CN102484179B - 具有改进的注入效率的led - Google Patents
具有改进的注入效率的led Download PDFInfo
- Publication number
- CN102484179B CN102484179B CN201080039088.8A CN201080039088A CN102484179B CN 102484179 B CN102484179 B CN 102484179B CN 201080039088 A CN201080039088 A CN 201080039088A CN 102484179 B CN102484179 B CN 102484179B
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- type semiconductor
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- 230000006872 improvement Effects 0.000 title description 3
- 238000002347 injection Methods 0.000 title description 3
- 239000007924 injection Substances 0.000 title description 3
- 239000004065 semiconductor Substances 0.000 claims abstract description 84
- 239000000463 material Substances 0.000 claims abstract description 39
- 238000000034 method Methods 0.000 claims abstract description 21
- 238000005530 etching Methods 0.000 claims abstract description 17
- 238000004519 manufacturing process Methods 0.000 claims abstract description 7
- 230000012010 growth Effects 0.000 claims description 53
- 239000000758 substrate Substances 0.000 claims description 26
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 24
- 239000013078 crystal Substances 0.000 claims description 12
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 8
- 230000004888 barrier function Effects 0.000 claims description 8
- 230000008021 deposition Effects 0.000 claims description 6
- 239000001257 hydrogen Substances 0.000 claims description 5
- 229910052739 hydrogen Inorganic materials 0.000 claims description 5
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 4
- 229910021529 ammonia Inorganic materials 0.000 claims description 4
- 238000003486 chemical etching Methods 0.000 claims description 3
- 239000007789 gas Substances 0.000 claims description 3
- 238000000151 deposition Methods 0.000 abstract description 8
- 239000011248 coating agent Substances 0.000 description 24
- 238000000576 coating method Methods 0.000 description 24
- 229910002601 GaN Inorganic materials 0.000 description 19
- 229910052594 sapphire Inorganic materials 0.000 description 9
- 239000010980 sapphire Substances 0.000 description 9
- 238000006243 chemical reaction Methods 0.000 description 7
- 230000008569 process Effects 0.000 description 6
- 230000006798 recombination Effects 0.000 description 4
- 238000005215 recombination Methods 0.000 description 4
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 230000007480 spreading Effects 0.000 description 3
- 238000003892 spreading Methods 0.000 description 3
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 2
- 101000911390 Homo sapiens Coagulation factor VIII Proteins 0.000 description 2
- 230000003321 amplification Effects 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 102000057593 human F8 Human genes 0.000 description 2
- 238000003199 nucleic acid amplification method Methods 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 229940047431 recombinate Drugs 0.000 description 2
- 230000001105 regulatory effect Effects 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 229910017083 AlN Inorganic materials 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 230000003698 anagen phase Effects 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- NWAIGJYBQQYSPW-UHFFFAOYSA-N azanylidyneindigane Chemical compound [In]#N NWAIGJYBQQYSPW-UHFFFAOYSA-N 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 230000001447 compensatory effect Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 230000007773 growth pattern Effects 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- SBEQWOXEGHQIMW-UHFFFAOYSA-N silicon Chemical compound [Si].[Si] SBEQWOXEGHQIMW-UHFFFAOYSA-N 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/02428—Structure
- H01L21/0243—Surface structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
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- H01L21/02458—Nitrides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02494—Structure
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02494—Structure
- H01L21/02496—Layer structure
- H01L21/02505—Layer structure consisting of more than two layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/0254—Nitrides
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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- H01L21/02656—Special treatments
- H01L21/02658—Pretreatments
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/0004—Devices characterised by their operation
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/025—Physical imperfections, e.g. particular concentration or distribution of impurities
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/24—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Led Devices (AREA)
- Drying Of Semiconductors (AREA)
- Weting (AREA)
Abstract
Description
Claims (15)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/626,474 | 2009-11-25 | ||
US12/626,474 US8525221B2 (en) | 2009-11-25 | 2009-11-25 | LED with improved injection efficiency |
PCT/US2010/051205 WO2011066038A1 (en) | 2009-11-25 | 2010-10-01 | Led with improved injection efficiency |
Publications (2)
Publication Number | Publication Date |
---|---|
CN102484179A CN102484179A (zh) | 2012-05-30 |
CN102484179B true CN102484179B (zh) | 2015-10-07 |
Family
ID=44061455
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201080039088.8A Active CN102484179B (zh) | 2009-11-25 | 2010-10-01 | 具有改进的注入效率的led |
Country Status (8)
Country | Link |
---|---|
US (3) | US8525221B2 (zh) |
EP (1) | EP2504869B1 (zh) |
JP (1) | JP5807015B2 (zh) |
KR (1) | KR20120102040A (zh) |
CN (1) | CN102484179B (zh) |
HK (1) | HK1167741A1 (zh) |
TW (1) | TWI518946B (zh) |
WO (1) | WO2011066038A1 (zh) |
Families Citing this family (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9287452B2 (en) * | 2010-08-09 | 2016-03-15 | Micron Technology, Inc. | Solid state lighting devices with dielectric insulation and methods of manufacturing |
US8853668B2 (en) * | 2011-09-29 | 2014-10-07 | Kabushiki Kaisha Toshiba | Light emitting regions for use with light emitting devices |
DE102012217640B4 (de) * | 2012-09-27 | 2020-02-20 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauelement und Verfahren zu seiner Herstellung |
DE102013103602A1 (de) * | 2013-04-10 | 2014-10-16 | Osram Opto Semiconductors Gmbh | Optoelektronischer Halbleiterchip und Verfahren zu seiner Herstellung |
KR20150025264A (ko) * | 2013-08-28 | 2015-03-10 | 삼성전자주식회사 | 정공주입층을 구비하는 반도체 발광 소자 및 그 제조 방법 |
FR3010228B1 (fr) | 2013-08-30 | 2016-12-30 | St Microelectronics Tours Sas | Procede de traitement d'une couche de nitrure de gallium comportant des dislocations |
KR102142709B1 (ko) * | 2013-12-05 | 2020-08-07 | 엘지이노텍 주식회사 | 발광 소자 및 이를 구비한 조명 장치 |
JP2015177025A (ja) * | 2014-03-14 | 2015-10-05 | 株式会社東芝 | 光半導体素子 |
DE102015104665A1 (de) | 2015-03-26 | 2016-09-29 | Osram Opto Semiconductors Gmbh | Optoelektronischer Halbleiterkörper und Verfahren zur Herstellung eines optoelektronischen Halbleiterkörpers |
DE102015104700A1 (de) | 2015-03-27 | 2016-09-29 | Osram Opto Semiconductors Gmbh | Optoelektronischer Halbleiterchip |
KR102378823B1 (ko) * | 2015-09-07 | 2022-03-28 | 삼성전자주식회사 | 반도체 기판 및 이를 이용한 반도체 발광소자의 제조 방법 |
CN105355741B (zh) * | 2015-11-02 | 2017-09-29 | 厦门市三安光电科技有限公司 | 一种led外延结构及制作方法 |
DE102015120896A1 (de) * | 2015-12-02 | 2017-06-08 | Osram Opto Semiconductors Gmbh | Elektronisches Bauteil sowie Verfahren zur Herstellung eines elektronischen Bauteils |
CN105489725B (zh) * | 2016-01-25 | 2018-10-16 | 厦门市三安光电科技有限公司 | 一种led芯片结构及制作方法 |
DE102016103346A1 (de) * | 2016-02-25 | 2017-08-31 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung eines strahlungsemittierenden Halbleiterchips und strahlungsemittierender Halbleiterchip |
CN105762241A (zh) * | 2016-04-28 | 2016-07-13 | 厦门乾照光电股份有限公司 | 一种增强注入型的发光二极管的外延结构制作方法 |
DE102016208717B4 (de) * | 2016-05-20 | 2022-03-24 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Bauelement mit erhöhter Effizienz und Verfahren zur Herstellung eines Bauelements |
JP6405430B1 (ja) | 2017-09-15 | 2018-10-17 | 日機装株式会社 | 窒化物半導体発光素子及び窒化物半導体発光素子の製造方法 |
JP6905498B2 (ja) * | 2017-09-15 | 2021-07-21 | 日機装株式会社 | 窒化物半導体発光素子及び窒化物半導体発光素子の製造方法 |
CN112397618A (zh) * | 2020-11-27 | 2021-02-23 | 安徽中医药大学 | 一种发光二极管的外延结构及其制备方法 |
DE102021129843A1 (de) | 2021-11-16 | 2023-05-17 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Verfahren zur herstellung einer vielzahl strahlungsemittierender halbleiterchips und strahlungsemittierender halbleiterchip |
CN114300590B (zh) * | 2021-12-28 | 2024-02-23 | 淮安澳洋顺昌光电技术有限公司 | 一种发光二极管及其制备方法 |
EP4345922A1 (en) * | 2022-09-30 | 2024-04-03 | ALLOS Semiconductors GmbH | Gan-on-si epiwafer comprising a strain-decoupling sub-stack |
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US20110121357A1 (en) | 2011-05-26 |
TW201143139A (en) | 2011-12-01 |
US20130316483A1 (en) | 2013-11-28 |
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WO2011066038A1 (en) | 2011-06-03 |
US8684749B2 (en) | 2014-04-01 |
US9012953B2 (en) | 2015-04-21 |
CN102484179A (zh) | 2012-05-30 |
JP5807015B2 (ja) | 2015-11-10 |
EP2504869A4 (en) | 2014-11-26 |
US8525221B2 (en) | 2013-09-03 |
EP2504869B1 (en) | 2020-02-26 |
TWI518946B (zh) | 2016-01-21 |
HK1167741A1 (zh) | 2012-12-07 |
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US20140151728A1 (en) | 2014-06-05 |
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