films |
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US10204764B2 (en) * | 2014-10-28 | 2019-02-12 | Applied Materials, Inc. | Methods for forming a metal silicide interconnection nanowire structure |
WO2016111832A1 (en) * | 2015-01-09 | 2016-07-14 | Applied Materials, Inc. | Laminate and core shell formation of silicide nanowire |
US10199230B2 (en) * | 2015-05-01 | 2019-02-05 | Applied Materials, Inc. | Methods for selective deposition of metal silicides via atomic layer deposition cycles |
US9972504B2 (en) * | 2015-08-07 | 2018-05-15 | Lam Research Corporation | Atomic layer etching of tungsten for enhanced tungsten deposition fill |
KR102441431B1 (ko) | 2016-06-06 | 2022-09-06 | 어플라이드 머티어리얼스, 인코포레이티드 | 표면을 갖는 기판을 프로세싱 챔버에 포지셔닝하는 단계를 포함하는 프로세싱 방법 |
US10535527B2 (en) * | 2017-07-13 | 2020-01-14 | Applied Materials, Inc. | Methods for depositing semiconductor films |
KR20210130237A (ko) * | 2019-03-20 | 2021-10-29 | 도쿄엘렉트론가부시키가이샤 | 반도체 소자를 위한 금속 규화물을 선택적으로 형성하는 방법 |
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US20230115130A1 (en) * | 2021-10-13 | 2023-04-13 | Applied Materials, Inc. | Methods for preparing metal silicides |
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US20030123216A1 (en) | 2001-12-27 | 2003-07-03 | Yoon Hyungsuk A. | Deposition of tungsten for the formation of conformal tungsten silicide |
US6911391B2 (en) | 2002-01-26 | 2005-06-28 | Applied Materials, Inc. | Integration of titanium and titanium nitride layers |
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US7144806B1 (en) | 2002-10-23 | 2006-12-05 | Novellus Systems, Inc. | ALD of tantalum using a hydride reducing agent |
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