JP5565070B2 - 炭化珪素結晶および炭化珪素結晶の製造方法 - Google Patents

炭化珪素結晶および炭化珪素結晶の製造方法 Download PDF

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JP5565070B2
JP5565070B2 JP2010100891A JP2010100891A JP5565070B2 JP 5565070 B2 JP5565070 B2 JP 5565070B2 JP 2010100891 A JP2010100891 A JP 2010100891A JP 2010100891 A JP2010100891 A JP 2010100891A JP 5565070 B2 JP5565070 B2 JP 5565070B2
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raw material
sic crystal
silicon carbide
crystal
carbide crystal
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Japanese (ja)
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JP2011230941A (ja
JP2011230941A5 (https=
Inventor
信 佐々木
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Sumitomo Electric Industries Ltd
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Sumitomo Electric Industries Ltd
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Priority to JP2010100891A priority Critical patent/JP5565070B2/ja
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Priority to CA2775923A priority patent/CA2775923A1/en
Priority to US13/499,482 priority patent/US8574529B2/en
Priority to KR1020127009040A priority patent/KR20120130318A/ko
Priority to CN2011800043891A priority patent/CN102597339A/zh
Priority to EP11774697.4A priority patent/EP2565301B1/en
Priority to PCT/JP2011/054339 priority patent/WO2011135913A1/ja
Priority to TW100113266A priority patent/TW201142092A/zh
Publication of JP2011230941A publication Critical patent/JP2011230941A/ja
Publication of JP2011230941A5 publication Critical patent/JP2011230941A5/ja
Priority to US14/019,882 priority patent/US20140004303A1/en
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Publication of JP5565070B2 publication Critical patent/JP5565070B2/ja
Priority to US15/185,602 priority patent/US9725823B2/en
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C30B23/06—Heating of the deposition chamber, the substrate or the materials to be evaporated
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C30B23/025—Epitaxial-layer growth characterised by the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
    • C30B35/007—Apparatus for preparing, pre-treating the source material to be used for crystal growth
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/22—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using physical deposition, e.g. vacuum deposition or sputtering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2902—Materials being Group IVA materials
    • H10P14/2904—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3408—Silicon carbide
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/21—Circular sheet or circular blank
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24355—Continuous and nonuniform or irregular surface on layer or component [e.g., roofing, etc.]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/29—Coated or structually defined flake, particle, cell, strand, strand portion, rod, filament, macroscopic fiber or mass thereof
    • Y10T428/2982—Particulate matter [e.g., sphere, flake, etc.]

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Carbon And Carbon Compounds (AREA)
JP2010100891A 2010-04-26 2010-04-26 炭化珪素結晶および炭化珪素結晶の製造方法 Active JP5565070B2 (ja)

Priority Applications (10)

Application Number Priority Date Filing Date Title
JP2010100891A JP5565070B2 (ja) 2010-04-26 2010-04-26 炭化珪素結晶および炭化珪素結晶の製造方法
US13/499,482 US8574529B2 (en) 2010-04-26 2011-02-25 Silicon carbide crystal and method of manufacturing silicon carbide crystal
KR1020127009040A KR20120130318A (ko) 2010-04-26 2011-02-25 탄화규소 결정 및 탄화규소 결정의 제조 방법
CN2011800043891A CN102597339A (zh) 2010-04-26 2011-02-25 碳化硅晶体和制造碳化硅晶体的方法
EP11774697.4A EP2565301B1 (en) 2010-04-26 2011-02-25 Silicon carbide crystal and method for producing silicon carbide crystal
PCT/JP2011/054339 WO2011135913A1 (ja) 2010-04-26 2011-02-25 炭化珪素結晶および炭化珪素結晶の製造方法
CA2775923A CA2775923A1 (en) 2010-04-26 2011-02-25 Silicon carbide crystal and method of manufacturing silicon carbide crystal
TW100113266A TW201142092A (en) 2010-04-26 2011-04-15 Silicon carbide crystal and method for producing silicon carbide crystal
US14/019,882 US20140004303A1 (en) 2010-04-26 2013-09-06 Silicon carbide crystal and method of manufacturing silicon carbide crystal
US15/185,602 US9725823B2 (en) 2010-04-26 2016-06-17 Silicon carbide crystal and method of manufacturing silicon carbide crystal

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Application Number Priority Date Filing Date Title
JP2010100891A JP5565070B2 (ja) 2010-04-26 2010-04-26 炭化珪素結晶および炭化珪素結晶の製造方法

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JP2011230941A JP2011230941A (ja) 2011-11-17
JP2011230941A5 JP2011230941A5 (https=) 2013-01-24
JP5565070B2 true JP5565070B2 (ja) 2014-08-06

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US (3) US8574529B2 (https=)
EP (1) EP2565301B1 (https=)
JP (1) JP5565070B2 (https=)
KR (1) KR20120130318A (https=)
CN (1) CN102597339A (https=)
CA (1) CA2775923A1 (https=)
TW (1) TW201142092A (https=)
WO (1) WO2011135913A1 (https=)

Families Citing this family (9)

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Publication number Priority date Publication date Assignee Title
JP5910393B2 (ja) 2012-07-26 2016-04-27 住友電気工業株式会社 炭化珪素基板の製造方法
JP6028754B2 (ja) 2014-03-11 2016-11-16 トヨタ自動車株式会社 ＳｉＣ単結晶基板の製造方法
US10108798B1 (en) * 2016-01-04 2018-10-23 Smart Information Flow Technologies LLC Methods and systems for defending against cyber-attacks
CN105603530B (zh) * 2016-01-12 2018-02-27 台州市一能科技有限公司 用于碳化硅晶体高速生长的原料及碳化硅晶体的生长方法
JP6086167B2 (ja) * 2016-03-18 2017-03-01 住友電気工業株式会社 炭化珪素基板の製造方法
WO2018176302A1 (zh) * 2017-03-30 2018-10-04 新疆天科合达蓝光半导体有限公司 用于生长SiC晶体的SiC原料的制备方法和制备装置
CN115704110A (zh) * 2021-08-06 2023-02-17 株式会社电装 碳化硅晶体制造设备、其控制装置及生成学习模型和控制其的方法
KR102442731B1 (ko) * 2021-12-23 2022-09-13 주식회사 쎄닉 탄화규소 분말 및 이를 이용하여 탄화규소 잉곳을 제조하는 방법
KR102442730B1 (ko) * 2021-12-23 2022-09-13 주식회사 쎄닉 탄화규소 분말, 이를 이용하여 탄화규소 잉곳을 제조하는 방법 및 탄화규소 웨이퍼

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Publication number Publication date
US20120183466A1 (en) 2012-07-19
EP2565301B1 (en) 2015-03-25
EP2565301A1 (en) 2013-03-06
JP2011230941A (ja) 2011-11-17
US9725823B2 (en) 2017-08-08
TW201142092A (en) 2011-12-01
CA2775923A1 (en) 2011-11-03
WO2011135913A1 (ja) 2011-11-03
US20140004303A1 (en) 2014-01-02
EP2565301A4 (en) 2013-11-27
CN102597339A (zh) 2012-07-18
US8574529B2 (en) 2013-11-05
US20160289863A1 (en) 2016-10-06
KR20120130318A (ko) 2012-11-30

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