TWI494990B - 蝕刻方法、蝕刻裝置及記憶媒體 - Google Patents

蝕刻方法、蝕刻裝置及記憶媒體 Download PDF

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Publication number
TWI494990B
TWI494990B TW101113043A TW101113043A TWI494990B TW I494990 B TWI494990 B TW I494990B TW 101113043 A TW101113043 A TW 101113043A TW 101113043 A TW101113043 A TW 101113043A TW I494990 B TWI494990 B TW I494990B
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TW
Taiwan
Prior art keywords
substrate
etching
supplying
film
agent
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TW101113043A
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English (en)
Chinese (zh)
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TW201306115A (zh
Inventor
渡邊司
江頭佳祐
金子都
折居武彥
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東京威力科創股份有限公司
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Publication of TW201306115A publication Critical patent/TW201306115A/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0422—Apparatus for fluid treatment for etching for wet etching
    • H10P72/0424—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
    • H10P14/6546—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials to change the surface groups of the insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/69215—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material being a silicon oxide, e.g. SiO2

Landscapes

  • Weting (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
TW101113043A 2011-04-14 2012-04-12 蝕刻方法、蝕刻裝置及記憶媒體 TWI494990B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011090256A JP5611884B2 (ja) 2011-04-14 2011-04-14 エッチング方法、エッチング装置および記憶媒体

Publications (2)

Publication Number Publication Date
TW201306115A TW201306115A (zh) 2013-02-01
TWI494990B true TWI494990B (zh) 2015-08-01

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
TW101113043A TWI494990B (zh) 2011-04-14 2012-04-12 蝕刻方法、蝕刻裝置及記憶媒體

Country Status (4)

Country Link
US (1) US8969218B2 (enExample)
JP (1) JP5611884B2 (enExample)
KR (1) KR101523348B1 (enExample)
TW (1) TWI494990B (enExample)

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KR101550255B1 (ko) * 2011-05-10 2015-09-04 가부시키가이샤 후지킨 유량 모니터 부착 압력식 유량 제어 장치와, 이것을 사용한 유체 공급계의 이상 검출 방법 및 모니터 유량 이상 시의 처치 방법
JP5490071B2 (ja) 2011-09-12 2014-05-14 株式会社東芝 エッチング方法
JP6242057B2 (ja) 2013-02-15 2017-12-06 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置
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JP6400919B2 (ja) * 2013-03-07 2018-10-03 芝浦メカトロニクス株式会社 基板処理装置及び基板処理方法
JP2015070080A (ja) * 2013-09-27 2015-04-13 東京エレクトロン株式会社 エッチング方法、エッチング装置および記憶媒体
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US9875907B2 (en) * 2015-11-20 2018-01-23 Applied Materials, Inc. Self-aligned shielding of silicon oxide
US10867814B2 (en) * 2016-02-15 2020-12-15 Tokyo Electron Limited Liquid processing method, substrate processing apparatus, and storage medium
JP6236105B2 (ja) * 2016-03-04 2017-11-22 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置
JP6773495B2 (ja) * 2016-09-15 2020-10-21 株式会社Ｓｃｒｅｅｎホールディングス エッチング装置、基板処理装置、エッチング方法および基板処理方法
JP7078616B2 (ja) * 2016-12-26 2022-05-31 ソウルブレイン シーオー．， エルティーディー． エッチング用組成物およびこれを用いた半導体素子の製造方法
KR101828437B1 (ko) * 2017-04-06 2018-03-29 주식회사 디엔에스 실리콘 질화막 식각용 조성물.
KR102441238B1 (ko) * 2017-09-14 2022-09-08 주식회사 이엔에프테크놀로지 실리콘 질화막에 대한 선택적 에칭을 위한 식각 조성물 및 이를 이용한 식각 방법
US10163623B1 (en) * 2017-10-31 2018-12-25 Taiwan Semiconductor Manufacturing Co., Ltd. Etch method with surface modification treatment for forming semiconductor structure
KR102484977B1 (ko) * 2017-12-28 2023-01-09 오씨아이 주식회사 식각 조성물 및 이를 이용한 식각 방법
KR102557642B1 (ko) * 2018-10-25 2023-07-20 에스케이이노베이션 주식회사 식각 조성물 첨가제, 그 제조방법 및 이를 포함하는 식각 조성물
JP7446097B2 (ja) * 2019-12-06 2024-03-08 東京応化工業株式会社 表面処理剤及び表面処理方法
JP7521895B2 (ja) * 2019-12-27 2024-07-24 芝浦メカトロニクス株式会社 基板処理方法および基板処理装置
CN113496891B (zh) * 2020-04-03 2023-03-14 重庆超硅半导体有限公司 一种集成电路硅片表面氧化膜自适应均匀腐蚀方法
US12125708B2 (en) * 2020-04-10 2024-10-22 Hitachi High-Tech Corporation Etching method
CN113322071A (zh) * 2021-05-28 2021-08-31 长江存储科技有限责任公司 刻蚀用组合物及其使用方法
CN119452061A (zh) * 2022-05-13 2025-02-14 恩特格里斯公司 氮化硅蚀刻组合物和方法
US20250343040A1 (en) * 2022-06-02 2025-11-06 Central Glass Company, Limited Substrate processing method and substrate production method
WO2023234370A1 (ja) * 2022-06-02 2023-12-07 セントラル硝子株式会社 基材の処理方法、および基材の製造方法
CN114713465A (zh) * 2022-06-08 2022-07-08 上海图双精密装备有限公司 一种自动涂胶机构
JP2024124744A (ja) * 2023-03-03 2024-09-13 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置
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JP2025051142A (ja) * 2023-09-25 2025-04-04 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法
JP2025051143A (ja) * 2023-09-25 2025-04-04 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法と基板処理装置
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Also Published As

Publication number Publication date
KR20120117682A (ko) 2012-10-24
US20120264308A1 (en) 2012-10-18
TW201306115A (zh) 2013-02-01
JP2012222330A (ja) 2012-11-12
JP5611884B2 (ja) 2014-10-22
KR101523348B1 (ko) 2015-05-27
US8969218B2 (en) 2015-03-03

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