JP5772491B2 - エピタキシャルウエーハ及びその製造方法 - Google Patents
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Description
前記エピタキシャル層の成長前に、前記撮像素子の製造において前記シリコンウエーハから前記エピタキシャル層に酸素が拡散することで、前記撮像素子の製造後において前記エピタキシャル層中の酸素濃度が4×1017atoms/cm3以上となる領域の厚さXを計算し、
前記エピタキシャル層の成長において、前記エピタキシャル層を、前記厚さXに加えて、更に前記撮像素子の製造後におけるエピタキシャル層中の酸素濃度が4×1017atoms/cm3未満となる領域の厚さが6μm以上となる厚さで成長することを特徴とするエピタキシャルウエーハの製造方法を提供する。
4×1017=([Oi]ini+[Oi]sol(T))/2−([Oi]ini−[Oi]sol(T))/2×erf[X/{2√(D(T)t)}]
(式中、[Oi]iniは前記シリコンウエーハの初期酸素濃度、Tは前記撮像素子製造中の最も高温の熱プロセスの温度、[Oi]sol(T)は前記温度Tにおける酸素の固溶度、D(T)は前記温度Tにおける酸素の拡散係数、tは前記温度Tの熱プロセスの処理時間、erfはエラー関数を示す。)
前記エピタキシャル層は、前記撮像素子の製造において前記シリコンウエーハから前記エピタキシャル層に酸素が拡散することで、前記撮像素子の製造後において前記エピタキシャル層中の酸素濃度が4×1017atoms/cm3以上となる領域と、前記撮像素子の製造後にエピタキシャル層中の酸素濃度が4×1017atoms/cm3未満となる領域とが形成されるものであり、該酸素濃度が4×1017atoms/cm3未満の領域の厚さは6μm以上となるものであることを特徴とするエピタキシャルウエーハを提供する。
C(X)=([Oi]ini+[Oi]sol(T))/2−([Oi]ini−[Oi]sol(T))/2×erf[X/{2√(D(T)t)}]
(式中、[Oi]iniはシリコンウエーハの初期酸素濃度、Tは撮像素子製造中の最も高温の熱プロセスの温度、[Oi]sol(T)は温度Tにおける酸素の固溶度、D(T)は温度Tにおける酸素の拡散係数、tは温度Tの熱プロセスの処理時間、erfはエラー関数を示す。)
磁場を印加したCZ法であるMCZ法を用いて、炭素濃度5.4×1016atoms/cm3(ASTM’74)、酸素濃度14.2×1017atoms/cm3(ASTM’79)の直径300mmのシリコン単結晶を育成し、これから切り出したウエーハを研磨してシリコンウエーハとした。
次にシリコンウエーハは全く同じシリコン単結晶(結晶炭素濃度5.4×1016atoms/cm3(ASTM’74)、酸素濃度14.2×1017atoms/cm3(ASTM’79))から切り出したものを用い、エピタキシャル層の厚さを上記の試算で求めた8.3μmより薄い6μmとしたこと以外は実施例1と全く同じエピタキシャルウエーハを作製した。このウエーハを実施例1と同じ撮像素子プロセスに投入した。
比較例と実施例1で用いたシリコンウエーハとは異なり、炭素をドープせず、酸素濃度を17×1017atoms/cm3(ASTM’79)と高くして育成したシリコン単結晶からシリコンウエーハを形成した。この酸素濃度の異なるシリコンウエーハを用いて、撮像素子製造プロセスを模した熱シミュレーションを施した後に酸素濃度分布を測定し、有効層の厚さが充分取れるかの確認実験を行う。このとき撮像素子製造プロセスの条件変更を想定して、実施例1で用いた熱シミュレーションのうち酸化膜形成熱処理を1000℃、30分と半分の時間に設定した。
Claims (7)
- CZ法によりシリコン単結晶を育成し、該シリコン単結晶からシリコンウエーハを作製し、該シリコンウエーハ上にエピタキシャル層を成長することで撮像素子製造用のエピタキシャルウエーハを製造する方法であって、
前記エピタキシャル層の成長前に、前記撮像素子の製造において前記シリコンウエーハから前記エピタキシャル層に酸素が拡散することで、前記撮像素子の製造後において前記エピタキシャル層中の酸素濃度が4×1017atoms/cm3以上となる領域の厚さXを計算し、
前記エピタキシャル層の成長において、前記エピタキシャル層を、前記厚さXに加えて、更に前記撮像素子の製造後におけるエピタキシャル層中の酸素濃度が4×1017atoms/cm3未満となる領域の厚さが6μm以上となる厚さで成長することを特徴とするエピタキシャルウエーハの製造方法。 - 前記エピタキシャル層の成長前に、前記厚さXを下記式により計算することを特徴とする請求項1に記載のエピタキシャルウエーハの製造方法。
4×1017=([Oi]ini+[Oi]sol(T))/2−([Oi]ini−[Oi]sol(T))/2×erf[X/{2√(D(T)t)}]
(式中、[Oi]iniは前記シリコンウエーハの初期酸素濃度、Tは前記撮像素子製造中の最も高温の熱プロセスの温度、[Oi]sol(T)は前記温度Tにおける酸素の固溶度、D(T)は前記温度Tにおける酸素の拡散係数、tは前記温度Tの熱プロセスの処理時間、erfはエラー関数を示す。) - 前記エピタキシャル層の成長において、前記エピタキシャル層として多層エピタキシャル層を成長することを特徴とする請求項1又は請求項2に記載のエピタキシャルウエーハの製造方法。
- 前記エピタキシャル層の成長において、前記エピタキシャル層を、前記厚さXに加えて、更に前記撮像素子の製造後にエピタキシャル層中の酸素濃度が4×1017atoms/cm3未満となる領域の厚さが6μm以上となる厚さであって、該エピタキシャル層全体の厚さが9μm以上20μm以下となる厚さで成長することを特徴とする請求項1乃至請求項3のいずれか1項に記載のエピタキシャルウエーハの製造方法。
- 前記シリコン単結晶の育成において、炭素濃度が1.3×1016−22×1016atoms/cm3(ASTM’74)となるように炭素をドープし、酸素濃度が8×1017−16×1017atoms/cm3(ASTM’79)となるように制御して前記シリコン単結晶を育成することを特徴とする請求項1乃至請求項4のいずれか1項に記載のエピタキシャルウエーハの製造方法。
- 前記シリコン単結晶の育成において、炭素をドープせず、酸素濃度が16×1017−24×1017atoms/cm3(ASTM’79)となるように制御して前記シリコン単結晶を育成することを特徴とする請求項1乃至請求項4のいずれか1項に記載のエピタキシャルウエーハの製造方法。
- CZ法により育成したシリコン単結晶から作製されたシリコンウエーハに、エピタキシャル層を成長させた撮像素子製造用のエピタキシャルウエーハであって、
前記エピタキシャル層は、前記撮像素子の製造において前記シリコンウエーハから前記エピタキシャル層に酸素が拡散することで、前記撮像素子の製造後において前記エピタキシャル層中の酸素濃度が4×1017atoms/cm3以上となる領域と、前記撮像素子の製造後にエピタキシャル層中の酸素濃度が4×1017atoms/cm3未満となる領域とが形成されるものであり、該酸素濃度が4×1017atoms/cm3未満の領域の厚さは6μm以上となるものであることを特徴とするエピタキシャルウエーハ。
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US14/349,011 US9425345B2 (en) | 2011-10-20 | 2012-10-02 | Epitaxial wafer and manufacturing method thereof |
KR1020147010474A KR102000457B1 (ko) | 2011-10-20 | 2012-10-02 | 에피택셜 웨이퍼 및 그 제조방법 |
DE112012003985.8T DE112012003985B4 (de) | 2011-10-20 | 2012-10-02 | Epitaxialwafer und Herstellungsverfahren dafür |
PCT/JP2012/006298 WO2013057887A1 (ja) | 2011-10-20 | 2012-10-02 | エピタキシャルウエーハ及びその製造方法 |
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JP6442817B2 (ja) * | 2013-08-20 | 2018-12-26 | 株式会社Sumco | エピタキシャルウェーハの製造方法およびエピタキシャルウェーハ |
DE102014106594B4 (de) * | 2014-05-09 | 2022-05-05 | Infineon Technologies Ag | Verfahren zum Herstellen eines Halbleiterbauelements |
EP3113224B1 (en) * | 2015-06-12 | 2020-07-08 | Canon Kabushiki Kaisha | Imaging apparatus, method of manufacturing the same, and camera |
JP6861471B2 (ja) * | 2015-06-12 | 2021-04-21 | キヤノン株式会社 | 撮像装置およびその製造方法ならびにカメラ |
US10026843B2 (en) | 2015-11-30 | 2018-07-17 | Taiwan Semiconductor Manufacturing Co., Ltd. | Fin structure of semiconductor device, manufacturing method thereof, and manufacturing method of active region of semiconductor device |
JP6737066B2 (ja) * | 2016-08-22 | 2020-08-05 | 株式会社Sumco | エピタキシャルシリコンウェーハの製造方法、エピタキシャルシリコンウェーハ、及び固体撮像素子の製造方法 |
JP6822375B2 (ja) * | 2017-10-19 | 2021-01-27 | 信越半導体株式会社 | シリコンエピタキシャルウエーハの製造方法 |
EP4137613A1 (de) | 2021-08-18 | 2023-02-22 | Siltronic AG | Verfahren zur herstellung einer epitaktisch beschichteten hableiterscheibe aus einkristallinem silizium |
CN118043947A (zh) | 2021-09-30 | 2024-05-14 | 信越半导体株式会社 | 外延片及其制造方法 |
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JPS6189623A (ja) * | 1984-10-09 | 1986-05-07 | Matsushita Electronics Corp | 半導体装置の製造方法 |
JPH0443646A (ja) * | 1990-06-11 | 1992-02-13 | Matsushita Electric Ind Co Ltd | 半導体装置及びその製造方法 |
US5923071A (en) * | 1992-06-12 | 1999-07-13 | Seiko Instruments Inc. | Semiconductor device having a semiconductor film of low oxygen concentration |
JP3353277B2 (ja) | 1992-09-25 | 2002-12-03 | ソニー株式会社 | エピタキシャルウェハの製造方法 |
JP3941075B2 (ja) | 1996-07-18 | 2007-07-04 | ソニー株式会社 | エピタキシャルシリコン基板及び固体撮像装置並びにこれらの製造方法 |
JPH11145147A (ja) * | 1997-11-11 | 1999-05-28 | Nec Corp | 半導体装置および半導体装置の製造方法 |
JP4069554B2 (ja) | 1999-09-30 | 2008-04-02 | 株式会社Sumco | エピタキシャルシリコンウェーハの製造方法 |
JP2001237247A (ja) | 2000-02-25 | 2001-08-31 | Shin Etsu Handotai Co Ltd | エピタキシャルウエーハの製造方法及びエピタキシャルウエーハ、並びにエピタキシャル成長用czシリコンウエーハ |
JP4656788B2 (ja) * | 2001-11-19 | 2011-03-23 | 信越半導体株式会社 | シリコンエピタキシャルウェーハの製造方法 |
JP4288406B2 (ja) * | 2003-01-17 | 2009-07-01 | 株式会社ニコン | 固体撮像装置の製造方法 |
DE102007033873A1 (de) | 2007-07-20 | 2009-01-22 | Infineon Technologies Austria Ag | Verfahren zur Dotierung eines Halbleiterwafers und Halbleiterbauelement |
EP2112254A3 (en) | 2008-03-05 | 2011-06-01 | Sumco Corporation | Silicon substrate and manufacturing method thereof |
JP5401809B2 (ja) | 2008-03-05 | 2014-01-29 | 株式会社Sumco | シリコン基板とその製造方法 |
JP5401808B2 (ja) | 2008-03-05 | 2014-01-29 | 株式会社Sumco | シリコン基板とその製造方法 |
JP2009274888A (ja) | 2008-05-13 | 2009-11-26 | Shin Etsu Handotai Co Ltd | シリコン単結晶製造方法及びシリコン単結晶ウェーハ |
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TWI523206B (zh) | 2016-02-21 |
JP2013089858A (ja) | 2013-05-13 |
DE112012003985B4 (de) | 2022-06-30 |
KR102000457B1 (ko) | 2019-07-16 |
KR20140084049A (ko) | 2014-07-04 |
US9425345B2 (en) | 2016-08-23 |
DE112012003985T5 (de) | 2014-08-21 |
TW201340299A (zh) | 2013-10-01 |
WO2013057887A1 (ja) | 2013-04-25 |
US20140374861A1 (en) | 2014-12-25 |
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