JP5684877B2 - 裏面照射型イメージセンサ - Google Patents
裏面照射型イメージセンサ Download PDFInfo
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- JP5684877B2 JP5684877B2 JP2013211704A JP2013211704A JP5684877B2 JP 5684877 B2 JP5684877 B2 JP 5684877B2 JP 2013211704 A JP2013211704 A JP 2013211704A JP 2013211704 A JP2013211704 A JP 2013211704A JP 5684877 B2 JP5684877 B2 JP 5684877B2
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- 239000010410 layer Substances 0.000 claims description 326
- 239000000758 substrate Substances 0.000 claims description 93
- 238000000034 method Methods 0.000 claims description 84
- 239000011241 protective layer Substances 0.000 claims description 48
- 239000011229 interlayer Substances 0.000 claims description 28
- 238000004519 manufacturing process Methods 0.000 claims description 16
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 10
- 229920005591 polysilicon Polymers 0.000 claims description 10
- 239000000463 material Substances 0.000 claims description 9
- 239000012535 impurity Substances 0.000 claims description 7
- 229910000510 noble metal Inorganic materials 0.000 claims description 6
- 229910052719 titanium Inorganic materials 0.000 claims description 6
- 229910052721 tungsten Inorganic materials 0.000 claims description 5
- 229910052804 chromium Inorganic materials 0.000 claims description 3
- 229910052744 lithium Inorganic materials 0.000 claims description 3
- 229910052749 magnesium Inorganic materials 0.000 claims description 3
- 229910052750 molybdenum Inorganic materials 0.000 claims description 3
- 230000000149 penetrating effect Effects 0.000 claims description 3
- 229910052726 zirconium Inorganic materials 0.000 claims description 2
- 230000008569 process Effects 0.000 description 46
- 239000004065 semiconductor Substances 0.000 description 33
- 229910052751 metal Inorganic materials 0.000 description 19
- 239000002184 metal Substances 0.000 description 19
- 229910052581 Si3N4 Inorganic materials 0.000 description 15
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical group N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 14
- 238000005530 etching Methods 0.000 description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 12
- 150000004767 nitrides Chemical class 0.000 description 12
- 229910052814 silicon oxide Inorganic materials 0.000 description 12
- 239000004020 conductor Substances 0.000 description 11
- 229910052710 silicon Inorganic materials 0.000 description 10
- 239000010703 silicon Substances 0.000 description 10
- 239000010936 titanium Substances 0.000 description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 9
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 9
- 230000004888 barrier function Effects 0.000 description 7
- 238000005229 chemical vapour deposition Methods 0.000 description 7
- 239000010949 copper Substances 0.000 description 6
- 125000006850 spacer group Chemical group 0.000 description 6
- 238000007517 polishing process Methods 0.000 description 5
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 4
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 4
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 4
- 239000000956 alloy Substances 0.000 description 4
- 239000005388 borosilicate glass Substances 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- 238000005498 polishing Methods 0.000 description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 238000000231 atomic layer deposition Methods 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 239000011651 chromium Substances 0.000 description 3
- 229910017052 cobalt Inorganic materials 0.000 description 3
- 239000010941 cobalt Substances 0.000 description 3
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 238000001312 dry etching Methods 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 238000005286 illumination Methods 0.000 description 3
- 238000011065 in-situ storage Methods 0.000 description 3
- 239000011777 magnesium Substances 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 238000012858 packaging process Methods 0.000 description 3
- 229910052697 platinum Inorganic materials 0.000 description 3
- 239000005368 silicate glass Substances 0.000 description 3
- -1 silicon nitride compound Chemical class 0.000 description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 3
- 239000010937 tungsten Substances 0.000 description 3
- 238000001039 wet etching Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 229910052582 BN Inorganic materials 0.000 description 2
- XPDWGBQVDMORPB-UHFFFAOYSA-N Fluoroform Chemical compound FC(F)F XPDWGBQVDMORPB-UHFFFAOYSA-N 0.000 description 2
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 2
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 238000005137 deposition process Methods 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 230000001066 destructive effect Effects 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 239000011368 organic material Substances 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 230000002829 reductive effect Effects 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 239000011787 zinc oxide Substances 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- QYEXBYZXHDUPRC-UHFFFAOYSA-N B#[Ti]#B Chemical compound B#[Ti]#B QYEXBYZXHDUPRC-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 1
- 229910018503 SF6 Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910033181 TiB2 Inorganic materials 0.000 description 1
- AXQKVSDUCKWEKE-UHFFFAOYSA-N [C].[Ge].[Si] Chemical compound [C].[Ge].[Si] AXQKVSDUCKWEKE-UHFFFAOYSA-N 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- UQZIWOQVLUASCR-UHFFFAOYSA-N alumane;titanium Chemical compound [AlH3].[Ti] UQZIWOQVLUASCR-UHFFFAOYSA-N 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000003667 anti-reflective effect Effects 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000007767 bonding agent Substances 0.000 description 1
- QDMRQDKMCNPQQH-UHFFFAOYSA-N boranylidynetitanium Chemical compound [B].[Ti] QDMRQDKMCNPQQH-UHFFFAOYSA-N 0.000 description 1
- HGHPQUIZVKPZEU-UHFFFAOYSA-N boranylidynezirconium Chemical compound [B].[Zr] HGHPQUIZVKPZEU-UHFFFAOYSA-N 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 230000000670 limiting effect Effects 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- KYKLWYKWCAYAJY-UHFFFAOYSA-N oxotin;zinc Chemical compound [Zn].[Sn]=O KYKLWYKWCAYAJY-UHFFFAOYSA-N 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 239000005360 phosphosilicate glass Substances 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 150000005837 radical ions Chemical class 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- SFZCNBIFKDRMGX-UHFFFAOYSA-N sulfur hexafluoride Chemical compound FS(F)(F)(F)(F)F SFZCNBIFKDRMGX-UHFFFAOYSA-N 0.000 description 1
- 229960000909 sulfur hexafluoride Drugs 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000005019 vapor deposition process Methods 0.000 description 1
- 238000009279 wet oxidation reaction Methods 0.000 description 1
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- H01L27/144—Devices controlled by radiation
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- H01L27/1464—Back illuminated imager structures
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76898—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics formed through a semiconductor substrate
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- H01L23/481—Internal lead connections, e.g. via connections, feedthrough structures
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- H01L27/144—Devices controlled by radiation
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- H01L27/1462—Coatings
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- H01L27/144—Devices controlled by radiation
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- H01L27/144—Devices controlled by radiation
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- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
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- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14698—Post-treatment for the devices, e.g. annealing, impurity-gettering, shor-circuit elimination, recrystallisation
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- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electromagnetism (AREA)
- Manufacturing & Machinery (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Light Receiving Elements (AREA)
Description
は、一般に、受光素子と、ディジタル制御ブロックと、アナログ・ディジタル変換器といった周辺回路とが1つのチップ内の限られた領域に配置される。これにより、チップ面積に対するピクセルアレイの面積の割合は約40%に限られることになる。また、高品質画像を実現するためにピクセルサイズは大幅に縮小されるため、1つの受光素子が収集できる光の量が減り、ノイズが増え、ノイズ増加に起因する画像欠陥などの種々の問題が生まれる。
ができる。また、第2の半導体パターン100−3Aは、SOI基板上に配置されたエピタキシャル層であり得る。この実施形態における基板は、SOI基板における埋込み絶縁層上に形成されたSOI基板である。
を有している。この材料の屈折率は、隣接する2つの媒体の幾何平均に近い。この場合、これら2つの媒体の界面上には同じ程度の2つの反射が生まれ、続いて両者の相殺的干渉によって除去される。
うに形成されている。第1の絶縁層は、第2の絶縁層より低く、第2の半導体パターン100−3Aより低い屈折率を有する材料を含んでいる。好適には、第1の絶縁層が酸化物層を含み、さらに好適には第1の絶縁層が酸化ケイ素層を含む。この酸化ケイ素層は、天然酸化ケイ素層と、成長酸化ケイ素層と、蒸着酸化ケイ素層とからなるグループから選択された1つの層とすることができる。ここで、酸化ケイ素層は約2nmから約50nmの厚みを有するように形成される。
んでいる。透明導電層126は、インジウム錫酸化物(ITO)層と、(ZnO、ZOを含む)酸化亜鉛層と、(SnO、TOを含む)酸化錫層と、亜鉛錫酸化物(ZTO)層とからなるグループから選択された1つの層を含み得る。ITO層には、コバルト(CO)と、チタン(Ti)と、タングステン(W)と、モリブデン(Mo)と、クロム(Cr)とからなるグループから選択された1つをドープすることができる。ZO層には、マグネシウム(Mg)と、ジルコニウム(Zr)と、リチウム(Li)とからなるグループから選択された1つがドープされている。TCO層は約10nmから約500nmの厚みを有するように形成されている。透明導電層126は、ポリシリコン層または金属層を含むことができる。ポリシリコン層及び金属層は、入射光を第2の半導体パターン100−3Aに送り込むために薄い厚みとなるように形成される。例えば、ポリシリコン層は、約40nm以下の厚みを有するように形成される。好適には、ポリシリコン層は、約1nmから約40nmの厚みを有するように形成される。金属層は貴金属を含む。例えばこの貴金属は金(Au)または白金(Pt)を含む。貴金属層は、約1nm以下の厚みを有するように形成される。貴金属層は、約0.1nmから約1nmの厚みを有するように形成することができる。
縁パターン108A上に形成された第1から第4の相互接続層113、116、119、122であって、第1から第4の相互接続層113、116、119、122のうちの第1の相互接続層113の裏面が位置決めキー112に接続されている第1から第4の相互接続層113、116、119、122と、相互接続層113、116、119、122を覆っている保護層124と、第1の基板の裏面上に配置された裏面保護層125と、位
置決めキー112に接続されるように第1の基板の裏面上に形成された透明導電層126と、透明導電層126上に配置された受光素子106とオーバーラップしているカラーフィルタ128及びマイクロレンズ130とを有している。
結合の減少は量子効率を増加させ、表面創成の減少は暗電流の漏洩を減少させる。
リコン局所酸化(LOCal Oxidation of Silicon)(LOCOS)プロセスにより形成すること
ができるが、絶縁層101は図2Aに示したように高集積密度の実現に有利なSTIプロセスをにより形成することが好ましい。STIプロセスが実行される場合には、絶縁層101は、高いアスペクト比のための優れた充填特性(filling characteristic)を有する高密度プラズマ(HDP)層、あるいはHDP層とスピン・オン・インシュレーション(spin on insulation)(SOD)層との積層構造を含み得る。
成することができる。
極104の両側面に露出するように第1の基板100に形成される。
1つの層を含み得る。更に、第1の層間絶縁層108は、スピン・コーティング・プロセスによって堆積したスピン・オン・ダイエレクトリック(Spin On Dielectric)(SOD)層といった層を含み得る。
の内面には障壁層(図示せず)を形成することができる。この障壁層は、チタン(Ti)層と、窒化チタン(TiN)層と、タンタル(Ta)層と、窒化タンタル(TaN)層と、アルミニウム・ケイ素・チタン窒化物(AlSiTiN)層と、ニッケル・チタン(NiTi)層と、チタン・ホウ素窒化物(TiBN)層と、ジルコニウム・ホウ素窒化物(ZrBN)層と、チタン・アルミニウム窒化物(TiAlN)層と、二ホウ化チタン(TiB2)層と、これらの積層構造、例えばTi層またはTiN層とTa層またはTaN層との積層構造とからなるグループから選択された1つの層を含むことができる。コンタクトホール109、特にビアホール110の幅の減少を最小にするために、障壁層が、優れたステップカバレージ(step coverage)を有する原子層堆積(atomic layer deposition, ALD)プロセスを使用して、100Å未満、好適には約50Åから約100Åの厚みに
なるように形成される。更に障壁層は、金属有機化学蒸着(metal organic chemical vapor deposition, MOCVD)プロセスまたは物理蒸着(physical vapor deposition, PVD)プロセスによって形成することができる。
0の幅の減少が最小となる。
1は、ダマシン(damascene)プロセスにより第2から第5の層間絶縁層114、117
、120、123内に形成される。垂直に積み重ねられた第1から第4の相互接続層113、116、119、122を電気的に接続するために、第2から第4のコンタクトプラグ115、118、121が、導電性材料、例えば不純物がドープされたポリシリコン及び金属、または少なくとも2つの金属を含有する合金から形成される。好適には、第2から第4のコンタクトプラグ115、118、121はタングステン(W)から形成される。第2から第5の層間絶縁層114、117、120,123は、BPSG層と、PSG層と、BSG層と、USG層と、TEOS層と、HDP層と、これらの積層構造とからなるグループから選択された酸化物層を含み得る。更に、第2から第4の層間絶縁層114、117、120はCMPプロセスを使用して平坦にすることができる。
、炉を使用した焼きなましプロセスにより実行され得る。
るために裏面研磨処理が行われる。この場合、埋込み絶縁パターン100−2Aを貫通するように位置決めキー112が形成されている場合には、埋込み絶縁パターン100−2Aが露出するまで裏面研磨処理を行うことにより位置決めキー112が露出する。この処理時に、埋込み絶縁パターン100−2Aは所定の厚さだけ除去され得る。一方で、位置決めキー112が埋込み絶縁パターン100−2Aを貫通しないように形成されている場合、すなわち位置決めキー112が所定の深さにわたり埋込み絶縁パターン100−2A
の内部に延びている場合には、埋込み絶縁パターン100−2Aは位置決めキー112が露出するように部分的に、または完全に除去され得る。あるいは、埋込み絶縁パターン100−2Aは別のエッチング処理によりエッチングすることもできる。
る。金属層は金(Au)または白金(Pt)とすることができる。金属層は約0.1nmから約1nmの厚みとなるように形成される。
27を形成することができる。第1の平坦化層127は有機材料から形成できる。
Claims (17)
- 基板内に受光素子を形成するステップと、
前記基板上にパターン化された導電層を形成するステップであって、前記パターン化された導電層が、相互接続層及び層間絶縁層を含むものである、ステップと、
前記受光素子から間隔を置いて配置され前記層間絶縁層及び前記基板を貫通している位置決めキーを形成するステップであって、前記位置決めキーが、前記パターン化された導電層と電気的に接続しているものである、ステップと、
前記基板上に裏面保護層を形成するステップと、
前記受光素子に対向する領域を含む前記裏面保護層上に透明導電層を形成するステップであって、前記透明導電層が、前記位置決めキーと電気的に接続しているものである、ステップと
を含んでなる、裏面照射型イメージセンサを製造する方法。 - 請求項1に記載の方法であって、さらに、
前記受光素子に対向する領域を含む前記透明導電層上にカラーフィルタ及びマイクロレンズの両者を形成するステップ
を含んでなる方法。 - 請求項1に記載の方法であって、さらに、
前記パターン化された導電層の前面上に前面保護層を形成するステップと、
前記前面保護層上にさらなる基板を形成するステップと
を含んでなる方法。 - 請求項3に記載の方法において、
前記前面保護層上にさらなる基板を形成するステップが、前記前面保護層上にSOI基板をボンドするステップを含むものである
ことを特徴とする方法。 - 請求項1に記載の方法において、
前記裏面保護層を形成するステップが、異なる屈折率の複数の層を含む多層構造を有する裏面保護層を形成するステップを含むものである
ことを特徴とする方法。 - 請求項1に記載の方法において、
前記裏面保護層を形成するステップが、前記基板より低い屈折率の層を含む裏面保護層を形成するステップを含むものである
ことを特徴とする方法。 - 請求項1に記載の方法において、
前記透明導電層を形成するステップが、ITOと、ZOと、SnOと、ZTOとからなるグループから選択された材料により透明導電層を形成するステップを含むものである
ことを特徴とする方法。 - 請求項7に記載の方法において、
前記透明導電層を形成するステップが、ITO層を含む透明導電層を形成するステップを含むものであり、
この方法が、さらに、CoとTiとWとMoとCrとからなる不純物のグループから選択された不純物を前記ITO層にドープするステップを含んでなる
ことを特徴とする方法。 - 請求項7に記載の方法において、
前記透明導電層を形成するステップが、ZO層を含む透明導電層を形成するステップを含むものであり、
この方法が、さらに、MgとZrとLiとからなる不純物のグループから選択された不純物を前記ZO層にドープするステップを含んでなる
ことを特徴とする方法。 - 請求項1に記載の方法において、
前記透明導電層を形成するステップが、ポリシリコン層か、貴金属層か、ポリシリコン層及び貴金属層かを含む透明導電層を形成するステップを含むものである
ことを特徴とする方法。 - 基板内に受光素子を形成するステップと、
複数の相互接続層と複数の層間絶縁層とを有するパターン化された導電層構造を前記基板上に形成するステップと、
前記受光素子から横方向に間隔を置いて配置され前記層間絶縁層及び前記基板を貫通している位置決めキーを形成するステップであって、前記位置決めキーが前記複数の相互接続層の少なくとも1つと電気的に接続しているものである、ステップと、
前記複数の相互接続層の前記少なくとも1つに電圧印加ユニットを電気的に接続するステップと、
前記基板上に裏面保護層を形成するステップと、
前記受光素子に対向する領域を含む前記裏面保護層上に透明導電層を形成するステップであって、前記透明導電層が、前記位置決めキーと前記複数の相互接続層の前記少なくとも1つとを通して前記電圧印加ユニットに電気的に接続されている、ステップと
を含んでなる、裏面照射型イメージセンサを製造する方法。 - 請求項11に記載の方法において、
前記電圧印加ユニットが、前記複数の相互接続層の前記少なくとも1つに接続された負電圧出力を有するものである
ことを特徴とする方法。 - 請求項11に記載の方法において、
前記電圧印加ユニットが、前記複数の相互接続層の前記少なくとも1つに接続された正電圧出力を有するものである
ことを特徴とする方法。 - 請求項11に記載の方法において、
前記裏面保護層を形成するステップが、異なる屈折率の複数の層を含む多層構造を形成するステップを含むものである
ことを特徴とする方法。 - 請求項11に記載の方法において、
前記裏面保護層を形成するステップが、前記基板より低い屈折率の層を含む裏面保護層を形成するステップを含むものである
ことを特徴とする方法。 - 請求項11に記載の方法にであって、さらに、
前記パターン化された導電層構造の前面上に前面保護層を形成するステップ
を含んでなる方法。 - 請求項11に記載の方法において、
前記裏面保護層を形成するステップが、裏面保護層を反射防止層として形成するものである
ことを特徴とする方法。
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- 2009-10-21 KR KR1020117011521A patent/KR101266414B1/ko active IP Right Grant
- 2009-10-21 WO PCT/US2009/061488 patent/WO2010048291A1/en active Application Filing
- 2009-10-21 JP JP2011532348A patent/JP5458103B2/ja active Active
- 2009-10-21 CN CN201310245920.5A patent/CN103400844B/zh not_active Expired - Fee Related
- 2009-10-21 EP EP12194890A patent/EP2565926A1/en not_active Withdrawn
- 2009-10-21 KR KR1020137013574A patent/KR101373233B1/ko active IP Right Grant
- 2009-10-21 KR KR1020137029880A patent/KR101448284B1/ko active IP Right Grant
- 2009-10-21 CN CN200980151457.XA patent/CN102257618B/zh not_active Expired - Fee Related
- 2009-10-21 KR KR1020117011701A patent/KR101339958B1/ko active IP Right Grant
- 2009-10-21 EP EP09741160.7A patent/EP2361440B1/en not_active Not-in-force
-
2010
- 2010-12-15 US US12/969,321 patent/US8420438B2/en active Active
-
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- 2012-02-06 JP JP2012023246A patent/JP5437410B2/ja not_active Expired - Fee Related
-
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- 2013-04-09 US US13/859,055 patent/US9553122B2/en active Active
- 2013-10-09 JP JP2013211704A patent/JP5684877B2/ja active Active
-
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Also Published As
Publication number | Publication date |
---|---|
CN102257618A (zh) | 2011-11-23 |
KR101266414B1 (ko) | 2013-05-22 |
US20100096718A1 (en) | 2010-04-22 |
US20130237004A1 (en) | 2013-09-12 |
EP2361440B1 (en) | 2013-11-20 |
CN102263118B (zh) | 2015-09-09 |
CN102263118A (zh) | 2011-11-30 |
KR20130131496A (ko) | 2013-12-03 |
KR20130064147A (ko) | 2013-06-17 |
CN103400844B (zh) | 2016-05-25 |
US20160071900A1 (en) | 2016-03-10 |
EP2361440A1 (en) | 2011-08-31 |
KR20110073605A (ko) | 2011-06-29 |
WO2010048291A1 (en) | 2010-04-29 |
KR20110059807A (ko) | 2011-06-03 |
JP5458103B2 (ja) | 2014-04-02 |
US9553122B2 (en) | 2017-01-24 |
JP2012506623A (ja) | 2012-03-15 |
JP2012099858A (ja) | 2012-05-24 |
EP2565926A1 (en) | 2013-03-06 |
JP5437410B2 (ja) | 2014-03-12 |
US7875948B2 (en) | 2011-01-25 |
KR101373233B1 (ko) | 2014-03-11 |
US10020338B2 (en) | 2018-07-10 |
JP2014042046A (ja) | 2014-03-06 |
US8420438B2 (en) | 2013-04-16 |
CN102257618B (zh) | 2014-06-11 |
US20110223707A1 (en) | 2011-09-15 |
KR101339958B1 (ko) | 2013-12-10 |
CN103400844A (zh) | 2013-11-20 |
KR101448284B1 (ko) | 2014-10-13 |
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