WO2018232834A1 - 阵列基板修补方法、阵列基板及液晶显示器 - Google Patents

阵列基板修补方法、阵列基板及液晶显示器 Download PDF

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WO2018232834A1
WO2018232834A1 PCT/CN2017/095092 CN2017095092W WO2018232834A1 WO 2018232834 A1 WO2018232834 A1 WO 2018232834A1 CN 2017095092 W CN2017095092 W CN 2017095092W WO 2018232834 A1 WO2018232834 A1 WO 2018232834A1
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pixel electrode
array substrate
main
drain
sub
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PCT/CN2017/095092
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English (en)
French (fr)
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王笑笑
徐向阳
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深圳市华星光电技术有限公司
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Publication of WO2018232834A1 publication Critical patent/WO2018232834A1/zh

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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136259—Repairing; Defects
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136227—Through-hole connection of the pixel electrode to the active element through an insulation layer
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
    • H01L27/1244—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits for preventing breakage, peeling or short circuiting

Definitions

  • the present invention relates to the field of liquid crystal display technologies, and in particular, to an array substrate repairing method, an array substrate, and a liquid crystal display.
  • LTPS Low Temperature Poly-Silicon
  • TFT Thin Film Transistor
  • the invention provides an array substrate repairing method with high repairing efficiency and short time.
  • the array substrate repairing method of the present invention includes
  • the pixel electrode and the common electrode line communication position are located at an overlapping portion of the pixel electrode and the common electrode line.
  • a repair line that spans the drain of the TFT switch is preset in the pixel of the array substrate, and the use of the repair line Light illuminates the drain of the TFT switch along the repair line to disconnect the pixel electrode of the pixel from the TFT.
  • the pixel electrode includes a main pixel electrode, a sub-pixel electrode, a main TFT switch and a sub-TFT switch; the sub-pixel electrode is connected to a drain of the sub-switch, and the TFT switch is the main TFT switch.
  • the region where the main pixel electrode is located forms a via hole, and the via hole is connected to the drain of the main switch, and the repair line is formed between the via hole and the main switch across the drain.
  • the common electrode line and the pixel electrode are located in different layers and have the same potential.
  • the common electrode is formed under the main pixel electrode and the sub-pixel electrode.
  • the material of the pixel electrode and the common electrode are all ITO.
  • the array substrate of the present invention includes a glass substrate, a TFT switch formed on the glass substrate, a common electrode line, and a pixel electrode layer, the TFT includes a source and a drain, the drain is disconnected from the pixel electrode, and A pixel electrode is connected to the common electrode line.
  • the liquid crystal display of the present invention comprises an array substrate, a color filter substrate and a display medium layer sandwiched between the color filter substrate, and a backlight module for providing a light source for the liquid crystal display.
  • the array substrate repairing method of the present invention only needs to illuminate the drain of the TFT switch along the repair line to detect the pixel electrode of the pixel and the TFT when the common electrode is short-circuited with the pixel electrode line. Disconnected, not only can repair the pixel of the array substrate, such as light leakage, dark spots and other anomalies; and improve the efficiency of the repair site, low laser machine loss, for large batches of bad repair, the repair method can greatly reduce the repair time, low Repair costs.
  • FIG. 1 is a schematic side view showing the structure of a liquid crystal display of the present invention
  • FIG. 2 is a top plan view of a pixel electrode of an array substrate according to a preferred embodiment of the present invention, which is a perspective view, and different hatching lines represent different layers;
  • FIG. 3 is a flow chart of a method for repairing an array substrate according to the present invention.
  • the patterned patterning process described in the present application includes a patterning process such as film formation, development, exposure, etching, and the like.
  • FIG. 1 it is a side view of a liquid crystal display according to an embodiment of the present invention.
  • the display panel includes an array substrate 11 , a display medium layer 12 , and a color filter substrate 13 which are sequentially stacked.
  • a backlight module that provides a light source for the liquid crystal display is also included.
  • the array substrate 11 and the color filter substrate 13 are provided with a plurality of display elements (not shown) for generating an electric field to drive the display medium layer 12 for image display.
  • the display medium layer 12 is a liquid crystal molecular layer, that is, the display panel 10 in the present embodiment is described by taking a liquid crystal display (LCD) as an example.
  • LCD liquid crystal display
  • the array substrate 11 includes a glass substrate, a TFT switch formed on the glass substrate, a common electrode line, and a pixel electrode layer.
  • the TFT includes a source and a drain, and the array substrate further includes a gate formed on the glass substrate and covered. a gate insulating layer of the gate electrode, the TFT switch being formed on the gate insulating layer covering the insulating layer of the TFT switch.
  • the common electrode line layer and the pixel electrode layer are sequentially formed on the insulating layer and spaced by a flat layer.
  • the array substrate 11 includes a plurality of pixel regions, a plurality of gate lines, and a plurality of data lines formed on the substrate, and the gate lines and the data lines intersect to form pixels.
  • the pixel area is understood to be one R sub-pixel area, or a B sub-pixel area or a G sub-pixel area in one pixel.
  • a pixel area B is taken as an example.
  • Each pixel area B includes a main sub-pixel area and a sub-sub-pixel area.
  • the main sub-pixel area is provided with a main sub-pixel electrode
  • the second sub-pixel area is provided with a second sub-pixel.
  • Pixel electrode In this embodiment, the pixel area further includes an open area, and the open area is a light-transmitting area, which refers to a position corresponding to a pixel between the horizontal surface of the array substrate and the black matrix disposed on the color filter substrate.
  • the drain is disconnected from the pixel electrode, and a pixel electrode is connected to the common electrode line.
  • the portion of the drain connected to the through hole is separated by a repair line, and the repair The fill line is formed by a cut formed by laser cutting.
  • the pixel includes a pixel electrode, and the pixel electrode includes a main pixel electrode 21, a sub-pixel electrode 22, a main TFT switch 23, and a sub-TFT switch 24; the sub-pixel electrode 22 and a drain of the sub-switch 24 Connected, the TFT switch is the main TFT switch.
  • the secondary switch 24 provides a voltage to the secondary pixel electrode 22.
  • the drain electrode 231 of the main switch is disconnected from the pixel electrode (main pixel electrode 21), and the main pixel electrode 21) is connected to the common electrode line 25.
  • the main pixel electrode 21 region forms a via hole 210, the via hole 210 is connected to the drain electrode 231 of the main switch 23, and a repair line 233 is formed between the via hole 210 and the main switch 23
  • the drain electrode 231 turns off the pixel electrode and the common electrode line 25.
  • the repair line 233 is formed by a cut formed by laser cutting.
  • the common electrode 25 is located in a different layer from the pixel electrode and has the same potential.
  • the common electrode 25 is formed under the main pixel electrode 21 and the sub-pixel electrode 22.
  • the material of the pixel electrode and the common electrode and the trace are all ITO.
  • the pixel further includes an auxiliary TFT switch, and the auxiliary TFT switch is located on one side of the main TFT switch and the sub-TFT switch, and is connected to the sub-pixel electrode.
  • the portion between the drain and the via hole connecting the pixel is cut along the position of the repair line 233 by the laser, and the pixel can be charged by using the common electrode line and the pixel electrode.
  • the TFT switch 23 is disconnected from the main pixel electrode, and is not charged by the TFT switch 23, while the common electrode line and the pixel electrode maintain a uniform voltage.
  • the array substrate can be repaired by laser cutting to avoid defects of dark spots, ensuring quality and reducing cost.
  • the present application provides a method for repairing the above array substrate, which is used to compensate for defects such as light leakage and two points generated on a pixel in an array substrate manufacturing process.
  • the method includes the following steps:
  • step S1 the pixel electrode of the pixel on the array substrate and the TFT of the array substrate are disconnected;
  • Step S2 connecting the pixel electrode and the common electrode line on the array substrate.
  • a repair line 233 that spans the drain 231 of the TFT switch 23 is preset within the pixels of the array substrate.
  • the repair line 233 spans a portion between the drain 231 and the via 210 connecting the pixels 20 across the drain 231.
  • the repair line 233 may be formed simultaneously with an insulating layer covering the drain electrode 231. It can also be formed when the common electrode or the pixel electrode is formed.
  • the pixel electrode and the common electrode line communication position are located at an overlapping portion of the pixel electrode and the common electrode line, and the portion may be located in the main sub-pixel region and Between the sub-subpixel regions, it is also possible to be located between the pixel electrode and the data line.
  • the pixel electrode and the common electrode line communication position are located on the side of the via 210 between the main sub-pixel region and the second sub-pixel region.
  • the laser is used to illuminate the drain 231 of the TFT switch along the repair line 233 to disconnect the pixel electrode of the pixel from the TFT switch 23. And then connect the pixel electrode to the common electrode line.
  • the aforementioned open circuit fault also includes the wiring area of the common electrode being shorted to the pixel electrode.
  • the pixel electrode is disconnected from the TFT switch and communicates with the common electrode line, so that the pixel electrode is kept in line with the potential of the common electrode on the color filter substrate, so that the liquid crystal layer corresponding to the pixel electrode is not deflected, so that the pixel remains in a dark state; After a single point is darkened, it does not affect the display of the panel.
  • This repair method can not only repair the light leakage, dark spots and other abnormalities of the pixels of the array substrate; but also improve the efficiency of the repairing station, low laser machine loss, and the repair method can greatly reduce the repair time and low repair for large batches of bad repairs. cost.

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Abstract

阵列基板（11）修补方法包括断开阵列基板（11）上像素的像素电极与阵列基板（11）的TFT开关（23）；连通像素电极与阵列基板（11）上公共电极线（25）。

Description

阵列基板修补方法、阵列基板及液晶显示器
本发明要求2017年6月20日递交的发明名称为“阵列基板修补方法、阵列基板及液晶显示器”的申请号201710471354.8的在先申请优先权，上述在先申请的内容以引入的方式并入本文本中。
技术领域
本发明涉及液晶显示屏技术领域，尤其涉及一种阵列基板修补方法及阵列基板以及液晶显示器。
背景技术
近年来，以低温多晶硅(Low Temperature Poly-Silicon，LTPS)作为阵列基板内薄膜晶体管(Thin Film Transistor，TFT)的半导体层的液晶显示面板在中高端小尺寸产品中获得了越来越多的应用，多个知名品牌的智能手机、平板电脑等产品均使用LTPS液晶显示面板。LTPS液晶显示面板具有高分辨率、反应速度快、高亮度低功耗等优点。
随着技术的不断进步，分辨率的提高对像素开口率提出更高的要求。要做到更大的开口率，要对各层金属的线宽线距进行压缩，让空间给像素开口区。线距压缩，同层相邻但不同电位的金属线短路的风险增加，通常是公共电极与像素电极发生短路，造成对像素亮度的影响，需要对像素做暗点化处理。
发明内容
本发明提供一种修补效率高、时间短的阵列基板修补方法。
本发明所述的阵列基板修补方法包括，
断开阵列基板上像素的像素电极与所述阵列基板的TFT开关；
连通所述像素电极与所述阵列基板上公共电极线。
其中，所述像素电极与公共电极线连通位置位于所述像素电极与公共电极线重叠部分。
其中，在阵列基板的像素内预设横跨TFT开关的漏极的修补线，使用激 光沿着修补线照射所述TFT开关的漏极以使所述像素的像素电极与所述TFT断开。
其中，所述像素电极包括主像素电极、次像素电极、主TFT开关及次TFT开关；所述次像素电极与所述次开关的漏极连接，所述TFT开关即为所述主TFT开关。
其中，所述主像素电极所在区域形成过孔，所述过孔连接所述主开关的漏极，所述修补线形成于所述过孔与所述主开关之间横跨所述漏极。
其中，所述公共电极线与像素电极位于不同层且电位相同。
其中，所述公共电极形成于所述主像素电极及次像素电极下方。
其中，所述像素电极及公共电极的材料均为ITO。
本发明所述的阵列基板，包括玻璃基板，形成于玻璃基板的TFT开关、公共电极线及像素电极层，所述TFT包括源极和漏极，所述漏极与所述像素电极断路，并且像素电极与所述公共电极线连接。
本发明所述的液晶显示器，包括阵列基板、彩膜基板及夹持于彩膜基板的显示介质层，还包括为所述液晶显示器提供光源的背光模组。
本发明所述的阵列基板修补方法只需要当检测到公共电极与像素电极线短接时，使用激光沿着修补线照射所述TFT开关的漏极以使所述像素的像素电极与所述TFT断开即可，不仅可以修复阵列基板的像素发生漏光，暗点等异常；而且提高修补站点的效率，低激光机台损耗，对于大批量的不良修补，该修补方式能大大减少修补时间、低修补成本。
附图说明
为了更清楚地说明本发明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1为本发明液晶显示器的侧面结构示意图；
图2为本发明较佳实施方式的阵列基板的像素电极俯视结构示意图，属于透视图，不同的剖面线代表不同的层；
图3为本发明所述阵列基板修补方法流程图。
具体实施方式
下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。本申请所述的图案化构图工艺包括成膜、显影、曝光、蚀刻等构图工艺。
如图1所示，其为本发明一实施例中液晶显示器的侧面结构示意图，显示面板包括依次层叠设置的阵列基板11、显示介质层12以及彩膜基板13。还包括为所述液晶显示器提供光源的背光模组。其中，阵列基板11与彩膜基板13上设置有多个显示元件(图未示)，所示多个显示元件用于产生电场驱动显示介质层12进行图像显示。本实施例中，显示介质层12为液晶分子层，也即是本实施中显示面板10以液晶显示面板(Liquid Crystal Display,LCD)为例进行说明。
所述阵列基板11包括玻璃基板，形成于玻璃基板的TFT开关、公共电极线及像素电极层，所述TFT包括源极和漏极，所述阵列基板还包括形成于玻璃基板的栅极、覆盖栅极的栅极绝缘层，所述TFT开关形成于栅极绝缘层，覆盖TFT开关的绝缘层。所述公共电极线层与像素电极层依次形成于绝缘层并通过一平坦层间隔。
所述阵列基板11包括形成于所述基板上的多个像素区域、多条栅极线及多条数据线，所述栅极线和数据线交叉构成像素。所述像素区域理解为一个像素中的一个R子像素区域、或者B子像素区域或者G子像素区域。本实施例中以一个像素区域B为例进行说明，每一像素区域B包括主子像素区域和次子像素区域，所述主子像素区域设有主子像素电极，所述次子像素区域设有次子像素电极。本实施例中，所述像素区域还包括开口区，开口区为透光区，是指阵列基板水平面上与彩膜基板设置的黑色矩阵之间的像素相对应的位置。
如图2所示，所述漏极与所述像素电极断路，并且像素电极与所述公共电极线连接。本实施例中，所述漏极与通孔连接的部分被一修补线分隔，所述修 补线为激光切割形成的切痕形成。
具体的，所述像素包括像素电极，所述像素电极包括主像素电极21、次像素电极22、主TFT开关23及次TFT开关24；所述次像素电极22与所述次开关24的漏极连接，所述TFT开关即为所述主TFT开关。所述次开关24为次像素电极22提供电压。所述主开关的漏极231与所述像素电极(主像素电极21)断路，并且主像素电极21)与所述公共电极线25连接。
所述主像素电极21区域形成过孔210，所述过孔210连接所述主开关23的漏极231，修补线233形成于所述过孔210与所述主开关23之间横跨所述漏极231一断开像素电极与公共电极线25。所述修补线233为激光切割形成的切痕形成。其中，所述公共电极25的与像素电极位于不同层且电位相同。所述公共电极25形成于所述主像素电极21及次像素电极22下方。所述像素电极及公共电极及走线的材料均为ITO。所述像素还包括辅助TFT开关，所述辅助TFT开关位于主TFT开关及次TFT开关一侧，与所述次像素电极连接。
当检测到阵列基板存在断路时，通过激光沿着所述修补线233位置将漏极与连接像素的过孔之间的部分切断，就可以利用公共电极线和像素电极实现为像素充电，而将TFT开关23与主像素电极断开，不用TFT开关23进行充电，而公共电极线和像素电极保持一致的电压。所述阵列基板通过一次激光切割修补即可避免出现暗点的缺陷，保证质量同时减小成本。
本申请提供一种对上述阵列基板的修补方法，用于弥补阵列基板制造过程中对像素产生的漏光、两点等缺陷。
所述方法包括如下步骤：
请参阅图2与图3，步骤S1，断开阵列基板上像素的像素电极与所述阵列基板的TFT；
步骤S2，连通所述像素电极与所述阵列基板上公共电极线。
具体的，在阵列基板的像素内预设横跨TFT开关23的漏极231的修补线233。所述修补线233横跨所述漏极231将漏极231与连接像素20的过孔210之间的部分。所述修补线233可与覆盖漏极231的绝缘层同时形成。也可以在公共电极或者像素电极形成时形成。其中，所述像素电极与公共电极线连通位置位于所述像素电极与公共电极线重叠部分，该部分可能位于主子像素区域和 次子像素区域之间，也可能位于像素电极与数据线之间位置。本实施例中，所述像素电极与公共电极线连通位置位于主子像素区域和次子像素区域之间过孔210一侧。
当检测到阵列基板的出现一些由断路或断路引起的不良公时，使用激光沿着修补线233照射所述TFT开关的漏极231以使所述像素的像素电极与所述TFT开关23断开，再将像素电极与公共电极线连通。前述断路故障也包含公共电极的走线区域与像素电极短接。像素电极与TFT开关断开并与公共电极线连通，从而让像素电极保持跟彩膜基板上公共电极的电位一致，使得与该像素电极对应区域的液晶层不偏转，使该像素保持暗态；单点变暗后并不会影响面板的显示效果。
这种修补方法不仅可以修复阵列基板的像素发生漏光，暗点等异常；而且提高修补站点的效率，低激光机台损耗，对于大批量的不良修补，该修补方式能大大减少修补时间、低修补成本。
以上所揭露的仅为本发明一种较佳实施例而已，当然不能以此来限定本发明之权利范围，本领域普通技术人员可以理解实现上述实施例的全部或部分流程，并依本发明权利要求所作的等同变化，仍属于发明所涵盖的范围。

Claims (17)

  1. 一种阵列基板修补方法，其中，所述方法包括，
    断开阵列基板上像素的像素电极与所述阵列基板的TFT开关；
    连通所述像素电极与所述阵列基板上公共电极线。
  2. 如权利要求1所述的阵列基板修补方法，其中，所述像素电极与公共电极线连通位置位于所述像素电极与公共电极线重叠部分。
  3. 如权利要求1所述的阵列基板修补方法，其中，在阵列基板的像素内预设横跨TFT开关的漏极的修补线，使用激光沿着修补线照射所述TFT开关的漏极以使所述像素的像素电极与所述TFT断开。
  4. 如权利要求3所述的阵列基板修补方法，其中，所述像素电极包括主像素电极、次像素电极、主TFT开关及次TFT开关；所述次像素电极与所述次开关的漏极连接，所述TFT开关即为所述主TFT开关。
  5. 如权利要求4所述的阵列基板修补方法，其中，所述主像素电极所在区域形成过孔，所述过孔连接所述主开关的漏极，所述修补线形成于所述过孔与所述主开关之间横跨所述漏极。
  6. 如权利要求1所述的阵列基板修补方法，其中，所述公共电极线与像素电极位于不同层且电位相同。
  7. 如权利要求4所述的阵列基板修补方法，其中，所述公共电极形成于所述主像素电极及次像素电极下方。
  8. 如权利要求1所述的阵列基板修补方法，其中，所述像素电极及公共电极的材料均为ITO。
  9. 一种阵列基板，其中，包括玻璃基板，形成于玻璃基板的TFT开关、公共电极线及像素电极层，所述TFT包括源极和漏极，所述漏极与所述像素电极断路，并且像素电极与所述公共电极线连接。
  10. 如权利要求9所述的阵列基板，其中，所述像素电极与公共电极线连通位置位于所述像素电极与公共电极线重叠部分。
  11. 如权利要求10所述的阵列基板，其中，所述像素电极包括主像素电极、次像素电极、主TFT开关及次TFT开关；所述次像素电极与所述次开关 的漏极连接，所述TFT开关即为所述主TFT开关。
  12. 如权利要求11所述的阵列基板，其中，所述主像素电极所在区域形成过孔，所述过孔连接所述主开关的漏极，所述修补线形成于所述过孔与所述主开关之间横跨所述漏极。
  13. 如权利要求11所述的阵列基板修补方法，其中，所述公共电极形成于所述主像素电极及次像素电极下方。
  14. 一种液晶显示器，其中，包括阵列基板、彩膜基板及夹持于彩膜基板的显示介质层，还包括为所述液晶显示器提供光源的背光模组；所述阵列基板包括玻璃基板，形成于玻璃基板的TFT开关、公共电极线及像素电极层，所述TFT包括源极和漏极，所述漏极与所述像素电极断路，并且像素电极与所述公共电极线连接。
  15. 如权利要求14所述的液晶显示器，其中，所述像素电极与公共电极线连通位置位于所述像素电极与公共电极线重叠部分。
  16. 如权利要求14所述的液晶显示器，其中，所述像素电极包括主像素电极、次像素电极、主TFT开关及次TFT开关；所述次像素电极与所述次开关的漏极连接，所述TFT开关即为所述主TFT开关。
  17. 如权利要求16所述的液晶显示器，其中，所述主像素电极所在区域形成过孔，所述过孔连接所述主开关的漏极，所述修补线形成于所述过孔与所述主开关之间横跨所述漏极。
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