JP2012506623A - 裏面照射型イメージセンサ - Google Patents
裏面照射型イメージセンサ Download PDFInfo
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- JP2012506623A JP2012506623A JP2011532348A JP2011532348A JP2012506623A JP 2012506623 A JP2012506623 A JP 2012506623A JP 2011532348 A JP2011532348 A JP 2011532348A JP 2011532348 A JP2011532348 A JP 2011532348A JP 2012506623 A JP2012506623 A JP 2012506623A
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- 239000010410 layer Substances 0.000 claims abstract description 330
- 239000000758 substrate Substances 0.000 claims abstract description 100
- 239000011241 protective layer Substances 0.000 claims abstract description 44
- 238000005286 illumination Methods 0.000 claims abstract description 6
- 239000011229 interlayer Substances 0.000 claims description 27
- 229910052751 metal Inorganic materials 0.000 claims description 21
- 239000002184 metal Substances 0.000 claims description 21
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 14
- 239000004020 conductor Substances 0.000 claims description 14
- 150000004767 nitrides Chemical class 0.000 claims description 13
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 13
- 239000010936 titanium Substances 0.000 claims description 13
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 12
- 229920005591 polysilicon Polymers 0.000 claims description 12
- 239000000463 material Substances 0.000 claims description 10
- 229910000510 noble metal Inorganic materials 0.000 claims description 8
- 239000010931 gold Substances 0.000 claims description 7
- 229910052719 titanium Inorganic materials 0.000 claims description 7
- 239000011787 zinc oxide Substances 0.000 claims description 7
- 239000011651 chromium Substances 0.000 claims description 6
- 239000011777 magnesium Substances 0.000 claims description 6
- 229910052721 tungsten Inorganic materials 0.000 claims description 6
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 5
- 229910052697 platinum Inorganic materials 0.000 claims description 5
- 229910052804 chromium Inorganic materials 0.000 claims description 4
- 229910017052 cobalt Inorganic materials 0.000 claims description 4
- 239000010941 cobalt Substances 0.000 claims description 4
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 4
- 229910052744 lithium Inorganic materials 0.000 claims description 4
- 229910052749 magnesium Inorganic materials 0.000 claims description 4
- 229910052750 molybdenum Inorganic materials 0.000 claims description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 4
- 239000010937 tungsten Substances 0.000 claims description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 239000012212 insulator Substances 0.000 claims description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 2
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 claims description 2
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 2
- 239000011733 molybdenum Substances 0.000 claims description 2
- KYKLWYKWCAYAJY-UHFFFAOYSA-N oxotin;zinc Chemical compound [Zn].[Sn]=O KYKLWYKWCAYAJY-UHFFFAOYSA-N 0.000 claims description 2
- 230000000149 penetrating effect Effects 0.000 claims description 2
- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 claims description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 2
- 229910001887 tin oxide Inorganic materials 0.000 claims description 2
- 229910052726 zirconium Inorganic materials 0.000 claims description 2
- 238000000034 method Methods 0.000 description 61
- 230000008569 process Effects 0.000 description 46
- 239000004065 semiconductor Substances 0.000 description 33
- 229910052581 Si3N4 Inorganic materials 0.000 description 15
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical group N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 14
- 238000005530 etching Methods 0.000 description 13
- 238000004519 manufacturing process Methods 0.000 description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 12
- 229910052814 silicon oxide Inorganic materials 0.000 description 12
- 229910052710 silicon Inorganic materials 0.000 description 10
- 239000010703 silicon Substances 0.000 description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 9
- 230000004888 barrier function Effects 0.000 description 7
- 238000005229 chemical vapour deposition Methods 0.000 description 7
- 239000010949 copper Substances 0.000 description 6
- 125000006850 spacer group Chemical group 0.000 description 6
- 238000007517 polishing process Methods 0.000 description 5
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 4
- 239000000956 alloy Substances 0.000 description 4
- 239000005388 borosilicate glass Substances 0.000 description 4
- 238000005498 polishing Methods 0.000 description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 238000000231 atomic layer deposition Methods 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 238000001312 dry etching Methods 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 238000011065 in-situ storage Methods 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 238000012858 packaging process Methods 0.000 description 3
- 239000005368 silicate glass Substances 0.000 description 3
- -1 silicon nitride compound Chemical class 0.000 description 3
- 238000001039 wet etching Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 229910052582 BN Inorganic materials 0.000 description 2
- XPDWGBQVDMORPB-UHFFFAOYSA-N Fluoroform Chemical compound FC(F)F XPDWGBQVDMORPB-UHFFFAOYSA-N 0.000 description 2
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 2
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 238000005137 deposition process Methods 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 230000001066 destructive effect Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 239000011368 organic material Substances 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 230000002829 reductive effect Effects 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- QYEXBYZXHDUPRC-UHFFFAOYSA-N B#[Ti]#B Chemical compound B#[Ti]#B QYEXBYZXHDUPRC-UHFFFAOYSA-N 0.000 description 1
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 1
- 229910018503 SF6 Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910033181 TiB2 Inorganic materials 0.000 description 1
- AXQKVSDUCKWEKE-UHFFFAOYSA-N [C].[Ge].[Si] Chemical compound [C].[Ge].[Si] AXQKVSDUCKWEKE-UHFFFAOYSA-N 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- UQZIWOQVLUASCR-UHFFFAOYSA-N alumane;titanium Chemical compound [AlH3].[Ti] UQZIWOQVLUASCR-UHFFFAOYSA-N 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000003667 anti-reflective effect Effects 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000007767 bonding agent Substances 0.000 description 1
- QDMRQDKMCNPQQH-UHFFFAOYSA-N boranylidynetitanium Chemical compound [B].[Ti] QDMRQDKMCNPQQH-UHFFFAOYSA-N 0.000 description 1
- HGHPQUIZVKPZEU-UHFFFAOYSA-N boranylidynezirconium Chemical compound [B].[Zr] HGHPQUIZVKPZEU-UHFFFAOYSA-N 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 230000000670 limiting effect Effects 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 239000005360 phosphosilicate glass Substances 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 150000005837 radical ions Chemical class 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- SFZCNBIFKDRMGX-UHFFFAOYSA-N sulfur hexafluoride Chemical compound FS(F)(F)(F)(F)F SFZCNBIFKDRMGX-UHFFFAOYSA-N 0.000 description 1
- 229960000909 sulfur hexafluoride Drugs 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000005019 vapor deposition process Methods 0.000 description 1
- 238000009279 wet oxidation reaction Methods 0.000 description 1
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- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
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- Solid State Image Pick-Up Elements (AREA)
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Abstract
Description
Claims (34)
- 基板と、
前記基板の裏面上に配置された裏面保護層と、
前記裏面保護層上に配置された透明導電層と
を備えた裏面照射型イメージセンサ。 - 前記透明導電層が、インジウム錫酸化物(ITO)層と、酸化亜鉛(ZO)層と、酸化錫(SnO)層と、亜鉛錫酸化物(ZTO)層とからなるグループから選択された1つである、請求項1に記載の裏面照射型イメージセンサ。
- 前記ITO層には、コバルト(Co)と、チタン(Ti)と、タングステン(W)と、モリブデン(Mo)と、クロム(Cr)とからなるグループから選択された1つがドープされている、請求項2に記載の裏面照射型イメージセンサ。
- 前記ZO層には、マグネシウム(Mg)と、ジルコニウム(Zr)と、リチウム(Li)とからなるグループから選択された1つがドープされている、請求項2に記載の裏面照射型イメージセンサ。
- 前記透明導電層が10nmから500nmの厚さとなるように形成されている、請求項1に記載の裏面照射型イメージセンサ。
- 前記透明導電層がポリシリコン層または金属層を有している、請求項1に記載の裏面照射型イメージセンサ。
- 前記ポリシリコン層が約1nmから約40nmの厚さとなるように形成されている、請求項6に記載の裏面照射型イメージセンサ。
- 前記貴金属が金(Au)または白金(Pt)である、請求項6に記載の裏面照射型イメージセンサ。
- 前記貴金属が約0.1nmから約1nmの厚さとなるように形成されている、請求項6に記載の裏面照射型イメージセンサ。
- 前記裏面保護層が、屈折率が異なる材料が積み重ねられた多層構造を有している、請求項1に記載の裏面照射型イメージセンサ。
- 前記裏面保護層が前記基板より屈折率の低い層を含んでいる、請求項10に記載の裏面照射型イメージセンサ。
- 前記裏面保護層の複数の層のうち、前記基板の裏面の近くに形成されている層ほど屈折率が低い、請求項10に記載の裏面照射型イメージセンサ。
- 前記裏面保護層が、
前記基板の裏面上に形成された第1の絶縁層と、
前記第1の絶縁層上に形成されており、前記第1の絶縁層より屈折率が高い第2の絶縁層と
を有している、請求項1に記載の裏面照射型イメージセンサ。 - 前記第1の絶縁層が酸化物層を含んでおり、前記第2の絶縁層が窒化物層を含んでいる、請求項13に記載の裏面照射型イメージセンサ。
- 前記第1の絶縁層は1nmから10nmの厚さとなるように形成されている、請求項13に記載の裏面照射型イメージセンサ。
- 前記第2の絶縁層は10nmから500nmの厚さとなるように形成されている、請求項15に記載の裏面照射型イメージセンサ。
- 前記基板がp型導電性材料を含んでいる、請求項1に記載の裏面照射型イメージセンサ。
- 第1の基板に配置された受光素子と、
前記受光素子を有する前記第1の基板上に配置された層間絶縁層と、
前記受光素子から間隔をおいて配置されており、前記層間絶縁層と前記第1の基板とを貫通している位置決めキーと、
前記層間絶縁層上に多層構造として配置された複数の相互接続層であって、最下部の相互接続層の裏面が前記位置決めキーと接続している、複数の相互接続層と、
前記相互接続層を覆っている前面保護層と、
前記第1の基板の裏面上に配置された裏面保護層と、
前記裏面保護層上に配置されており、前記位置決めキーと接続している透明導電層と、
前記受光素子と向かい合うように前記透明導電層上に配置されたカラーフィルタ及びマイクロレンズと
を備えた裏面照射型イメージセンサ。 - 前記透明導電層がITO層と、ZO層と、SnO層と、ZTO層とからなるグループから選択された1つである、請求項18に記載の裏面照射型イメージセンサ。
- 前記ITO層には、Coと、Tiと、Wと、Moと、Crとからなるグループから選択された1つがドープされている、請求項19に記載の裏面照射型イメージセンサ。
- 前記ZO層には、Mgと、Zrと、Liとからなるグループから選択された1つがドープされている、請求項19に記載の裏面照射型イメージセンサ。
- 前記透明導電層は10nmから500nmの厚さとなるように形成されている、請求項18に記載の裏面照射型イメージセンサ。
- 前記透明導電層がポリシリコン層または金属層を含んでいる、請求項18に記載の裏面照射型イメージセンサ。
- 前記ポリシリコン層が1nmから40nmの厚さとなるように形成されている、請求項23に記載の裏面照射型イメージセンサ。
- 前記貴金属がAuまたはPtである、請求項23に記載の裏面照射型イメージセンサ。
- 前記貴金属が0.1nmから1nmの厚さとなるように形成されている、請求項23に記載の裏面照射型イメージセンサ。
- 前記裏面保護層が、屈折率の異なる材料が積み重ねられた多層構造を有している、請求項18に記載の裏面照射型イメージセンサ。
- 前記裏面保護層が前記第1の基板より屈折率の低い層を含んでいる、請求項27に記載の裏面照射型イメージセンサ。
- 前記第1の基板がp型導電性材料を含んでいる、請求項18に記載の裏面照射型イメージセンサ。
- 前記位置決めキーが導電性材料から形成されている、請求項18に記載の裏面照射型イメージセンサ。
- 前面保護層に接合された第2の基板を更に備えた請求項18に記載の裏面照射型イメージセンサ。
- 前記第1の基板及び前記第2の基板が、バルク基板か、エピタキシャル基板か、シリコン・オン・インシュレータ(SOI)基板かを含んでいる、請求項31に記載の裏面照射型イメージセンサ。
- 前記位置決めキーに負電圧(−)を印加する負電圧印加ユニットを更に備えた請求項18に記載の裏面照射型イメージセンサ。
- 前記位置決めキーに正電圧(+)を印加する正電圧印加ユニットを更に備えた請求項18に記載の裏面照射型イメージセンサ。
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CN102257618A (zh) | 2011-11-23 |
KR101266414B1 (ko) | 2013-05-22 |
US20100096718A1 (en) | 2010-04-22 |
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EP2361440B1 (en) | 2013-11-20 |
CN102263118B (zh) | 2015-09-09 |
CN102263118A (zh) | 2011-11-30 |
KR20130131496A (ko) | 2013-12-03 |
KR20130064147A (ko) | 2013-06-17 |
CN103400844B (zh) | 2016-05-25 |
JP5684877B2 (ja) | 2015-03-18 |
US20160071900A1 (en) | 2016-03-10 |
EP2361440A1 (en) | 2011-08-31 |
KR20110073605A (ko) | 2011-06-29 |
WO2010048291A1 (en) | 2010-04-29 |
KR20110059807A (ko) | 2011-06-03 |
JP5458103B2 (ja) | 2014-04-02 |
US9553122B2 (en) | 2017-01-24 |
JP2012099858A (ja) | 2012-05-24 |
EP2565926A1 (en) | 2013-03-06 |
JP5437410B2 (ja) | 2014-03-12 |
US7875948B2 (en) | 2011-01-25 |
KR101373233B1 (ko) | 2014-03-11 |
US10020338B2 (en) | 2018-07-10 |
JP2014042046A (ja) | 2014-03-06 |
US8420438B2 (en) | 2013-04-16 |
CN102257618B (zh) | 2014-06-11 |
US20110223707A1 (en) | 2011-09-15 |
KR101339958B1 (ko) | 2013-12-10 |
CN103400844A (zh) | 2013-11-20 |
KR101448284B1 (ko) | 2014-10-13 |
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