JP5807015B2 - 発光素子の製造方法 - Google Patents
発光素子の製造方法 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 claims description 17
- 238000005530 etching Methods 0.000 claims description 16
- 239000013078 crystal Substances 0.000 claims description 10
- 239000000203 mixture Substances 0.000 claims description 4
- 241000884009 Hyporhamphus unifasciatus Species 0.000 claims description 2
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- 239000010980 sapphire Substances 0.000 description 9
- 238000006243 chemical reaction Methods 0.000 description 8
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- 238000003486 chemical etching Methods 0.000 description 2
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- 230000017525 heat dissipation Effects 0.000 description 2
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- 230000003595 spectral effect Effects 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 230000003698 anagen phase Effects 0.000 description 1
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- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
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- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Led Devices (AREA)
- Drying Of Semiconductors (AREA)
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Description
Claims (10)
- 基板上に、複数の転位を含むエピタキシャルn型半導体層を成長させるステップと、
前記n型半導体層上に複数の副層を含む活性層を成長させる活性層形成ステップであって、前記複数の副層を構成する各副層のそれぞれが、前記転位の位置にピットを形成させるようにする成長条件下において、前記ピット内における厚さが、前記ピットの外側の領域における厚さより実質的に薄くなるように成長させる第1ステップと、その後に前記ピット内に形成された部分をエッチングして前記ピット内に当該副層の側面を露出させる第2ステップと、により形成され、前記第1ステップと前記第2ステップとを繰り返すことで前記複数の副層を形成する、活性層形成ステップと、
前記活性層の上にエピタキシャルp型半導体層を成長させ、前記p型半導体層が前記ピット内に延在し、前記p型半導体層が前記複数の副層の各側面及び前記活性層の上面と接触するように成長させるステップと、
前記p型半導体層と前記n型半導体層との間に電位差を印加する接点を形成するステップと、
を含む、発光素子の製造方法。 - 前記副層の成長条件は、前記ピット内での結晶成長速度が、前記ピットの外側の領域での結晶成長速度よりも、実質的に低くなる条件である、請求項1に記載の発光素子の製造方法。
- 前記副層の成長条件は、堆積する材料の表面移動度を抑制する条件である、請求項1または2に記載の発光素子の製造方法。
- 前記各副層は、InGaN及びGaN層を含み、
前記成長条件は、前記GaN層が前記ピット内での成長速度が実質的に低くなる条件である、請求項1〜3のいずれか1つに記載の発光素子の製造方法。 - 前記成長条件は、前記GaN層のGa/N比、成長速度、および成長温度の組み合わせである、請求項4に記載の発光素子の製造方法。
- 前記n型半導体層は、前記基板の格子定数と相違する格子定数を有し、該相違により転位が発生し、前記ピットは、前記転位を有する位置で形成される、請求項1〜5のいずれか1つに記載の発光素子の製造方法。
- 前記副層のうち前記ピット内に形成された部分をエッチングして前記副層の側面を露出させる第2ステップは、前記発光素子が製造されているエピタキシャル成長チャンバー内のガス組成を、前記ピット内に形成された部分を、前記ピットの外側の領域に形成された部分よりも高速でエッチングする雰囲気に変化させることを含む、請求項1〜6のいずれか1つに記載の発光素子の製造方法。
- 前記副層のうち前記ピット内に形成された部分をエッチングして前記副層の側面を露出させる第2ステップは、前記発光素子が製造されているエピタキシャル成長チャンバー内にH2を導入して、そのガス組成をH2を含む雰囲気に変化させることを含む、請求項1〜7のいずれか1つに記載の発光素子の製造方法。
- 前記n型半導体層は、107cm−2〜1010cm−2の間の転位の密度をもたらす条件下で成長する、請求項1〜8のいずれか1つに記載の発光素子の製造方法。
- 前記複数の副層は、前記ピット以外の表面からその副層に入る第1の正孔電流と、前記ピットを介してその副層の側面から入る第2の正孔電流とによって特徴付けられる、請求項1〜9のいずれか1つに記載の発光素子の製造方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/626,474 US8525221B2 (en) | 2009-11-25 | 2009-11-25 | LED with improved injection efficiency |
US12/626,474 | 2009-11-25 | ||
PCT/US2010/051205 WO2011066038A1 (en) | 2009-11-25 | 2010-10-01 | Led with improved injection efficiency |
Publications (3)
Publication Number | Publication Date |
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JP2013512567A JP2013512567A (ja) | 2013-04-11 |
JP2013512567A5 JP2013512567A5 (ja) | 2013-11-21 |
JP5807015B2 true JP5807015B2 (ja) | 2015-11-10 |
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JP2012541078A Active JP5807015B2 (ja) | 2009-11-25 | 2010-10-01 | 発光素子の製造方法 |
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US (3) | US8525221B2 (ja) |
EP (1) | EP2504869B1 (ja) |
JP (1) | JP5807015B2 (ja) |
KR (1) | KR20120102040A (ja) |
CN (1) | CN102484179B (ja) |
HK (1) | HK1167741A1 (ja) |
TW (1) | TWI518946B (ja) |
WO (1) | WO2011066038A1 (ja) |
Families Citing this family (23)
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US9287452B2 (en) * | 2010-08-09 | 2016-03-15 | Micron Technology, Inc. | Solid state lighting devices with dielectric insulation and methods of manufacturing |
US8853668B2 (en) * | 2011-09-29 | 2014-10-07 | Kabushiki Kaisha Toshiba | Light emitting regions for use with light emitting devices |
DE102012217640B4 (de) * | 2012-09-27 | 2020-02-20 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauelement und Verfahren zu seiner Herstellung |
DE102013103602A1 (de) * | 2013-04-10 | 2014-10-16 | Osram Opto Semiconductors Gmbh | Optoelektronischer Halbleiterchip und Verfahren zu seiner Herstellung |
KR20150025264A (ko) | 2013-08-28 | 2015-03-10 | 삼성전자주식회사 | 정공주입층을 구비하는 반도체 발광 소자 및 그 제조 방법 |
FR3010228B1 (fr) | 2013-08-30 | 2016-12-30 | St Microelectronics Tours Sas | Procede de traitement d'une couche de nitrure de gallium comportant des dislocations |
KR102142709B1 (ko) | 2013-12-05 | 2020-08-07 | 엘지이노텍 주식회사 | 발광 소자 및 이를 구비한 조명 장치 |
JP2015177025A (ja) * | 2014-03-14 | 2015-10-05 | 株式会社東芝 | 光半導体素子 |
DE102015104665A1 (de) | 2015-03-26 | 2016-09-29 | Osram Opto Semiconductors Gmbh | Optoelektronischer Halbleiterkörper und Verfahren zur Herstellung eines optoelektronischen Halbleiterkörpers |
DE102015104700A1 (de) | 2015-03-27 | 2016-09-29 | Osram Opto Semiconductors Gmbh | Optoelektronischer Halbleiterchip |
KR102378823B1 (ko) * | 2015-09-07 | 2022-03-28 | 삼성전자주식회사 | 반도체 기판 및 이를 이용한 반도체 발광소자의 제조 방법 |
CN105355741B (zh) * | 2015-11-02 | 2017-09-29 | 厦门市三安光电科技有限公司 | 一种led外延结构及制作方法 |
DE102015120896A1 (de) * | 2015-12-02 | 2017-06-08 | Osram Opto Semiconductors Gmbh | Elektronisches Bauteil sowie Verfahren zur Herstellung eines elektronischen Bauteils |
CN105489725B (zh) * | 2016-01-25 | 2018-10-16 | 厦门市三安光电科技有限公司 | 一种led芯片结构及制作方法 |
DE102016103346A1 (de) * | 2016-02-25 | 2017-08-31 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung eines strahlungsemittierenden Halbleiterchips und strahlungsemittierender Halbleiterchip |
CN105762241A (zh) * | 2016-04-28 | 2016-07-13 | 厦门乾照光电股份有限公司 | 一种增强注入型的发光二极管的外延结构制作方法 |
DE102016208717B4 (de) * | 2016-05-20 | 2022-03-24 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Bauelement mit erhöhter Effizienz und Verfahren zur Herstellung eines Bauelements |
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JP6405430B1 (ja) | 2017-09-15 | 2018-10-17 | 日機装株式会社 | 窒化物半導体発光素子及び窒化物半導体発光素子の製造方法 |
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EP2504869A1 (en) | 2012-10-03 |
US8684749B2 (en) | 2014-04-01 |
US9012953B2 (en) | 2015-04-21 |
CN102484179B (zh) | 2015-10-07 |
WO2011066038A1 (en) | 2011-06-03 |
KR20120102040A (ko) | 2012-09-17 |
EP2504869A4 (en) | 2014-11-26 |
TWI518946B (zh) | 2016-01-21 |
US20110121357A1 (en) | 2011-05-26 |
CN102484179A (zh) | 2012-05-30 |
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US8525221B2 (en) | 2013-09-03 |
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