JP5651487B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP5651487B2
JP5651487B2 JP2011005537A JP2011005537A JP5651487B2 JP 5651487 B2 JP5651487 B2 JP 5651487B2 JP 2011005537 A JP2011005537 A JP 2011005537A JP 2011005537 A JP2011005537 A JP 2011005537A JP 5651487 B2 JP5651487 B2 JP 5651487B2
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JP
Japan
Prior art keywords
transistor
insulating layer
source
drain electrode
electrode
Prior art date
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Expired - Fee Related
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JP2011005537A
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Japanese (ja)
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JP2011166133A (ja
JP2011166133A5 (enExample
Inventor
祐輔 関根
祐輔 関根
塩野入　豊
豊 塩野入
加藤　清
清 加藤
山崎　舜平
舜平 山崎
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2011005537A priority Critical patent/JP5651487B2/ja
Publication of JP2011166133A publication Critical patent/JP2011166133A/ja
Publication of JP2011166133A5 publication Critical patent/JP2011166133A5/ja
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Expired - Fee Related legal-status Critical Current
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/70—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates the floating gate being an electrode shared by two or more components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D87/00—Integrated devices comprising both bulk components and either SOI or SOS components on the same substrate

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  • Semiconductor Memories (AREA)
  • Thin Film Transistor (AREA)
  • Dram (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Non-Volatile Memory (AREA)
JP2011005537A 2010-01-15 2011-01-14 半導体装置 Expired - Fee Related JP5651487B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2011005537A JP5651487B2 (ja) 2010-01-15 2011-01-14 半導体装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2010007494 2010-01-15
JP2010007494 2010-01-15
JP2011005537A JP5651487B2 (ja) 2010-01-15 2011-01-14 半導体装置

Related Child Applications (1)

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JP2014232403A Division JP5889997B2 (ja) 2010-01-15 2014-11-17 半導体装置

Publications (3)

Publication Number Publication Date
JP2011166133A JP2011166133A (ja) 2011-08-25
JP2011166133A5 JP2011166133A5 (enExample) 2014-02-13
JP5651487B2 true JP5651487B2 (ja) 2015-01-14

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Family Applications (3)

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JP2011005537A Expired - Fee Related JP5651487B2 (ja) 2010-01-15 2011-01-14 半導体装置
JP2014232403A Active JP5889997B2 (ja) 2010-01-15 2014-11-17 半導体装置
JP2016027587A Active JP6200008B2 (ja) 2010-01-15 2016-02-17 半導体装置

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JP2016027587A Active JP6200008B2 (ja) 2010-01-15 2016-02-17 半導体装置

Country Status (5)

Country Link
US (1) US8698219B2 (enExample)
JP (3) JP5651487B2 (enExample)
KR (1) KR101791279B1 (enExample)
TW (1) TWI528502B (enExample)
WO (1) WO2011086871A1 (enExample)

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KR102135817B1 (ko) 2009-12-18 2020-07-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 액정 표시 장치 및 전자 기기
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KR101822962B1 (ko) 2010-02-05 2018-01-31 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR101921618B1 (ko) * 2010-02-05 2018-11-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 구동 방법
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JP6689062B2 (ja) 2014-12-10 2020-04-28 株式会社半導体エネルギー研究所 半導体装置
CN106409919A (zh) 2015-07-30 2017-02-15 株式会社半导体能源研究所 半导体装置以及包括该半导体装置的显示装置
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US8698219B2 (en) 2014-04-15
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US20110175083A1 (en) 2011-07-21
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JP6200008B2 (ja) 2017-09-20
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