JP5886128B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP5886128B2
JP5886128B2 JP2012105342A JP2012105342A JP5886128B2 JP 5886128 B2 JP5886128 B2 JP 5886128B2 JP 2012105342 A JP2012105342 A JP 2012105342A JP 2012105342 A JP2012105342 A JP 2012105342A JP 5886128 B2 JP5886128 B2 JP 5886128B2
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Japan
Prior art keywords
transistor
oxide semiconductor
oxide
terminal
film
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Expired - Fee Related
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JP2012105342A
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Japanese (ja)
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JP2012257210A (ja
JP2012257210A5 (enExample
Inventor
誠一 米田
誠一 米田
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2012105342A priority Critical patent/JP5886128B2/ja
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Publication of JP2012257210A5 publication Critical patent/JP2012257210A5/ja
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C14/00—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down
    • G11C14/0054—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down in which the volatile element is a SRAM cell
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices

Landscapes

  • Thin Film Transistor (AREA)
  • Shift Register Type Memory (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Logic Circuits (AREA)
JP2012105342A 2011-05-13 2012-05-02 半導体装置 Expired - Fee Related JP5886128B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2012105342A JP5886128B2 (ja) 2011-05-13 2012-05-02 半導体装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2011108340 2011-05-13
JP2011108340 2011-05-13
JP2012105342A JP5886128B2 (ja) 2011-05-13 2012-05-02 半導体装置

Publications (3)

Publication Number Publication Date
JP2012257210A JP2012257210A (ja) 2012-12-27
JP2012257210A5 JP2012257210A5 (enExample) 2015-05-14
JP5886128B2 true JP5886128B2 (ja) 2016-03-16

Family

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Family Applications (1)

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JP2012105342A Expired - Fee Related JP5886128B2 (ja) 2011-05-13 2012-05-02 半導体装置

Country Status (3)

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US (1) US9047947B2 (enExample)
JP (1) JP5886128B2 (enExample)
TW (1) TWI570743B (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
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KR102081792B1 (ko) 2011-05-19 2020-02-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 연산회로 및 연산회로의 구동방법
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KR102325158B1 (ko) * 2014-01-30 2021-11-10 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치, 전자 기기, 및 반도체 장치의 제작 방법
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