TWI494990B - 蝕刻方法、蝕刻裝置及記憶媒體 - Google Patents
蝕刻方法、蝕刻裝置及記憶媒體 Download PDFInfo
- Publication number
- TWI494990B TWI494990B TW101113043A TW101113043A TWI494990B TW I494990 B TWI494990 B TW I494990B TW 101113043 A TW101113043 A TW 101113043A TW 101113043 A TW101113043 A TW 101113043A TW I494990 B TWI494990 B TW I494990B
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- Taiwan
- Prior art keywords
- substrate
- etching
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- Prior art date
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- 238000005530 etching Methods 0.000 title claims description 168
- 238000000034 method Methods 0.000 title claims description 30
- 239000000758 substrate Substances 0.000 claims description 122
- 239000007788 liquid Substances 0.000 claims description 104
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims description 96
- 239000003795 chemical substances by application Substances 0.000 claims description 66
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 claims description 40
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 claims description 21
- 230000001681 protective effect Effects 0.000 claims description 16
- 238000003860 storage Methods 0.000 claims description 16
- 238000001035 drying Methods 0.000 claims description 13
- 229940100198 alkylating agent Drugs 0.000 claims description 11
- 239000002168 alkylating agent Substances 0.000 claims description 11
- 229910000420 cerium oxide Inorganic materials 0.000 claims description 10
- DIOQZVSQGTUSAI-UHFFFAOYSA-N decane Chemical compound CCCCCCCCCC DIOQZVSQGTUSAI-UHFFFAOYSA-N 0.000 claims description 10
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 claims description 10
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 claims description 9
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 claims description 9
- YBMRDBCBODYGJE-UHFFFAOYSA-N germanium dioxide Chemical compound O=[Ge]=O YBMRDBCBODYGJE-UHFFFAOYSA-N 0.000 claims description 8
- YDNKGFDKKRUKPY-JHOUSYSJSA-N C16 ceramide Natural products CCCCCCCCCCCCCCCC(=O)N[C@@H](CO)[C@H](O)C=CCCCCCCCCCCCCC YDNKGFDKKRUKPY-JHOUSYSJSA-N 0.000 claims description 4
- CRJGESKKUOMBCT-VQTJNVASSA-N N-acetylsphinganine Chemical compound CCCCCCCCCCCCCCC[C@@H](O)[C@H](CO)NC(C)=O CRJGESKKUOMBCT-VQTJNVASSA-N 0.000 claims description 4
- 229940106189 ceramide Drugs 0.000 claims description 4
- ZVEQCJWYRWKARO-UHFFFAOYSA-N ceramide Natural products CCCCCCCCCCCCCCC(O)C(=O)NC(CO)C(O)C=CCCC=C(C)CCCCCCCCC ZVEQCJWYRWKARO-UHFFFAOYSA-N 0.000 claims description 4
- 238000002425 crystallisation Methods 0.000 claims description 4
- 230000008025 crystallization Effects 0.000 claims description 4
- 229940119177 germanium dioxide Drugs 0.000 claims description 4
- VVGIYYKRAMHVLU-UHFFFAOYSA-N newbouldiamide Natural products CCCCCCCCCCCCCCCCCCCC(O)C(O)C(O)C(CO)NC(=O)CCCCCCCCCCCCCCCCC VVGIYYKRAMHVLU-UHFFFAOYSA-N 0.000 claims description 4
- 229910052684 Cerium Inorganic materials 0.000 claims description 3
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052732 germanium Inorganic materials 0.000 claims description 3
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 3
- 230000001678 irradiating effect Effects 0.000 claims description 2
- BCZWPKDRLPGFFZ-UHFFFAOYSA-N azanylidynecerium Chemical compound [Ce]#N BCZWPKDRLPGFFZ-UHFFFAOYSA-N 0.000 claims 1
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 claims 1
- 230000001568 sexual effect Effects 0.000 claims 1
- 239000000243 solution Substances 0.000 description 19
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 16
- 229910004298 SiO 2 Inorganic materials 0.000 description 14
- 238000001039 wet etching Methods 0.000 description 13
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 11
- KAHVZNKZQFSBFW-UHFFFAOYSA-N n-methyl-n-trimethylsilylmethanamine Chemical compound CN(C)[Si](C)(C)C KAHVZNKZQFSBFW-UHFFFAOYSA-N 0.000 description 10
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 8
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 7
- 239000007864 aqueous solution Substances 0.000 description 7
- 229910000449 hafnium oxide Inorganic materials 0.000 description 6
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 6
- 229910052707 ruthenium Inorganic materials 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- 238000009281 ultraviolet germicidal irradiation Methods 0.000 description 6
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 5
- 230000006870 function Effects 0.000 description 5
- 229910000078 germane Inorganic materials 0.000 description 5
- 238000011282 treatment Methods 0.000 description 5
- 229960002050 hydrofluoric acid Drugs 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 229910017855 NH 4 F Inorganic materials 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 2
- 241000862969 Stella Species 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- GJWAPAVRQYYSTK-UHFFFAOYSA-N [(dimethyl-$l^{3}-silanyl)amino]-dimethylsilicon Chemical compound C[Si](C)N[Si](C)C GJWAPAVRQYYSTK-UHFFFAOYSA-N 0.000 description 2
- 125000000217 alkyl group Chemical group 0.000 description 2
- 238000009835 boiling Methods 0.000 description 2
- 239000003085 diluting agent Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 2
- LLHKCFNBLRBOGN-UHFFFAOYSA-N propylene glycol methyl ether acetate Chemical compound COCC(C)OC(C)=O LLHKCFNBLRBOGN-UHFFFAOYSA-N 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- RSKFXZJLEFGMQK-UHFFFAOYSA-N 1-n,1-n,1-n',1-n'-tetramethyldecane-1,1-diamine Chemical compound CCCCCCCCCC(N(C)C)N(C)C RSKFXZJLEFGMQK-UHFFFAOYSA-N 0.000 description 1
- YTPFRRRNIYVFFE-UHFFFAOYSA-N 2,2,3,3,5,5-hexamethyl-1,4-dioxane Chemical compound CC1(C)COC(C)(C)C(C)(C)O1 YTPFRRRNIYVFFE-UHFFFAOYSA-N 0.000 description 1
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 description 1
- PLPPFBVCFWAVKQ-UHFFFAOYSA-N CC(N(C)C1=CC=CC=2C3=CC=CC=C3CC12)C Chemical compound CC(N(C)C1=CC=CC=2C3=CC=CC=C3CC12)C PLPPFBVCFWAVKQ-UHFFFAOYSA-N 0.000 description 1
- HPCIXPCAAKYXOL-UHFFFAOYSA-N CN(C)C(C(C)(C)C)CCCCCCCC Chemical compound CN(C)C(C(C)(C)C)CCCCCCCC HPCIXPCAAKYXOL-UHFFFAOYSA-N 0.000 description 1
- XDTMQSROBMDMFD-UHFFFAOYSA-N Cyclohexane Chemical compound C1CCCCC1 XDTMQSROBMDMFD-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 230000029936 alkylation Effects 0.000 description 1
- 238000005804 alkylation reaction Methods 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 230000020335 dealkylation Effects 0.000 description 1
- 238000006900 dealkylation reaction Methods 0.000 description 1
- KZFNONVXCZVHRD-UHFFFAOYSA-N dimethylamino(dimethyl)silicon Chemical compound CN(C)[Si](C)C KZFNONVXCZVHRD-UHFFFAOYSA-N 0.000 description 1
- 239000003814 drug Substances 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 238000011010 flushing procedure Methods 0.000 description 1
- NEXSMEBSBIABKL-UHFFFAOYSA-N hexamethyldisilane Chemical compound C[Si](C)(C)[Si](C)(C)C NEXSMEBSBIABKL-UHFFFAOYSA-N 0.000 description 1
- FFUAGWLWBBFQJT-UHFFFAOYSA-N hexamethyldisilazane Chemical compound C[Si](C)(C)N[Si](C)(C)C FFUAGWLWBBFQJT-UHFFFAOYSA-N 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- OOXOBWDOWJBZHX-UHFFFAOYSA-N n-(dimethylaminosilyl)-n-methylmethanamine Chemical compound CN(C)[SiH2]N(C)C OOXOBWDOWJBZHX-UHFFFAOYSA-N 0.000 description 1
- 238000005121 nitriding Methods 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- -1 ruthenium nitride Chemical class 0.000 description 1
- 229910001925 ruthenium oxide Inorganic materials 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 238000006277 sulfonation reaction Methods 0.000 description 1
- ITMCEJHCFYSIIV-UHFFFAOYSA-M triflate Chemical compound [O-]S(=O)(=O)C(F)(F)F ITMCEJHCFYSIIV-UHFFFAOYSA-M 0.000 description 1
- FTVLMFQEYACZNP-UHFFFAOYSA-N trimethylsilyl trifluoromethanesulfonate Chemical compound C[Si](C)(C)OS(=O)(=O)C(F)(F)F FTVLMFQEYACZNP-UHFFFAOYSA-N 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
- H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
- H01L21/02359—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment to change the surface groups of the insulating layer
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Weting (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011090256A JP5611884B2 (ja) | 2011-04-14 | 2011-04-14 | エッチング方法、エッチング装置および記憶媒体 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201306115A TW201306115A (zh) | 2013-02-01 |
| TWI494990B true TWI494990B (zh) | 2015-08-01 |
Family
ID=47006703
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW101113043A TWI494990B (zh) | 2011-04-14 | 2012-04-12 | 蝕刻方法、蝕刻裝置及記憶媒體 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US8969218B2 (enExample) |
| JP (1) | JP5611884B2 (enExample) |
| KR (1) | KR101523348B1 (enExample) |
| TW (1) | TWI494990B (enExample) |
Families Citing this family (37)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2012074601A (ja) * | 2010-09-29 | 2012-04-12 | Dainippon Screen Mfg Co Ltd | 基板処理装置および基板処理方法 |
| JP5782279B2 (ja) * | 2011-01-20 | 2015-09-24 | 株式会社Ｓｃｒｅｅｎホールディングス | 基板処理方法および基板処理装置 |
| WO2012153454A1 (ja) * | 2011-05-10 | 2012-11-15 | 株式会社フジキン | 流量モニタ付圧力式流量制御装置と、これを用いた流体供給系の異常検出方法並びにモニタ流量異常時の処置方法 |
| JP5490071B2 (ja) * | 2011-09-12 | 2014-05-14 | 株式会社東芝 | エッチング方法 |
| US20140231012A1 (en) * | 2013-02-15 | 2014-08-21 | Dainippon Screen Mfg, Co., Ltd. | Substrate processing apparatus |
| JP6242057B2 (ja) | 2013-02-15 | 2017-12-06 | 株式会社Ｓｃｒｅｅｎホールディングス | 基板処理装置 |
| KR102057220B1 (ko) * | 2013-02-19 | 2020-01-22 | 삼성전자주식회사 | 약액 공급기, 약액 공급기를 구비하는 기판 처리 장치 및 이를 이용한 기판의 처리방법 |
| JP6400919B2 (ja) * | 2013-03-07 | 2018-10-03 | 芝浦メカトロニクス株式会社 | 基板処理装置及び基板処理方法 |
| JP2015070080A (ja) * | 2013-09-27 | 2015-04-13 | 東京エレクトロン株式会社 | エッチング方法、エッチング装置および記憶媒体 |
| KR102152909B1 (ko) * | 2013-12-31 | 2020-09-07 | 세메스 주식회사 | 기판처리방법 |
| US9868902B2 (en) | 2014-07-17 | 2018-01-16 | Soulbrain Co., Ltd. | Composition for etching |
| JP6420707B2 (ja) * | 2015-04-07 | 2018-11-07 | 東京エレクトロン株式会社 | 基板処理方法および基板処理装置 |
| JP6419053B2 (ja) * | 2015-10-08 | 2018-11-07 | 東京エレクトロン株式会社 | 基板処理方法および基板処理装置 |
| US9875907B2 (en) * | 2015-11-20 | 2018-01-23 | Applied Materials, Inc. | Self-aligned shielding of silicon oxide |
| US10867814B2 (en) * | 2016-02-15 | 2020-12-15 | Tokyo Electron Limited | Liquid processing method, substrate processing apparatus, and storage medium |
| JP6236105B2 (ja) * | 2016-03-04 | 2017-11-22 | 株式会社Ｓｃｒｅｅｎホールディングス | 基板処理方法および基板処理装置 |
| JP6773495B2 (ja) * | 2016-09-15 | 2020-10-21 | 株式会社Ｓｃｒｅｅｎホールディングス | エッチング装置、基板処理装置、エッチング方法および基板処理方法 |
| CN109689838A (zh) | 2016-12-26 | 2019-04-26 | 秀博瑞殷株式公社 | 蚀刻用组合物和使用该蚀刻用组合物制造半导体器件的方法 |
| KR101828437B1 (ko) * | 2017-04-06 | 2018-03-29 | 주식회사 디엔에스 | 실리콘 질화막 식각용 조성물. |
| KR102441238B1 (ko) * | 2017-09-14 | 2022-09-08 | 주식회사 이엔에프테크놀로지 | 실리콘 질화막에 대한 선택적 에칭을 위한 식각 조성물 및 이를 이용한 식각 방법 |
| US10163623B1 (en) * | 2017-10-31 | 2018-12-25 | Taiwan Semiconductor Manufacturing Co., Ltd. | Etch method with surface modification treatment for forming semiconductor structure |
| KR102484977B1 (ko) * | 2017-12-28 | 2023-01-09 | 오씨아이 주식회사 | 식각 조성물 및 이를 이용한 식각 방법 |
| KR102557642B1 (ko) * | 2018-10-25 | 2023-07-20 | 에스케이이노베이션 주식회사 | 식각 조성물 첨가제, 그 제조방법 및 이를 포함하는 식각 조성물 |
| JP7446097B2 (ja) * | 2019-12-06 | 2024-03-08 | 東京応化工業株式会社 | 表面処理剤及び表面処理方法 |
| JP7521895B2 (ja) * | 2019-12-27 | 2024-07-24 | 芝浦メカトロニクス株式会社 | 基板処理方法および基板処理装置 |
| CN113496891B (zh) * | 2020-04-03 | 2023-03-14 | 重庆超硅半导体有限公司 | 一种集成电路硅片表面氧化膜自适应均匀腐蚀方法 |
| KR102590870B1 (ko) * | 2020-04-10 | 2023-10-19 | 주식회사 히타치하이테크 | 에칭 방법 |
| CN113322071A (zh) * | 2021-05-28 | 2021-08-31 | 长江存储科技有限责任公司 | 刻蚀用组合物及其使用方法 |
| JP2025515839A (ja) * | 2022-05-13 | 2025-05-20 | インテグリス・インコーポレーテッド | 窒化ケイ素エッチング組成物および方法 |
| KR20250019096A (ko) * | 2022-06-02 | 2025-02-07 | 샌트랄 글래스 컴퍼니 리미티드 | 기재의 처리 방법, 및 기재의 제조 방법 |
| WO2023234370A1 (ja) * | 2022-06-02 | 2023-12-07 | セントラル硝子株式会社 | 基材の処理方法、および基材の製造方法 |
| CN114713465A (zh) * | 2022-06-08 | 2022-07-08 | 上海图双精密装备有限公司 | 一种自动涂胶机构 |
| JP2024124744A (ja) * | 2023-03-03 | 2024-09-13 | 株式会社Ｓｃｒｅｅｎホールディングス | 基板処理方法および基板処理装置 |
| US12494375B2 (en) * | 2023-08-30 | 2025-12-09 | Tokyo Electron Limited | Method to selectively etch silicon nitride to silicon oxide using surface alkylation |
| JP2025051142A (ja) * | 2023-09-25 | 2025-04-04 | 株式会社Ｓｃｒｅｅｎホールディングス | 基板処理方法 |
| JP2025051143A (ja) * | 2023-09-25 | 2025-04-04 | 株式会社Ｓｃｒｅｅｎホールディングス | 基板処理方法と基板処理装置 |
| WO2025105151A1 (en) * | 2023-11-13 | 2025-05-22 | Fujifilm Corporation | Method of manufacturing treated substrate and method of manufacturing semiconductor |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW200900853A (en) * | 2007-04-18 | 2009-01-01 | Micron Technology Inc | Methods of forming a stamp, methods of patterning a substrate, and a stamp and a patterning system for same |
| US20100099256A1 (en) * | 2008-10-21 | 2010-04-22 | Tokyo Electron Limited | Semiconductor device manufacturing method and semiconductor device manufacturing apparatus |
| US20100240219A1 (en) * | 2008-06-16 | 2010-09-23 | Kabushiki Kaisha Toshiba | Method of treating a semiconductor substrate |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| AU2003220039A1 (en) * | 2002-03-04 | 2003-09-22 | Supercritical Systems Inc. | Method of passivating of low dielectric materials in wafer processing |
| JP4001575B2 (ja) | 2002-12-26 | 2007-10-31 | 大日本スクリーン製造株式会社 | 基板処理装置 |
| US20040140365A1 (en) | 2002-12-26 | 2004-07-22 | Dainippon Screen Mfg. Co., Ltd. | Substrate treating apparatus |
| KR100870806B1 (ko) * | 2004-07-02 | 2008-11-27 | 도쿄엘렉트론가부시키가이샤 | 반도체 디바이스의 제조 방법 |
| JP2007134690A (ja) * | 2005-10-11 | 2007-05-31 | Toshiba Corp | 半導体装置の製造方法および半導体装置の製造に用いられる薬液 |
| JP2008277748A (ja) * | 2007-03-30 | 2008-11-13 | Renesas Technology Corp | レジストパターンの形成方法とその方法により製造した半導体デバイス |
| JP2010027952A (ja) * | 2008-07-23 | 2010-02-04 | Toshiba Corp | 半導体装置の製造方法 |
| JP5195394B2 (ja) * | 2008-12-19 | 2013-05-08 | 東ソー株式会社 | エッチング液の再生方法 |
| JP5377052B2 (ja) * | 2009-04-17 | 2013-12-25 | 株式会社東芝 | 半導体装置の製造方法 |
| JP2011009277A (ja) * | 2009-06-23 | 2011-01-13 | Toshiba Corp | 基板洗浄装置および基板洗浄方法 |
| JP5361790B2 (ja) * | 2010-04-28 | 2013-12-04 | 株式会社東芝 | 半導体基板の表面処理方法 |
| US20120083127A1 (en) * | 2010-09-30 | 2012-04-05 | Tokyo Electron Limited | Method for forming a pattern and a semiconductor device manufacturing method |
| JP5782279B2 (ja) * | 2011-01-20 | 2015-09-24 | 株式会社Ｓｃｒｅｅｎホールディングス | 基板処理方法および基板処理装置 |
-
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW200900853A (en) * | 2007-04-18 | 2009-01-01 | Micron Technology Inc | Methods of forming a stamp, methods of patterning a substrate, and a stamp and a patterning system for same |
| US20100240219A1 (en) * | 2008-06-16 | 2010-09-23 | Kabushiki Kaisha Toshiba | Method of treating a semiconductor substrate |
| US20100099256A1 (en) * | 2008-10-21 | 2010-04-22 | Tokyo Electron Limited | Semiconductor device manufacturing method and semiconductor device manufacturing apparatus |
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| TW201306115A (zh) | 2013-02-01 |
| US20120264308A1 (en) | 2012-10-18 |
| KR101523348B1 (ko) | 2015-05-27 |
| US8969218B2 (en) | 2015-03-03 |
| JP5611884B2 (ja) | 2014-10-22 |
| KR20120117682A (ko) | 2012-10-24 |
| JP2012222330A (ja) | 2012-11-12 |
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