JP5518281B2 - 表面処理方法 - Google Patents

表面処理方法 Download PDF

Info

Publication number
JP5518281B2
JP5518281B2 JP2006519696A JP2006519696A JP5518281B2 JP 5518281 B2 JP5518281 B2 JP 5518281B2 JP 2006519696 A JP2006519696 A JP 2006519696A JP 2006519696 A JP2006519696 A JP 2006519696A JP 5518281 B2 JP5518281 B2 JP 5518281B2
Authority
JP
Japan
Prior art keywords
water
plasma
article
water vapor
contact
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2006519696A
Other languages
English (en)
Japanese (ja)
Other versions
JPWO2006104043A1 (ja
Inventor
理玄 上西
信福 野村
洋通 豊田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Chemical Corp
Ehime University NUC
Original Assignee
Mitsubishi Chemical Corp
Mitsubishi Rayon Co Ltd
Ehime University NUC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Chemical Corp, Mitsubishi Rayon Co Ltd, Ehime University NUC filed Critical Mitsubishi Chemical Corp
Priority to JP2006519696A priority Critical patent/JP5518281B2/ja
Publication of JPWO2006104043A1 publication Critical patent/JPWO2006104043A1/ja
Application granted granted Critical
Publication of JP5518281B2 publication Critical patent/JP5518281B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J19/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J19/08—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D65/00—Accessories or auxiliary operations, in general, for separation processes or apparatus using semi-permeable membranes
    • B01D65/02—Membrane cleaning or sterilisation ; Membrane regeneration
    • A—HUMAN NECESSITIES
    • A62—LIFE-SAVING; FIRE-FIGHTING
    • A62D—CHEMICAL MEANS FOR EXTINGUISHING FIRES OR FOR COMBATING OR PROTECTING AGAINST HARMFUL CHEMICAL AGENTS; CHEMICAL MATERIALS FOR USE IN BREATHING APPARATUS
    • A62D3/00—Processes for making harmful chemical substances harmless or less harmful, by effecting a chemical change in the substances
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D67/00—Processes specially adapted for manufacturing semi-permeable membranes for separation processes or apparatus
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23G—CLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
    • C23G5/00—Cleaning or de-greasing metallic material by other methods; Apparatus for cleaning or de-greasing metallic material with organic solvents
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02054—Cleaning before device manufacture, i.e. Begin-Of-Line process combining dry and wet cleaning steps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
    • H01L21/02312—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a gas or vapour
    • H01L21/02315—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a gas or vapour treatment by exposure to a plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • A—HUMAN NECESSITIES
    • A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61L—METHODS OR APPARATUS FOR STERILISING MATERIALS OR OBJECTS IN GENERAL; DISINFECTION, STERILISATION OR DEODORISATION OF AIR; CHEMICAL ASPECTS OF BANDAGES, DRESSINGS, ABSORBENT PADS OR SURGICAL ARTICLES; MATERIALS FOR BANDAGES, DRESSINGS, ABSORBENT PADS OR SURGICAL ARTICLES
    • A61L2/00—Methods or apparatus for disinfecting or sterilising materials or objects other than foodstuffs or contact lenses; Accessories therefor
    • A61L2/02—Methods or apparatus for disinfecting or sterilising materials or objects other than foodstuffs or contact lenses; Accessories therefor using physical phenomena
    • A61L2/14—Plasma, i.e. ionised gases
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D2321/00—Details relating to membrane cleaning, regeneration, sterilization or to the prevention of fouling
    • B01D2321/20—By influencing the flow
    • B01D2321/2066—Pulsated flow
    • B01D2321/2075—Ultrasonic treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Organic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • General Health & Medical Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Business, Economics & Management (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Emergency Management (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Surface Treatment Of Glass (AREA)
  • Weting (AREA)
  • Fuel Cell (AREA)
  • Cleaning In General (AREA)
  • Cleaning By Liquid Or Steam (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • ing And Chemical Polishing (AREA)
  • Treatments Of Macromolecular Shaped Articles (AREA)
JP2006519696A 2005-03-25 2006-03-24 表面処理方法 Active JP5518281B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2006519696A JP5518281B2 (ja) 2005-03-25 2006-03-24 表面処理方法

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2005089631 2005-03-25
JP2005089631 2005-03-25
PCT/JP2006/305982 WO2006104043A1 (ja) 2005-03-25 2006-03-24 表面処理方法および表面処理された物品
JP2006519696A JP5518281B2 (ja) 2005-03-25 2006-03-24 表面処理方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2012187000A Division JP5725304B2 (ja) 2005-03-25 2012-08-27 表面処理方法

Publications (2)

Publication Number Publication Date
JPWO2006104043A1 JPWO2006104043A1 (ja) 2008-09-04
JP5518281B2 true JP5518281B2 (ja) 2014-06-11

Family

ID=37053300

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2006519696A Active JP5518281B2 (ja) 2005-03-25 2006-03-24 表面処理方法
JP2012187000A Active JP5725304B2 (ja) 2005-03-25 2012-08-27 表面処理方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2012187000A Active JP5725304B2 (ja) 2005-03-25 2012-08-27 表面処理方法

Country Status (5)

Country Link
US (1) US20080210664A1 (enExample)
JP (2) JP5518281B2 (enExample)
KR (1) KR100938323B1 (enExample)
TW (1) TWI405608B (enExample)
WO (1) WO2006104043A1 (enExample)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102947931A (zh) * 2010-03-03 2013-02-27 佐治亚技术研究公司 无机中介片上的贯通封装过孔（tpv）结构及其加工方法
US10369327B2 (en) * 2010-04-28 2019-08-06 Clph, Llc Catheters with lubricious linings and methods for making and using them
JP5696447B2 (ja) * 2010-11-25 2015-04-08 Ｊｆｅスチール株式会社 表面処理金属材料の製造方法
JP5645163B2 (ja) * 2011-01-26 2014-12-24 国立大学法人大阪大学 フッ素系樹脂材料の表面改質方法及びフッ素系樹脂材料と金属材料の積層体
KR101405721B1 (ko) 2011-04-29 2014-06-13 한국과학기술연구원 소수성이 개선된 기공체 및 그 제조 방법
KR101349075B1 (ko) * 2011-10-10 2014-01-16 한국과학기술연구원 물질전달성이 향상된 연료전지 및 그 제조 방법
US9809493B2 (en) 2015-04-27 2017-11-07 Ford Global Technologies, Llc Surface treatment of glass bubbles
JP2019029333A (ja) * 2017-07-26 2019-02-21 東芝メモリ株式会社 プラズマ処理装置および半導体装置の製造方法
KR102148831B1 (ko) 2018-10-02 2020-08-27 삼성전기주식회사 코일 부품
KR102619877B1 (ko) * 2019-09-11 2024-01-03 삼성전자주식회사 기판 처리 장치
JP7427475B2 (ja) * 2020-02-28 2024-02-05 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法
JP7399209B2 (ja) * 2022-04-05 2023-12-15 エルジー・ケム・リミテッド 処理装置、分解生成物の製造方法、及び処理方法
WO2025070805A1 (ja) * 2023-09-29 2025-04-03 ダイキン工業株式会社 エアフィルタ濾材、エアフィルタ濾材の使用方法、および空気処理装置
CN118952032B (zh) * 2024-09-20 2025-05-30 彤程电子材料(常州)有限公司 一种复合抛光垫及其制备方法和应用

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001058184A (ja) * 1999-08-24 2001-03-06 Mitsubishi Heavy Ind Ltd 有害物処理方法および有害物処理装置
JP2005529455A (ja) * 2002-05-08 2005-09-29 マン トーマス チャン チャック 流体中で作られるプラズマ

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62110716A (ja) * 1985-11-06 1987-05-21 Power Reactor & Nuclear Fuel Dev Corp 液中プラズマ加熱による物性変換方法
DE3827630A1 (de) * 1988-08-16 1990-02-22 Hoechst Ag Flaechengebilde aus einem substrat und einem ueberzug und verfahren zu seiner herstellung
JPH03231199A (ja) * 1990-02-06 1991-10-15 Mitsubishi Heavy Ind Ltd 使用ずみ燃料剪断片の減容方法
JP3837783B2 (ja) * 1996-08-12 2006-10-25 森 勇蔵 超純水中の水酸基による加工方法
EP0867924B1 (en) * 1997-02-14 2011-08-31 Imec Method for removing organic contaminants from a semiconductor surface
US6360754B2 (en) * 1998-03-16 2002-03-26 Vlsi Technology, Inc. Method of protecting quartz hardware from etching during plasma-enhanced cleaning of a semiconductor processing chamber
US6106653A (en) * 1998-03-31 2000-08-22 Exxon Research And Engineering Co. Water vapor plasma treatment of glass surfaces
JPH11345797A (ja) * 1998-06-02 1999-12-14 Shimada Phys & Chem Ind Co Ltd ２流体噴出ノズル及びこれを使用した２流体噴流洗浄装置並びに２流体噴流洗浄方法
JP3224777B2 (ja) * 1998-06-09 2001-11-05 三菱重工業株式会社 原子炉構造物自動解体装置
JP2002313358A (ja) * 2001-04-10 2002-10-25 Aisin Seiki Co Ltd 膜・電極接合体の製造方法および固体高分子電解質型燃料電池
US6593161B2 (en) * 2001-12-12 2003-07-15 Sharp Laboratories Of America, Inc. System and method for cleaning ozone oxidation
JP3624239B2 (ja) * 2002-10-29 2005-03-02 株式会社テクノネットワーク四国 液中プラズマ発生装置、薄膜形成方法およびシリコンカーバイト膜
WO2003086615A1 (en) * 2002-04-01 2003-10-23 Techno Network Shikoku Co., Ltd. Submerged plasma generator, method of generating plasma in liquid and method of decomposing toxic substance with plasma in liquid
ITMI20021985A1 (it) * 2002-09-18 2004-03-19 St Microelectronics Srl Metodo per la fabbricazione di dispositivi elettronici a semiconduttore
JP4111858B2 (ja) * 2003-03-06 2008-07-02 正之 佐藤 水中放電プラズマ方法及び液体処理装置
JP2004306029A (ja) 2003-03-27 2004-11-04 Techno Network Shikoku Co Ltd 化学反応装置および有害物質分解方法
KR20060014388A (ko) * 2003-05-02 2006-02-15 이케이씨 테크놀로지, 인코포레이티드 반도체 공정에서의 에칭후 잔류물의 제거 방법
JP2005058887A (ja) * 2003-08-11 2005-03-10 Mitsubishi Heavy Ind Ltd 高電圧パルスを利用した廃水処理装置
JP4452775B2 (ja) * 2003-09-30 2010-04-21 国立大学法人愛媛大学 機能化繊維の製造方法
US7019288B2 (en) * 2003-09-30 2006-03-28 Sequenom, Inc. Methods of making substrates for mass spectrometry analysis and related devices
JP4370378B2 (ja) * 2004-02-23 2009-11-25 国立大学法人愛媛大学 多孔質膜およびその生成装置と生成方法
US7323080B2 (en) * 2004-05-04 2008-01-29 Semes Co., Ltd. Apparatus for treating substrate
DE112005003029B4 (de) * 2004-12-03 2012-10-04 Kabushiki Kaisha Toyota Jidoshokki In-Flüssigkeit-Plasmaelektrode, In-Flüssigkeit-Plasmaerzeugungsvorrichtung, und In-Flüssigkeit-Plasmaerzeugungsverfahren
JP2006253495A (ja) * 2005-03-11 2006-09-21 Sumitomo Heavy Ind Ltd 表面洗浄装置及び洗浄方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001058184A (ja) * 1999-08-24 2001-03-06 Mitsubishi Heavy Ind Ltd 有害物処理方法および有害物処理装置
JP2005529455A (ja) * 2002-05-08 2005-09-29 マン トーマス チャン チャック 流体中で作られるプラズマ

Also Published As

Publication number Publication date
WO2006104043A1 (ja) 2006-10-05
JP2013031842A (ja) 2013-02-14
TWI405608B (zh) 2013-08-21
KR20070113313A (ko) 2007-11-28
KR100938323B1 (ko) 2010-01-22
US20080210664A1 (en) 2008-09-04
JPWO2006104043A1 (ja) 2008-09-04
TW200637648A (en) 2006-11-01
JP5725304B2 (ja) 2015-05-27

Similar Documents

Publication Publication Date Title
JP5725304B2 (ja) 表面処理方法
Lai et al. Transparent superhydrophobic/superhydrophilic TiO 2-based coatings for self-cleaning and anti-fogging
EP1079003B1 (en) Electrolytic machining method and apparatus
KR100998521B1 (ko) Ｕｖ 처리된 멤브레인
WO1998008248A1 (en) Method and device for washing electronic parts member, or the like
Misra et al. Effect of laser parameters on laser-induced graphene filter fabrication and its performance for desalination and water purification
TWI607043B (zh) 親水性ｐｔｆｅ膜
JP5370543B2 (ja) 過酸化水素製造装置並びにそれを用いた空調機、空気清浄機及び加湿器
Saxena et al. Organization of SiO2 and TiO2 nanoparticles into fractal patterns on glass surface for the generation of superhydrophilicity
BR112021009630A2 (pt) dispositivo para purificar um fluido, em particular, água residual
JPWO2016056466A1 (ja) 抗菌積層構造体及びその製造方法
CN113301985A (zh) 用于海水淡化的三维多孔膜及其制造方法、包括其的海水淡化装置、利用其的海水淡化方法
Agano et al. Fabrication of superhydrophilic and underwater superoleophobic CuxO/TiO2 mesh for oil–water separation
KR101466914B1 (ko) 이산화티탄 나노튜브 광촉매의 제조방법 및 이를 이용한 수처리 장치
CN100378254C (zh) 厚度可控、自由独立超薄多孔氧化铝模板的制备方法
Sorcar et al. Facile electrochemical synthesis of anatase nano-architectured titanium dioxide films with reversible superhydrophilic behavior
JP5130781B2 (ja) 過酸化水素製造装置並びにそれを用いた空調機、空気清浄機及び加湿器
KR100703032B1 (ko) 나노 다공성 광촉매 분리막 및 그 제조방법, 나노 다공성광촉매 분리막을 이용한 수처리 정화 시스템 및 대기 정화시스템
Lim et al. Fabrication of a silica ceramic membrane using the aerosol flame deposition method for pretreatment focusing on particle control during desalination
JP3940967B2 (ja) 電子材料用洗浄水の製造方法及び電子材料の洗浄方法
US9797046B2 (en) Method for etching metal or metal oxide by ozone water, method for smoothing surface of metal or metal oxide by ozone water, and patterning method using ozone water
KR20120130320A (ko) 초다공성 광촉매 물질, 이의 제조 방법 및 이의 용도
JP2009142733A (ja) 不溶性電極及び電気化学的液体処理装置
JP2004335783A (ja) ウェット洗浄処理装置およびウェット洗浄処理方法
JP2013099731A (ja) 生物学的排水処理方法及び生物学的排水処理装置

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20090316

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20090316

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20120703

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20120827

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20130402

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20130523

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20140304

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20140402

R150 Certificate of patent or registration of utility model

Ref document number: 5518281

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

S533 Written request for registration of change of name

Free format text: JAPANESE INTERMEDIATE CODE: R313533

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

S111 Request for change of ownership or part of ownership

Free format text: JAPANESE INTERMEDIATE CODE: R313117

Free format text: JAPANESE INTERMEDIATE CODE: R313113

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250