JP5839958B2 - 半導体不揮発性メモリ装置 - Google Patents
半導体不揮発性メモリ装置 Download PDFInfo
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- JP5839958B2 JP5839958B2 JP2011254290A JP2011254290A JP5839958B2 JP 5839958 B2 JP5839958 B2 JP 5839958B2 JP 2011254290 A JP2011254290 A JP 2011254290A JP 2011254290 A JP2011254290 A JP 2011254290A JP 5839958 B2 JP5839958 B2 JP 5839958B2
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- 239000004065 semiconductor Substances 0.000 title claims description 60
- 239000012535 impurity Substances 0.000 claims description 26
- 230000000779 depleting effect Effects 0.000 claims description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 16
- 229910052814 silicon oxide Inorganic materials 0.000 description 16
- 230000005641 tunneling Effects 0.000 description 15
- 229910052581 Si3N4 Inorganic materials 0.000 description 12
- 239000002131 composite material Substances 0.000 description 12
- 230000005684 electric field Effects 0.000 description 12
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 12
- 230000008878 coupling Effects 0.000 description 10
- 238000010168 coupling process Methods 0.000 description 10
- 238000005859 coupling reaction Methods 0.000 description 10
- 230000014759 maintenance of location Effects 0.000 description 10
- 239000000758 substrate Substances 0.000 description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 9
- 230000007547 defect Effects 0.000 description 9
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 9
- 229920005591 polysilicon Polymers 0.000 description 9
- 229910052710 silicon Inorganic materials 0.000 description 9
- 239000010703 silicon Substances 0.000 description 9
- 230000015572 biosynthetic process Effects 0.000 description 7
- 230000002950 deficient Effects 0.000 description 6
- 230000006870 function Effects 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 230000006866 deterioration Effects 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 2
- 238000006731 degradation reaction Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000007774 longterm Effects 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
- H01L29/7881—Programmable transistors with only two possible levels of programmation
- H01L29/7883—Programmable transistors with only two possible levels of programmation charging by tunnelling of carriers, e.g. Fowler-Nordheim tunnelling
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42324—Gate electrodes for transistors with a floating gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66825—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a floating gate
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Non-Volatile Memory (AREA)
- Read Only Memory (AREA)
- Semiconductor Memories (AREA)
- Electrodes Of Semiconductors (AREA)
Description
01の信頼性を向上させ、より多くのデータ書き換え回数やデータ保持時間を達成することができる。
201 ソース領域
202 ドレイン領域
251 空乏層
301 ゲート絶縁膜
302 空乏化電極絶縁膜
401 トンネル絶縁膜
501 フローティングゲート電極
601 コントロール絶縁膜
701 コントロールゲート電極
801 トンネル領域
971 空乏化電極
Claims (7)
- 第1導電型の半導体表面領域の表面に、互いに間隔を置いて設けられた第2導電型のソース領域とドレイン領域と、前記ソース領域と前記ドレイン領域との間の前記半導体領域表面であるチャネル形成領域と、前記ソース領域と前記ドレイン領域と前記チャネル形成領域の上にゲート絶縁膜を介して設けられたフローティングゲート電極と、前記フローティングゲート電極とコントロール絶縁膜を介して容量結合したコントロールゲート電極とからなる電気的書き換え可能な半導体不揮発性メモリにおいて、
前記ドレイン領域内のトンネル領域にはトンネル絶縁膜が設けられており、前記トンネル絶縁膜を介して前記フローティングゲート電極が配置されており、前記ドレイン領域の前記トンネル領域周囲部分は掘り下げられており、掘り下げられた前記ドレイン領域には、空乏化電極絶縁膜を介して、前記トンネル領域のエッジ部を空乏化するための電位を自由に変えることが可能な空乏化電極が配置されている半導体不揮発性メモリ装置。 - 前記トンネル領域の前記トンネル絶縁膜は、前記ドレイン領域の表面から前記ドレイン領域の内部へ掘り下げられた面に形成されている請求項1記載の半導体不揮発性メモリ装置。
- 前記空乏化電極は、複数に分割されて前記空乏化電極絶縁膜を介して前記トンネル領域の周囲に配置されている請求項1記載の半導体不揮発性メモリ装置。
- 第1導電型の半導体表面領域の表面に、互いに間隔を置いて設けられた第2導電型のソース領域とドレイン領域と、前記ソース領域と前記ドレイン領域との間の前記半導体領域表面であるチャネル形成領域と、前記ソース領域と前記ドレイン領域と前記チャネル形成領域の上にゲート絶縁膜を介して設けられたフローティングゲート電極と、前記フローティングゲート電極とコントロールゲート絶縁膜を介して容量結合したコントロールゲート電極とからなる電気的書き換え可能な半導体不揮発性メモリにおいて、
前記ドレイン領域内のトンネル領域にはトンネル絶縁膜が設けられており、前記トンネル絶縁膜を介して前記フローティングゲート電極が配置されており、前記トンネル絶縁膜の近傍であって、前記トンネル絶縁膜上の前記フローティングゲート電極の周囲に空乏化電極絶縁膜を介して、前記トンネル領域のエッジ部を空乏化するための電位を自由に変えることが可能な空乏化電極が配置されている半導体不揮発性メモリ装置。 - 前記空乏化電極は、複数に分割されて前記トンネル領域の前記フローティングゲート電極の周囲に前記空乏化電極絶縁膜を介して配置されている請求項4記載の半導体不揮発性メモリ装置。
- 第1導電型の半導体表面領域の表面に、互いに間隔を置いて設けられた第2導電型のソース領域とドレイン領域と、前記ソース領域と前記ドレイン領域との間の前記半導体領域表面であるチャネル形成領域と、前記ソース領域と前記ドレイン領域と前記チャネル形成領域の上にゲート絶縁膜を介して設けられたフローティングゲート電極と、前記フローティングゲート電極とコントロールゲート絶縁膜を介して容量結合したコントロールゲート電極とからなる電気的書き換え可能な半導体不揮発性メモリにおいて、
前記ドレイン領域内のトンネル領域にはトンネル絶縁膜が設けられており、前記トンネル領域上には、前記トンネル絶縁膜を介して前記フローティングゲート電極が配置されており、前記トンネル領域の近傍には前記ドレイン領域および前記トンネル領域のエッジ部に空乏層を発生させるための第1導電型の高不純物濃度領域が形成されており、前記第1導電型の高不純物濃度領域の電位は自在に設定可能である半導体不揮発性メモリ装置。 - 前記第1導電型の高不純物濃度領域は複数に分割されて、前記トンネル領域の前記フローティングゲート電極の周囲に配置されており、各々の前記第1導電型の高不純物濃度領域には独立した異なる電位を設定できる請求項6記載の半導体不揮発性メモリ装置。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011254290A JP5839958B2 (ja) | 2010-12-29 | 2011-11-21 | 半導体不揮発性メモリ装置 |
TW100146236A TWI545730B (zh) | 2010-12-29 | 2011-12-14 | Semiconductor nonvolatile memory device |
US13/374,281 US8575679B2 (en) | 2010-12-29 | 2011-12-20 | Nonvolatile semiconductor memory device |
KR1020110144482A KR101769626B1 (ko) | 2010-12-29 | 2011-12-28 | 반도체 불휘발성 메모리 장치 |
CN201110447810.8A CN102544111B (zh) | 2010-12-29 | 2011-12-28 | 半导体非易失性存储装置 |
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010294480 | 2010-12-29 | ||
JP2010294480 | 2010-12-29 | ||
JP2010294479 | 2010-12-29 | ||
JP2010294479 | 2010-12-29 | ||
JP2011254290A JP5839958B2 (ja) | 2010-12-29 | 2011-11-21 | 半導体不揮発性メモリ装置 |
Publications (3)
Publication Number | Publication Date |
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JP2012151445A JP2012151445A (ja) | 2012-08-09 |
JP2012151445A5 JP2012151445A5 (ja) | 2014-10-30 |
JP5839958B2 true JP5839958B2 (ja) | 2016-01-06 |
Family
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JP2011254290A Expired - Fee Related JP5839958B2 (ja) | 2010-12-29 | 2011-11-21 | 半導体不揮発性メモリ装置 |
Country Status (5)
Country | Link |
---|---|
US (1) | US8575679B2 (ja) |
JP (1) | JP5839958B2 (ja) |
KR (1) | KR101769626B1 (ja) |
CN (1) | CN102544111B (ja) |
TW (1) | TWI545730B (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
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CN104638018B (zh) * | 2015-02-05 | 2018-04-06 | 上海集成电路研发中心有限公司 | 一种半浮栅器件及其制备方法 |
KR102643521B1 (ko) * | 2016-09-29 | 2024-03-06 | 에스케이하이닉스 주식회사 | 이미지 센서 및 그 제조방법 |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07120719B2 (ja) * | 1987-12-02 | 1995-12-20 | 三菱電機株式会社 | 半導体記憶装置 |
JP2691204B2 (ja) | 1987-12-16 | 1997-12-17 | セイコーインスツルメンツ株式会社 | 半導体不揮発性メモリ |
JPH01160057A (ja) * | 1987-12-17 | 1989-06-22 | Oki Electric Ind Co Ltd | 不揮発性メモリ及びその製造方法 |
JPH03218075A (ja) * | 1990-01-23 | 1991-09-25 | Matsushita Electron Corp | 半導体記憶装置の製造方法 |
US5677637A (en) * | 1992-03-25 | 1997-10-14 | Hitachi, Ltd. | Logic device using single electron coulomb blockade techniques |
JPH06350094A (ja) * | 1993-04-12 | 1994-12-22 | Mitsubishi Electric Corp | 不揮発性半導体メモリ |
KR0161398B1 (ko) * | 1995-03-13 | 1998-12-01 | 김광호 | 고내압 트랜지스터 및 그 제조방법 |
US5633518A (en) * | 1995-07-28 | 1997-05-27 | Zycad Corporation | Nonvolatile reprogrammable interconnect cell with FN tunneling and programming method thereof |
DE19620032C2 (de) * | 1996-05-17 | 1998-07-09 | Siemens Ag | Halbleiterbauelement mit Kompensationsimplantation und Herstellverfahren |
JPH10289957A (ja) * | 1997-04-15 | 1998-10-27 | Seiko Epson Corp | 半導体装置およびその製造方法 |
US6756272B1 (en) * | 1998-10-01 | 2004-06-29 | Nec Corporation | Method of manufacturing non-volatile semiconductor memory device |
US6369422B1 (en) * | 2001-05-01 | 2002-04-09 | Atmel Corporation | Eeprom cell with asymmetric thin window |
KR100471187B1 (ko) * | 2003-01-24 | 2005-03-10 | 삼성전자주식회사 | 이이피롬 셀 및 그 제조방법 |
US7307309B2 (en) * | 2004-03-04 | 2007-12-11 | Texas Instruments Incorporated | EEPROM with etched tunneling window |
JP2010050142A (ja) * | 2008-08-19 | 2010-03-04 | Oki Semiconductor Co Ltd | Eepromの製造方法 |
WO2018091940A1 (en) | 2016-11-18 | 2018-05-24 | Nikon Corporation | Optical component comprising liquid crystals in a blue phase and process for making such optical component |
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2011
- 2011-11-21 JP JP2011254290A patent/JP5839958B2/ja not_active Expired - Fee Related
- 2011-12-14 TW TW100146236A patent/TWI545730B/zh not_active IP Right Cessation
- 2011-12-20 US US13/374,281 patent/US8575679B2/en not_active Expired - Fee Related
- 2011-12-28 KR KR1020110144482A patent/KR101769626B1/ko active IP Right Grant
- 2011-12-28 CN CN201110447810.8A patent/CN102544111B/zh not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
KR20120076323A (ko) | 2012-07-09 |
TWI545730B (zh) | 2016-08-11 |
US20120168844A1 (en) | 2012-07-05 |
KR101769626B1 (ko) | 2017-08-18 |
CN102544111B (zh) | 2015-12-09 |
TW201236141A (en) | 2012-09-01 |
JP2012151445A (ja) | 2012-08-09 |
US8575679B2 (en) | 2013-11-05 |
CN102544111A (zh) | 2012-07-04 |
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