JP5642001B2 - プラズマエッチング方法 - Google Patents

プラズマエッチング方法 Download PDF

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Publication number
JP5642001B2
JP5642001B2 JP2011068694A JP2011068694A JP5642001B2 JP 5642001 B2 JP5642001 B2 JP 5642001B2 JP 2011068694 A JP2011068694 A JP 2011068694A JP 2011068694 A JP2011068694 A JP 2011068694A JP 5642001 B2 JP5642001 B2 JP 5642001B2
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JP
Japan
Prior art keywords
gas
plasma
etching
plasma etching
film
Prior art date
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Expired - Fee Related
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JP2011068694A
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English (en)
Japanese (ja)
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JP2012204668A5 (enExample
JP2012204668A (ja
Inventor
義樹 五十嵐
義樹 五十嵐
和樹 成重
和樹 成重
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to JP2011068694A priority Critical patent/JP5642001B2/ja
Priority to KR1020120029140A priority patent/KR101916459B1/ko
Priority to US13/428,223 priority patent/US8518830B2/en
Publication of JP2012204668A publication Critical patent/JP2012204668A/ja
Publication of JP2012204668A5 publication Critical patent/JP2012204668A5/ja
Application granted granted Critical
Publication of JP5642001B2 publication Critical patent/JP5642001B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H10P50/242—
    • H10P50/285—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H10P50/73—

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
JP2011068694A 2011-03-25 2011-03-25 プラズマエッチング方法 Expired - Fee Related JP5642001B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2011068694A JP5642001B2 (ja) 2011-03-25 2011-03-25 プラズマエッチング方法
KR1020120029140A KR101916459B1 (ko) 2011-03-25 2012-03-22 플라즈마 에칭 방법 및 기억 매체
US13/428,223 US8518830B2 (en) 2011-03-25 2012-03-23 Plasma etching method and storage medium

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011068694A JP5642001B2 (ja) 2011-03-25 2011-03-25 プラズマエッチング方法

Publications (3)

Publication Number Publication Date
JP2012204668A JP2012204668A (ja) 2012-10-22
JP2012204668A5 JP2012204668A5 (enExample) 2014-05-08
JP5642001B2 true JP5642001B2 (ja) 2014-12-17

Family

ID=46877698

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011068694A Expired - Fee Related JP5642001B2 (ja) 2011-03-25 2011-03-25 プラズマエッチング方法

Country Status (3)

Country Link
US (1) US8518830B2 (enExample)
JP (1) JP5642001B2 (enExample)
KR (1) KR101916459B1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20210151699A (ko) 2020-06-05 2021-12-14 도쿄엘렉트론가부시키가이샤 기판 처리 방법 및 기판 처리 장치

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6035117B2 (ja) * 2012-11-09 2016-11-30 東京エレクトロン株式会社 プラズマエッチング方法及びプラズマエッチング装置
JP2014225501A (ja) * 2013-05-15 2014-12-04 東京エレクトロン株式会社 プラズマエッチング方法及びプラズマエッチング装置
JP6185305B2 (ja) * 2013-06-28 2017-08-23 東京エレクトロン株式会社 プラズマエッチング方法およびプラズマエッチング装置
JP6207947B2 (ja) * 2013-09-24 2017-10-04 東京エレクトロン株式会社 被処理体をプラズマ処理する方法
JP6643875B2 (ja) * 2015-11-26 2020-02-12 東京エレクトロン株式会社 エッチング方法
JP6643876B2 (ja) 2015-11-26 2020-02-12 東京エレクトロン株式会社 エッチング方法
JP6637838B2 (ja) * 2016-05-26 2020-01-29 東京エレクトロン株式会社 プラズマ処理方法
JP6415636B2 (ja) * 2017-05-25 2018-10-31 東京エレクトロン株式会社 プラズマエッチング方法及びプラズマエッチング装置
JP2018200925A (ja) * 2017-05-25 2018-12-20 東京エレクトロン株式会社 エッチング方法およびエッチング装置
KR102799403B1 (ko) * 2018-02-05 2025-04-22 램 리써치 코포레이션 비정질 탄소 층 개방 프로세스
JP7022651B2 (ja) 2018-05-28 2022-02-18 東京エレクトロン株式会社 膜をエッチングする方法及びプラズマ処理装置
JP2020009840A (ja) * 2018-07-04 2020-01-16 東京エレクトロン株式会社 エッチング方法及び基板処理装置
JP2020088174A (ja) * 2018-11-26 2020-06-04 東京エレクトロン株式会社 エッチング方法及び基板処理装置
JP7339032B2 (ja) 2019-06-28 2023-09-05 東京エレクトロン株式会社 基板処理方法および基板処理装置
JP7336365B2 (ja) 2019-11-19 2023-08-31 東京エレクトロン株式会社 膜をエッチングする方法及びプラズマ処理装置
US11443954B2 (en) 2019-12-10 2022-09-13 Tokyo Electron Limited Method and apparatus for controlling a shape of a pattern over a substrate
JP7557969B2 (ja) 2020-01-29 2024-09-30 東京エレクトロン株式会社 エッチング方法、基板処理装置、及び基板処理システム
US12112954B2 (en) 2020-01-29 2024-10-08 Tokyo Electron Limited Etching method, substrate processing apparatus, and substrate processing system
US12266534B2 (en) 2020-06-15 2025-04-01 Tokyo Electron Limited Forming a semiconductor device using a protective layer
JP2023082809A (ja) * 2021-12-03 2023-06-15 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
JPWO2024019123A1 (enExample) * 2022-07-22 2024-01-25
JP2025128419A (ja) * 2022-07-22 2025-09-03 住友精化株式会社 炭素原子含有膜のドライエッチング方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030003694A1 (en) * 2001-06-28 2003-01-02 Apostolos Voutsas Method for forming silicon films with trace impurities
AU2003244166A1 (en) * 2002-06-27 2004-01-19 Tokyo Electron Limited Plasma processing method
JP2004214465A (ja) 2003-01-07 2004-07-29 Renesas Technology Corp 半導体装置の製造方法
JP2006351862A (ja) 2005-06-16 2006-12-28 Toshiba Corp 半導体装置の製造方法
US7883632B2 (en) * 2006-03-22 2011-02-08 Tokyo Electron Limited Plasma processing method
JP5067068B2 (ja) * 2007-08-17 2012-11-07 東京エレクトロン株式会社 半導体装置の製造方法及び記憶媒体
JP5213496B2 (ja) * 2008-03-31 2013-06-19 東京エレクトロン株式会社 プラズマエッチング方法及びコンピュータ読み取り可能な記憶媒体
US8383001B2 (en) * 2009-02-20 2013-02-26 Tokyo Electron Limited Plasma etching method, plasma etching apparatus and storage medium

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20210151699A (ko) 2020-06-05 2021-12-14 도쿄엘렉트론가부시키가이샤 기판 처리 방법 및 기판 처리 장치

Also Published As

Publication number Publication date
KR20120109343A (ko) 2012-10-08
KR101916459B1 (ko) 2018-11-07
US8518830B2 (en) 2013-08-27
US20120244709A1 (en) 2012-09-27
JP2012204668A (ja) 2012-10-22

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