KR101523348B1 - 에칭 방법, 에칭 장치 및 기억 매체 - Google Patents

에칭 방법, 에칭 장치 및 기억 매체 Download PDF

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KR101523348B1
KR101523348B1 KR1020120038571A KR20120038571A KR101523348B1 KR 101523348 B1 KR101523348 B1 KR 101523348B1 KR 1020120038571 A KR1020120038571 A KR 1020120038571A KR 20120038571 A KR20120038571 A KR 20120038571A KR 101523348 B1 KR101523348 B1 KR 101523348B1
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South Korea
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substrate
supplying
silylating agent
etchant
etching
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KR20120117682A (ko
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츠카사 와타나베
케이스케 에가시라
미야코 가네코
타케히코 오리이
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도쿄엘렉트론가부시키가이샤
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0422—Apparatus for fluid treatment for etching for wet etching
    • H10P72/0424—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
    • H10P14/6546—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials to change the surface groups of the insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/69215—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material being a silicon oxide, e.g. SiO2

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  • Weting (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
KR1020120038571A 2011-04-14 2012-04-13 에칭 방법, 에칭 장치 및 기억 매체 Active KR101523348B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2011090256A JP5611884B2 (ja) 2011-04-14 2011-04-14 エッチング方法、エッチング装置および記憶媒体
JPJP-P-2011-090256 2011-04-14

Publications (2)

Publication Number Publication Date
KR20120117682A KR20120117682A (ko) 2012-10-24
KR101523348B1 true KR101523348B1 (ko) 2015-05-27

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US (1) US8969218B2 (enExample)
JP (1) JP5611884B2 (enExample)
KR (1) KR101523348B1 (enExample)
TW (1) TWI494990B (enExample)

Families Citing this family (38)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012074601A (ja) * 2010-09-29 2012-04-12 Dainippon Screen Mfg Co Ltd 基板処理装置および基板処理方法
JP5782279B2 (ja) * 2011-01-20 2015-09-24 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置
KR101550255B1 (ko) * 2011-05-10 2015-09-04 가부시키가이샤 후지킨 유량 모니터 부착 압력식 유량 제어 장치와, 이것을 사용한 유체 공급계의 이상 검출 방법 및 모니터 유량 이상 시의 처치 방법
JP5490071B2 (ja) 2011-09-12 2014-05-14 株式会社東芝 エッチング方法
JP6242057B2 (ja) 2013-02-15 2017-12-06 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置
US20140231012A1 (en) * 2013-02-15 2014-08-21 Dainippon Screen Mfg, Co., Ltd. Substrate processing apparatus
KR102057220B1 (ko) * 2013-02-19 2020-01-22 삼성전자주식회사 약액 공급기, 약액 공급기를 구비하는 기판 처리 장치 및 이를 이용한 기판의 처리방법
JP6400919B2 (ja) * 2013-03-07 2018-10-03 芝浦メカトロニクス株式会社 基板処理装置及び基板処理方法
JP2015070080A (ja) * 2013-09-27 2015-04-13 東京エレクトロン株式会社 エッチング方法、エッチング装置および記憶媒体
KR102152909B1 (ko) * 2013-12-31 2020-09-07 세메스 주식회사 기판처리방법
US9868902B2 (en) 2014-07-17 2018-01-16 Soulbrain Co., Ltd. Composition for etching
JP6420707B2 (ja) * 2015-04-07 2018-11-07 東京エレクトロン株式会社 基板処理方法および基板処理装置
JP6419053B2 (ja) * 2015-10-08 2018-11-07 東京エレクトロン株式会社 基板処理方法および基板処理装置
US9875907B2 (en) * 2015-11-20 2018-01-23 Applied Materials, Inc. Self-aligned shielding of silicon oxide
US10867814B2 (en) * 2016-02-15 2020-12-15 Tokyo Electron Limited Liquid processing method, substrate processing apparatus, and storage medium
JP6236105B2 (ja) * 2016-03-04 2017-11-22 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置
JP6773495B2 (ja) * 2016-09-15 2020-10-21 株式会社Ｓｃｒｅｅｎホールディングス エッチング装置、基板処理装置、エッチング方法および基板処理方法
JP7078616B2 (ja) * 2016-12-26 2022-05-31 ソウルブレイン シーオー．， エルティーディー． エッチング用組成物およびこれを用いた半導体素子の製造方法
KR101828437B1 (ko) * 2017-04-06 2018-03-29 주식회사 디엔에스 실리콘 질화막 식각용 조성물.
KR102441238B1 (ko) * 2017-09-14 2022-09-08 주식회사 이엔에프테크놀로지 실리콘 질화막에 대한 선택적 에칭을 위한 식각 조성물 및 이를 이용한 식각 방법
US10163623B1 (en) * 2017-10-31 2018-12-25 Taiwan Semiconductor Manufacturing Co., Ltd. Etch method with surface modification treatment for forming semiconductor structure
KR102484977B1 (ko) * 2017-12-28 2023-01-09 오씨아이 주식회사 식각 조성물 및 이를 이용한 식각 방법
KR102557642B1 (ko) * 2018-10-25 2023-07-20 에스케이이노베이션 주식회사 식각 조성물 첨가제, 그 제조방법 및 이를 포함하는 식각 조성물
JP7446097B2 (ja) * 2019-12-06 2024-03-08 東京応化工業株式会社 表面処理剤及び表面処理方法
JP7521895B2 (ja) * 2019-12-27 2024-07-24 芝浦メカトロニクス株式会社 基板処理方法および基板処理装置
CN113496891B (zh) * 2020-04-03 2023-03-14 重庆超硅半导体有限公司 一种集成电路硅片表面氧化膜自适应均匀腐蚀方法
US12125708B2 (en) * 2020-04-10 2024-10-22 Hitachi High-Tech Corporation Etching method
CN113322071A (zh) * 2021-05-28 2021-08-31 长江存储科技有限责任公司 刻蚀用组合物及其使用方法
CN119452061A (zh) * 2022-05-13 2025-02-14 恩特格里斯公司 氮化硅蚀刻组合物和方法
US20250343040A1 (en) * 2022-06-02 2025-11-06 Central Glass Company, Limited Substrate processing method and substrate production method
WO2023234370A1 (ja) * 2022-06-02 2023-12-07 セントラル硝子株式会社 基材の処理方法、および基材の製造方法
CN114713465A (zh) * 2022-06-08 2022-07-08 上海图双精密装备有限公司 一种自动涂胶机构
JP2024124744A (ja) * 2023-03-03 2024-09-13 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置
US12494375B2 (en) * 2023-08-30 2025-12-09 Tokyo Electron Limited Method to selectively etch silicon nitride to silicon oxide using surface alkylation
JP2025051142A (ja) * 2023-09-25 2025-04-04 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法
JP2025051143A (ja) * 2023-09-25 2025-04-04 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法と基板処理装置
WO2025105151A1 (en) * 2023-11-13 2025-05-22 Fujifilm Corporation Method of manufacturing treated substrate and method of manufacturing semiconductor
WO2026014135A1 (ja) * 2024-07-12 2026-01-15 セントラル硝子株式会社 半導体装置の製造方法、基材、およびシリル化組成物

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20070019774A (ko) * 2004-07-02 2007-02-15 동경 엘렉트론 주식회사 반도체 디바이스의 제조 방법
KR20080089296A (ko) * 2007-03-30 2008-10-06 가부시끼가이샤 르네사스 테크놀로지 레지스트 패턴의 형성 방법과 그 방법에 의해 제조한반도체 디바이스
KR20090130828A (ko) * 2008-06-16 2009-12-24 가부시끼가이샤 도시바 반도체 기판의 표면 처리 방법

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1481284A4 (en) * 2002-03-04 2006-10-25 Tokyo Electron Ltd METHOD FOR PASSIVATING LOW DIELECTRIC MATERIALS IN WELDING PROCESSING
US20040140365A1 (en) 2002-12-26 2004-07-22 Dainippon Screen Mfg. Co., Ltd. Substrate treating apparatus
JP4001575B2 (ja) 2002-12-26 2007-10-31 大日本スクリーン製造株式会社 基板処理装置
JP2007134690A (ja) * 2005-10-11 2007-05-31 Toshiba Corp 半導体装置の製造方法および半導体装置の製造に用いられる薬液
US7959975B2 (en) * 2007-04-18 2011-06-14 Micron Technology, Inc. Methods of patterning a substrate
JP2010027952A (ja) * 2008-07-23 2010-02-04 Toshiba Corp 半導体装置の製造方法
JP4708465B2 (ja) * 2008-10-21 2011-06-22 東京エレクトロン株式会社 半導体装置の製造方法及び半導体装置の製造装置
JP5195394B2 (ja) * 2008-12-19 2013-05-08 東ソー株式会社 エッチング液の再生方法
JP5377052B2 (ja) * 2009-04-17 2013-12-25 株式会社東芝 半導体装置の製造方法
JP2011009277A (ja) * 2009-06-23 2011-01-13 Toshiba Corp 基板洗浄装置および基板洗浄方法
JP5361790B2 (ja) * 2010-04-28 2013-12-04 株式会社東芝 半導体基板の表面処理方法
US20120083127A1 (en) * 2010-09-30 2012-04-05 Tokyo Electron Limited Method for forming a pattern and a semiconductor device manufacturing method
JP5782279B2 (ja) * 2011-01-20 2015-09-24 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20070019774A (ko) * 2004-07-02 2007-02-15 동경 엘렉트론 주식회사 반도체 디바이스의 제조 방법
KR20080089296A (ko) * 2007-03-30 2008-10-06 가부시끼가이샤 르네사스 테크놀로지 레지스트 패턴의 형성 방법과 그 방법에 의해 제조한반도체 디바이스
KR20090130828A (ko) * 2008-06-16 2009-12-24 가부시끼가이샤 도시바 반도체 기판의 표면 처리 방법

Also Published As

Publication number Publication date
KR20120117682A (ko) 2012-10-24
US20120264308A1 (en) 2012-10-18
TW201306115A (zh) 2013-02-01
TWI494990B (zh) 2015-08-01
JP2012222330A (ja) 2012-11-12
JP5611884B2 (ja) 2014-10-22
US8969218B2 (en) 2015-03-03

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