JP5708550B2 - 炭化珪素半導体装置およびその製造方法 - Google Patents

炭化珪素半導体装置およびその製造方法 Download PDF

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JP5708550B2
JP5708550B2 JP2012084901A JP2012084901A JP5708550B2 JP 5708550 B2 JP5708550 B2 JP 5708550B2 JP 2012084901 A JP2012084901 A JP 2012084901A JP 2012084901 A JP2012084901 A JP 2012084901A JP 5708550 B2 JP5708550 B2 JP 5708550B2
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metal
layer
electrode
semiconductor substrate
silicon carbide
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JP2013214657A (ja
JP2013214657A5 (enExample
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潤 河合
潤 河合
戸倉　規仁
規仁 戸倉
杉浦　和彦
和彦 杉浦
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Denso Corp
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Denso Corp
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Priority to JP2012084901A priority Critical patent/JP5708550B2/ja
Priority to US13/855,072 priority patent/US8941122B2/en
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Publication of JP2013214657A5 publication Critical patent/JP2013214657A5/ja
Priority to US14/547,698 priority patent/US9263267B2/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
    • H01L21/048—Making electrodes
    • H01L21/0485—Ohmic electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
    • H01L21/0455—Making n or p doped regions or layers, e.g. using diffusion
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/63—Vertical IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/01—Manufacture or treatment
    • H10D12/031—Manufacture or treatment of IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/028—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs
    • H10D30/0291—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Electrodes Of Semiconductors (AREA)
JP2012084901A 2012-04-03 2012-04-03 炭化珪素半導体装置およびその製造方法 Active JP5708550B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2012084901A JP5708550B2 (ja) 2012-04-03 2012-04-03 炭化珪素半導体装置およびその製造方法
US13/855,072 US8941122B2 (en) 2012-04-03 2013-04-02 Silicon carbide semiconductor device and method of manufacturing the same
US14/547,698 US9263267B2 (en) 2012-04-03 2014-11-19 Silicon carbide semiconductor device and method of manufacturing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012084901A JP5708550B2 (ja) 2012-04-03 2012-04-03 炭化珪素半導体装置およびその製造方法

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JP2013214657A JP2013214657A (ja) 2013-10-17
JP2013214657A5 JP2013214657A5 (enExample) 2013-11-28
JP5708550B2 true JP5708550B2 (ja) 2015-04-30

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JP (1) JP5708550B2 (enExample)

Families Citing this family (14)

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Publication number Priority date Publication date Assignee Title
DE112013002518B4 (de) * 2012-05-15 2018-01-11 Mitsubishi Electric Corporation Halbleiterbauteil und Verfahren zu dessen Herstellung
JP5802333B2 (ja) * 2013-06-14 2015-10-28 新電元工業株式会社 半導体装置の製造方法および半導体装置
WO2015122065A1 (ja) * 2014-02-13 2015-08-20 三菱電機株式会社 炭化珪素半導体装置およびその製造方法
WO2016075242A1 (en) * 2014-11-13 2016-05-19 Abb Technology Ag Method for manufacturing a power semiconductor device
US9659775B2 (en) 2015-02-25 2017-05-23 Fuji Electric Co., Ltd. Method for doping impurities, method for manufacturing semiconductor device
JP6592950B2 (ja) 2015-04-24 2019-10-23 富士電機株式会社 炭化ケイ素半導体装置の製造方法
CN107637184B (zh) * 2015-06-04 2020-07-17 住友电气工业株式会社 印刷线路板用基板和印刷线路板
CN110476223B (zh) * 2017-04-04 2023-05-30 三菱电机株式会社 碳化硅外延晶片的制造方法及碳化硅半导体装置的制造方法
US10811494B2 (en) 2017-11-07 2020-10-20 Microsemi Corporation Method and assembly for mitigating short channel effects in silicon carbide MOSFET devices
US10665680B2 (en) 2017-11-21 2020-05-26 Microsemi Corporation Method and assembly for ohmic contact in thinned silicon carbide devices
CN111247626B (zh) * 2017-12-21 2024-07-16 极光先进雷射株式会社 激光照射方法和激光照射系统
JP7024433B2 (ja) 2018-01-19 2022-02-24 富士電機株式会社 不純物導入装置、不純物導入方法及び炭化ケイ素半導体装置の製造方法
JP7135839B2 (ja) * 2018-02-19 2022-09-13 株式会社デンソー 炭化珪素半導体装置およびその製造方法
US11189493B2 (en) * 2018-02-19 2021-11-30 Denso Corporation Silicon carbide semiconductor device and method for manufacturing the same

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08139053A (ja) * 1994-11-04 1996-05-31 New Japan Radio Co Ltd ＳｉＣへの電極の形成方法
JP3315541B2 (ja) * 1994-11-04 2002-08-19 新日本無線株式会社 ＳｉＣへの電極の形成方法
JP3953696B2 (ja) * 1999-12-24 2007-08-08 新日本無線株式会社 半導体装置の製造方法
US6784486B2 (en) * 2000-06-23 2004-08-31 Silicon Semiconductor Corporation Vertical power devices having retrograded-doped transition regions therein
JP3820424B2 (ja) 2001-03-27 2006-09-13 独立行政法人産業技術総合研究所 不純物イオン注入層の活性化法
US6649973B2 (en) * 2001-03-28 2003-11-18 Rohm Co., Ltd. Semiconductor device and method for manufacturing the same
JP4865166B2 (ja) * 2001-08-30 2012-02-01 新電元工業株式会社 トランジスタの製造方法、ダイオードの製造方法
JP2004158702A (ja) 2002-11-07 2004-06-03 C Tekku:Kk 半導体装置製造方法
JP5046464B2 (ja) * 2002-12-18 2012-10-10 株式会社半導体エネルギー研究所 半導体記憶素子の作製方法
US6815323B1 (en) * 2003-01-10 2004-11-09 The United States Of America As Represented By The Secretary Of The Air Force Ohmic contacts on n-type silicon carbide using carbon films
US7227172B2 (en) * 2003-10-20 2007-06-05 Matsushita Electric Industrial Co., Ltd. Group-III-element nitride crystal semiconductor device
JP2006073923A (ja) * 2004-09-06 2006-03-16 Shindengen Electric Mfg Co Ltd ＳｉＣ半導体装置およびＳｉＣ半導体装置の製造方法
JP2006210569A (ja) * 2005-01-27 2006-08-10 Shindengen Electric Mfg Co Ltd 半導体装置および半導体装置の製造方法
KR20130086057A (ko) * 2005-09-16 2013-07-30 크리 인코포레이티드 실리콘 카바이드 전력 소자들을 그 상에 가지는 반도체 웨이퍼들의 가공방법들
JP2008135611A (ja) 2006-11-29 2008-06-12 Denso Corp 半導体装置の製造方法
JP5315058B2 (ja) * 2006-12-07 2013-10-16 新電元工業株式会社 半導体装置及びその製造方法
JP2008305998A (ja) * 2007-06-07 2008-12-18 Fuji Electric Device Technology Co Ltd 半導体装置
US8394711B2 (en) * 2009-02-12 2013-03-12 The Curators Of The University Of Missouri Systems and methods for co-doping wide band gap materials
JP5471190B2 (ja) 2009-09-02 2014-04-16 トヨタ自動車株式会社 半導体素子、半導体モジュール及びそれらの製造方法
JP5639926B2 (ja) * 2011-02-28 2014-12-10 株式会社日立製作所 炭化珪素半導体装置及びその製造方法

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Publication number Publication date
US20130285070A1 (en) 2013-10-31
JP2013214657A (ja) 2013-10-17
US20150079781A1 (en) 2015-03-19
US8941122B2 (en) 2015-01-27
US9263267B2 (en) 2016-02-16

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