CN102243443A - 曝光区域之间图形偏移量的检测方法及测试图形 - Google Patents

曝光区域之间图形偏移量的检测方法及测试图形 Download PDF

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Publication number
CN102243443A
CN102243443A CN2010101759340A CN201010175934A CN102243443A CN 102243443 A CN102243443 A CN 102243443A CN 2010101759340 A CN2010101759340 A CN 2010101759340A CN 201010175934 A CN201010175934 A CN 201010175934A CN 102243443 A CN102243443 A CN 102243443A
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CN
China
Prior art keywords
resolution chart
area
exposure
resolution
pattern
Prior art date
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Pending
Application number
CN2010101759340A
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English (en)
Chinese (zh)
Inventor
郭建
周伟峰
明星
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Beijing BOE Optoelectronics Technology Co Ltd
Original Assignee
Beijing BOE Optoelectronics Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Beijing BOE Optoelectronics Technology Co Ltd filed Critical Beijing BOE Optoelectronics Technology Co Ltd
Priority to CN2010101759340A priority Critical patent/CN102243443A/zh
Priority to US13/107,064 priority patent/US8883523B2/en
Priority to KR1020110045002A priority patent/KR101301216B1/ko
Priority to JP2011109314A priority patent/JP5624939B2/ja
Publication of CN102243443A publication Critical patent/CN102243443A/zh
Priority to US14/487,568 priority patent/US9303969B2/en
Pending legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B7/00—Measuring arrangements characterised by the use of electric or magnetic techniques
    • G01B7/003—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring position, not involving coordinate determination
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B7/00—Measuring arrangements characterised by the use of electric or magnetic techniques
    • G01B7/14—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring distance or clearance between spaced objects or spaced apertures
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70653—Metrology techniques
    • G03F7/70658—Electrical testing
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70681—Metrology strategies
    • G03F7/70683—Mark designs
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B2210/00—Aspects not specifically covered by any group under G01B, e.g. of wheel alignment, caliper-like sensors
    • G01B2210/56—Measuring geometric parameters of semiconductor structures, e.g. profile, critical dimensions or trench depth

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
CN2010101759340A 2010-05-14 2010-05-14 曝光区域之间图形偏移量的检测方法及测试图形 Pending CN102243443A (zh)

Priority Applications (5)

Application Number Priority Date Filing Date Title
CN2010101759340A CN102243443A (zh) 2010-05-14 2010-05-14 曝光区域之间图形偏移量的检测方法及测试图形
US13/107,064 US8883523B2 (en) 2010-05-14 2011-05-13 Method for detecting pattern offset amount of exposed regions and detecting mark
KR1020110045002A KR101301216B1 (ko) 2010-05-14 2011-05-13 노광 영역 간의 패턴 시프트량에 대한 측정 방법 및 측정 마크
JP2011109314A JP5624939B2 (ja) 2010-05-14 2011-05-16 露光領域間のパターンシフト量に対する測定方法及び測定マーク
US14/487,568 US9303969B2 (en) 2010-05-14 2014-09-16 Method for detecting pattern offset amount of exposed regions and detecting mark

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN2010101759340A CN102243443A (zh) 2010-05-14 2010-05-14 曝光区域之间图形偏移量的检测方法及测试图形

Publications (1)

Publication Number Publication Date
CN102243443A true CN102243443A (zh) 2011-11-16

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN2010101759340A Pending CN102243443A (zh) 2010-05-14 2010-05-14 曝光区域之间图形偏移量的检测方法及测试图形

Country Status (4)

Country Link
US (2) US8883523B2 (https=)
JP (1) JP5624939B2 (https=)
KR (1) KR101301216B1 (https=)
CN (1) CN102243443A (https=)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104835837A (zh) * 2015-06-05 2015-08-12 杭州士兰微电子股份有限公司 高压半导体器件及其制造方法
WO2017067458A1 (zh) * 2015-10-19 2017-04-27 京东方科技集团股份有限公司 测试组件单元、阵列基板、显示面板、显示装置以及制造阵列基板的方法
CN109388030A (zh) * 2017-08-11 2019-02-26 联华电子股份有限公司 一组测试键布局结构与其布局图形对位失准的测量方法
CN110931380A (zh) * 2019-12-09 2020-03-27 上海华力微电子有限公司 测试方法
CN111123070A (zh) * 2019-12-19 2020-05-08 黄石沪士电子有限公司 一种pcb防焊对位能力测试图形及方法
CN111721245A (zh) * 2020-06-30 2020-09-29 上海创功通讯技术有限公司 一种热压偏位检测设备和检测方法
CN112563150A (zh) * 2020-12-17 2021-03-26 成都海光微电子技术有限公司 提高芯片内器件性能均匀性的方法、装置及电子设备
CN113834827A (zh) * 2020-06-24 2021-12-24 江苏长电科技股份有限公司 多层电路基板及其偏移检测方法
CN113917802A (zh) * 2021-10-13 2022-01-11 杭州广立微电子股份有限公司 一种套刻误差的测量计算方法
CN119008594A (zh) * 2024-08-05 2024-11-22 成都海光微电子技术有限公司 一种半导体装置及工艺测试方法

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CN105453088B (zh) * 2013-07-29 2018-09-11 株式会社村田制作所 考虑到施加交流电压的电容器的静电电容值决定方法及程序
FR3028328A1 (fr) * 2015-03-17 2016-05-13 Commissariat Energie Atomique Procede de controle de positionnement relatif
US12002765B2 (en) * 2022-01-04 2024-06-04 Nanya Technology Corporation Marks for overlay measurement and overlay error correction

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US5861679A (en) * 1996-07-26 1999-01-19 Sony Corporation Pattern and method for measuring alignment error
JPH1123668A (ja) * 1997-07-04 1999-01-29 Sony Corp 配線不良検査回路
JP2003172601A (ja) * 2001-12-06 2003-06-20 Ricoh Co Ltd 半導体装置のアライメント誤差の測定用素子
JP2004303954A (ja) * 2003-03-31 2004-10-28 Denso Corp 半導体装置のｔｅｇパターンおよびｔｅｇパターンを使ったパターンずれの検査方法
US20080217613A1 (en) * 2007-03-07 2008-09-11 Nec Electronics Corporation Positional offset measurement pattern unit featuring via-plug and interconnections, and method using such positional offset measurement pattern unit

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JPH03270211A (ja) 1990-03-20 1991-12-02 Sumitomo Metal Ind Ltd マスクアライメントずれ検査用のトランジスタ
JP2000252340A (ja) 1999-03-02 2000-09-14 Sony Corp 接続精度測定方法および接続精度測定素子
JP2001093818A (ja) 1999-09-24 2001-04-06 Toshiba Corp 露光方法及びレチクル
JP4268951B2 (ja) * 2005-04-06 2009-05-27 Ｔｄｋ株式会社 ウェハにおける識別情報記入方法
JP2008283051A (ja) 2007-05-11 2008-11-20 Toshiba Corp 半導体記憶装置及び半導体記憶装置の製造方法
TW200913013A (en) 2007-07-30 2009-03-16 Hoya Corp Method of manufacturing a gray tone mask, gray tone mask, method of inspecting a gray tone mask, and method of transferring a pattern
JP2010114130A (ja) 2008-11-04 2010-05-20 Panasonic Corp 半導体装置及びその製造方法
NL2004545A (en) * 2009-06-09 2010-12-13 Asml Netherlands Bv Lithographic method and arrangement
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US5861679A (en) * 1996-07-26 1999-01-19 Sony Corporation Pattern and method for measuring alignment error
JPH1123668A (ja) * 1997-07-04 1999-01-29 Sony Corp 配線不良検査回路
JP2003172601A (ja) * 2001-12-06 2003-06-20 Ricoh Co Ltd 半導体装置のアライメント誤差の測定用素子
JP2004303954A (ja) * 2003-03-31 2004-10-28 Denso Corp 半導体装置のｔｅｇパターンおよびｔｅｇパターンを使ったパターンずれの検査方法
US20080217613A1 (en) * 2007-03-07 2008-09-11 Nec Electronics Corporation Positional offset measurement pattern unit featuring via-plug and interconnections, and method using such positional offset measurement pattern unit

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104835837A (zh) * 2015-06-05 2015-08-12 杭州士兰微电子股份有限公司 高压半导体器件及其制造方法
WO2017067458A1 (zh) * 2015-10-19 2017-04-27 京东方科技集团股份有限公司 测试组件单元、阵列基板、显示面板、显示装置以及制造阵列基板的方法
US10020328B2 (en) 2015-10-19 2018-07-10 Boe Technology Group Co., Ltd. Test element unit, array substrate, display panel, display apparatus, and method of manufacturing array substrate
CN109388030B (zh) * 2017-08-11 2020-09-15 联华电子股份有限公司 一组测试键布局结构与其布局图形对位失准的测量方法
CN109388030A (zh) * 2017-08-11 2019-02-26 联华电子股份有限公司 一组测试键布局结构与其布局图形对位失准的测量方法
CN110931380A (zh) * 2019-12-09 2020-03-27 上海华力微电子有限公司 测试方法
CN110931380B (zh) * 2019-12-09 2023-02-07 上海华力微电子有限公司 测试方法
CN111123070A (zh) * 2019-12-19 2020-05-08 黄石沪士电子有限公司 一种pcb防焊对位能力测试图形及方法
CN113834827A (zh) * 2020-06-24 2021-12-24 江苏长电科技股份有限公司 多层电路基板及其偏移检测方法
CN113834827B (zh) * 2020-06-24 2024-04-12 江苏长电科技股份有限公司 多层电路基板及其偏移检测方法
CN111721245A (zh) * 2020-06-30 2020-09-29 上海创功通讯技术有限公司 一种热压偏位检测设备和检测方法
CN112563150A (zh) * 2020-12-17 2021-03-26 成都海光微电子技术有限公司 提高芯片内器件性能均匀性的方法、装置及电子设备
CN112563150B (zh) * 2020-12-17 2023-04-25 成都海光微电子技术有限公司 提高芯片内器件性能均匀性的方法、装置及电子设备
CN113917802A (zh) * 2021-10-13 2022-01-11 杭州广立微电子股份有限公司 一种套刻误差的测量计算方法
CN119008594A (zh) * 2024-08-05 2024-11-22 成都海光微电子技术有限公司 一种半导体装置及工艺测试方法

Also Published As

Publication number Publication date
US9303969B2 (en) 2016-04-05
KR101301216B1 (ko) 2013-08-28
JP2011242774A (ja) 2011-12-01
KR20110126062A (ko) 2011-11-22
US8883523B2 (en) 2014-11-11
US20110279132A1 (en) 2011-11-17
US20150002173A1 (en) 2015-01-01
JP5624939B2 (ja) 2014-11-12

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Application publication date: 20111116