JP5524856B2 - エッジ明瞭性が向上した構造の製造方法 - Google Patents

エッジ明瞭性が向上した構造の製造方法 Download PDF

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JP5524856B2
JP5524856B2 JP2010538011A JP2010538011A JP5524856B2 JP 5524856 B2 JP5524856 B2 JP 5524856B2 JP 2010538011 A JP2010538011 A JP 2010538011A JP 2010538011 A JP2010538011 A JP 2010538011A JP 5524856 B2 JP5524856 B2 JP 5524856B2
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light beam
resin
output
light
focal point
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JP2011507031A (ja
JP2011507031A5 (enExample
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ジェイ． ゲイツ，ブライアン
ティー． クラサ，ロバート
ペ． マルコビッチ，プルジェミスワブ
アール． シコラ，クレイグ
ジェイ． デボー，ロバート
ファクリス，ディーン
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3M Innovative Properties Co
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70375—Multiphoton lithography or multiphoton photopolymerization; Imaging systems comprising means for converting one type of radiation into another type of radiation

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
JP2010538011A 2007-12-12 2008-11-06 エッジ明瞭性が向上した構造の製造方法 Active JP5524856B2 (ja)

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US1312107P 2007-12-12 2007-12-12
US61/013,121 2007-12-12
PCT/US2008/082588 WO2009075970A1 (en) 2007-12-12 2008-11-06 Method for making structures with improved edge definition

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JP2011507031A5 JP2011507031A5 (enExample) 2011-12-22
JP5524856B2 true JP5524856B2 (ja) 2014-06-18

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JP2014022569A Active JP5806348B2 (ja) 2007-12-12 2014-02-07 エッジ明瞭性が向上した構造の製造方法

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US (1) US8455846B2 (enExample)
EP (1) EP2232531B1 (enExample)
JP (2) JP5524856B2 (enExample)
CN (1) CN101946305B (enExample)
WO (1) WO2009075970A1 (enExample)

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JP2014111385A (ja) 2014-06-19
EP2232531A1 (en) 2010-09-29
EP2232531A4 (en) 2017-08-02
JP5806348B2 (ja) 2015-11-10
US20100294954A1 (en) 2010-11-25
JP2011507031A (ja) 2011-03-03
EP2232531B1 (en) 2018-09-19
CN101946305A (zh) 2011-01-12
CN101946305B (zh) 2014-02-12
US8455846B2 (en) 2013-06-04
WO2009075970A1 (en) 2009-06-18

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