JP5646130B2 - マルチレーザー用途のレーザー・アセンブリ - Google Patents
マルチレーザー用途のレーザー・アセンブリ Download PDFInfo
- Publication number
- JP5646130B2 JP5646130B2 JP2007185141A JP2007185141A JP5646130B2 JP 5646130 B2 JP5646130 B2 JP 5646130B2 JP 2007185141 A JP2007185141 A JP 2007185141A JP 2007185141 A JP2007185141 A JP 2007185141A JP 5646130 B2 JP5646130 B2 JP 5646130B2
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- Prior art keywords
- laser
- lasers
- flat surface
- substantially flat
- angle
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000000758 substrate Substances 0.000 claims description 30
- 238000000034 method Methods 0.000 claims description 22
- 238000005530 etching Methods 0.000 claims description 12
- 239000013078 crystal Substances 0.000 claims description 10
- 229910021419 crystalline silicon Inorganic materials 0.000 claims description 7
- 239000004065 semiconductor Substances 0.000 description 67
- 230000003287 optical effect Effects 0.000 description 32
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 15
- 229910052710 silicon Inorganic materials 0.000 description 15
- 239000010703 silicon Substances 0.000 description 15
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 13
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- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000001020 plasma etching Methods 0.000 description 4
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
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- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- ONRPGGOGHKMHDT-UHFFFAOYSA-N benzene-1,2-diol;ethane-1,2-diamine Chemical compound NCCN.OC1=CC=CC=C1O ONRPGGOGHKMHDT-UHFFFAOYSA-N 0.000 description 1
- -1 but not limited to Substances 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
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- 229910052802 copper Inorganic materials 0.000 description 1
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- 239000008188 pellet Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910001174 tin-lead alloy Inorganic materials 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0225—Out-coupling of light
- H01S5/02257—Out-coupling of light using windows, e.g. specially adapted for back-reflecting light to a detector inside the housing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0235—Method for mounting laser chips
- H01S5/02355—Fixing laser chips on mounts
- H01S5/0237—Fixing laser chips on mounts by soldering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4012—Beam combining, e.g. by the use of fibres, gratings, polarisers, prisms
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
- H01S5/4031—Edge-emitting structures
- H01S5/4056—Edge-emitting structures emitting light in more than one direction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0225—Out-coupling of light
- H01S5/02255—Out-coupling of light using beam deflecting elements
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11/457850 | 2006-07-17 | ||
| US11/457,850 US7675955B2 (en) | 2006-07-17 | 2006-07-17 | Laser assembly for multi-laser applications |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2008028391A JP2008028391A (ja) | 2008-02-07 |
| JP2008028391A5 JP2008028391A5 (enExample) | 2011-07-14 |
| JP5646130B2 true JP5646130B2 (ja) | 2014-12-24 |
Family
ID=38949196
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007185141A Expired - Fee Related JP5646130B2 (ja) | 2006-07-17 | 2007-07-17 | マルチレーザー用途のレーザー・アセンブリ |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US7675955B2 (enExample) |
| JP (1) | JP5646130B2 (enExample) |
| KR (1) | KR101350125B1 (enExample) |
| TW (1) | TWI412195B (enExample) |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102013104728A1 (de) | 2013-05-07 | 2014-11-13 | Osram Opto Semiconductors Gmbh | Laserdiodenvorrichtung |
| DE102015108117A1 (de) * | 2015-05-22 | 2016-11-24 | Osram Opto Semiconductors Gmbh | Bauelement |
| JP6806084B2 (ja) * | 2015-12-09 | 2021-01-06 | パナソニック株式会社 | 半導体発光装置 |
| JP6759714B2 (ja) * | 2016-05-26 | 2020-09-23 | セイコーエプソン株式会社 | 光源装置およびプロジェクター |
| JP6631502B2 (ja) | 2016-12-27 | 2020-01-15 | 日亜化学工業株式会社 | レーザパッケージの製造方法 |
| WO2019116547A1 (ja) * | 2017-12-15 | 2019-06-20 | 三菱電機株式会社 | 半導体レーザ装置および半導体レーザ装置の製造方法 |
| CN113711349B (zh) * | 2019-04-25 | 2024-10-18 | 京瓷株式会社 | 发光元件搭载用基板以及发光装置 |
| JP7332860B2 (ja) * | 2019-05-29 | 2023-08-24 | 日亜化学工業株式会社 | 発光装置 |
| US20220166185A1 (en) * | 2019-08-06 | 2022-05-26 | Mitsubishi Electric Corporation | Semiconductor laser device |
| KR102370853B1 (ko) * | 2020-10-26 | 2022-03-07 | (주)큐에스아이 | 다채널 및 다중빔 구동 표면실장형 레이저 다이오드 |
| CN112234429B (zh) * | 2020-12-10 | 2021-07-09 | 武汉乾希科技有限公司 | 多通道激光发射器和光通信器件 |
| US12215857B2 (en) | 2020-12-24 | 2025-02-04 | Nichia Corporation | Light emitting device |
| WO2024058088A1 (ja) * | 2022-09-12 | 2024-03-21 | ローム株式会社 | 半導体発光装置 |
| WO2024132125A1 (en) * | 2022-12-21 | 2024-06-27 | Huawei Technologies Co., Ltd. | Dual wavelength lasers |
Family Cites Families (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4137123A (en) | 1975-12-31 | 1979-01-30 | Motorola, Inc. | Texture etching of silicon: method |
| JPS61153360U (enExample) * | 1985-03-14 | 1986-09-22 | ||
| US4995045A (en) * | 1990-02-01 | 1991-02-19 | Northern Telecom Limited | Laser control circuit |
| JPH06318339A (ja) * | 1993-05-07 | 1994-11-15 | Hitachi Ltd | 光ピックアップ及び光ディスク装置 |
| KR100253810B1 (ko) * | 1997-07-10 | 2000-04-15 | 구자홍 | 이파장 광원모듈 및 그를 이용한 광픽업장치 |
| US6151342A (en) * | 1997-12-08 | 2000-11-21 | Coherent, Inc. | Bright diode-laser light-source |
| JP2000114655A (ja) * | 1998-09-30 | 2000-04-21 | Toshiba Corp | サブマウントミラー方式面型レーザ |
| CN1231898C (zh) * | 1999-08-04 | 2005-12-14 | 株式会社日立制作所 | 激光模块和激光头 |
| JP2001217500A (ja) * | 1999-11-25 | 2001-08-10 | Matsushita Electric Ind Co Ltd | 半導体装置及び光ピックアップ装置 |
| JP3732993B2 (ja) | 2000-02-09 | 2006-01-11 | シャープ株式会社 | 太陽電池セルおよびその製造方法 |
| US6937405B2 (en) * | 2000-03-03 | 2005-08-30 | Ricoh Company, Ltd. | Optical pickup projecting two laser beams from apparently approximated light-emitting points |
| JP2002117566A (ja) * | 2000-10-03 | 2002-04-19 | Teac Corp | 光ピックアップ装置 |
| JP2002133869A (ja) * | 2000-10-30 | 2002-05-10 | Mitsubishi Electric Corp | 半導体記憶装置 |
| US6469843B2 (en) | 2000-12-14 | 2002-10-22 | Agere Systems Guardian Corp. | Optical bench assembly and fabrication method |
| JP4271993B2 (ja) | 2003-05-29 | 2009-06-03 | 株式会社日立製作所 | 光モジュール |
-
2006
- 2006-07-17 US US11/457,850 patent/US7675955B2/en active Active
-
2007
- 2007-03-01 TW TW096107001A patent/TWI412195B/zh not_active IP Right Cessation
- 2007-07-17 JP JP2007185141A patent/JP5646130B2/ja not_active Expired - Fee Related
- 2007-07-18 KR KR1020070071917A patent/KR101350125B1/ko active Active
Also Published As
| Publication number | Publication date |
|---|---|
| JP2008028391A (ja) | 2008-02-07 |
| US7675955B2 (en) | 2010-03-09 |
| TW200807830A (en) | 2008-02-01 |
| US20080013584A1 (en) | 2008-01-17 |
| KR101350125B1 (ko) | 2014-01-15 |
| TWI412195B (zh) | 2013-10-11 |
| KR20080007531A (ko) | 2008-01-22 |
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