CN108511474A - 一种图像传感器的器件邻近结构的制备方法 - Google Patents
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Abstract
本发明涉及半导体技术领域，尤其涉及一种图像传感器的器件邻近结构的制备方法包括：步骤S1，提供一衬底，衬底中制备有像素器件，像素器件中包括至少一个白光光电二极管；步骤S2，于衬底的上表面依次制备一第一氧化层、一高k介电层以及一第二氧化层；步骤S3，制备一氮化硅层覆盖第二氧化层的上表面后进行一退火工艺；步骤S4，于退火工艺完成后采用一刻蚀工艺去除氮化硅层；能够形成对自由电子束缚能力强的邻近结构，保证了白光光电二极管的性能。
Description
技术领域
本发明涉及半导体技术领域，尤其涉及一种图像传感器的器件邻近结构的制备方法。
背景技术
图像传感器，或称感光元件，是一种将光学图像转换成电子信号的设备，它被广泛地应用在数码相机和其他电子光学设备中。对于CMOS(Complementary Metal-Oxide-Semiconductor Transistor互补金属氧化物半导体，简称CMOS)像素器件的图像传感器，一般会在晶圆中制备光电二极管阵列，并且该光电二极管阵列中包括多种光色的光电二极管，例如白光光电二极管。
一般的光电二极管区域在器件的邻近结构处，自由状态电荷束缚能力较弱，容易导致CMOS器件中白光光电二极管的性能较差。
发明内容
针对上述问题，本发明提出了一种图像传感器的器件邻近结构的制备方法，其中，包括：
步骤S1，提供一衬底，所述衬底中制备有像素器件，所述像素器件中包括至少一个白光光电二极管；
步骤S2，于所述衬底的上表面依次制备一第一氧化层、一高k介电层以及一第二氧化层；
步骤S3，制备一氮化硅层覆盖所述第二氧化层的上表面后进行一退火工艺；
步骤S4，于所述退火工艺完成后采用一刻蚀工艺去除所述氮化硅层。
上述的制备方法，其中，所述步骤S1中，采用硅制备所述衬底。
上述的制备方法，其中，所述步骤S2中，采用二氧化铬制备所述高k介电层。
上述的制备方法，其中，所述步骤S2中，采用二氧化硅制备所述第一氧化层。
上述的制备方法，其中，所述步骤S2中，采用二氧化硅制备所述第二氧化层。
上述的制备方法，其中，所述步骤S3中，所述退火工艺的温度为200℃～1000℃。
上述的制备方法，其中，所述衬底中所述白光光电二极管的周围形成有耗尽层。
上述的制备方法，其中，应用于背照式图像传感器。
上述的制备方法，其中，应用于前照式图像传感器。
该制备方法可以有益效果：本发明提出的一种图像传感器的器件邻近结构的制备方法，能够形成对自由电子束缚能力强的邻近结构，保证了白光光电二极管的性能。
附图说明
图1为本发明一实施例中图像传感器的器件邻近结构的制备方法的步骤流程图；
图2～4为本发明一实施例中图像传感器的器件邻近结构的制备方法中各步骤形成的结构原理图；
图5为本发明一实施例中图像传感器的器件邻近结构的测试曲线图。
具体实施方式
下面结合附图和实施例对本发明进行进一步说明。
在一个较佳的实施例中，如图1所示，提出了一种图像传感器的器件邻近结构的制备方法，各步骤形成的结构可以如图2～4所示，其中，可以包括：
步骤S1，提供一衬底10，衬底10中制备有像素器件，像素器件中包括至少一个白光光电二极管(附图中未显示)；
步骤S2，于衬底10的上表面依次制备一第一氧化层20、一高k(介电常数)介电层30以及一第二氧化层40；
步骤S3，制备一氮化硅层50覆盖第二氧化层40的上表面后进行一退火工艺；
步骤S4，于退火工艺完成后采用一刻蚀工艺去除氮化硅层50。
上述技术方案中，由于采用了氮化硅层50覆盖第二氧化层40的上表面，并进行了退火工艺，所形成的器件邻近结构对自由电子的束缚能力强，如若衬底10的光电二极管周围存在耗尽层，则耗尽层的范围也能够得到拓宽，从而保证了光电二极管的性能。
在一个较佳的实施例中，步骤S1中，可以采用硅制备衬底10，但这只是一种优选的情况，不应视为是对本发明的限制，在其他情况下还可以采用其他材料形成衬底10。
在一个较佳的实施例中于，步骤S2中，采用二氧化铬制备高k介电层30，但这只是一种优选的情况，不应视为是对本发明的限制，在其他情况下还可以采用其他材料形成高k介电层30。
在一个较佳的实施例中，步骤S2中，可以采用二氧化硅制备第一氧化层20，但这只是一种优选的情况，不应视为是对本发明的限制。
在一个较佳的实施例中，步骤S2中，可以采用二氧化硅制备第二氧化层40，但这只是一种优选的情况，不应视为是对本发明的限制。
在一个较佳的实施例中，步骤S3中，退火工艺的温度为200℃～1000℃，例如为250℃，或350℃，或400℃，或500℃，或600℃，或700℃，或800℃，或900℃等。
在一个较佳的实施例中，衬底10中白光光电二极管的周围形成有耗尽层，该耗尽层可以是通过离子注入工艺形成的，但这只是一种优选的情况，不应视为是对本发明的限制。
在一个较佳的实施例中，该制备方法可以应用于背照式图像传感器。
在一个较佳的实施例中，该制备方法可以应用于前照式图像传感器。
具体地，如图5所示，横轴为电压，纵轴为电容，由图可知，本发明的平带电压曲线NA平均高于现有平带电压曲线FA，且更稳定。
综上所述，本发明提出的一种图像传感器的器件邻近结构的制备方法包括：步骤S1，提供一衬底，衬底中制备有像素器件，像素器件中包括至少一个白光光电二极管；步骤S2，于衬底的上表面依次制备一第一氧化层、一高k介电层以及一第二氧化层；步骤S3，制备一氮化硅层覆盖第二氧化层的上表面后进行一退火工艺；步骤S4，于退火工艺完成后采用一刻蚀工艺去除氮化硅层；能够形成对自由电子束缚能力强的邻近结构，保证了白光光电二极管的性能。
通过说明和附图，给出了具体实施方式的特定结构的典型实施例，基于本发明精神，还可作其他的转换。尽管上述发明提出了现有的较佳实施例，然而，这些内容并不作为局限。
对于本领域的技术人员而言，阅读上述说明后，各种变化和修正无疑将显而易见。因此，所附的权利要求书应看作是涵盖本发明的真实意图和范围的全部变化和修正。在权利要求书范围内任何和所有等价的范围与内容，都应认为仍属本发明的意图和范围内。
Claims (9)
1.一种图像传感器的器件邻近结构的制备方法，其特征在于，包括：
步骤S1，提供一衬底，所述衬底中制备有像素器件，所述像素器件中包括至少一个白光光电二极管；
步骤S2，于所述衬底的上表面依次制备一第一氧化层、一高k介电层以及一第二氧化层；
步骤S3，制备一氮化硅层覆盖所述第二氧化层的上表面后进行一退火工艺；
步骤S4，于所述退火工艺完成后采用一刻蚀工艺去除所述氮化硅层。
2.根据权利要求1所述的制备方法，其特征在于，所述步骤S1中，采用硅制备所述衬底。
3.根据权利要求1所述的制备方法，其特征在于，所述步骤S2中，采用二氧化铬制备所述高k介电层。
4.根据权利要求1所述的制备方法，其特征在于，所述步骤S2中，采用二氧化硅制备所述第一氧化层。
5.根据权利要求1所述的制备方法，其特征在于，所述步骤S2中，采用二氧化硅制备所述第二氧化层。
6.根据权利要求1所述的制备方法，其特征在于，所述步骤S3中，所述退火工艺的温度为200℃～1000℃。
7.根据权利要求1所述的制备方法，其特征在于，所述衬底中所述白光光电二极管的周围形成有耗尽层。
8.根据权利要求1所述的制备方法，其特征在于，应用于背照式图像传感器。
9.根据权利要求1所述的制备方法，其特征在于，应用于前照式图像传感器。
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| KR100812078B1 (ko) * | 2006-09-26 | 2008-03-07 | 동부일렉트로닉스 주식회사 | 이미지 센서 및 그 제조방법 |
| KR20090046413A (ko) * | 2007-11-06 | 2009-05-11 | 주식회사 동부하이텍 | 이미지센서 및 그 제조방법 |
| US7875948B2 (en) * | 2008-10-21 | 2011-01-25 | Jaroslav Hynecek | Backside illuminated image sensor |
| US9431455B2 (en) * | 2014-11-09 | 2016-08-30 | Tower Semiconductor, Ltd. | Back-end processing using low-moisture content oxide cap layer |
| WO2019132958A1 (en) * | 2017-12-29 | 2019-07-04 | Intel Corporation | Microelectronic assemblies |
| CN108511474A (zh) * | 2018-04-04 | 2018-09-07 | 武汉新芯集成电路制造有限公司 | 一种图像传感器的器件邻近结构的制备方法 |
-
2018
- 2018-04-04 CN CN201810299626.5A patent/CN108511474A/zh active Pending
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2019
- 2019-03-27 CN CN201910236411.3A patent/CN109786417B/zh active Active
- 2019-03-28 WO PCT/CN2019/080030 patent/WO2019192376A1/en active Application Filing
- 2019-09-15 US US16/571,178 patent/US11107856B2/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2019192376A1 (en) * | 2018-04-04 | 2019-10-10 | Wuhan Xinxin Semiconductor Manufacturing Co., Ltd. | Manufacturing method of image sensing device |
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| Publication number | Publication date |
|---|---|
| WO2019192376A1 (en) | 2019-10-10 |
| CN109786417B (zh) | 2020-05-12 |
| US11107856B2 (en) | 2021-08-31 |
| US20200013824A1 (en) | 2020-01-09 |
| CN109786417A (zh) | 2019-05-21 |
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