JP5837689B2 - 光子計数ｕｖ−ａｐｄ - Google Patents

光子計数ｕｖ−ａｐｄ Download PDF

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JP5837689B2
JP5837689B2 JP2014519066A JP2014519066A JP5837689B2 JP 5837689 B2 JP5837689 B2 JP 5837689B2 JP 2014519066 A JP2014519066 A JP 2014519066A JP 2014519066 A JP2014519066 A JP 2014519066A JP 5837689 B2 JP5837689 B2 JP 5837689B2
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epitaxial layer
apd
doping type
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JP2014518458A (ja
JP2014518458A5 (enExample
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ドーテ，ヘンリ
クチュール，マーティン
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エクセリタス カナダ，インコーポレイテッド
エクセリタス カナダ，インコーポレイテッド
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/225—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier working in avalanche mode, e.g. avalanche photodiodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
JP2014519066A 2011-07-08 2012-07-06 光子計数ｕｖ−ａｐｄ Active JP5837689B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US13/179,378 US8368159B2 (en) 2011-07-08 2011-07-08 Photon counting UV-APD
US13/179,378 2011-07-08
PCT/US2012/045744 WO2013009615A1 (en) 2011-07-08 2012-07-06 Photon counting uv-apd

Publications (3)

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JP2014518458A JP2014518458A (ja) 2014-07-28
JP2014518458A5 JP2014518458A5 (enExample) 2015-04-09
JP5837689B2 true JP5837689B2 (ja) 2015-12-24

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JP2014519066A Active JP5837689B2 (ja) 2011-07-08 2012-07-06 光子計数ｕｖ−ａｐｄ

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US (1) US8368159B2 (enExample)
JP (1) JP5837689B2 (enExample)
WO (1) WO2013009615A1 (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
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US10347670B2 (en) 2017-03-15 2019-07-09 Kabushiki Kaisha Toshiba Photodetection element
KR102566061B1 (ko) * 2017-03-22 2023-08-11 소니 세미컨덕터 솔루션즈 가부시키가이샤 촬상 장치 및 신호 처리 장치

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US10700225B2 (en) 2013-05-22 2020-06-30 W&Wsens Devices, Inc. Microstructure enhanced absorption photosensitive devices
WO2014190189A2 (en) 2013-05-22 2014-11-27 Shih-Yuan Wang Microstructure enhanced absorption photosensitive devices
US10468543B2 (en) 2013-05-22 2019-11-05 W&Wsens Devices, Inc. Microstructure enhanced absorption photosensitive devices
CN107078145B (zh) * 2014-11-18 2019-05-07 王士原 经微结构增强吸收的光敏器件
CN107615495B (zh) * 2015-05-28 2019-05-03 日本电信电话株式会社 光接收元件和光学集成电路
JP6994882B2 (ja) * 2017-09-25 2022-01-14 エイブリック株式会社 紫外線受光素子及び紫外線受光素子の製造方法
CN109346552B (zh) * 2018-10-22 2020-06-19 中国科学院半导体研究所 基于弧形扩散区的雪崩光电探测器及其制作方法
JP7008653B2 (ja) * 2019-02-07 2022-01-25 株式会社東芝 分子検出装置
RU2732694C1 (ru) * 2019-03-12 2020-09-21 Общество С Ограниченной Ответственностью "Детектор Фотонный Аналоговый" (Ооо "Дефан") Лавинный фотодетектор (варианты) и способ его изготовления (варианты)
RU2732695C1 (ru) * 2019-03-12 2020-09-21 Общество С Ограниченной Ответственностью "Детектор Фотонный Аналоговый" (Ооо "Дефан") Лавинный фотодетектор (варианты) и способ его изготовления (варианты)
US11372119B2 (en) 2019-04-02 2022-06-28 Massachusetts Institute Of Technology Rapid prototyping of single-photon-sensitive silicon avalanche photodiodes
JP2020170812A (ja) * 2019-04-05 2020-10-15 ソニーセミコンダクタソリューションズ株式会社 アバランシェフォトダイオードセンサおよびセンサ装置
CN110690314B (zh) * 2019-09-05 2023-06-27 中国电子科技集团公司第十三研究所 吸收层与倍增层为分离结构的紫外探测器及其制备方法
JP2020073889A (ja) * 2019-12-04 2020-05-14 株式会社東芝 光検出器およびこれを用いたライダー装置
US11322636B2 (en) * 2020-02-24 2022-05-03 Globalfoundries U.S. Inc. Photodiode
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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10347670B2 (en) 2017-03-15 2019-07-09 Kabushiki Kaisha Toshiba Photodetection element
KR102566061B1 (ko) * 2017-03-22 2023-08-11 소니 세미컨덕터 솔루션즈 가부시키가이샤 촬상 장치 및 신호 처리 장치
US12136641B2 (en) 2017-03-22 2024-11-05 Sony Semiconductor Solutions Corporation Imaging device and signal processing device

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US8368159B2 (en) 2013-02-05
JP2014518458A (ja) 2014-07-28
US20130009265A1 (en) 2013-01-10
WO2013009615A1 (en) 2013-01-17

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