JP2011230941A5 - - Google Patents
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- Publication number
- JP2011230941A5 JP2011230941A5 JP2010100891A JP2010100891A JP2011230941A5 JP 2011230941 A5 JP2011230941 A5 JP 2011230941A5 JP 2010100891 A JP2010100891 A JP 2010100891A JP 2010100891 A JP2010100891 A JP 2010100891A JP 2011230941 A5 JP2011230941 A5 JP 2011230941A5
- Authority
- JP
- Japan
- Prior art keywords
- silicon carbide
- raw material
- carbide crystal
- ppm
- less
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000013078 crystal Substances 0.000 claims description 32
- 239000002994 raw material Substances 0.000 claims description 25
- 239000002245 particle Substances 0.000 claims description 12
- 238000004519 manufacturing process Methods 0.000 claims description 6
- 238000010438 heat treatment Methods 0.000 claims description 5
- 238000005498 polishing Methods 0.000 claims description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims 17
- 229910010271 silicon carbide Inorganic materials 0.000 claims 16
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 2
- 229910052782 aluminium Inorganic materials 0.000 claims 2
- 229910052742 iron Inorganic materials 0.000 claims 2
- 230000001376 precipitating effect Effects 0.000 claims 2
- 239000003929 acidic solution Substances 0.000 claims 1
- 239000000463 material Substances 0.000 claims 1
- 238000000034 method Methods 0.000 claims 1
- 238000001556 precipitation Methods 0.000 claims 1
- 238000005406 washing Methods 0.000 claims 1
- 239000000843 powder Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Priority Applications (10)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2010100891A JP5565070B2 (ja) | 2010-04-26 | 2010-04-26 | 炭化珪素結晶および炭化珪素結晶の製造方法 |
| US13/499,482 US8574529B2 (en) | 2010-04-26 | 2011-02-25 | Silicon carbide crystal and method of manufacturing silicon carbide crystal |
| KR1020127009040A KR20120130318A (ko) | 2010-04-26 | 2011-02-25 | 탄화규소 결정 및 탄화규소 결정의 제조 방법 |
| CN2011800043891A CN102597339A (zh) | 2010-04-26 | 2011-02-25 | 碳化硅晶体和制造碳化硅晶体的方法 |
| EP11774697.4A EP2565301B1 (en) | 2010-04-26 | 2011-02-25 | Silicon carbide crystal and method for producing silicon carbide crystal |
| PCT/JP2011/054339 WO2011135913A1 (ja) | 2010-04-26 | 2011-02-25 | 炭化珪素結晶および炭化珪素結晶の製造方法 |
| CA2775923A CA2775923A1 (en) | 2010-04-26 | 2011-02-25 | Silicon carbide crystal and method of manufacturing silicon carbide crystal |
| TW100113266A TW201142092A (en) | 2010-04-26 | 2011-04-15 | Silicon carbide crystal and method for producing silicon carbide crystal |
| US14/019,882 US20140004303A1 (en) | 2010-04-26 | 2013-09-06 | Silicon carbide crystal and method of manufacturing silicon carbide crystal |
| US15/185,602 US9725823B2 (en) | 2010-04-26 | 2016-06-17 | Silicon carbide crystal and method of manufacturing silicon carbide crystal |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2010100891A JP5565070B2 (ja) | 2010-04-26 | 2010-04-26 | 炭化珪素結晶および炭化珪素結晶の製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2011230941A JP2011230941A (ja) | 2011-11-17 |
| JP2011230941A5 true JP2011230941A5 (https=) | 2013-01-24 |
| JP5565070B2 JP5565070B2 (ja) | 2014-08-06 |
Family
ID=44861234
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2010100891A Active JP5565070B2 (ja) | 2010-04-26 | 2010-04-26 | 炭化珪素結晶および炭化珪素結晶の製造方法 |
Country Status (8)
| Country | Link |
|---|---|
| US (3) | US8574529B2 (https=) |
| EP (1) | EP2565301B1 (https=) |
| JP (1) | JP5565070B2 (https=) |
| KR (1) | KR20120130318A (https=) |
| CN (1) | CN102597339A (https=) |
| CA (1) | CA2775923A1 (https=) |
| TW (1) | TW201142092A (https=) |
| WO (1) | WO2011135913A1 (https=) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5910393B2 (ja) | 2012-07-26 | 2016-04-27 | 住友電気工業株式会社 | 炭化珪素基板の製造方法 |
| JP6028754B2 (ja) | 2014-03-11 | 2016-11-16 | トヨタ自動車株式会社 | ＳｉＣ単結晶基板の製造方法 |
| US10108798B1 (en) * | 2016-01-04 | 2018-10-23 | Smart Information Flow Technologies LLC | Methods and systems for defending against cyber-attacks |
| CN105603530B (zh) * | 2016-01-12 | 2018-02-27 | 台州市一能科技有限公司 | 用于碳化硅晶体高速生长的原料及碳化硅晶体的生长方法 |
| JP6086167B2 (ja) * | 2016-03-18 | 2017-03-01 | 住友電気工業株式会社 | 炭化珪素基板の製造方法 |
| WO2018176302A1 (zh) * | 2017-03-30 | 2018-10-04 | 新疆天科合达蓝光半导体有限公司 | 用于生长SiC晶体的SiC原料的制备方法和制备装置 |
| CN115704110A (zh) * | 2021-08-06 | 2023-02-17 | 株式会社电装 | 碳化硅晶体制造设备、其控制装置及生成学习模型和控制其的方法 |
| KR102442731B1 (ko) * | 2021-12-23 | 2022-09-13 | 주식회사 쎄닉 | 탄화규소 분말 및 이를 이용하여 탄화규소 잉곳을 제조하는 방법 |
| KR102442730B1 (ko) * | 2021-12-23 | 2022-09-13 | 주식회사 쎄닉 | 탄화규소 분말, 이를 이용하여 탄화규소 잉곳을 제조하는 방법 및 탄화규소 웨이퍼 |
Family Cites Families (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58147493A (ja) | 1982-02-12 | 1983-09-02 | フイリツプス・ペトロリユ−ム・コンパニ− | 熱分解法用の防汚剤 |
| JPS58187479A (ja) | 1982-04-27 | 1983-11-01 | Honda Motor Co Ltd | 可撓シ−ル材の外被材貼付方法 |
| JPH0645519B2 (ja) * | 1986-08-18 | 1994-06-15 | 三洋電機株式会社 | ｐ型ＳｉＣ単結晶の成長方法 |
| JPS6350393A (ja) * | 1986-08-20 | 1988-03-03 | Sanyo Electric Co Ltd | ＳｉＣ単結晶の成長方法 |
| US5863325A (en) | 1995-05-31 | 1999-01-26 | Bridgestone Corporation | Process for producing high purity silicon carbide powder for preparation of a silicon carbide single crystal and single crystal |
| JP3934695B2 (ja) * | 1995-05-31 | 2007-06-20 | 株式会社ブリヂストン | 炭化ケイ素単結晶製造用高純度炭化ケイ素粉体の製造方法 |
| JP3590464B2 (ja) | 1995-12-08 | 2004-11-17 | 新日本製鐵株式会社 | ４ｈ型単結晶炭化珪素の製造方法 |
| US7553373B2 (en) * | 2001-06-15 | 2009-06-30 | Bridgestone Corporation | Silicon carbide single crystal and production thereof |
| SE520968C2 (sv) * | 2001-10-29 | 2003-09-16 | Okmetic Oyj | Högresistiv monokristallin kiselkarbid och metod för dess framställning |
| US20060249073A1 (en) | 2003-03-10 | 2006-11-09 | The New Industry Research Organization | Method of heat treatment and heat treatment apparatus |
| JP4593099B2 (ja) * | 2003-03-10 | 2010-12-08 | 学校法人関西学院 | 単結晶炭化ケイ素の液相エピタキシャル成長法及びそれに用いられる熱処理装置 |
| JP4307913B2 (ja) | 2003-06-18 | 2009-08-05 | 新日本製鐵株式会社 | 高純度炭化珪素単結晶の製造方法 |
| JP2005239496A (ja) * | 2004-02-27 | 2005-09-08 | Nippon Steel Corp | 炭化珪素単結晶育成用炭化珪素原料と炭化珪素単結晶及びその製造方法 |
| JP4427470B2 (ja) | 2004-03-29 | 2010-03-10 | 新日本製鐵株式会社 | 炭化珪素単結晶の製造方法 |
| WO2006017074A2 (en) * | 2004-07-07 | 2006-02-16 | Ii-Vi Incorporated | Low-doped semi-insulating sic crystals and method |
| JP2007284306A (ja) * | 2006-04-19 | 2007-11-01 | Nippon Steel Corp | 炭化珪素単結晶及びその製造方法 |
| EP2264223A3 (en) * | 2006-09-14 | 2011-10-26 | Cree, Inc. | Micropipe-free silicon carbide and related method of manufacture |
| JP2010083681A (ja) * | 2008-09-29 | 2010-04-15 | Bridgestone Corp | 炭化ケイ素単結晶の製造方法及び真空チャック |
| JP2010095397A (ja) | 2008-10-15 | 2010-04-30 | Nippon Steel Corp | 炭化珪素単結晶及び炭化珪素単結晶ウェハ |
-
2010
- 2010-04-26 JP JP2010100891A patent/JP5565070B2/ja active Active
-
2011
- 2011-02-25 CA CA2775923A patent/CA2775923A1/en not_active Abandoned
- 2011-02-25 KR KR1020127009040A patent/KR20120130318A/ko not_active Ceased
- 2011-02-25 CN CN2011800043891A patent/CN102597339A/zh active Pending
- 2011-02-25 WO PCT/JP2011/054339 patent/WO2011135913A1/ja not_active Ceased
- 2011-02-25 EP EP11774697.4A patent/EP2565301B1/en active Active
- 2011-02-25 US US13/499,482 patent/US8574529B2/en active Active
- 2011-04-15 TW TW100113266A patent/TW201142092A/zh unknown
-
2013
- 2013-09-06 US US14/019,882 patent/US20140004303A1/en not_active Abandoned
-
2016
- 2016-06-17 US US15/185,602 patent/US9725823B2/en active Active
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