JP5667699B2 - 半導体装置の製造方法と半導体装置 - Google Patents

半導体装置の製造方法と半導体装置 Download PDF

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JP5667699B2
JP5667699B2 JP2013525062A JP2013525062A JP5667699B2 JP 5667699 B2 JP5667699 B2 JP 5667699B2 JP 2013525062 A JP2013525062 A JP 2013525062A JP 2013525062 A JP2013525062 A JP 2013525062A JP 5667699 B2 JP5667699 B2 JP 5667699B2
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fin
silicon layer
layer
gate electrode
columnar
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JPWO2013080378A1 (ja
Inventor
舛岡　富士雄
富士雄 舛岡
広記 中村
広記 中村
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Unisantis Electronics Singapore Pte Ltd
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Unisantis Electronics Singapore Pte Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66666—Vertical transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7827—Vertical transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42372—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out
    • H01L29/4238—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out characterised by the surface lay-out

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
JP2013525062A 2011-12-02 2011-12-02 半導体装置の製造方法と半導体装置 Active JP5667699B2 (ja)

Applications Claiming Priority (1)

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PCT/JP2011/077959 WO2013080378A1 (ja) 2011-12-02 2011-12-02 半導体装置の製造方法と半導体装置

Related Child Applications (1)

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JP2014252199A Division JP5974066B2 (ja) 2014-12-12 2014-12-12 半導体装置の製造方法と半導体装置

Publications (2)

Publication Number Publication Date
JP5667699B2 true JP5667699B2 (ja) 2015-02-12
JPWO2013080378A1 JPWO2013080378A1 (ja) 2015-04-27

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JP2013525062A Active JP5667699B2 (ja) 2011-12-02 2011-12-02 半導体装置の製造方法と半導体装置

Country Status (5)

Country Link
JP (1) JP5667699B2 (zh)
KR (1) KR20130083923A (zh)
CN (1) CN103314443A (zh)
TW (1) TW201324626A (zh)
WO (1) WO2013080378A1 (zh)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20130100186A (ko) * 2011-12-19 2013-09-09 유니산티스 일렉트로닉스 싱가포르 프라이빗 리미티드 반도체 장치의 제조 방법과 반도체 장치
JP5680801B1 (ja) * 2013-06-10 2015-03-04 ユニサンティス エレクトロニクス シンガポール プライベート リミテッドＵｎｉｓａｎｔｉｓ Ｅｌｅｃｔｒｏｎｉｃｓ Ｓｉｎｇａｐｏｒｅ Ｐｔｅ Ｌｔｄ． 半導体装置の製造方法、及び、半導体装置
JP5740535B1 (ja) 2013-07-19 2015-06-24 ユニサンティス エレクトロニクス シンガポール プライベート リミテッドＵｎｉｓａｎｔｉｓ Ｅｌｅｃｔｒｏｎｉｃｓ Ｓｉｎｇａｐｏｒｅ Ｐｔｅ Ｌｔｄ． 半導体装置の製造方法、及び、半導体装置
WO2015083287A1 (ja) * 2013-12-06 2015-06-11 ユニサンティス エレクトロニクス シンガポール プライベート リミテッド 半導体装置及び半導体装置の製造方法
US9780213B2 (en) * 2014-04-15 2017-10-03 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device having a reversed T-shaped profile in the metal gate line-end
US9608116B2 (en) * 2014-06-27 2017-03-28 Taiwan Semiconductor Manufacturing Company, Ltd. FINFETs with wrap-around silicide and method forming the same
JP6285393B2 (ja) * 2015-06-04 2018-02-28 ユニサンティス エレクトロニクス シンガポール プライベート リミテッドＵｎｉｓａｎｔｉｓ Ｅｌｅｃｔｒｏｎｉｃｓ Ｓｉｎｇａｐｏｒｅ Ｐｔｅ Ｌｔｄ． 半導体装置の製造方法、及び、半導体装置
JP6235686B2 (ja) * 2016-11-30 2017-11-22 ユニサンティス エレクトロニクス シンガポール プライベート リミテッドＵｎｉｓａｎｔｉｓ Ｅｌｅｃｔｒｏｎｉｃｓ Ｓｉｎｇａｐｏｒｅ Ｐｔｅ Ｌｔｄ． 半導体装置、及び半導体装置の製造方法
CN109148607B (zh) * 2017-06-27 2021-08-13 中芯国际集成电路制造(上海)有限公司 半导体装置、mos电容器及其制造方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009095997A1 (ja) * 2008-01-29 2009-08-06 Unisantis Electronics (Japan) Ltd. 半導体装置およびその製造方法
JP2010251678A (ja) * 2009-04-20 2010-11-04 Unisantis Electronics Japan Ltd 半導体装置の製造方法
JP2011071235A (ja) * 2009-09-24 2011-04-07 Toshiba Corp 半導体装置及びその製造方法
JP2011100826A (ja) * 2009-11-05 2011-05-19 Elpida Memory Inc 半導体装置の製造方法および半導体装置

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010073869A (ja) * 2008-09-18 2010-04-02 Toshiba Corp 半導体装置およびその製造方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009095997A1 (ja) * 2008-01-29 2009-08-06 Unisantis Electronics (Japan) Ltd. 半導体装置およびその製造方法
JP2010251678A (ja) * 2009-04-20 2010-11-04 Unisantis Electronics Japan Ltd 半導体装置の製造方法
JP2011071235A (ja) * 2009-09-24 2011-04-07 Toshiba Corp 半導体装置及びその製造方法
JP2011100826A (ja) * 2009-11-05 2011-05-19 Elpida Memory Inc 半導体装置の製造方法および半導体装置

Also Published As

Publication number Publication date
TW201324626A (zh) 2013-06-16
KR20130083923A (ko) 2013-07-23
JPWO2013080378A1 (ja) 2015-04-27
WO2013080378A1 (ja) 2013-06-06
CN103314443A (zh) 2013-09-18

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