JP5588150B2 - 樹脂封止型半導体装置 - Google Patents

樹脂封止型半導体装置 Download PDF

Info

Publication number
JP5588150B2
JP5588150B2 JP2009258415A JP2009258415A JP5588150B2 JP 5588150 B2 JP5588150 B2 JP 5588150B2 JP 2009258415 A JP2009258415 A JP 2009258415A JP 2009258415 A JP2009258415 A JP 2009258415A JP 5588150 B2 JP5588150 B2 JP 5588150B2
Authority
JP
Japan
Prior art keywords
resin
semiconductor element
microball
semiconductor device
sealing body
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2009258415A
Other languages
English (en)
Japanese (ja)
Other versions
JP2010206162A5 (https=
JP2010206162A (ja
Inventor
紀幸 木村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Instruments Inc
Original Assignee
Seiko Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Instruments Inc filed Critical Seiko Instruments Inc
Priority to JP2009258415A priority Critical patent/JP5588150B2/ja
Priority to TW099101642A priority patent/TWI478296B/zh
Priority to US12/701,018 priority patent/US8703532B2/en
Priority to CN201010113656.6A priority patent/CN101901788B/zh
Priority to KR1020100011105A priority patent/KR101665963B1/ko
Publication of JP2010206162A publication Critical patent/JP2010206162A/ja
Publication of JP2010206162A5 publication Critical patent/JP2010206162A5/ja
Priority to US14/150,153 priority patent/US9490224B2/en
Application granted granted Critical
Publication of JP5588150B2 publication Critical patent/JP5588150B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/20Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/20Conductive package substrates serving as an interconnection, e.g. metal plates
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00Encapsulations, e.g. protective coatings
    • H10W74/01Manufacture or treatment
    • H10W74/014Manufacture or treatment using batch processing
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00Encapsulations, e.g. protective coatings
    • H10W74/01Manufacture or treatment
    • H10W74/016Manufacture or treatment using moulds
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00Encapsulations, e.g. protective coatings
    • H10W74/01Manufacture or treatment
    • H10W74/019Manufacture or treatment using temporary auxiliary substrates
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00Encapsulations, e.g. protective coatings
    • H10W74/10Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/111Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/01Manufacture or treatment
    • H10W72/0198Manufacture or treatment batch processes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/071Connecting or disconnecting
    • H10W72/075Connecting or disconnecting of bond wires
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/071Connecting or disconnecting
    • H10W72/075Connecting or disconnecting of bond wires
    • H10W72/07502Connecting or disconnecting of bond wires using an auxiliary member
    • H10W72/07504Connecting or disconnecting of bond wires using an auxiliary member the auxiliary member being temporary, e.g. a sacrificial coating
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/50Bond wires
    • H10W72/531Shapes of wire connectors
    • H10W72/536Shapes of wire connectors the connected ends being ball-shaped
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/50Bond wires
    • H10W72/531Shapes of wire connectors
    • H10W72/5363Shapes of wire connectors the connected ends being wedge-shaped
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/50Bond wires
    • H10W72/541Dispositions of bond wires
    • H10W72/5449Dispositions of bond wires not being orthogonal to a side surface of the chip, e.g. fan-out arrangements
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/50Bond wires
    • H10W72/551Materials of bond wires
    • H10W72/552Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5522Materials of bond wires comprising metals or metalloids, e.g. silver comprising gold [Au]
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/50Bond wires
    • H10W72/551Materials of bond wires
    • H10W72/552Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5524Materials of bond wires comprising metals or metalloids, e.g. silver comprising aluminium [Al]
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/50Bond wires
    • H10W72/551Materials of bond wires
    • H10W72/552Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5525Materials of bond wires comprising metals or metalloids, e.g. silver comprising copper [Cu]
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/50Bond wires
    • H10W72/59Bond pads specially adapted therefor
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/90Bond pads, in general
    • H10W72/931Shapes of bond pads
    • H10W72/932Plan-view shape, i.e. in top view
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/90Bond pads, in general
    • H10W72/951Materials of bond pads
    • H10W72/952Materials of bond pads comprising metals or metalloids, e.g. PbSn, Ag or Cu
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00Encapsulations, e.g. protective coatings
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00Encapsulations, e.g. protective coatings
    • H10W74/10Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00Encapsulations, e.g. protective coatings
    • H10W74/10Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/131Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed
    • H10W74/142Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed the encapsulations exposing the passive side of the semiconductor body

Landscapes

  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
JP2009258415A 2009-02-06 2009-11-11 樹脂封止型半導体装置 Expired - Fee Related JP5588150B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2009258415A JP5588150B2 (ja) 2009-02-06 2009-11-11 樹脂封止型半導体装置
TW099101642A TWI478296B (zh) 2009-02-06 2010-01-21 樹脂密封型半導體裝置
CN201010113656.6A CN101901788B (zh) 2009-02-06 2010-02-05 树脂密封型半导体装置及其制造方法
KR1020100011105A KR101665963B1 (ko) 2009-02-06 2010-02-05 수지 봉지형 반도체 장치 및 그 제조 방법
US12/701,018 US8703532B2 (en) 2009-02-06 2010-02-05 Semiconductor device and manufacturing method thereof
US14/150,153 US9490224B2 (en) 2009-02-06 2014-01-08 Semiconductor device and manufacturing method thereof

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2009026507 2009-02-06
JP2009026507 2009-02-06
JP2009258415A JP5588150B2 (ja) 2009-02-06 2009-11-11 樹脂封止型半導体装置

Publications (3)

Publication Number Publication Date
JP2010206162A JP2010206162A (ja) 2010-09-16
JP2010206162A5 JP2010206162A5 (https=) 2012-10-25
JP5588150B2 true JP5588150B2 (ja) 2014-09-10

Family

ID=42539745

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009258415A Expired - Fee Related JP5588150B2 (ja) 2009-02-06 2009-11-11 樹脂封止型半導体装置

Country Status (5)

Country Link
US (2) US8703532B2 (https=)
JP (1) JP5588150B2 (https=)
KR (1) KR101665963B1 (https=)
CN (1) CN101901788B (https=)
TW (1) TWI478296B (https=)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5642473B2 (ja) 2010-09-22 2014-12-17 セイコーインスツル株式会社 Bga半導体パッケージおよびその製造方法
CN102786028B (zh) * 2012-07-17 2015-05-06 西南交通大学 一种用于大面积摩擦诱导微/纳米加工的多针尖阵列的制作方法
CN102832141A (zh) * 2012-08-18 2012-12-19 孙青秀 一种基于框架的无载体式封装件的制作工艺
US9711479B2 (en) 2013-07-03 2017-07-18 Rosenberger Hochfrequenztechnik Gmbh & Co. Kg Substrate less die package having wires with dielectric and metal coatings and the method of manufacturing the same
DE102015212177A1 (de) * 2015-06-30 2017-01-05 Osram Gmbh Schaltungsträger für eine elektronische Schaltung und Verfahren zum Herstellen eines derartigen Schaltungsträgers
CN105489509A (zh) * 2015-12-25 2016-04-13 华天科技(西安)有限公司 应用钢网印刷技术优化点胶工艺的光学传感芯片封装方法
CN110517963A (zh) * 2019-09-05 2019-11-29 合肥矽迈微电子科技有限公司 一种环膜结构注塑工艺
WO2021049235A1 (ja) * 2019-09-13 2021-03-18 昭和電工株式会社 積層体およびその製造方法

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3129169B2 (ja) * 1995-11-08 2001-01-29 富士通株式会社 半導体装置及びその製造方法
KR100332378B1 (ko) * 1999-09-11 2002-04-12 이병구 반도체 패키지의 솔더볼 마운팅 방법
JP3823651B2 (ja) * 2000-01-05 2006-09-20 松下電器産業株式会社 樹脂封止型半導体装置の製造方法
JP2001230270A (ja) * 2000-02-14 2001-08-24 Fujitsu Ltd 半導体装置及びその製造方法
JP3626075B2 (ja) 2000-06-20 2005-03-02 九州日立マクセル株式会社 半導体装置の製造方法
US20020033527A1 (en) * 2000-09-19 2002-03-21 Siliconware Precision Industries Co., Ltd. Semiconductor device and manufacturing process thereof
US7297572B2 (en) * 2001-09-07 2007-11-20 Hynix Semiconductor, Inc. Fabrication method for electronic system modules
JP4014912B2 (ja) * 2001-09-28 2007-11-28 株式会社ルネサステクノロジ 半導体装置
CN1477703A (zh) * 2002-08-02 2004-02-25 ǧס������ҵ��ʽ���� 焊球组件及其生产方法,形成焊块的方法
JP2004319577A (ja) * 2003-04-11 2004-11-11 Dainippon Printing Co Ltd 樹脂封止型半導体装置とその製造方法、および積層型樹脂封止型半導体装置
US7056766B2 (en) * 2003-12-09 2006-06-06 Freescale Semiconductor, Inc. Method of forming land grid array packaged device
JP2005194393A (ja) * 2004-01-07 2005-07-21 Hitachi Chem Co Ltd 回路接続用接着フィルム及び回路接続構造体
KR20050079399A (ko) * 2004-02-05 2005-08-10 삼성전자주식회사 이방성도전필름 및 범프와, 이를 갖는 반도체 칩의 실장구조체
US7205178B2 (en) * 2004-03-24 2007-04-17 Freescale Semiconductor, Inc. Land grid array packaged device and method of forming same
JP2006066521A (ja) * 2004-08-25 2006-03-09 Fujitsu Ltd 半導体装置及び半導体装置の製造方法
US8169067B2 (en) * 2006-10-20 2012-05-01 Broadcom Corporation Low profile ball grid array (BGA) package with exposed die and method of making same
KR100792663B1 (ko) * 2006-12-01 2008-01-09 주식회사 동부하이텍 다층구조의 금속층으로 적층된 전자패키지용 플라스틱솔더볼의 제조방법 및 그로부터 제조된 플라스틱 솔더볼
US20080308935A1 (en) * 2007-06-18 2008-12-18 Samsung Electronics Co., Ltd. Semiconductor chip package, semiconductor package including semiconductor chip package, and method of fabricating semiconductor package
US8501088B2 (en) * 2007-07-25 2013-08-06 Nippon Steel & Sumikin Materials Co., Ltd. Solder alloy, solder ball and electronic member having solder bump

Also Published As

Publication number Publication date
US20100200982A1 (en) 2010-08-12
US9490224B2 (en) 2016-11-08
US20140117544A1 (en) 2014-05-01
TWI478296B (zh) 2015-03-21
KR101665963B1 (ko) 2016-10-24
KR20100090666A (ko) 2010-08-16
CN101901788A (zh) 2010-12-01
JP2010206162A (ja) 2010-09-16
TW201036118A (en) 2010-10-01
US8703532B2 (en) 2014-04-22
CN101901788B (zh) 2014-10-29

Similar Documents

Publication Publication Date Title
JP5588150B2 (ja) 樹脂封止型半導体装置
CN101601133B (zh) 部分图案化的引线框以及在半导体封装中制造和使用其的方法
US20080023819A1 (en) Package structure having semiconductor chip embedded therein and method for fabricating the same
JP6964477B2 (ja) 半導体素子用基板及びその製造方法、半導体装置及びその製造方法
JP2013069807A (ja) 半導体パッケージ及びその製造方法
US20100041183A1 (en) Semiconductor device and manufacturing method thereof
US9245864B2 (en) Ball grid array semiconductor package and method of manufacturing the same
JP2010062316A (ja) 半導体装置及び半導体装置の製造方法
JP2005260120A (ja) 半導体装置
JPH11317472A (ja) 半導体装置およびその製造方法
JP2956659B2 (ja) 半導体装置およびそのリードフレーム
JP4577316B2 (ja) 半導体装置の製造方法
WO2007057954A1 (ja) 半導体装置及びその製造方法
JP4089629B2 (ja) 光センサモジュール
JP4979661B2 (ja) 半導体装置の製造方法
JP4321758B2 (ja) 半導体装置
JP2003046053A (ja) 半導体装置およびその製造方法
JP2005116886A (ja) 半導体装置の製造方法
JP2009302427A (ja) 半導体装置および半導体装置の製造方法
JPH0738015A (ja) 樹脂封止型半導体装置およびその製造方法
JP2006173376A (ja) 半導体装置及び半導体装置の製造方法
JP2006196667A (ja) 半導体パッケージの製造方法
CN101916748A (zh) 半导体器件的制造方法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20120911

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20120911

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20130513

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20130521

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20130718

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20140415

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20140612

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20140701

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20140725

R150 Certificate of patent or registration of utility model

Ref document number: 5588150

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

S111 Request for change of ownership or part of ownership

Free format text: JAPANESE INTERMEDIATE CODE: R313113

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

S533 Written request for registration of change of name

Free format text: JAPANESE INTERMEDIATE CODE: R313533

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees