JP5437410B2 - 裏面照射型イメージセンサ - Google Patents
裏面照射型イメージセンサ Download PDFInfo
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- JP5437410B2 JP5437410B2 JP2012023246A JP2012023246A JP5437410B2 JP 5437410 B2 JP5437410 B2 JP 5437410B2 JP 2012023246 A JP2012023246 A JP 2012023246A JP 2012023246 A JP2012023246 A JP 2012023246A JP 5437410 B2 JP5437410 B2 JP 5437410B2
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- 239000000758 substrate Substances 0.000 claims description 101
- 238000000034 method Methods 0.000 claims description 80
- 229910052751 metal Inorganic materials 0.000 claims description 28
- 239000002184 metal Substances 0.000 claims description 28
- 239000004020 conductor Substances 0.000 claims description 20
- 238000004519 manufacturing process Methods 0.000 claims description 17
- 239000000463 material Substances 0.000 claims description 10
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 10
- 229920005591 polysilicon Polymers 0.000 claims description 10
- 239000012535 impurity Substances 0.000 claims description 7
- 229910000510 noble metal Inorganic materials 0.000 claims description 6
- 229910052719 titanium Inorganic materials 0.000 claims description 6
- 229910052721 tungsten Inorganic materials 0.000 claims description 5
- 230000003667 anti-reflective effect Effects 0.000 claims description 3
- 229910052804 chromium Inorganic materials 0.000 claims description 3
- 229910052744 lithium Inorganic materials 0.000 claims description 3
- 229910052749 magnesium Inorganic materials 0.000 claims description 3
- 229910052750 molybdenum Inorganic materials 0.000 claims description 3
- 229910052726 zirconium Inorganic materials 0.000 claims description 2
- 239000011810 insulating material Substances 0.000 claims 4
- 230000002265 prevention Effects 0.000 claims 1
- 239000010410 layer Substances 0.000 description 283
- 230000008569 process Effects 0.000 description 46
- 239000004065 semiconductor Substances 0.000 description 33
- 239000011241 protective layer Substances 0.000 description 30
- 239000011229 interlayer Substances 0.000 description 24
- 229910052581 Si3N4 Inorganic materials 0.000 description 15
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical group N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 14
- 238000005530 etching Methods 0.000 description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 12
- 150000004767 nitrides Chemical class 0.000 description 12
- 229910052814 silicon oxide Inorganic materials 0.000 description 12
- 229910052710 silicon Inorganic materials 0.000 description 10
- 239000010703 silicon Substances 0.000 description 10
- 239000010936 titanium Substances 0.000 description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 9
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 9
- 230000004888 barrier function Effects 0.000 description 7
- 238000005229 chemical vapour deposition Methods 0.000 description 7
- 239000010949 copper Substances 0.000 description 6
- 125000006850 spacer group Chemical group 0.000 description 6
- 238000007517 polishing process Methods 0.000 description 5
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 4
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 4
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 4
- 239000000956 alloy Substances 0.000 description 4
- 239000005388 borosilicate glass Substances 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- 238000005498 polishing Methods 0.000 description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 238000000231 atomic layer deposition Methods 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 239000011651 chromium Substances 0.000 description 3
- 229910017052 cobalt Inorganic materials 0.000 description 3
- 239000010941 cobalt Substances 0.000 description 3
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 238000001312 dry etching Methods 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 238000005286 illumination Methods 0.000 description 3
- 238000011065 in-situ storage Methods 0.000 description 3
- 239000011777 magnesium Substances 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 238000012858 packaging process Methods 0.000 description 3
- 229910052697 platinum Inorganic materials 0.000 description 3
- 239000005368 silicate glass Substances 0.000 description 3
- -1 silicon nitride compound Chemical class 0.000 description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 3
- 239000010937 tungsten Substances 0.000 description 3
- 238000001039 wet etching Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 229910052582 BN Inorganic materials 0.000 description 2
- XPDWGBQVDMORPB-UHFFFAOYSA-N Fluoroform Chemical compound FC(F)F XPDWGBQVDMORPB-UHFFFAOYSA-N 0.000 description 2
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 2
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 238000005137 deposition process Methods 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 230000001066 destructive effect Effects 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 239000011368 organic material Substances 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 230000002829 reductive effect Effects 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 239000011787 zinc oxide Substances 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- QYEXBYZXHDUPRC-UHFFFAOYSA-N B#[Ti]#B Chemical compound B#[Ti]#B QYEXBYZXHDUPRC-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 1
- 229910018503 SF6 Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910033181 TiB2 Inorganic materials 0.000 description 1
- AXQKVSDUCKWEKE-UHFFFAOYSA-N [C].[Ge].[Si] Chemical compound [C].[Ge].[Si] AXQKVSDUCKWEKE-UHFFFAOYSA-N 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- UQZIWOQVLUASCR-UHFFFAOYSA-N alumane;titanium Chemical compound [AlH3].[Ti] UQZIWOQVLUASCR-UHFFFAOYSA-N 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000007767 bonding agent Substances 0.000 description 1
- QDMRQDKMCNPQQH-UHFFFAOYSA-N boranylidynetitanium Chemical compound [B].[Ti] QDMRQDKMCNPQQH-UHFFFAOYSA-N 0.000 description 1
- HGHPQUIZVKPZEU-UHFFFAOYSA-N boranylidynezirconium Chemical compound [B].[Zr] HGHPQUIZVKPZEU-UHFFFAOYSA-N 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 230000000670 limiting effect Effects 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- KYKLWYKWCAYAJY-UHFFFAOYSA-N oxotin;zinc Chemical compound [Zn].[Sn]=O KYKLWYKWCAYAJY-UHFFFAOYSA-N 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 239000005360 phosphosilicate glass Substances 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 150000005837 radical ions Chemical class 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- SFZCNBIFKDRMGX-UHFFFAOYSA-N sulfur hexafluoride Chemical compound FS(F)(F)(F)(F)F SFZCNBIFKDRMGX-UHFFFAOYSA-N 0.000 description 1
- 229960000909 sulfur hexafluoride Drugs 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000005019 vapor deposition process Methods 0.000 description 1
- 238000009279 wet oxidation reaction Methods 0.000 description 1
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- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
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Description
Claims (20)
- 基板の前面に近接するように受光素子を形成するステップと、
前記基板の前面上に相互接続層を形成するステップであって、前記相互接続層が、パターン化された絶縁材料層中にパターン化された導電材料を含むものである、ステップと、
前記受光素子上を含む前記基板の裏面に透明導電層を形成するステップと、
前記相互接続層の前記パターン化された導電材料を前記透明導電層と電気的に接続する導電性位置決めキーを形成するステップであって、前記導電性位置決めキーが前記基板を貫通して前記相互接続層の前記パターン化された導電材料の少なくとも一部分と前記透明導電層との間に延びている、ステップと
を含む、裏面照射型イメージセンサを製造する方法。 - 前記相互接続層を形成するステップが、前記パターン化された導電材料をパターン化された金属層として、前記パターン化された絶縁材料層中に形成するステップを含むものである、請求項1に記載の方法。
- 前記パターン化された金属層を前記パターン化された絶縁材料層中に形成するステップが、パターン化された複数の金属層をパターン化された複数の絶縁材料層中に形成するステップを含むものである、請求項2に記載の方法。
- 前記導電性位置決めキーを形成するステップが、前記基板の前面から最も近くにあるパターン化された金属層に接触して前記導電性位置決めキーを形成するステップを含むものである、請求項1に記載の方法。
- 前記透明導電層を形成するステップが、ITOと、ZOと、SnOと、ZTOとからなるグループから選択された材料により前記透明導電層を形成するステップを含むものである、請求項1に記載の方法。
- 前記透明導電層を形成するステップが、ITO層を含むように前記透明導電層を形成するステップをさらに含んでおり、CoとTiとWとMoとCrとからなる不純物のグループから選択された不純物を前記ITO層にドープするステップをさらに含む請求項5に記載の方法。
- 前記透明導電層を形成するステップが、ZO層を含むように前記透明導電層を形成するステップをさらに含んでおり、MgとZrとLiとからなる不純物のグループから選択された不純物を前記ZO層にドープするステップをさらに含む請求項5に記載の方法。
- 前記透明導電層を形成するステップが、ポリシリコン層か、貴金属層か、ポリシリコン層及び貴金属層かを含むように前記透明導電層を形成するステップを含むものである、請求項1に記載の方法。
- 前記受光素子を形成するステップが、前記基板にフォトダイオードを形成するステップを含むものである、請求項1に記載の方法。
- 前記導電性位置決めキーを位置決めに使って、前記透明導電層上にカラーフィルタ及びマイクロレンズを形成するステップをさらに含む請求項1に記載の方法。
- 基板の前面に近接するように受光素子を形成するステップと、
前記基板の前面上に、パターン化された絶縁層中にパターン化された導電材料を形成するステップと、
前記パターン化された導電材料に電気的に接触して導電性位置決めキーを形成するステップであって、前記導電性位置決めキーが前記パターン化された導電材料から前記基板を通って延びているものである、ステップと、
前記受光素子上を含む前記基板の裏面に透明導電層を形成するステップであって、前記透明導電層が前記導電性位置決めキーに接触するように形成されて、前記パターン化された導電材料と前記透明導電層との間の電気的接触を提供する、ステップと
を含む、裏面照射型イメージセンサを製造する方法。 - 前記基板の前面上に、パターン化された絶縁層中にパターン化された導電材料を形成するステップが、パターン化された複数の絶縁層中にパターン化された複数の金属層を形成するステップを含むものである、請求項11に記載の方法。
- 前記基板の裏面に反射防止層を形成するステップをさらに含み、前記導電性位置決めキーが前記反射防止層を通って延びている、請求項11に記載の方法。
- 前記透明導電層を形成するステップが、前記透明導電層を前記反射防止層の裏面上に形成するものである、請求項13に記載の方法。
- カラーフィルタを形成する工程の中で当該カラーフィルタの位置決めのために前記位置決めキーを使って前記基板の裏面に当該カラーフィルタを形成するステップをさらに含む請求項11に記載の方法。
- マイクロレンズを形成する工程の中で当該マイクロレンズの位置決めのために前記位置決めキーを使って前記基板の裏面に当該マイクロレンズを形成するステップをさらに含む請求項11に記載の方法。
- 基板の前面に近接するように受光素子を形成するステップと、
前記基板の前面上に、パターン化された複数の絶縁層中に複数の金属層を形成するステップと、
前記基板の裏面に反射防止層を形成するステップと、
前記複数の金属層のうちの最も前面の金属層に電気的に接触して導電性位置決めキーを形成するステップであって、前記導電性位置決めキーが前記最も前面の金属層から前記基板及び前記反射防止層を通って延びている、ステップと、
前記受光素子上を含む前記基板の裏面に透明導電層を形成するステップであって、前記透明導電層が前記反射防止層上に形成されて前記導電性位置決めキーに接触し、前記最も前面の金属層と前記透明導電層との間の電気的接触を提供する、ステップと
を含む、裏面照射型イメージセンサを製造する方法。 - カラーフィルタを形成する工程の中で当該カラーフィルタの位置決めのために前記位置決めキーを使って前記基板の裏面に当該カラーフィルタを形成するステップをさらに含む請求項17に記載の方法。
- カラーフィルタ及びマイクロレンズを形成する工程の中で位置決めのために前記位置決めキーを使って前記基板の裏面に当該カラーフィルタ及びマイクロレンズを形成するステップをさらに含む請求項17に記載の方法。
- 前記透明導電層を形成するステップが、ITOと、ZOと、SnOと、ZTOとからなるグループから選択された材料により前記透明導電層を形成するステップを含むものである、請求項17に記載の方法。
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Also Published As
Publication number | Publication date |
---|---|
US8420438B2 (en) | 2013-04-16 |
JP2012506623A (ja) | 2012-03-15 |
JP2012099858A (ja) | 2012-05-24 |
US20100096718A1 (en) | 2010-04-22 |
KR20110073605A (ko) | 2011-06-29 |
EP2565926A1 (en) | 2013-03-06 |
CN102263118A (zh) | 2011-11-30 |
KR101339958B1 (ko) | 2013-12-10 |
US20160071900A1 (en) | 2016-03-10 |
US9553122B2 (en) | 2017-01-24 |
KR101448284B1 (ko) | 2014-10-13 |
WO2010048291A1 (en) | 2010-04-29 |
US20110223707A1 (en) | 2011-09-15 |
EP2361440B1 (en) | 2013-11-20 |
US10020338B2 (en) | 2018-07-10 |
EP2361440A1 (en) | 2011-08-31 |
KR20110059807A (ko) | 2011-06-03 |
US20130237004A1 (en) | 2013-09-12 |
KR101373233B1 (ko) | 2014-03-11 |
CN103400844B (zh) | 2016-05-25 |
KR20130131496A (ko) | 2013-12-03 |
JP5684877B2 (ja) | 2015-03-18 |
JP5458103B2 (ja) | 2014-04-02 |
CN102263118B (zh) | 2015-09-09 |
KR20130064147A (ko) | 2013-06-17 |
CN102257618A (zh) | 2011-11-23 |
CN102257618B (zh) | 2014-06-11 |
CN103400844A (zh) | 2013-11-20 |
US7875948B2 (en) | 2011-01-25 |
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