JP5812487B2 - 太陽電池の製造方法 - Google Patents
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type
- H01L31/0749—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type including a AIBIIICVI compound, e.g. CdS/CulnSe2 [CIS] heterojunction solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/541—CuInSe2 material PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Description
図1は、本発明の製造方法によって製造される太陽電池の一実施形態を示す断面図である。太陽電池1は、例えば、ガラス基板2上に、下部電極3、Cu、In、Ga、およびSeを含有する光吸収層4、バッファー層5、透明導電層6、および上部電極7が少なくともこの順に形成されたものである。
3cm×3cmの正方形、厚さ1.1mmに加工したガラス基板(ソーダライムガラス板)をアセトン溶液の入ったビーカーに浸し、常温で超音波洗浄器にて5分間基板洗浄を行った。同様に、エタノール溶液でも基板洗浄を行い、さらに新しいアセトン溶液とエタノール溶液の各溶液にて同様の基板表面の洗浄を行った。その後、窒素ガンにて溶液を吹き飛ばし乾燥させた。
光吸収層の成膜において、第5の工程(2度目のGa−Se蒸着工程)のGaおよびSeの蒸着時間を10秒短縮し、その代わりにInおよびSeの蒸着を10秒間行い(第6の工程)、その後Se雰囲気中(Seの圧力3×10−3〜1×10−2Pa)で基板温度を600℃にして5分間保持した(第7の工程)こと以外は、実施例1と同様にして太陽電池を作製した。
光吸収層の成膜において、工程全体を通してSeの圧力を約2倍(1×10−2〜1.6×10−2Pa)としたこと以外は実施例1と同様にして太陽電池を作製した。
光吸収層の成膜において、第5の工程(2度目のGa−Se蒸着工程)のGaおよびSeの蒸着時間を10秒短縮し、その代わりにInおよびSeの蒸着を10秒間行うとともに(第6の工程)、工程全体を通してSeの圧力を2倍(1×10−2〜1.6×10−2Pa)としたこと以外は実施例1と同様にして太陽電池を作製した。
光吸収層の成膜において、さらにSe雰囲気中(Seの圧力3×10−3〜1×10−2Pa)で基板温度を600℃で5分間保持した(第7の工程)こと以外は、実施例1と同様にして太陽電池を作製した。
光吸収層の成膜を以下に示すような従来の3段階法により行ったこと以外は、実施例1と同様にしてCIGS太陽電池を作製した。
光吸収層の成膜において、2段階目、3段階目の基板温度を600℃としたこと以外は、比較例1と同様にして太陽電池を作製した。
光吸収層の成膜において、2段階目、3段階目の基板温度を650℃としたこと以外は、比較例1と同様にして太陽電池を作製した。
光吸収層の成膜において、CuおよびSeの蒸着(第3の工程)以降の工程において基板温度を520℃としたこと以外は、実施例1と同様にして太陽電池を作製した。
外部の光が内部に侵入することを遮断できる一辺約30cmの容器を準備し、その容器内を、容器内部における光の反射を抑えるために内部を黒く塗装し、上記容器内に太陽電池を設置した。なお、太陽電池には、あらかじめInGa溶剤(オーミック接触のため)を塗布したモリブデン層にプラス端子、8個のセル表面のAl電極にマイナス端子を、それぞれ電圧/電流発生器(装置名:R6243、ADVANTEST社製)に接続した。
発電効率[%]=Voc[V]×Jsc[mA/cm2]×FF[無次元]×100
/試験に用いる光源の照度[W/cm2] ……(1)
二次イオン質量分析法(SIMS)により、光吸収層の上部側から厚さ方向に分布測定を行った。測定装置は、アルバック・ファイ社製「ADEPT1010」を使用し、測定条件は、一次イオン:O2 +、加速電圧:5kV、ビーム電流:700nAとした。
Claims (3)
- ガラス基板上に、
下部電極、
Cu、In、Ga、およびSeを含有する光吸収層、
バッファー層、
透明導電層、
および上部電極
が少なくともこの順に形成された太陽電池の製造方法であって、
前記光吸収層は、
基板温度を300〜500℃としてSeおよびGaを蒸着させる第1の工程と、
基板温度を300〜500℃としてSeおよびInを蒸着させる第2の工程と、
基板温度を前記第2の工程における温度から昇温して550〜630℃としてSeおよびCuを蒸着させる第3の工程と、
基板温度を550〜630℃としてSeおよびInを蒸着させる第4の工程と、
基板温度を550〜630℃としてSeおよびGaを蒸着させる第5の工程と
を少なくともこの順に前記下部電極上に行って形成することを特徴とする太陽電池の製造方法。 - 前記第5の工程後、基板温度を550〜630℃としてSeおよびInを蒸着する第6の工程を行う請求項1記載の太陽電池の製造方法。
- 前記第5の工程後、または前記第6の工程を行う場合には前記第6の工程後、Se雰囲気中で550〜630℃の熱処理を行う第7の工程を行う請求項1または2記載の太陽電池の製造方法。
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JP2011221909A JP5812487B2 (ja) | 2011-10-06 | 2011-10-06 | 太陽電池の製造方法 |
TW101137023A TW201320375A (zh) | 2011-10-06 | 2012-10-05 | 太陽能電池之製造方法及太陽能電池 |
KR1020120110796A KR20130037654A (ko) | 2011-10-06 | 2012-10-05 | 태양 전지의 제조 방법 및 태양 전지 |
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JP5812487B2 true JP5812487B2 (ja) | 2015-11-11 |
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KR (1) | KR20130037654A (ja) |
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JP6103525B2 (ja) * | 2013-02-12 | 2017-03-29 | 日東電工株式会社 | Cigs膜およびそれを用いたcigs太陽電池 |
JP2014152085A (ja) * | 2013-02-12 | 2014-08-25 | Nitto Denko Corp | Cigs膜の製法およびその製法を用いるcigs太陽電池の製法 |
JP5851434B2 (ja) * | 2013-02-12 | 2016-02-03 | 日東電工株式会社 | Cigs膜の製法およびその製法を用いたcigs太陽電池の製法 |
US9385260B2 (en) | 2013-07-10 | 2016-07-05 | Tsmc Solar Ltd. | Apparatus and methods for forming thin film solar cell materials |
JP2015211195A (ja) * | 2014-04-30 | 2015-11-24 | 日東電工株式会社 | Cigs半導体層およびその製造方法ならびにそれを用いたcigs光電変換装置 |
CN111455320A (zh) * | 2019-01-18 | 2020-07-28 | 北京铂阳顶荣光伏科技有限公司 | 薄膜太阳能电池吸收层的制备方法及镀膜设备 |
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JP3249408B2 (ja) * | 1996-10-25 | 2002-01-21 | 昭和シェル石油株式会社 | 薄膜太陽電池の薄膜光吸収層の製造方法及び製造装置 |
JP2005072088A (ja) * | 2003-08-20 | 2005-03-17 | Matsushita Electric Ind Co Ltd | 太陽電池およびその製造方法 |
JP2011100976A (ja) * | 2009-10-09 | 2011-05-19 | Fujifilm Corp | 光電変換素子とその製造方法、及び太陽電池 |
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