JP5611884B2 - エッチング方法、エッチング装置および記憶媒体 - Google Patents

エッチング方法、エッチング装置および記憶媒体 Download PDF

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Publication number
JP5611884B2
JP5611884B2 JP2011090256A JP2011090256A JP5611884B2 JP 5611884 B2 JP5611884 B2 JP 5611884B2 JP 2011090256 A JP2011090256 A JP 2011090256A JP 2011090256 A JP2011090256 A JP 2011090256A JP 5611884 B2 JP5611884 B2 JP 5611884B2
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substrate
supplying
etching
silylating agent
etching solution
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Japanese (ja)
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JP2012222330A (ja
JP2012222330A5 (enExample
Inventor
辺 司 渡
辺 司 渡
頭 佳 祐 江
頭 佳 祐 江
子 都 金
子 都 金
居 武 彦 折
居 武 彦 折
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Priority to JP2011090256A priority Critical patent/JP5611884B2/ja
Priority to US13/443,156 priority patent/US8969218B2/en
Priority to TW101113043A priority patent/TWI494990B/zh
Priority to KR1020120038571A priority patent/KR101523348B1/ko
Publication of JP2012222330A publication Critical patent/JP2012222330A/ja
Publication of JP2012222330A5 publication Critical patent/JP2012222330A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0422—Apparatus for fluid treatment for etching for wet etching
    • H10P72/0424—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
    • H10P14/6546—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials to change the surface groups of the insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/69215—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material being a silicon oxide, e.g. SiO2

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  • Weting (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
JP2011090256A 2011-04-14 2011-04-14 エッチング方法、エッチング装置および記憶媒体 Active JP5611884B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2011090256A JP5611884B2 (ja) 2011-04-14 2011-04-14 エッチング方法、エッチング装置および記憶媒体
US13/443,156 US8969218B2 (en) 2011-04-14 2012-04-10 Etching method, etching apparatus and storage medium
TW101113043A TWI494990B (zh) 2011-04-14 2012-04-12 蝕刻方法、蝕刻裝置及記憶媒體
KR1020120038571A KR101523348B1 (ko) 2011-04-14 2012-04-13 에칭 방법, 에칭 장치 및 기억 매체

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011090256A JP5611884B2 (ja) 2011-04-14 2011-04-14 エッチング方法、エッチング装置および記憶媒体

Publications (3)

Publication Number Publication Date
JP2012222330A JP2012222330A (ja) 2012-11-12
JP2012222330A5 JP2012222330A5 (enExample) 2013-06-06
JP5611884B2 true JP5611884B2 (ja) 2014-10-22

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JP2011090256A Active JP5611884B2 (ja) 2011-04-14 2011-04-14 エッチング方法、エッチング装置および記憶媒体

Country Status (4)

Country Link
US (1) US8969218B2 (enExample)
JP (1) JP5611884B2 (enExample)
KR (1) KR101523348B1 (enExample)
TW (1) TWI494990B (enExample)

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JP5490071B2 (ja) 2011-09-12 2014-05-14 株式会社東芝 エッチング方法
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KR101828437B1 (ko) * 2017-04-06 2018-03-29 주식회사 디엔에스 실리콘 질화막 식각용 조성물.
KR102441238B1 (ko) * 2017-09-14 2022-09-08 주식회사 이엔에프테크놀로지 실리콘 질화막에 대한 선택적 에칭을 위한 식각 조성물 및 이를 이용한 식각 방법
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Also Published As

Publication number Publication date
KR20120117682A (ko) 2012-10-24
US20120264308A1 (en) 2012-10-18
TW201306115A (zh) 2013-02-01
TWI494990B (zh) 2015-08-01
JP2012222330A (ja) 2012-11-12
KR101523348B1 (ko) 2015-05-27
US8969218B2 (en) 2015-03-03

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