JP5693852B2 - 電流低減構造体を有する発光デバイス及び電流低減構造体を有する発光デバイスを形成する方法 - Google Patents

電流低減構造体を有する発光デバイス及び電流低減構造体を有する発光デバイスを形成する方法 Download PDF

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JP5693852B2
JP5693852B2 JP2009552684A JP2009552684A JP5693852B2 JP 5693852 B2 JP5693852 B2 JP 5693852B2 JP 2009552684 A JP2009552684 A JP 2009552684A JP 2009552684 A JP2009552684 A JP 2009552684A JP 5693852 B2 JP5693852 B2 JP 5693852B2
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type semiconductor
semiconductor layer
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light emitting
emitting device
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JP2010520640A5 (enExample
JP2010520640A (ja
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トッド エマーソン デイビッド
トッド エマーソン デイビッド
ハバラン ケビン
ハバラン ケビン
ジョン バーグマン マイケル
ジョン バーグマン マイケル
スレーター デイビッド
スレーター デイビッド
ドノフリオ マシュー
ドノフリオ マシュー
エドモンド ジョン
エドモンド ジョン
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Wolfspeed Inc
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Cree Inc
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/816—Bodies having carrier transport control structures, e.g. highly-doped semiconductor layers or current-blocking structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/816—Bodies having carrier transport control structures, e.g. highly-doped semiconductor layers or current-blocking structures
    • H10H20/8162—Current-blocking structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/49105—Connecting at different heights
    • H01L2224/49107—Connecting at different heights on the semiconductor or solid-state body
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/032—Manufacture or treatment of electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)
JP2009552684A 2007-03-08 2008-02-19 電流低減構造体を有する発光デバイス及び電流低減構造体を有する発光デバイスを形成する方法 Active JP5693852B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/715,687 US7795623B2 (en) 2004-06-30 2007-03-08 Light emitting devices having current reducing structures and methods of forming light emitting devices having current reducing structures
US11/715,687 2007-03-08
PCT/US2008/002140 WO2008112064A2 (en) 2007-03-08 2008-02-19 Light emitting devices having current reducing structures and methods of forming light emitting devices having current reducing structures

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JP2010520640A JP2010520640A (ja) 2010-06-10
JP2010520640A5 JP2010520640A5 (enExample) 2012-02-16
JP5693852B2 true JP5693852B2 (ja) 2015-04-01

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US (4) US7795623B2 (enExample)
EP (2) EP3264475B1 (enExample)
JP (1) JP5693852B2 (enExample)
KR (3) KR20140103337A (enExample)
CN (2) CN101681961A (enExample)
WO (1) WO2008112064A2 (enExample)

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