KR101523348B1 - 에칭 방법, 에칭 장치 및 기억 매체 - Google Patents

에칭 방법, 에칭 장치 및 기억 매체 Download PDF

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KR101523348B1
KR101523348B1 KR1020120038571A KR20120038571A KR101523348B1 KR 101523348 B1 KR101523348 B1 KR 101523348B1 KR 1020120038571 A KR1020120038571 A KR 1020120038571A KR 20120038571 A KR20120038571 A KR 20120038571A KR 101523348 B1 KR101523348 B1 KR 101523348B1
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substrate
supplying
silylating agent
etchant
etching
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KR20120117682A (ko
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츠카사 와타나베
케이스케 에가시라
미야코 가네코
타케히코 오리이
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도쿄엘렉트론가부시키가이샤
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67075—Apparatus for fluid treatment for etching for wet etching
    • H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H01L21/02359—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment to change the surface groups of the insulating layer

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Weting (AREA)
KR1020120038571A 2011-04-14 2012-04-13 에칭 방법, 에칭 장치 및 기억 매체 Active KR101523348B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2011090256A JP5611884B2 (ja) 2011-04-14 2011-04-14 エッチング方法、エッチング装置および記憶媒体
JPJP-P-2011-090256 2011-04-14

Publications (2)

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KR20120117682A KR20120117682A (ko) 2012-10-24
KR101523348B1 true KR101523348B1 (ko) 2015-05-27

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US (1) US8969218B2 (enExample)
JP (1) JP5611884B2 (enExample)
KR (1) KR101523348B1 (enExample)
TW (1) TWI494990B (enExample)

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KR101599343B1 (ko) * 2011-05-10 2016-03-03 가부시키가이샤 후지킨 유량 모니터 부착 압력식 유량 제어 장치
JP5490071B2 (ja) * 2011-09-12 2014-05-14 株式会社東芝 エッチング方法
US20140231012A1 (en) * 2013-02-15 2014-08-21 Dainippon Screen Mfg, Co., Ltd. Substrate processing apparatus
JP6242057B2 (ja) 2013-02-15 2017-12-06 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置
KR102057220B1 (ko) * 2013-02-19 2020-01-22 삼성전자주식회사 약액 공급기, 약액 공급기를 구비하는 기판 처리 장치 및 이를 이용한 기판의 처리방법
JP6400919B2 (ja) * 2013-03-07 2018-10-03 芝浦メカトロニクス株式会社 基板処理装置及び基板処理方法
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JP6236105B2 (ja) * 2016-03-04 2017-11-22 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置
JP6773495B2 (ja) * 2016-09-15 2020-10-21 株式会社Ｓｃｒｅｅｎホールディングス エッチング装置、基板処理装置、エッチング方法および基板処理方法
JP7078616B2 (ja) * 2016-12-26 2022-05-31 ソウルブレイン シーオー．， エルティーディー． エッチング用組成物およびこれを用いた半導体素子の製造方法
KR101828437B1 (ko) * 2017-04-06 2018-03-29 주식회사 디엔에스 실리콘 질화막 식각용 조성물.
KR102441238B1 (ko) * 2017-09-14 2022-09-08 주식회사 이엔에프테크놀로지 실리콘 질화막에 대한 선택적 에칭을 위한 식각 조성물 및 이를 이용한 식각 방법
US10163623B1 (en) * 2017-10-31 2018-12-25 Taiwan Semiconductor Manufacturing Co., Ltd. Etch method with surface modification treatment for forming semiconductor structure
KR102484977B1 (ko) * 2017-12-28 2023-01-09 오씨아이 주식회사 식각 조성물 및 이를 이용한 식각 방법
KR102557642B1 (ko) * 2018-10-25 2023-07-20 에스케이이노베이션 주식회사 식각 조성물 첨가제, 그 제조방법 및 이를 포함하는 식각 조성물
JP7446097B2 (ja) * 2019-12-06 2024-03-08 東京応化工業株式会社 表面処理剤及び表面処理方法
JP7521895B2 (ja) * 2019-12-27 2024-07-24 芝浦メカトロニクス株式会社 基板処理方法および基板処理装置
CN113496891B (zh) * 2020-04-03 2023-03-14 重庆超硅半导体有限公司 一种集成电路硅片表面氧化膜自适应均匀腐蚀方法
KR102590870B1 (ko) * 2020-04-10 2023-10-19 주식회사 히타치하이테크 에칭 방법
CN113322071A (zh) * 2021-05-28 2021-08-31 长江存储科技有限责任公司 刻蚀用组合物及其使用方法
US20230365863A1 (en) * 2022-05-13 2023-11-16 Entegris, Inc. Silicon nitride etching compositions and method
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CN114713465A (zh) * 2022-06-08 2022-07-08 上海图双精密装备有限公司 一种自动涂胶机构
JP2024124744A (ja) * 2023-03-03 2024-09-13 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置
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Also Published As

Publication number Publication date
US20120264308A1 (en) 2012-10-18
JP2012222330A (ja) 2012-11-12
US8969218B2 (en) 2015-03-03
TW201306115A (zh) 2013-02-01
JP5611884B2 (ja) 2014-10-22
KR20120117682A (ko) 2012-10-24
TWI494990B (zh) 2015-08-01

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