JP5827045B2 - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法 Download PDF

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Publication number
JP5827045B2
JP5827045B2 JP2011144698A JP2011144698A JP5827045B2 JP 5827045 B2 JP5827045 B2 JP 5827045B2 JP 2011144698 A JP2011144698 A JP 2011144698A JP 2011144698 A JP2011144698 A JP 2011144698A JP 5827045 B2 JP5827045 B2 JP 5827045B2
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Japan
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oxide semiconductor
film
layer
moisture
containing film
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JP2011144698A
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Japanese (ja)
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JP2013012603A (ja
JP2013012603A5 (enExample
Inventor
直也 岡田
直也 岡田
剛史 野田
剛史 野田
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Japan Display Inc
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Japan Display Inc
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Publication date
Application filed by Japan Display Inc filed Critical Japan Display Inc
Priority to JP2011144698A priority Critical patent/JP5827045B2/ja
Priority to US13/533,304 priority patent/US20130001558A1/en
Publication of JP2013012603A publication Critical patent/JP2013012603A/ja
Publication of JP2013012603A5 publication Critical patent/JP2013012603A5/ja
Priority to US14/734,569 priority patent/US20150279699A1/en
Application granted granted Critical
Publication of JP5827045B2 publication Critical patent/JP5827045B2/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/18, H10D48/04 and H10D48/07, with or without impurities, e.g. doping materials
    • H01L21/46—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428
    • H01L21/461—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/4763—Deposition of non-insulating, e.g. conductive -, resistive -, layers on insulating layers; After-treatment of these layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/18, H10D48/04 and H10D48/07, with or without impurities, e.g. doping materials
    • H01L21/46—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428
    • H01L21/477—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Thin Film Transistor (AREA)
JP2011144698A 2011-06-29 2011-06-29 半導体装置の製造方法 Active JP5827045B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2011144698A JP5827045B2 (ja) 2011-06-29 2011-06-29 半導体装置の製造方法
US13/533,304 US20130001558A1 (en) 2011-06-29 2012-06-26 Semiconductor device and manufacturing method of semiconductor device
US14/734,569 US20150279699A1 (en) 2011-06-29 2015-06-09 Semiconductor device and manufacturing method of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011144698A JP5827045B2 (ja) 2011-06-29 2011-06-29 半導体装置の製造方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2015203965A Division JP6097808B2 (ja) 2015-10-15 2015-10-15 半導体装置及び半導体装置の製造方法

Publications (3)

Publication Number Publication Date
JP2013012603A JP2013012603A (ja) 2013-01-17
JP2013012603A5 JP2013012603A5 (enExample) 2014-02-13
JP5827045B2 true JP5827045B2 (ja) 2015-12-02

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Family Applications (1)

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JP2011144698A Active JP5827045B2 (ja) 2011-06-29 2011-06-29 半導体装置の製造方法

Country Status (2)

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US (2) US20130001558A1 (enExample)
JP (1) JP5827045B2 (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6370048B2 (ja) * 2013-01-21 2018-08-08 株式会社半導体エネルギー研究所 半導体装置の作製方法
CN105190902B (zh) * 2013-05-09 2019-01-29 株式会社半导体能源研究所 半导体装置及其制造方法
JP2015037164A (ja) * 2013-08-16 2015-02-23 国立大学法人東京工業大学 半導体膜、薄膜トランジスタ、およびこれらの製造方法
CN105280717B (zh) * 2015-09-23 2018-04-20 京东方科技集团股份有限公司 Tft及其制作方法、阵列基板及显示装置
JP2018195632A (ja) 2017-05-15 2018-12-06 株式会社ジャパンディスプレイ 半導体装置および表示装置
WO2020245925A1 (ja) * 2019-06-04 2020-12-10 堺ディスプレイプロダクト株式会社 薄膜トランジスタおよびその製造方法、ならびに表示装置

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5215589B2 (ja) * 2007-05-11 2013-06-19 キヤノン株式会社 絶縁ゲート型トランジスタ及び表示装置
JP5416460B2 (ja) * 2008-04-18 2014-02-12 株式会社半導体エネルギー研究所 薄膜トランジスタおよび薄膜トランジスタの作製方法
JP5434000B2 (ja) * 2008-07-17 2014-03-05 株式会社リコー 電界効果型トランジスタ及びその製造方法
JP5627071B2 (ja) * 2008-09-01 2014-11-19 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP4623179B2 (ja) * 2008-09-18 2011-02-02 ソニー株式会社 薄膜トランジスタおよびその製造方法
JP5564331B2 (ja) * 2009-05-29 2014-07-30 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP5528734B2 (ja) * 2009-07-09 2014-06-25 富士フイルム株式会社 電子素子及びその製造方法、表示装置、並びにセンサー
KR102362616B1 (ko) * 2009-07-31 2022-02-15 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치
CN102549757A (zh) * 2009-09-30 2012-07-04 佳能株式会社 薄膜晶体管
CN102668096B (zh) * 2009-10-30 2015-04-29 株式会社半导体能源研究所 半导体装置及其制造方法
KR101652790B1 (ko) * 2009-11-09 2016-08-31 삼성전자주식회사 트랜지스터와 그 제조방법 및 트랜지스터를 포함하는 전자소자
JP2012238763A (ja) * 2011-05-12 2012-12-06 Fujitsu Ltd 半導体装置及び半導体装置の製造方法

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US20150279699A1 (en) 2015-10-01
JP2013012603A (ja) 2013-01-17
US20130001558A1 (en) 2013-01-03

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