JP2006191071A - 半導体発光素子及びその製造方法 - Google Patents
半導体発光素子及びその製造方法 Download PDFInfo
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- JP2006191071A JP2006191071A JP2005376315A JP2005376315A JP2006191071A JP 2006191071 A JP2006191071 A JP 2006191071A JP 2005376315 A JP2005376315 A JP 2005376315A JP 2005376315 A JP2005376315 A JP 2005376315A JP 2006191071 A JP2006191071 A JP 2006191071A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 143
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 25
- 239000000758 substrate Substances 0.000 claims abstract description 10
- 238000011065 in-situ storage Methods 0.000 claims abstract description 5
- 239000000463 material Substances 0.000 claims description 28
- 238000000034 method Methods 0.000 claims description 22
- 238000000151 deposition Methods 0.000 claims description 4
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 claims 1
- 239000000126 substance Substances 0.000 abstract description 6
- 238000001704 evaporation Methods 0.000 abstract 2
- 238000000605 extraction Methods 0.000 description 14
- 150000004767 nitrides Chemical class 0.000 description 12
- 238000010586 diagram Methods 0.000 description 7
- AQRLNPVMDITEJU-UHFFFAOYSA-N triethylsilane Chemical compound CC[SiH](CC)CC AQRLNPVMDITEJU-UHFFFAOYSA-N 0.000 description 4
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 3
- 238000005401 electroluminescence Methods 0.000 description 3
- 229910000077 silane Inorganic materials 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000000407 epitaxy Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000004020 luminiscence type Methods 0.000 description 2
- 238000001451 molecular beam epitaxy Methods 0.000 description 2
- -1 nitride compound Chemical class 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000005424 photoluminescence Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- HIAZFYQNGXRLTF-UHFFFAOYSA-N tributylsilane Chemical compound CCCC[SiH](CCCC)CCCC HIAZFYQNGXRLTF-UHFFFAOYSA-N 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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- H—ELECTRICITY
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
-
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02455—Group 13/15 materials
- H01L21/02458—Nitrides
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02494—Structure
- H01L21/02496—Layer structure
- H01L21/02505—Layer structure consisting of more than two layers
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/0254—Nitrides
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
- H01L21/0332—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their composition, e.g. multilayer masks, materials
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/318—Inorganic layers composed of nitrides
- H01L21/3185—Inorganic layers composed of nitrides of siliconnitrides
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- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
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- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Materials Engineering (AREA)
- Led Devices (AREA)
- Formation Of Insulating Films (AREA)
Abstract
【解決手段】(イ)基板上に第1半導体層(31)、活性層(32)、及び第2半導体層(33)を順次積層して形成する工程と、(ロ)第2半導体層(33)の表面の一部領域にインサイチュでマスク層(34)を蒸着する工程と、(ハ)第2半導体層(33)及びマスク層(34)上に半導体物質を蒸着し、第2半導体層(33)上に凹凸構造の第3半導体層(35)を選択的に成長させる工程と、を含む。
【選択図】図3A
Description
12 空気層、
13a 平坦な界面、
13b 凹凸構造界面、
21 下部構造体、
22 p電極、
23 p−GaN層、
24 InGaN活性層、
25 n−GaN層、
26 n電極、
27 凹凸構造、
30 基板、
31 第1半導体層、
32 活性層、
33 第2半導体層、
34 マスク層、
35 第3半導体層、
36 透明電極、
37 第1電極、
38 第2電極。
Claims (8)
- 半導体発光素子の製造方法であって、
(イ)基板上に第1半導体層、活性層、及び第2半導体層を順次に積層して形成する工程と、
(ロ)前記第2半導体層の表面の一部領域にインサイチュでマスク層を蒸着する工程と、
(ハ)前記第2半導体層及び前記マスク層上に半導体物質を蒸着し、前記第2半導体層上に凹凸構造の第3半導体層を選択的に成長させる工程と、
を含むことを特徴とする半導体発光素子の製造方法。 - 前記(ロ)工程は、
前記第2半導体層上にSiソース及びNソースを投入して前記マスク層を形成することを特徴とする請求項1に記載の半導体発光素子の製造方法。 - 前記Siソースは、TESi、TBSi、DTBSI、SiH4、及びSi2H6からなる群から選択される少なくとも一つの物質を含むことを特徴とする請求項2に記載の発光素子の製造方法。
- 前記Nソースは、NH3であることを特徴とする請求項2に記載の半導体発光素子の製造方法。
- 前記第1半導体層はn型半導体物質で形成し、前記第2半導体層はp型半導体物質で形成することを特徴とする請求項1に記載の半導体発光素子の製造方法。
- 前記(イ)、前記(ロ)、及び前記(ハ)工程は、MOCVDまたはMBE工程により行われることを特徴とする請求項1に記載の発光素子の製造方法。
- 第1半導体層、活性層、及び第2半導体層を含む半導体発光素子であって、
前記第2半導体層の表面の一部領域に形成されたマスク層と、
前記マスク層が形成されていない前記第2半導体層の表面の領域に凹凸構造に形成される第3半導体層と、
を備えることを特徴とする半導体発光素子。 - 前記マスク層は、SixNyを含む物質で形成されることを特徴とする請求項7に記載の半導体発光素子。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2004-0114343 | 2004-12-28 | ||
KR1020040114343A KR100682873B1 (ko) | 2004-12-28 | 2004-12-28 | 반도체 발광 소자 및 그 제조 방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2006191071A true JP2006191071A (ja) | 2006-07-20 |
JP5130437B2 JP5130437B2 (ja) | 2013-01-30 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2005376315A Expired - Fee Related JP5130437B2 (ja) | 2004-12-28 | 2005-12-27 | 半導体発光素子及びその製造方法 |
Country Status (3)
Country | Link |
---|---|
US (2) | US7981775B2 (ja) |
JP (1) | JP5130437B2 (ja) |
KR (1) | KR100682873B1 (ja) |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101920184A (zh) * | 2010-08-06 | 2010-12-22 | 清华大学 | 基于氮化物发光二极管的光催化生化器件及其制备方法 |
JP2011114123A (ja) * | 2009-11-26 | 2011-06-09 | Stanley Electric Co Ltd | 光半導体装置 |
JP2011119333A (ja) * | 2009-12-01 | 2011-06-16 | Sharp Corp | 窒化物半導体発光素子 |
JP2011518432A (ja) * | 2008-04-02 | 2011-06-23 | エルジー イノテック カンパニー リミテッド | 発光素子及びその製造方法 |
JP2012169615A (ja) * | 2011-02-11 | 2012-09-06 | Sharp Corp | ナノ構造を有する発光ダイオードおよびその製造方法 |
JP2012235118A (ja) * | 2011-04-29 | 2012-11-29 | Qinghua Univ | 発光ダイオード |
JP2013048301A (ja) * | 2010-01-08 | 2013-03-07 | Taiwan Semiconductor Manufacturing Co Ltd | 光デバイス |
KR101338274B1 (ko) * | 2006-08-08 | 2013-12-09 | 엘지이노텍 주식회사 | 질화물계 발광 소자 및 그 제조방법 |
JP2015173228A (ja) * | 2014-03-12 | 2015-10-01 | 沖電気工業株式会社 | 窒化物半導体、窒化物半導体のテクスチャ構造形成方法、及び窒化物半導体のテクスチャ構造 |
Families Citing this family (5)
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KR100868361B1 (ko) * | 2007-01-03 | 2008-11-12 | 삼성전기주식회사 | 질화물계 반도체 발광소자 및 그의 제조방법 |
DE102007018307A1 (de) * | 2007-01-26 | 2008-07-31 | Osram Opto Semiconductors Gmbh | Halbleiterchip und Verfahren zur Herstellung eines Halbleiterchips |
KR101417051B1 (ko) * | 2008-01-16 | 2014-07-08 | 엘지이노텍 주식회사 | 발광다이오드 및 그 제조방법 |
JP5885602B2 (ja) * | 2012-07-04 | 2016-03-15 | アズビル株式会社 | 粒子検出装置の光源の製造装置及び粒子検出装置の光源の製造方法 |
JP6110217B2 (ja) * | 2013-06-10 | 2017-04-05 | ソニーセミコンダクタソリューションズ株式会社 | 発光素子の製造方法 |
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2004
- 2004-12-28 KR KR1020040114343A patent/KR100682873B1/ko not_active IP Right Cessation
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2005
- 2005-12-27 JP JP2005376315A patent/JP5130437B2/ja not_active Expired - Fee Related
- 2005-12-28 US US11/318,615 patent/US7981775B2/en not_active Expired - Fee Related
-
2011
- 2011-06-14 US US13/159,993 patent/US8558263B2/en not_active Expired - Fee Related
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US7981775B2 (en) | 2011-07-19 |
KR20060075539A (ko) | 2006-07-04 |
JP5130437B2 (ja) | 2013-01-30 |
KR100682873B1 (ko) | 2007-02-15 |
US20060138432A1 (en) | 2006-06-29 |
US20110248306A1 (en) | 2011-10-13 |
US8558263B2 (en) | 2013-10-15 |
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