JP5714496B2 - インプリント・リソグラフィーにおける離型剤分離制御 - Google Patents
インプリント・リソグラフィーにおける離型剤分離制御 Download PDFInfo
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Classifications
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07D—HETEROCYCLIC COMPOUNDS
- C07D237/00—Heterocyclic compounds containing 1,2-diazine or hydrogenated 1,2-diazine rings
- C07D237/02—Heterocyclic compounds containing 1,2-diazine or hydrogenated 1,2-diazine rings not condensed with other rings
- C07D237/06—Heterocyclic compounds containing 1,2-diazine or hydrogenated 1,2-diazine rings not condensed with other rings having three double bonds between ring members or between ring members and non-ring members
- C07D237/10—Heterocyclic compounds containing 1,2-diazine or hydrogenated 1,2-diazine rings not condensed with other rings having three double bonds between ring members or between ring members and non-ring members with hetero atoms or with carbon atoms having three bonds to hetero atoms with at the most one bond to halogen, e.g. ester or nitrile radicals, directly attached to ring carbon atoms
- C07D237/24—Carbon atoms having three bonds to hetero atoms with at the most one bond to halogen
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C233/00—Carboxylic acid amides
- C07C233/01—Carboxylic acid amides having carbon atoms of carboxamide groups bound to hydrogen atoms or to acyclic carbon atoms
- C07C233/16—Carboxylic acid amides having carbon atoms of carboxamide groups bound to hydrogen atoms or to acyclic carbon atoms having the nitrogen atom of at least one of the carboxamide groups bound to a carbon atom of a hydrocarbon radical substituted by singly-bound oxygen atoms
- C07C233/17—Carboxylic acid amides having carbon atoms of carboxamide groups bound to hydrogen atoms or to acyclic carbon atoms having the nitrogen atom of at least one of the carboxamide groups bound to a carbon atom of a hydrocarbon radical substituted by singly-bound oxygen atoms with the substituted hydrocarbon radical bound to the nitrogen atom of the carboxamide group by an acyclic carbon atom
- C07C233/18—Carboxylic acid amides having carbon atoms of carboxamide groups bound to hydrogen atoms or to acyclic carbon atoms having the nitrogen atom of at least one of the carboxamide groups bound to a carbon atom of a hydrocarbon radical substituted by singly-bound oxygen atoms with the substituted hydrocarbon radical bound to the nitrogen atom of the carboxamide group by an acyclic carbon atom having the carbon atom of the carboxamide group bound to a hydrogen atom or to a carbon atom of an acyclic saturated carbon skeleton
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Nanotechnology (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Shaping Of Tube Ends By Bending Or Straightening (AREA)
- Moulds For Moulding Plastics Or The Like (AREA)
- Polyethers (AREA)
- Other Resins Obtained By Reactions Not Involving Carbon-To-Carbon Unsaturated Bonds (AREA)
Description
Raはそれぞれ独立して、H3C[OCH2CH2]x[OCH2CHCH3]y−であり、かつmおよびnならびにxおよびyは整数である。
Rf−L−(RO)zR’
として示されてもよく、本明細書では構造1の界面活性剤と呼ばれる。構造1では、(RO)zは、2〜4個の炭素原子を有する、オキシアルキル基を有するポリ(オキシアルキレン)であり(例えば、Rは、−CH2CH2−、−CH2CH2CH2−、−CH(CH3)CH2−、または−CH(CH3)CH(CH3)−)であり;zは整数であり;R’はHまたはC1〜C4アルキルの末端基であり;かつRfはフッ素含有部分(限定するものではないが、フッ素化アルキル基、フッ素化エーテル基、またはそれらの組み合わせを含み得る)である。Lは、疎水性部分Rfと親水性部分(ROz)R’とを一緒に連結する炭素含有リンカー基である。
HO(CH2CH2O)yCH2CF2O(CF2CF2O)m(CF2O)nCF2CH2(OCH2CH2)xOH
またはHO(EO)yR’f(EO)xHを有し、ここでEOとはポリエチレン・オキシドを指す。構造1の界面活性剤とは異なり、FLUOROLINK(登録商標)E10は2つの親水性末端および1つの中央の疎水性部分R’fを有する。R’fは、約1000amuの分子量を有するフッ素化エーテルセグメントである。x+yの平均値は約3.5〜4である。FLUOROLINK(登録商標)E10は、液体レジストに直接加えられてもよい。しかし、2つの末端のヒドロキシル基を備えていてさえ、FLUOROLINK(登録商標)E10は、構造1界面活性剤と同様に挙動し、テンプレートがレジストから離された後、テンプレートと固化されたレジストとの間には類似の界面活性剤分離が見られる。
ROOC−CF2O(CF2CF2O)m(CF2O)nCF2−COOR
FLUOROLINK(登録商標)L10については、m/n=1.8−2.0であり、かつR=C2H5である。FLUOROLINK(登録商標)L10は、2つのエステル末端基および中央の疎水性(フッ素化)部分を有する。フッ素化部分の分子量は約1000amuである。FLUOROLINK(登録商標)C10については、m/n=1.8−2.0およびR=Hである。FLUOROLINK(登録商標)C10は、2つのカルボン酸末端基および中央の疎水性(フッ素化)部分を有する。フッ素化部分の分子量は約1500amuである。FOMBLIN(登録商標)Z−DEALについては、m/n=0.9−1.0であり、かつR=CH3である。FOMBLIN(登録商標)Z−DEALは、2つのエステル末端基および中央の疎水性(フッ素化)部分を有する。フッ素化部分の分子量は約2000amuである。
46 パターン化した層。
Claims (17)
- インプリント・リソグラフィー離型剤であって:
非極性のフッ素化部分と;
前記非極性のフッ素化部分に結合した極性のポリ(オキシアルキレン)部分にして、多重のオキシアルキレン単位から形成され、前記多重度が少なくとも1つのエチレンオキシド単位を含む、極性のポリ(オキシアルキレン)部分と、
を含む界面活性剤であって、
インプリント・リソグラフィー・テンプレート(18)の表面と複数の極性の相互作用を形成し得るものであり、
前記フッ素化部分が、ペルフルオロ化ポリエーテル部分を含む、離型剤。 - 前記極性のポリ(オキシアルキレン)部分は、少なくとも3、少なくとも5、または少なくとも10個のエチレンオキシド単位を含む多重のオキシアルキレン単位から形成される、請求項1に記載のインプリント・リソグラフィー離型剤。
- 前記極性のポリ(オキシアルキレン)部分が、少なくとも1つの酸化プロピレン単位を含む多重のオキシアルキレン単位から形成される、請求項1または2に記載のインプリント・リソグラフィー離型剤。
- 前記離型剤がさらに、前記インプリント・リソグラフィー・テンプレート(18)の表面と極性の相互作用を形成し得る1つ以上の窒素原子を含む、請求項1〜3のいずれか1項に記載のインプリント・リソグラフィー離型剤。
- 前記離型剤が、前記テンプレート(18)の表面との極性の相互作用を形成し得るピリダジニル基を含む、請求項4に記載のインプリント・リソグラフィー離型剤。
- 前記離型剤がさらに、前記インプリント・リソグラフィー・テンプレートの表面と共有結合を形成し得る原子を含み、前記共有結合の強度が前記テンプレート(18)の表面でのケイ素・酸素結合の強度よりも小さい、請求項1〜5のいずれか1項に記載のインプリント・リソグラフィー離型剤。
- 前記離型剤がさらに、ホウ素原子を含み、かつ前記ホウ素原子が前記インプリント・リソグラフィー・テンプレート(18)の表面と共有結合を形成し得る請求項6に記載のインプリント・リソグラフィー離型剤。
- 前記離型剤が、前記テンプレート(18)の表面と環状水素結合相互作用を形成し得る極性基を含む、請求項1〜7のいずれか1項に記載のインプリント・リソグラフィー離型剤。
- 前記離型剤がさらに、前記テンプレート(18)の表面と極性の相互作用を形成し得る2つ以上のヒドロキシル基を含む、請求項1〜8のいずれか1項に記載のインプリント・リソグラフィー離型剤。
- 前記離型剤がさらに、前記テンプレート(18)の表面と極性の相互作用を形成し得る1つ以上のカルボキシル基を含む、請求項1〜9のいずれか1項に記載のインプリント・リソグラフィー離型剤。
- 前記離型剤が室温で液体である、請求項1〜11のいずれか1項に記載のインプリント・リソグラフィー離型剤。
- 前記離型剤が非イオン性である、請求項1〜12のいずれか1項に記載のインプリント・リソグラフィー離型剤。
- 請求項1に記載の離型剤を含むインプリント・リソグラフィー液体レジスト。
- 請求項1に記載の離型剤を含む、インプリント・リソグラフィー・モールド・アセンブリ(18、34、12)。
- インプリント・リソグラフィー方法であって:
インプリント・リソグラフィー基板(12)上に重合可能な組成物(34)を配置する工程と;
前記重合可能な組成物(34)とインプリント・リソグラフィー・テンプレート(18)とを接触させる工程と;
前記重合可能な組成物を固化して、前記インプリント・リソグラフィー基板(12)に接着されたパターン化した層(46)を形成する工程と;
前記固化されたパターン化した層(46)から前記インプリント・リソグラフィー・テンプレート(18)を分離する工程と、
を包含し、
前記重合可能な組成物(34)がインプリント・リソグラフィー離型剤を含み、前記離型剤は界面活性剤であり、前記離型剤には、非極性のフッ素化部分と、前記非極性のフッ素化部分に結合した極性のポリ(オキシアルキレン)部分にして、少なくとも1つのエチレンオキシド単位を含む多重のオキシアルキレン単位から形成される、極性のポリ(オキシアルキレン)部分とが含まれており、ここで前記フッ素化部分が、ペルフルオロ化ポリエーテル部分を含み、
前記重合可能な組成物(34)と前記インプリント・リソグラフィー・テンプレート(18)とを接触させる工程が、前記離型剤と前記インプリント・リソグラフィー・テンプレートの表面との間に複数の極性相互作用を形成する工程を包含している、
ことを特徴する、インプリント・リソグラフィー方法。 - 前記固化したパターン化した層(46)から前記インプリント・リソグラフィー・テンプレート(18)を分離する工程が、前記離型剤と前記インプリント・リソグラフィー・テンプレートの表面との間の極性相互作用の約半分未満を破壊する工程を包含する、請求項16に記載のインプリント・リソグラフィー方法。
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Families Citing this family (36)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20050160934A1 (en) * | 2004-01-23 | 2005-07-28 | Molecular Imprints, Inc. | Materials and methods for imprint lithography |
US20060108710A1 (en) * | 2004-11-24 | 2006-05-25 | Molecular Imprints, Inc. | Method to reduce adhesion between a conformable region and a mold |
US20050156353A1 (en) * | 2004-01-15 | 2005-07-21 | Watts Michael P. | Method to improve the flow rate of imprinting material |
US8142703B2 (en) | 2005-10-05 | 2012-03-27 | Molecular Imprints, Inc. | Imprint lithography method |
US20100109195A1 (en) | 2008-11-05 | 2010-05-06 | Molecular Imprints, Inc. | Release agent partition control in imprint lithography |
JP5060517B2 (ja) * | 2009-06-24 | 2012-10-31 | 東京エレクトロン株式会社 | インプリントシステム |
JP5443103B2 (ja) * | 2009-09-10 | 2014-03-19 | 株式会社東芝 | パターン形成方法 |
TWI415737B (zh) * | 2010-06-07 | 2013-11-21 | Mitsubishi Rayon Co | 表面具有微細凹凸結構的物品的製造方法 |
JP5032642B2 (ja) * | 2010-09-30 | 2012-09-26 | 株式会社東芝 | インプリントリソグラフィ装置及び方法 |
JP5620827B2 (ja) * | 2011-01-06 | 2014-11-05 | 富士フイルム株式会社 | ナノインプリントモールドの洗浄方法 |
US8651849B2 (en) * | 2011-01-10 | 2014-02-18 | Xerox Corporation | Digitally prepared stamp masters and methods of making the same |
JP2014011254A (ja) * | 2012-06-28 | 2014-01-20 | Dainippon Printing Co Ltd | 位置合わせマーク、該マークを備えたテンプレート、および、該テンプレートの製造方法 |
JP2014124873A (ja) * | 2012-12-27 | 2014-07-07 | Seiko Epson Corp | インプリント用型およびインプリント用型の製造方法 |
JP6628129B2 (ja) * | 2014-09-16 | 2020-01-08 | 大日本印刷株式会社 | パターン形成基板の製造方法、慣らし用基板、及び基板の組合体 |
JP6341448B2 (ja) * | 2014-09-19 | 2018-06-13 | 大日本印刷株式会社 | ナノインプリント用接合体の検査方法、その検査装置およびその製造方法 |
JP6525567B2 (ja) | 2014-12-02 | 2019-06-05 | キヤノン株式会社 | インプリント装置及び物品の製造方法 |
AT516558B1 (de) * | 2014-12-10 | 2018-02-15 | Joanneum Res Forschungsgmbh | Prägelack, Verfahren zum Prägen sowie mit dem Prägelack beschichtete Substratoberfläche |
US20170066208A1 (en) | 2015-09-08 | 2017-03-09 | Canon Kabushiki Kaisha | Substrate pretreatment for reducing fill time in nanoimprint lithography |
US10488753B2 (en) | 2015-09-08 | 2019-11-26 | Canon Kabushiki Kaisha | Substrate pretreatment and etch uniformity in nanoimprint lithography |
US10620539B2 (en) | 2016-03-31 | 2020-04-14 | Canon Kabushiki Kaisha | Curing substrate pretreatment compositions in nanoimprint lithography |
US10095106B2 (en) | 2016-03-31 | 2018-10-09 | Canon Kabushiki Kaisha | Removing substrate pretreatment compositions in nanoimprint lithography |
US10134588B2 (en) | 2016-03-31 | 2018-11-20 | Canon Kabushiki Kaisha | Imprint resist and substrate pretreatment for reducing fill time in nanoimprint lithography |
US10509313B2 (en) | 2016-06-28 | 2019-12-17 | Canon Kabushiki Kaisha | Imprint resist with fluorinated photoinitiator and substrate pretreatment for reducing fill time in nanoimprint lithography |
US10317793B2 (en) | 2017-03-03 | 2019-06-11 | Canon Kabushiki Kaisha | Substrate pretreatment compositions for nanoimprint lithography |
KR102452035B1 (ko) | 2017-04-14 | 2022-10-11 | 삼성디스플레이 주식회사 | 소프트 몰드용 조성물, 이를 이용하여 제조된 소프트 몰드 |
US11126083B2 (en) | 2018-01-24 | 2021-09-21 | Canon Kabushiki Kaisha | Superstrate and a method of using the same |
US10857724B1 (en) | 2018-12-11 | 2020-12-08 | Facebook Technologies, Llc | Reducing adhesive failure during nanoimprint lithography demolding |
US11262650B1 (en) * | 2018-12-11 | 2022-03-01 | Facebook Technologies, Llc | Reducing adhesive failure during nanoimprint lithography demolding |
US11294278B1 (en) * | 2018-12-11 | 2022-04-05 | Facebook Technologies, Llc | Reducing adhesive failure during nanoimprint lithography demolding |
JP7263885B2 (ja) * | 2019-03-29 | 2023-04-25 | 大日本印刷株式会社 | 被加工基板及びインプリント方法 |
JP7284000B2 (ja) * | 2019-06-25 | 2023-05-30 | ユニマテック株式会社 | 含フッ素オリゴマーを有効成分とする表面改質剤 |
KR102297673B1 (ko) * | 2019-10-28 | 2021-09-06 | 주식회사 삼양사 | 표면 특성 및 접착성이 우수한 유리섬유-강화 폴리카보네이트 수지 조성물 및 이를 포함하는 성형품 |
US11892771B2 (en) * | 2020-04-20 | 2024-02-06 | Applied Materials, Inc. | Methods for increasing the density of high-index nanoimprint lithography films |
CN113150422A (zh) * | 2021-04-20 | 2021-07-23 | 新沂崚峻光电科技有限公司 | 一种纳米压印膜层的制备方法 |
US11753497B2 (en) | 2021-04-29 | 2023-09-12 | Canon Kabushiki Kaisha | Photocurable composition |
WO2023041709A1 (en) * | 2021-09-20 | 2023-03-23 | Nil Technology Aps | Embedded, slanted optical grating structures |
Family Cites Families (103)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3403122A (en) * | 1967-12-22 | 1968-09-24 | Minnesota Mining & Mfg | Emulsion polymerization of water insoluble omega-(n-perfluoroalkanesulfonyl) aminoalkyl acrylates or methacrylates |
US3810874A (en) * | 1969-03-10 | 1974-05-14 | Minnesota Mining & Mfg | Polymers prepared from poly(perfluoro-alkylene oxide) compounds |
US3787351A (en) * | 1972-02-28 | 1974-01-22 | Minnesota Mining & Mfg | Use of soluble fluoroaliphatic oligomers in resin composite articles |
US4264484A (en) * | 1979-01-24 | 1981-04-28 | Minnesota Mining And Manufacturing Company | Carpet treatment |
US4303761A (en) * | 1979-05-29 | 1981-12-01 | E. I. Du Pont De Nemours And Company | Fluoroelastomer gelling agents and products made therefrom |
US4585829A (en) * | 1983-09-30 | 1986-04-29 | Union Carbide Corporation | Internal mold release for reaction injection molded polyurethanes |
US4614667A (en) * | 1984-05-21 | 1986-09-30 | Minnesota Mining And Manufacturing Company | Composite low surface energy liner of perfluoropolyether |
US4845008A (en) * | 1986-02-20 | 1989-07-04 | Fuji Photo Film Co., Ltd. | Light-sensitive positive working, o-guinone diazide presensitized plate with mixed solvent |
JPH0762761B2 (ja) * | 1986-03-28 | 1995-07-05 | 富士写真フイルム株式会社 | 画像形成材料 |
US4835084A (en) * | 1988-03-21 | 1989-05-30 | Eastman Kodak Company | Electrostatographic toner and method of producing the same |
US6054034A (en) * | 1990-02-28 | 2000-04-25 | Aclara Biosciences, Inc. | Acrylic microchannels and their use in electrophoretic applications |
GB9123070D0 (en) | 1991-10-30 | 1991-12-18 | Domino Printing Sciences Plc | Ink |
GB9014299D0 (en) | 1990-06-27 | 1990-08-15 | Domino Printing Sciences Plc | Ink composition |
JPH05301228A (ja) | 1992-04-28 | 1993-11-16 | Daikin Ind Ltd | 離型剤 |
US5298556A (en) * | 1992-07-21 | 1994-03-29 | Tse Industries, Inc. | Mold release composition and method coating a mold core |
US5283148A (en) * | 1992-09-18 | 1994-02-01 | Minnesota Mining And Manufacturing Company | Liquid toners for use with perfluorinated solvents |
DE4306997A1 (de) * | 1993-03-05 | 1994-09-08 | Thera Ges Fuer Patente | Hydrophilierte Polyether |
US5380644A (en) * | 1993-08-10 | 1995-01-10 | Minnesota Mining And Manufacturing Company | Additive for the reduction of mottle in photothermographic and thermographic elements |
US5389696A (en) * | 1993-09-17 | 1995-02-14 | Miles Inc. | Process for the production of molded products using internal mold release agents |
US5462700A (en) * | 1993-11-08 | 1995-10-31 | Alliedsignal Inc. | Process for making an array of tapered photopolymerized waveguides |
US5631314A (en) * | 1994-04-27 | 1997-05-20 | Tokyo Ohka Kogyo Co., Ltd. | Liquid coating composition for use in forming photoresist coating films and photoresist material using said composition |
US5837314A (en) * | 1994-06-10 | 1998-11-17 | Johnson & Johnson Vision Products, Inc. | Method and apparatus for applying a surfactant to mold surfaces |
US5542978A (en) * | 1994-06-10 | 1996-08-06 | Johnson & Johnson Vision Products, Inc. | Apparatus for applying a surfactant to mold surfaces |
JP3278306B2 (ja) * | 1994-10-31 | 2002-04-30 | 富士写真フイルム株式会社 | ポジ型フォトレジスト組成物 |
US6468642B1 (en) * | 1995-10-03 | 2002-10-22 | N.V. Bekaert S.A. | Fluorine-doped diamond-like coatings |
US5747234A (en) * | 1995-11-13 | 1998-05-05 | Eastman Kodak Company | Photographic element |
US20040137734A1 (en) * | 1995-11-15 | 2004-07-15 | Princeton University | Compositions and processes for nanoimprinting |
US6309580B1 (en) * | 1995-11-15 | 2001-10-30 | Regents Of The University Of Minnesota | Release surfaces, particularly for use in nanoimprint lithography |
US5772905A (en) | 1995-11-15 | 1998-06-30 | Regents Of The University Of Minnesota | Nanoimprint lithography |
US6204343B1 (en) * | 1996-12-11 | 2001-03-20 | 3M Innovative Properties Company | Room temperature curable resin |
JP2001521469A (ja) * | 1996-12-31 | 2001-11-06 | ダイノシス アクチェンゲェゼルシャフト | 自己接着性ラベルをディスク形状物に貼り付ける方法及び装置 |
US6156389A (en) * | 1997-02-03 | 2000-12-05 | Cytonix Corporation | Hydrophobic coating compositions, articles coated with said compositions, and processes for manufacturing same |
US6093455A (en) * | 1997-05-23 | 2000-07-25 | Deco Patents, Inc. | Method and compositions for decorating glass |
TW494125B (en) * | 1997-07-11 | 2002-07-11 | Rohm And Haas Compary | Preparation of fluorinated polymers |
US6169139B1 (en) * | 1998-04-27 | 2001-01-02 | Dupont Dow Elastomers Llc | Fluoroelastomer latex |
KR100273172B1 (ko) * | 1998-08-01 | 2001-03-02 | 윤덕용 | 아크릴 측쇄에 디옥사스피로환기 유도체를 갖는 화합물을 이용한 포토레지스트 |
EP1003078A3 (en) * | 1998-11-17 | 2001-11-07 | Corning Incorporated | Replicating a nanoscale pattern |
US6334960B1 (en) * | 1999-03-11 | 2002-01-01 | Board Of Regents, The University Of Texas System | Step and flash imprint lithography |
TW465815U (en) * | 1999-04-09 | 2001-11-21 | Hon Hai Prec Ind Co Ltd | Electrical connector |
CN1355739A (zh) * | 1999-06-11 | 2002-06-26 | 博士伦公司 | 用于生产接触镜片和其它眼科产品的带有保护涂层的镜片模具 |
US6276273B1 (en) * | 1999-06-11 | 2001-08-21 | Kodak Polychrome Graphics Llc | Surfactant-pretreated printing plate substrate, lithographic printing plate and method for production thereof |
WO2001018305A1 (en) * | 1999-09-10 | 2001-03-15 | Nano-Tex, Llc | Water-repellent and soil-resistant finish for textiles |
EP2082995B1 (en) * | 1999-10-27 | 2012-08-08 | 3M Innovative Properties Company | Method of reducing the surface tension, of forming a stable foam and to increase the wetting of a coating |
US6873087B1 (en) * | 1999-10-29 | 2005-03-29 | Board Of Regents, The University Of Texas System | High precision orientation alignment and gap control stages for imprint lithography processes |
US6774183B1 (en) * | 2000-04-27 | 2004-08-10 | Bostik, Inc. | Copolyesters having improved retained adhesion |
JP3802732B2 (ja) * | 2000-05-12 | 2006-07-26 | 信越化学工業株式会社 | レジスト材料及びパターン形成方法 |
US6372838B1 (en) * | 2000-06-28 | 2002-04-16 | 3M Innovative Properties Company | Fine latex and seed method of making |
US7211214B2 (en) * | 2000-07-18 | 2007-05-01 | Princeton University | Laser assisted direct imprint lithography |
US6448301B1 (en) * | 2000-09-08 | 2002-09-10 | 3M Innovative Properties Company | Crosslinkable polymeric compositions and use thereof |
US20020126189A1 (en) * | 2000-09-21 | 2002-09-12 | Gloster Daniel F. | Systems and methods for lithography |
KR101031528B1 (ko) * | 2000-10-12 | 2011-04-27 | 더 보드 오브 리전츠 오브 더 유니버시티 오브 텍사스 시스템 | 실온 저압 마이크로- 및 나노- 임프린트 리소그래피용템플릿 |
US6503914B1 (en) | 2000-10-23 | 2003-01-07 | Board Of Regents, The University Of Texas System | Thienopyrimidine-based inhibitors of the Src family |
JP3897572B2 (ja) * | 2001-11-08 | 2007-03-28 | 孝志 澤口 | パーフルオロアルキル基を有する両親媒性物質 |
DE10062203A1 (de) * | 2000-12-13 | 2002-06-20 | Creavis Tech & Innovation Gmbh | Verfahren zur Abformung von hydrophoben Polymeren zur Erzeugung von Oberflächen mit beständig wasser- und ölabweisenden Eigenschaften |
KR20020047490A (ko) * | 2000-12-13 | 2002-06-22 | 윤종용 | 실리콘을 함유하는 감광성 폴리머 및 이를 포함하는레지스트 조성물 |
US6783719B2 (en) * | 2001-01-19 | 2004-08-31 | Korry Electronics, Co. | Mold with metal oxide surface compatible with ionic release agents |
KR100442859B1 (ko) * | 2001-04-04 | 2004-08-02 | 삼성전자주식회사 | 실리콘을 함유하는 알킬 비닐 에테르의 중합체로이루어지는 감광성 폴리머 및 이를 포함하는 레지스트조성물 |
US6737489B2 (en) * | 2001-05-21 | 2004-05-18 | 3M Innovative Properties Company | Polymers containing perfluorovinyl ethers and applications for such polymers |
US7037574B2 (en) * | 2001-05-23 | 2006-05-02 | Veeco Instruments, Inc. | Atomic layer deposition for fabricating thin films |
US6736857B2 (en) * | 2001-05-25 | 2004-05-18 | 3M Innovative Properties Company | Method for imparting soil and stain resistance to carpet |
US6721529B2 (en) * | 2001-09-21 | 2004-04-13 | Nexpress Solutions Llc | Release agent donor member having fluorocarbon thermoplastic random copolymer overcoat |
US6790905B2 (en) * | 2001-10-09 | 2004-09-14 | E. I. Du Pont De Nemours And Company | Highly repellent carpet protectants |
US6649272B2 (en) * | 2001-11-08 | 2003-11-18 | 3M Innovative Properties Company | Coating composition comprising fluorochemical polyether silane polycondensate and use thereof |
US7455955B2 (en) | 2002-02-27 | 2008-11-25 | Brewer Science Inc. | Planarization method for multi-layer lithography processing |
US7060774B2 (en) * | 2002-02-28 | 2006-06-13 | Merck Patent Gesellschaft | Prepolymer material, polymer material, imprinting process and their use |
EP1342736B1 (en) | 2002-02-28 | 2013-05-08 | Merck Patent GmbH | Prepolymer material, polymer material, imprinting process and their Use |
US6932934B2 (en) * | 2002-07-11 | 2005-08-23 | Molecular Imprints, Inc. | Formation of discontinuous films during an imprint lithography process |
US7077992B2 (en) * | 2002-07-11 | 2006-07-18 | Molecular Imprints, Inc. | Step and repeat imprint lithography processes |
US6900881B2 (en) * | 2002-07-11 | 2005-05-31 | Molecular Imprints, Inc. | Step and repeat imprint lithography systems |
US6957608B1 (en) * | 2002-08-02 | 2005-10-25 | Kovio, Inc. | Contact print methods |
US6936194B2 (en) * | 2002-09-05 | 2005-08-30 | Molecular Imprints, Inc. | Functional patterning material for imprint lithography processes |
US20040065252A1 (en) * | 2002-10-04 | 2004-04-08 | Sreenivasan Sidlgata V. | Method of forming a layer on a substrate to facilitate fabrication of metrology standards |
US8349241B2 (en) * | 2002-10-04 | 2013-01-08 | Molecular Imprints, Inc. | Method to arrange features on a substrate to replicate features having minimal dimensional variability |
US7365103B2 (en) * | 2002-12-12 | 2008-04-29 | Board Of Regents, The University Of Texas System | Compositions for dark-field polymerization and method of using the same for imprint lithography processes |
US20040168613A1 (en) * | 2003-02-27 | 2004-09-02 | Molecular Imprints, Inc. | Composition and method to form a release layer |
US6830819B2 (en) * | 2003-03-18 | 2004-12-14 | Xerox Corporation | Fluorosilicone release agent for fluoroelastomer fuser members |
US7179396B2 (en) * | 2003-03-25 | 2007-02-20 | Molecular Imprints, Inc. | Positive tone bi-layer imprint lithography method |
US7122079B2 (en) * | 2004-02-27 | 2006-10-17 | Molecular Imprints, Inc. | Composition for an etching mask comprising a silicon-containing material |
US7396475B2 (en) * | 2003-04-25 | 2008-07-08 | Molecular Imprints, Inc. | Method of forming stepped structures employing imprint lithography |
US7307118B2 (en) * | 2004-11-24 | 2007-12-11 | Molecular Imprints, Inc. | Composition to reduce adhesion between a conformable region and a mold |
US7157036B2 (en) * | 2003-06-17 | 2007-01-02 | Molecular Imprints, Inc | Method to reduce adhesion between a conformable region and a pattern of a mold |
US20050160934A1 (en) * | 2004-01-23 | 2005-07-28 | Molecular Imprints, Inc. | Materials and methods for imprint lithography |
US20060108710A1 (en) * | 2004-11-24 | 2006-05-25 | Molecular Imprints, Inc. | Method to reduce adhesion between a conformable region and a mold |
JP2005014348A (ja) | 2003-06-25 | 2005-01-20 | Fuji Photo Film Co Ltd | 平版印刷版原版及び平版印刷方法 |
US8076386B2 (en) | 2004-02-23 | 2011-12-13 | Molecular Imprints, Inc. | Materials for imprint lithography |
US7282550B2 (en) * | 2004-08-16 | 2007-10-16 | Molecular Imprints, Inc. | Composition to provide a layer with uniform etch characteristics |
US7939131B2 (en) * | 2004-08-16 | 2011-05-10 | Molecular Imprints, Inc. | Method to provide a layer with uniform etch characteristics |
US20060062922A1 (en) * | 2004-09-23 | 2006-03-23 | Molecular Imprints, Inc. | Polymerization technique to attenuate oxygen inhibition of solidification of liquids and composition therefor |
US20060081557A1 (en) * | 2004-10-18 | 2006-04-20 | Molecular Imprints, Inc. | Low-k dielectric functional imprinting materials |
US20060145398A1 (en) * | 2004-12-30 | 2006-07-06 | Board Of Regents, The University Of Texas System | Release layer comprising diamond-like carbon (DLC) or doped DLC with tunable composition for imprint lithography templates and contact masks |
US7759407B2 (en) * | 2005-07-22 | 2010-07-20 | Molecular Imprints, Inc. | Composition for adhering materials together |
US8557351B2 (en) * | 2005-07-22 | 2013-10-15 | Molecular Imprints, Inc. | Method for adhering materials together |
US20090304992A1 (en) | 2005-08-08 | 2009-12-10 | Desimone Joseph M | Micro and Nano-Structure Metrology |
US8142703B2 (en) * | 2005-10-05 | 2012-03-27 | Molecular Imprints, Inc. | Imprint lithography method |
GB2432836A (en) * | 2005-12-01 | 2007-06-06 | 3M Innovative Properties Co | Fluorinated surfactant |
US20080000373A1 (en) * | 2006-06-30 | 2008-01-03 | Maria Petrucci-Samija | Printing form precursor and process for preparing a stamp from the precursor |
JP5055880B2 (ja) * | 2006-08-02 | 2012-10-24 | 凸版印刷株式会社 | インプリント用モールド製造方法 |
US20080110557A1 (en) * | 2006-11-15 | 2008-05-15 | Molecular Imprints, Inc. | Methods and Compositions for Providing Preferential Adhesion and Release of Adjacent Surfaces |
JP4999069B2 (ja) * | 2007-01-23 | 2012-08-15 | 株式会社日立製作所 | ナノインプリント用スタンパ、ナノインプリント用スタンパの製造方法、およびナノインプリント用スタンパの表面処理剤 |
JP2008254208A (ja) * | 2007-03-30 | 2008-10-23 | Fujifilm Corp | インプリント用モールド構造体及び該インプリント用モールド構造体を用いて製造した磁気記録媒体 |
US20100109195A1 (en) | 2008-11-05 | 2010-05-06 | Molecular Imprints, Inc. | Release agent partition control in imprint lithography |
JP4711011B2 (ja) * | 2009-09-11 | 2011-06-29 | ユニマテック株式会社 | ポリフルオロアルキルホスホン酸オキシアルキレンエステルおよびその製造法 |
JP2011062984A (ja) * | 2009-09-18 | 2011-03-31 | Fujifilm Corp | 離型剤組成物、及びモールド |
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- 2009-11-05 WO PCT/US2009/005990 patent/WO2010053558A2/en active Application Filing
- 2009-11-05 KR KR1020117012894A patent/KR101732526B1/ko active IP Right Grant
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US20110319516A1 (en) | 2011-12-29 |
JP2015092583A (ja) | 2015-05-14 |
KR20110089337A (ko) | 2011-08-05 |
KR101732526B1 (ko) | 2017-05-04 |
WO2010053558A3 (en) | 2010-11-04 |
WO2010053558A2 (en) | 2010-05-14 |
JP5889388B2 (ja) | 2016-03-22 |
US20100109195A1 (en) | 2010-05-06 |
TWI429524B (zh) | 2014-03-11 |
JP2012507883A (ja) | 2012-03-29 |
TW201028272A (en) | 2010-08-01 |
US8637587B2 (en) | 2014-01-28 |
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