JP5745707B2 - 半導体デバイス検査装置及び半導体デバイス検査方法 - Google Patents
半導体デバイス検査装置及び半導体デバイス検査方法 Download PDFInfo
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- JP5745707B2 JP5745707B2 JP2014559748A JP2014559748A JP5745707B2 JP 5745707 B2 JP5745707 B2 JP 5745707B2 JP 2014559748 A JP2014559748 A JP 2014559748A JP 2014559748 A JP2014559748 A JP 2014559748A JP 5745707 B2 JP5745707 B2 JP 5745707B2
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- 239000004065 semiconductor Substances 0.000 title claims description 113
- 238000007689 inspection Methods 0.000 title claims description 46
- 238000000034 method Methods 0.000 title claims description 24
- 238000001228 spectrum Methods 0.000 claims description 133
- 238000001514 detection method Methods 0.000 claims description 114
- 230000003287 optical effect Effects 0.000 claims description 39
- 238000012360 testing method Methods 0.000 claims description 31
- 230000001360 synchronised effect Effects 0.000 claims description 15
- 230000007274 generation of a signal involved in cell-cell signaling Effects 0.000 claims description 11
- 230000001678 irradiating effect Effects 0.000 claims description 2
- 238000013507 mapping Methods 0.000 description 9
- 230000010354 integration Effects 0.000 description 4
- 238000012937 correction Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000013307 optical fiber Substances 0.000 description 2
- 230000005856 abnormality Effects 0.000 description 1
- 230000002238 attenuated effect Effects 0.000 description 1
- 230000001427 coherent effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
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Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/265—Contactless testing
- G01R31/2656—Contactless testing using non-ionising electromagnetic radiation, e.g. optical radiation
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/9501—Semiconductor wafers
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R23/00—Arrangements for measuring frequencies; Arrangements for analysing frequency spectra
- G01R23/16—Spectrum analysis; Fourier analysis
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/2601—Apparatus or methods therefor
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/265—Contactless testing
- G01R31/2653—Contactless testing using electron beams
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
- G01R31/2851—Testing of integrated circuits [IC]
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
- G01R31/302—Contactless testing
- G01R31/305—Contactless testing using electron beams
- G01R31/307—Contactless testing using electron beams of integrated circuits
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
- G01R31/302—Contactless testing
- G01R31/308—Contactless testing using non-ionising electromagnetic radiation, e.g. optical radiation
- G01R31/311—Contactless testing using non-ionising electromagnetic radiation, e.g. optical radiation of integrated circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N2201/00—Features of devices classified in G01N21/00
- G01N2201/12—Circuits of general importance; Signal processing
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Toxicology (AREA)
- Electromagnetism (AREA)
- Manufacturing & Machinery (AREA)
- General Engineering & Computer Science (AREA)
- Computer Vision & Pattern Recognition (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Pathology (AREA)
- Immunology (AREA)
- General Health & Medical Sciences (AREA)
- Biochemistry (AREA)
- Analytical Chemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Power Engineering (AREA)
- Tests Of Electronic Circuits (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Measuring Leads Or Probes (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2014559748A JP5745707B2 (ja) | 2013-02-01 | 2014-01-30 | 半導体デバイス検査装置及び半導体デバイス検査方法 |
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013018683 | 2013-02-01 | ||
| JP2013018683 | 2013-02-01 | ||
| JP2014559748A JP5745707B2 (ja) | 2013-02-01 | 2014-01-30 | 半導体デバイス検査装置及び半導体デバイス検査方法 |
| PCT/JP2014/052146 WO2014119676A1 (ja) | 2013-02-01 | 2014-01-30 | 半導体デバイス検査装置及び半導体デバイス検査方法 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2015094299A Division JP6389797B2 (ja) | 2013-02-01 | 2015-05-01 | 半導体デバイス検査装置及び半導体デバイス検査方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP5745707B2 true JP5745707B2 (ja) | 2015-07-08 |
| JPWO2014119676A1 JPWO2014119676A1 (ja) | 2017-01-26 |
Family
ID=51262384
Family Applications (3)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2014559748A Active JP5745707B2 (ja) | 2013-02-01 | 2014-01-30 | 半導体デバイス検査装置及び半導体デバイス検査方法 |
| JP2014559747A Active JP5744353B2 (ja) | 2013-02-01 | 2014-01-30 | 半導体デバイス検査装置及び半導体デバイス検査方法 |
| JP2015094299A Active JP6389797B2 (ja) | 2013-02-01 | 2015-05-01 | 半導体デバイス検査装置及び半導体デバイス検査方法 |
Family Applications After (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2014559747A Active JP5744353B2 (ja) | 2013-02-01 | 2014-01-30 | 半導体デバイス検査装置及び半導体デバイス検査方法 |
| JP2015094299A Active JP6389797B2 (ja) | 2013-02-01 | 2015-05-01 | 半導体デバイス検査装置及び半導体デバイス検査方法 |
Country Status (5)
| Country | Link |
|---|---|
| US (4) | US9618563B2 (enExample) |
| JP (3) | JP5745707B2 (enExample) |
| KR (5) | KR20170069292A (enExample) |
| SG (3) | SG11201505836WA (enExample) |
| WO (2) | WO2014119675A1 (enExample) |
Families Citing this family (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20170069292A (ko) | 2013-02-01 | 2017-06-20 | 하마마츠 포토닉스 가부시키가이샤 | 반도체 디바이스 검사 장치 및 반도체 디바이스 검사 방법 |
| TWI619954B (zh) * | 2014-10-16 | 2018-04-01 | Dcg系統公司 | 雷射電壓測試系統與方法 |
| JP6714485B2 (ja) * | 2016-09-28 | 2020-06-24 | 浜松ホトニクス株式会社 | 半導体デバイス検査方法及び半導体デバイス検査装置 |
| JP2018072290A (ja) * | 2016-11-04 | 2018-05-10 | ルネサスエレクトロニクス株式会社 | 故障箇所特定装置および故障箇所特定方法 |
| US11719746B2 (en) * | 2018-06-28 | 2023-08-08 | Hitachi High-Tech Corporation | Semiconductor inspection device |
| US11011435B2 (en) * | 2018-11-20 | 2021-05-18 | Asm Technology Singapore Pte Ltd | Apparatus and method inspecting bonded semiconductor dice |
| JP7164488B2 (ja) * | 2019-05-31 | 2022-11-01 | 浜松ホトニクス株式会社 | 半導体デバイス検査方法及び半導体デバイス検査装置 |
| KR20220016033A (ko) * | 2019-05-31 | 2022-02-08 | 하마마츠 포토닉스 가부시키가이샤 | 반도체 디바이스 검사 방법 및 반도체 디바이스 검사 장치 |
| JP6824351B1 (ja) * | 2019-09-13 | 2021-02-03 | 浜松ホトニクス株式会社 | 半導体試料の検査装置及び検査方法 |
| US11204383B2 (en) * | 2019-09-30 | 2021-12-21 | Formfactor, Inc. | Methods for maintaining gap spacing between an optical probe of a probe system and an optical device of a device under test, and probe systems that perform the methods |
| US11133864B1 (en) * | 2020-04-24 | 2021-09-28 | Ciena Corporation | Measurement of crosstalk |
| KR102425048B1 (ko) * | 2020-12-24 | 2022-07-27 | 큐알티 주식회사 | 반도체 소자 테스트용 빔 검사 장치, 및 빔 검사 방법 |
| CN117280224A (zh) * | 2021-05-21 | 2023-12-22 | 株式会社日立高新技术 | 试样检查装置 |
| KR102586199B1 (ko) * | 2021-10-21 | 2023-10-06 | 큐알티 주식회사 | 전력 반도체 소자의 검사 방법, 및 이를 위한 검사 시스템 |
| KR102418633B1 (ko) * | 2021-12-22 | 2022-07-07 | 큐알티 주식회사 | 반도체 소자의 방사선 평가 방법, 및 반도체 소자의 방사선 평가 시스템 |
| KR102518783B1 (ko) * | 2022-06-23 | 2023-04-06 | 큐알티 주식회사 | 적응적 변형이 가능한 빔 제어기, 이를 이용한 반도체 소자의 테스트 장치, 및 이를 이용한 반도체 소자의 테스트 방법 |
Family Cites Families (34)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01169862A (ja) | 1987-12-25 | 1989-07-05 | Hitachi Ltd | 荷電粒子線装置 |
| JPH0513522A (ja) * | 1991-07-04 | 1993-01-22 | Advantest Corp | 電荷光学プローブ |
| JPH0547883A (ja) | 1991-08-12 | 1993-02-26 | Nippon Telegr & Teleph Corp <Ntt> | 集積回路の回路試験装置および回路試験方法 |
| JP3154531B2 (ja) * | 1991-12-18 | 2001-04-09 | 富士通株式会社 | 信号測定装置 |
| JPH06201803A (ja) | 1992-12-28 | 1994-07-22 | Fujitsu Ltd | 信号波形測定装置及び信号波形測定方法 |
| JPH07134147A (ja) * | 1993-11-10 | 1995-05-23 | Fujitsu Ltd | 信号波形測定装置 |
| SE502886C2 (sv) | 1994-06-13 | 1996-02-12 | Whirlpool Europ | Styrförfarande för en mikrovågsugn, mikrovågsugn och dess användning för tillagning/uppvärmning av en matvara enligt styrförfarandet |
| GB9411908D0 (en) | 1994-06-14 | 1994-08-03 | John Heyer Paper Ltd | Web monitoring for paper machines |
| JP3500216B2 (ja) | 1995-02-07 | 2004-02-23 | 浜松ホトニクス株式会社 | 電圧測定装置 |
| JP3500215B2 (ja) | 1995-02-07 | 2004-02-23 | 浜松ホトニクス株式会社 | 電圧測定装置 |
| DE19511869B4 (de) | 1995-03-31 | 2004-02-26 | Geiler, Hans-Dieter, Dr. | Verfahren und Anordnung zur Responseanalyse von Halbleitermaterialien mit optischer Anregung |
| KR960035045U (ko) | 1995-04-13 | 1996-11-21 | 김헌영 | 파이프 단열재의 마감처리에 사용되는 포장재 |
| US5905577A (en) | 1997-03-15 | 1999-05-18 | Schlumberger Technologies, Inc. | Dual-laser voltage probing of IC's |
| JPH11271363A (ja) | 1998-03-19 | 1999-10-08 | Ando Electric Co Ltd | 電気光学サンプリングオシロスコープ |
| US6252222B1 (en) | 2000-01-13 | 2001-06-26 | Schlumberger Technologies, Inc. | Differential pulsed laser beam probing of integrated circuits |
| US6976234B2 (en) | 2003-01-13 | 2005-12-13 | Credence Systems Corporation | Apparatus and method for measuring characteristics of dynamic electrical signals in integrated circuits |
| JP2005134196A (ja) | 2003-10-29 | 2005-05-26 | Nec Electronics Corp | 非破壊解析方法及び非破壊解析装置 |
| KR100674972B1 (ko) | 2005-05-24 | 2007-01-29 | 삼성전자주식회사 | 반도체 소자의 펄스 특성 측정 시스템 및 측정 방법 |
| US7659981B2 (en) | 2005-08-26 | 2010-02-09 | Dcg Systems, Inc. | Apparatus and method for probing integrated circuits using polarization difference probing |
| US7733100B2 (en) | 2005-08-26 | 2010-06-08 | Dcg Systems, Inc. | System and method for modulation mapping |
| JP5340524B2 (ja) | 2006-03-23 | 2013-11-13 | 浜松ホトニクス株式会社 | 放射線検出器及び放射線検出方法 |
| US7999949B2 (en) * | 2006-04-24 | 2011-08-16 | Raintree Scientific Instruments (Shanghai) Corporation | Spectroscopic ellipsometers |
| JP5181989B2 (ja) | 2008-10-03 | 2013-04-10 | ソニー株式会社 | 短パルス光源装置、レーザ駆動方法、光ピックアップ及び光ディスク装置 |
| US8754633B2 (en) * | 2009-05-01 | 2014-06-17 | Dcg Systems, Inc. | Systems and method for laser voltage imaging state mapping |
| JP2011075441A (ja) * | 2009-09-30 | 2011-04-14 | Hamamatsu Photonics Kk | 半導体デバイス故障解析装置 |
| US8309883B2 (en) | 2010-05-20 | 2012-11-13 | Ipg Photonics Corporation | Methods and systems for laser processing of materials |
| US8564301B2 (en) | 2010-11-08 | 2013-10-22 | Semiconductor Components Industries, Llc | Device and method for determining capacitance as a function of voltage |
| JP5894745B2 (ja) * | 2011-05-31 | 2016-03-30 | 浜松ホトニクス株式会社 | 集積回路検査装置 |
| JP6166032B2 (ja) * | 2012-11-06 | 2017-07-19 | 浜松ホトニクス株式会社 | 半導体デバイス検査装置及び半導体デバイス検査方法 |
| KR20170069292A (ko) * | 2013-02-01 | 2017-06-20 | 하마마츠 포토닉스 가부시키가이샤 | 반도체 디바이스 검사 장치 및 반도체 디바이스 검사 방법 |
| JP6283501B2 (ja) * | 2013-11-12 | 2018-02-21 | 浜松ホトニクス株式会社 | 周波数解析装置及び周波数解析方法 |
| JP6283507B2 (ja) * | 2013-11-29 | 2018-02-21 | 浜松ホトニクス株式会社 | 半導体デバイス計測装置及び半導体デバイス計測方法 |
| JP6407555B2 (ja) * | 2014-04-24 | 2018-10-17 | 浜松ホトニクス株式会社 | 画像生成装置及び画像生成方法 |
| JP6484051B2 (ja) * | 2015-02-10 | 2019-03-13 | 浜松ホトニクス株式会社 | 検査方法及び検査装置 |
-
2014
- 2014-01-30 KR KR1020177015376A patent/KR20170069292A/ko not_active Ceased
- 2014-01-30 JP JP2014559748A patent/JP5745707B2/ja active Active
- 2014-01-30 SG SG11201505836WA patent/SG11201505836WA/en unknown
- 2014-01-30 US US14/764,327 patent/US9618563B2/en active Active
- 2014-01-30 KR KR1020157019600A patent/KR101679527B1/ko active Active
- 2014-01-30 KR KR1020167032138A patent/KR101764560B1/ko active Active
- 2014-01-30 WO PCT/JP2014/052145 patent/WO2014119675A1/ja not_active Ceased
- 2014-01-30 US US14/764,246 patent/US9562944B2/en active Active
- 2014-01-30 KR KR1020177024676A patent/KR101923846B1/ko active Active
- 2014-01-30 SG SG11201505833XA patent/SG11201505833XA/en unknown
- 2014-01-30 JP JP2014559747A patent/JP5744353B2/ja active Active
- 2014-01-30 KR KR1020157018901A patent/KR101777031B1/ko active Active
- 2014-01-30 WO PCT/JP2014/052146 patent/WO2014119676A1/ja not_active Ceased
- 2014-01-30 SG SG10201604835TA patent/SG10201604835TA/en unknown
-
2015
- 2015-05-01 JP JP2015094299A patent/JP6389797B2/ja active Active
-
2016
- 2016-07-26 US US15/219,946 patent/US10191104B2/en active Active
-
2017
- 2017-03-02 US US15/447,525 patent/US10101383B2/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| US9562944B2 (en) | 2017-02-07 |
| KR20160135845A (ko) | 2016-11-28 |
| KR101764560B1 (ko) | 2017-08-02 |
| SG10201604835TA (en) | 2016-07-28 |
| US20160334459A1 (en) | 2016-11-17 |
| US9618563B2 (en) | 2017-04-11 |
| US10191104B2 (en) | 2019-01-29 |
| KR20150103686A (ko) | 2015-09-11 |
| US20150377959A1 (en) | 2015-12-31 |
| US20150369755A1 (en) | 2015-12-24 |
| SG11201505836WA (en) | 2015-09-29 |
| JP5744353B2 (ja) | 2015-07-08 |
| KR101679527B1 (ko) | 2016-11-24 |
| JP2015145883A (ja) | 2015-08-13 |
| US20170176521A1 (en) | 2017-06-22 |
| KR20150112954A (ko) | 2015-10-07 |
| KR20170104637A (ko) | 2017-09-15 |
| KR101923846B1 (ko) | 2018-11-29 |
| KR20170069292A (ko) | 2017-06-20 |
| KR101777031B1 (ko) | 2017-09-08 |
| JP6389797B2 (ja) | 2018-09-12 |
| SG11201505833XA (en) | 2015-08-28 |
| WO2014119675A1 (ja) | 2014-08-07 |
| JPWO2014119675A1 (ja) | 2017-01-26 |
| WO2014119676A1 (ja) | 2014-08-07 |
| JPWO2014119676A1 (ja) | 2017-01-26 |
| US10101383B2 (en) | 2018-10-16 |
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