KR20170069292A - 반도체 디바이스 검사 장치 및 반도체 디바이스 검사 방법 - Google Patents

반도체 디바이스 검사 장치 및 반도체 디바이스 검사 방법 Download PDF

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Publication number
KR20170069292A
KR20170069292A KR1020177015376A KR20177015376A KR20170069292A KR 20170069292 A KR20170069292 A KR 20170069292A KR 1020177015376 A KR1020177015376 A KR 1020177015376A KR 20177015376 A KR20177015376 A KR 20177015376A KR 20170069292 A KR20170069292 A KR 20170069292A
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analyzer
semiconductor device
frequency
phase
signal
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KR1020177015376A
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Korean (ko)
Inventor
도모노리 나카무라
미츠노리 니시자와
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하마마츠 포토닉스 가부시키가이샤
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Publication of KR20170069292A publication Critical patent/KR20170069292A/ko
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G01R31/265—Contactless testing
    • G01R31/2656—Contactless testing using non-ionising electromagnetic radiation, e.g. optical radiation
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501—Semiconductor wafers
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R23/00—Arrangements for measuring frequencies; Arrangements for analysing frequency spectra
    • G01R23/16—Spectrum analysis; Fourier analysis
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G01R31/2601—Apparatus or methods therefor
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/2851—Testing of integrated circuits [IC]
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/302—Contactless testing
    • G01R31/308—Contactless testing using non-ionising electromagnetic radiation, e.g. optical radiation
    • G01R31/311—Contactless testing using non-ionising electromagnetic radiation, e.g. optical radiation of integrated circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2201/00—Features of devices classified in G01N21/00
    • G01N2201/12—Circuits of general importance; Signal processing

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Toxicology (AREA)
  • Electromagnetism (AREA)
  • Manufacturing & Machinery (AREA)
  • General Engineering & Computer Science (AREA)
  • Computer Vision & Pattern Recognition (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Pathology (AREA)
  • Immunology (AREA)
  • General Health & Medical Sciences (AREA)
  • Biochemistry (AREA)
  • Analytical Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Power Engineering (AREA)
  • Tests Of Electronic Circuits (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Measuring Leads Or Probes (AREA)
KR1020177015376A 2013-02-01 2014-01-30 반도체 디바이스 검사 장치 및 반도체 디바이스 검사 방법 Ceased KR20170069292A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JPJP-P-2013-018683 2013-02-01
JP2013018683 2013-02-01
PCT/JP2014/052146 WO2014119676A1 (ja) 2013-02-01 2014-01-30 半導体デバイス検査装置及び半導体デバイス検査方法

Related Parent Applications (1)

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KR1020167032138A Division KR101764560B1 (ko) 2013-02-01 2014-01-30 반도체 디바이스 검사 장치 및 반도체 디바이스 검사 방법

Publications (1)

Publication Number Publication Date
KR20170069292A true KR20170069292A (ko) 2017-06-20

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KR1020177015376A Ceased KR20170069292A (ko) 2013-02-01 2014-01-30 반도체 디바이스 검사 장치 및 반도체 디바이스 검사 방법
KR1020157019600A Active KR101679527B1 (ko) 2013-02-01 2014-01-30 반도체 디바이스 검사 장치 및 반도체 디바이스 검사 방법
KR1020167032138A Active KR101764560B1 (ko) 2013-02-01 2014-01-30 반도체 디바이스 검사 장치 및 반도체 디바이스 검사 방법
KR1020177024676A Active KR101923846B1 (ko) 2013-02-01 2014-01-30 반도체 디바이스 검사 장치 및 반도체 디바이스 검사 방법
KR1020157018901A Active KR101777031B1 (ko) 2013-02-01 2014-01-30 반도체 디바이스 검사 장치 및 반도체 디바이스 검사 방법

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KR1020157019600A Active KR101679527B1 (ko) 2013-02-01 2014-01-30 반도체 디바이스 검사 장치 및 반도체 디바이스 검사 방법
KR1020167032138A Active KR101764560B1 (ko) 2013-02-01 2014-01-30 반도체 디바이스 검사 장치 및 반도체 디바이스 검사 방법
KR1020177024676A Active KR101923846B1 (ko) 2013-02-01 2014-01-30 반도체 디바이스 검사 장치 및 반도체 디바이스 검사 방법
KR1020157018901A Active KR101777031B1 (ko) 2013-02-01 2014-01-30 반도체 디바이스 검사 장치 및 반도체 디바이스 검사 방법

Country Status (5)

Country Link
US (4) US9618563B2 (enExample)
JP (3) JP5745707B2 (enExample)
KR (5) KR20170069292A (enExample)
SG (3) SG11201505836WA (enExample)
WO (2) WO2014119675A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20220070297A (ko) * 2019-09-30 2022-05-30 폼팩터, 인크. 프로브 시스템의 광학 프로브와 보정 구조 사이의 광학적 커플링을 특성분석하기 위한 프로브 시스템 및 방법

Families Citing this family (15)

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KR20170069292A (ko) 2013-02-01 2017-06-20 하마마츠 포토닉스 가부시키가이샤 반도체 디바이스 검사 장치 및 반도체 디바이스 검사 방법
TWI619954B (zh) * 2014-10-16 2018-04-01 Ｄｃｇ系統公司 雷射電壓測試系統與方法
JP6714485B2 (ja) * 2016-09-28 2020-06-24 浜松ホトニクス株式会社 半導体デバイス検査方法及び半導体デバイス検査装置
JP2018072290A (ja) * 2016-11-04 2018-05-10 ルネサスエレクトロニクス株式会社 故障箇所特定装置および故障箇所特定方法
US11719746B2 (en) * 2018-06-28 2023-08-08 Hitachi High-Tech Corporation Semiconductor inspection device
US11011435B2 (en) * 2018-11-20 2021-05-18 Asm Technology Singapore Pte Ltd Apparatus and method inspecting bonded semiconductor dice
JP7164488B2 (ja) * 2019-05-31 2022-11-01 浜松ホトニクス株式会社 半導体デバイス検査方法及び半導体デバイス検査装置
KR20220016033A (ko) * 2019-05-31 2022-02-08 하마마츠 포토닉스 가부시키가이샤 반도체 디바이스 검사 방법 및 반도체 디바이스 검사 장치
JP6824351B1 (ja) * 2019-09-13 2021-02-03 浜松ホトニクス株式会社 半導体試料の検査装置及び検査方法
US11133864B1 (en) * 2020-04-24 2021-09-28 Ciena Corporation Measurement of crosstalk
KR102425048B1 (ko) * 2020-12-24 2022-07-27 큐알티 주식회사 반도체 소자 테스트용 빔 검사 장치, 및 빔 검사 방법
CN117280224A (zh) * 2021-05-21 2023-12-22 株式会社日立高新技术 试样检查装置
KR102586199B1 (ko) * 2021-10-21 2023-10-06 큐알티 주식회사 전력 반도체 소자의 검사 방법, 및 이를 위한 검사 시스템
KR102418633B1 (ko) * 2021-12-22 2022-07-07 큐알티 주식회사 반도체 소자의 방사선 평가 방법, 및 반도체 소자의 방사선 평가 시스템
KR102518783B1 (ko) * 2022-06-23 2023-04-06 큐알티 주식회사 적응적 변형이 가능한 빔 제어기, 이를 이용한 반도체 소자의 테스트 장치, 및 이를 이용한 반도체 소자의 테스트 방법

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20220070297A (ko) * 2019-09-30 2022-05-30 폼팩터, 인크. 프로브 시스템의 광학 프로브와 보정 구조 사이의 광학적 커플링을 특성분석하기 위한 프로브 시스템 및 방법

Also Published As

Publication number Publication date
US9562944B2 (en) 2017-02-07
KR20160135845A (ko) 2016-11-28
KR101764560B1 (ko) 2017-08-02
SG10201604835TA (en) 2016-07-28
US20160334459A1 (en) 2016-11-17
US9618563B2 (en) 2017-04-11
US10191104B2 (en) 2019-01-29
KR20150103686A (ko) 2015-09-11
US20150377959A1 (en) 2015-12-31
US20150369755A1 (en) 2015-12-24
SG11201505836WA (en) 2015-09-29
JP5744353B2 (ja) 2015-07-08
KR101679527B1 (ko) 2016-11-24
JP2015145883A (ja) 2015-08-13
US20170176521A1 (en) 2017-06-22
KR20150112954A (ko) 2015-10-07
KR20170104637A (ko) 2017-09-15
KR101923846B1 (ko) 2018-11-29
KR101777031B1 (ko) 2017-09-08
JP6389797B2 (ja) 2018-09-12
JP5745707B2 (ja) 2015-07-08
SG11201505833XA (en) 2015-08-28
WO2014119675A1 (ja) 2014-08-07
JPWO2014119675A1 (ja) 2017-01-26
WO2014119676A1 (ja) 2014-08-07
JPWO2014119676A1 (ja) 2017-01-26
US10101383B2 (en) 2018-10-16

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