JP5624939B2 - 露光領域間のパターンシフト量に対する測定方法及び測定マーク - Google Patents

露光領域間のパターンシフト量に対する測定方法及び測定マーク Download PDF

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Publication number
JP5624939B2
JP5624939B2 JP2011109314A JP2011109314A JP5624939B2 JP 5624939 B2 JP5624939 B2 JP 5624939B2 JP 2011109314 A JP2011109314 A JP 2011109314A JP 2011109314 A JP2011109314 A JP 2011109314A JP 5624939 B2 JP5624939 B2 JP 5624939B2
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Japan
Prior art keywords
measurement mark
measurement
shift amount
exposure
pattern shift
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Expired - Fee Related
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JP2011109314A
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English (en)
Japanese (ja)
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JP2011242774A (ja
JP2011242774A5 (https=
Inventor
建 郭
建 郭
偉峰 周
偉峰 周
星 明
星 明
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Beijing BOE Optoelectronics Technology Co Ltd
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Beijing BOE Optoelectronics Technology Co Ltd
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B7/00—Measuring arrangements characterised by the use of electric or magnetic techniques
    • G01B7/003—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring position, not involving coordinate determination
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B7/00—Measuring arrangements characterised by the use of electric or magnetic techniques
    • G01B7/14—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring distance or clearance between spaced objects or spaced apertures
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70653—Metrology techniques
    • G03F7/70658—Electrical testing
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70681—Metrology strategies
    • G03F7/70683—Mark designs
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B2210/00—Aspects not specifically covered by any group under G01B, e.g. of wheel alignment, caliper-like sensors
    • G01B2210/56—Measuring geometric parameters of semiconductor structures, e.g. profile, critical dimensions or trench depth

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP2011109314A 2010-05-14 2011-05-16 露光領域間のパターンシフト量に対する測定方法及び測定マーク Expired - Fee Related JP5624939B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201010175934.0 2010-05-14
CN2010101759340A CN102243443A (zh) 2010-05-14 2010-05-14 曝光区域之间图形偏移量的检测方法及测试图形

Publications (3)

Publication Number Publication Date
JP2011242774A JP2011242774A (ja) 2011-12-01
JP2011242774A5 JP2011242774A5 (https=) 2012-10-04
JP5624939B2 true JP5624939B2 (ja) 2014-11-12

Family

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Family Applications (1)

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JP2011109314A Expired - Fee Related JP5624939B2 (ja) 2010-05-14 2011-05-16 露光領域間のパターンシフト量に対する測定方法及び測定マーク

Country Status (4)

Country Link
US (2) US8883523B2 (https=)
JP (1) JP5624939B2 (https=)
KR (1) KR101301216B1 (https=)
CN (1) CN102243443A (https=)

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* Cited by examiner, † Cited by third party
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CN105453088B (zh) * 2013-07-29 2018-09-11 株式会社村田制作所 考虑到施加交流电压的电容器的静电电容值决定方法及程序
FR3028328A1 (fr) * 2015-03-17 2016-05-13 Commissariat Energie Atomique Procede de controle de positionnement relatif
CN104835837B (zh) * 2015-06-05 2017-07-28 杭州士兰微电子股份有限公司 高压半导体器件及其制造方法
CN105206601B (zh) 2015-10-19 2019-03-12 京东方科技集团股份有限公司 测试组件单元、阵列基板、显示面板、显示装置以及制造测试组件单元的方法
CN109388030B (zh) * 2017-08-11 2020-09-15 联华电子股份有限公司 一组测试键布局结构与其布局图形对位失准的测量方法
CN110931380B (zh) * 2019-12-09 2023-02-07 上海华力微电子有限公司 测试方法
CN111123070A (zh) * 2019-12-19 2020-05-08 黄石沪士电子有限公司 一种pcb防焊对位能力测试图形及方法
CN113834827B (zh) * 2020-06-24 2024-04-12 江苏长电科技股份有限公司 多层电路基板及其偏移检测方法
CN111721245A (zh) * 2020-06-30 2020-09-29 上海创功通讯技术有限公司 一种热压偏位检测设备和检测方法
CN112563150B (zh) * 2020-12-17 2023-04-25 成都海光微电子技术有限公司 提高芯片内器件性能均匀性的方法、装置及电子设备
CN113917802A (zh) * 2021-10-13 2022-01-11 杭州广立微电子股份有限公司 一种套刻误差的测量计算方法
US12002765B2 (en) * 2022-01-04 2024-06-04 Nanya Technology Corporation Marks for overlay measurement and overlay error correction
CN119008594B (zh) * 2024-08-05 2025-07-22 成都海光微电子技术有限公司 一种半导体装置及工艺测试方法

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JPH03270211A (ja) 1990-03-20 1991-12-02 Sumitomo Metal Ind Ltd マスクアライメントずれ検査用のトランジスタ
JP3552077B2 (ja) * 1996-07-26 2004-08-11 ソニー株式会社 合わせずれ測定方法及び合わせずれ測定パターン
JPH1123668A (ja) * 1997-07-04 1999-01-29 Sony Corp 配線不良検査回路
JP2000252340A (ja) 1999-03-02 2000-09-14 Sony Corp 接続精度測定方法および接続精度測定素子
JP2001093818A (ja) 1999-09-24 2001-04-06 Toshiba Corp 露光方法及びレチクル
JP3818903B2 (ja) * 2001-12-06 2006-09-06 株式会社リコー 半導体装置のアライメント誤差の測定用素子
JP2004303954A (ja) * 2003-03-31 2004-10-28 Denso Corp 半導体装置のｔｅｇパターンおよびｔｅｇパターンを使ったパターンずれの検査方法
JP4268951B2 (ja) * 2005-04-06 2009-05-27 Ｔｄｋ株式会社 ウェハにおける識別情報記入方法
JP2008218921A (ja) * 2007-03-07 2008-09-18 Nec Electronics Corp 位置ずれ量の測定用パターンおよび測定方法、ならびに半導体装置
JP2008283051A (ja) 2007-05-11 2008-11-20 Toshiba Corp 半導体記憶装置及び半導体記憶装置の製造方法
TW200913013A (en) 2007-07-30 2009-03-16 Hoya Corp Method of manufacturing a gray tone mask, gray tone mask, method of inspecting a gray tone mask, and method of transferring a pattern
JP2010114130A (ja) 2008-11-04 2010-05-20 Panasonic Corp 半導体装置及びその製造方法
NL2004545A (en) * 2009-06-09 2010-12-13 Asml Netherlands Bv Lithographic method and arrangement
US8102064B2 (en) * 2010-04-08 2012-01-24 Nanya Technology Corp. Electrical alignment mark set and method for aligning wafer stack

Also Published As

Publication number Publication date
US9303969B2 (en) 2016-04-05
KR101301216B1 (ko) 2013-08-28
JP2011242774A (ja) 2011-12-01
KR20110126062A (ko) 2011-11-22
US8883523B2 (en) 2014-11-11
US20110279132A1 (en) 2011-11-17
US20150002173A1 (en) 2015-01-01
CN102243443A (zh) 2011-11-16

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