JP5494147B2 - パワー半導体モジュール及びそれを用いた電力変換装置 - Google Patents

パワー半導体モジュール及びそれを用いた電力変換装置 Download PDF

Info

Publication number
JP5494147B2
JP5494147B2 JP2010087471A JP2010087471A JP5494147B2 JP 5494147 B2 JP5494147 B2 JP 5494147B2 JP 2010087471 A JP2010087471 A JP 2010087471A JP 2010087471 A JP2010087471 A JP 2010087471A JP 5494147 B2 JP5494147 B2 JP 5494147B2
Authority
JP
Japan
Prior art keywords
igbt
terminal
semiconductor module
collector
emitter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2010087471A
Other languages
English (en)
Japanese (ja)
Other versions
JP2011223666A5 (https=
JP2011223666A (ja
Inventor
聡毅 滝沢
誠 谷津
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fuji Electric Co Ltd
Original Assignee
Fuji Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Electric Co Ltd filed Critical Fuji Electric Co Ltd
Priority to JP2010087471A priority Critical patent/JP5494147B2/ja
Priority to CN201110051644.XA priority patent/CN102214644B/zh
Priority to DE102011005184.8A priority patent/DE102011005184B4/de
Priority to US13/042,999 priority patent/US8901602B2/en
Publication of JP2011223666A publication Critical patent/JP2011223666A/ja
Publication of JP2011223666A5 publication Critical patent/JP2011223666A5/ja
Application granted granted Critical
Publication of JP5494147B2 publication Critical patent/JP5494147B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W44/00—Electrical arrangements for controlling or matching impedance
    • H10W44/501—Inductive arrangements
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of AC power input into DC power output; Conversion of DC power input into AC power output
    • H02M7/003—Constructional details, e.g. physical layout, assembly, wiring or busbar connections

Landscapes

  • Inverter Devices (AREA)
  • Power Conversion In General (AREA)
JP2010087471A 2010-04-06 2010-04-06 パワー半導体モジュール及びそれを用いた電力変換装置 Active JP5494147B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2010087471A JP5494147B2 (ja) 2010-04-06 2010-04-06 パワー半導体モジュール及びそれを用いた電力変換装置
CN201110051644.XA CN102214644B (zh) 2010-04-06 2011-02-22 功率半导体器件及使用该器件的功率转换系统
DE102011005184.8A DE102011005184B4 (de) 2010-04-06 2011-03-07 Leistungshalbleiterbauelement und dieses verwendendes Leistungsumformungssystem
US13/042,999 US8901602B2 (en) 2010-04-06 2011-03-08 Power semiconductor device and power conversion system using the device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010087471A JP5494147B2 (ja) 2010-04-06 2010-04-06 パワー半導体モジュール及びそれを用いた電力変換装置

Publications (3)

Publication Number Publication Date
JP2011223666A JP2011223666A (ja) 2011-11-04
JP2011223666A5 JP2011223666A5 (https=) 2013-05-16
JP5494147B2 true JP5494147B2 (ja) 2014-05-14

Family

ID=44709495

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010087471A Active JP5494147B2 (ja) 2010-04-06 2010-04-06 パワー半導体モジュール及びそれを用いた電力変換装置

Country Status (4)

Country Link
US (1) US8901602B2 (https=)
JP (1) JP5494147B2 (https=)
CN (1) CN102214644B (https=)
DE (1) DE102011005184B4 (https=)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5493532B2 (ja) * 2009-07-17 2014-05-14 富士電機株式会社 負荷駆動装置及びこれを使用した電気自動車
JP5724314B2 (ja) * 2010-11-16 2015-05-27 富士電機株式会社 パワー半導体モジュール
WO2013099053A1 (ja) * 2011-12-28 2013-07-04 パナソニック株式会社 マルチレベルインバータ装置
JP5891940B2 (ja) * 2012-05-17 2016-03-23 富士電機株式会社 ３レベルユニットインバータ
CN103904928A (zh) * 2014-04-23 2014-07-02 西华大学 一种串并联混合三电平npp逆变拓扑单元及三电平逆变器
CN105226975B (zh) * 2014-06-06 2017-12-15 台达电子企业管理（上海）有限公司 Tnpc逆变器装置及其桥臂短路检测方法
WO2016031295A1 (ja) * 2014-08-26 2016-03-03 富士電機株式会社 ３レベル電力変換装置
JP6304017B2 (ja) * 2014-12-18 2018-04-04 三菱電機株式会社 半導体装置
DE112017004776B4 (de) 2016-09-23 2022-10-13 Mitsubishi Electric Corporation Leistungshalbleitermodul und leistungshalbleiteranordnung
WO2018092457A1 (ja) * 2016-11-16 2018-05-24 富士電機株式会社 半導体試験回路、半導体試験装置および半導体試験方法
JP2018107857A (ja) * 2016-12-22 2018-07-05 富士電機株式会社 電力変換装置
JP2019180114A (ja) * 2018-03-30 2019-10-17 本田技研工業株式会社 電力変換装置および電力変換装置用コンデンサ
CN108551159B (zh) * 2018-04-08 2019-06-11 科华恒盛股份有限公司 逆阻型igbt短路保护电路、方法及系统和存储介质
JP7039430B2 (ja) * 2018-09-19 2022-03-22 株式会社東芝 Ａｃ／ｄｃコンバータ

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3263317B2 (ja) 1996-06-18 2002-03-04 株式会社東芝 スイッチングモジュールおよびモジュールを用いた電力変換器
CN1242604A (zh) * 1998-06-26 2000-01-26 株式会社东芝 半导体保护器件和功率转换器件
JP2000216331A (ja) 1999-01-25 2000-08-04 Mitsubishi Electric Corp パワ―半導体モジュ―ルおよびそれを用いた電力変換装置
JP3873743B2 (ja) * 1999-10-27 2007-01-24 株式会社日立製作所 電力変換装置
JP2002026251A (ja) 2000-07-11 2002-01-25 Toshiba Corp 半導体装置
JP2002231883A (ja) 2001-01-31 2002-08-16 Hitachi Ltd パワー半導体モジュールおよびそれを用いた電力変換装置
JP2003018854A (ja) 2001-07-02 2003-01-17 Honda Motor Co Ltd 共振形インバータ装置
EP2216891B1 (en) * 2003-08-21 2012-01-04 Denso Corporation Mounting structure ofa semiconductor device
US6838925B1 (en) * 2003-10-07 2005-01-04 American Power Conversion Corporation Three level inverter
US7289329B2 (en) * 2004-06-04 2007-10-30 Siemens Vdo Automotive Corporation Integration of planar transformer and/or planar inductor with power switches in power converter
JP4728718B2 (ja) * 2005-07-15 2011-07-20 ローム株式会社 昇圧型スイッチングレギュレータおよびその制御回路ならびにそれを用いた電子機器
JP2008193779A (ja) * 2007-02-02 2008-08-21 Fuji Electric Systems Co Ltd 半導体モジュール
JP2009022062A (ja) * 2007-07-10 2009-01-29 Fuji Electric Systems Co Ltd ３レベル電力変換回路の配線構造
JP5440335B2 (ja) * 2010-04-06 2014-03-12 富士電機株式会社 パワー半導体モジュール及びそれを用いた電力変換装置
JP2012029429A (ja) * 2010-07-22 2012-02-09 Fuji Electric Co Ltd ３レベル電力変換装置
JP5724314B2 (ja) * 2010-11-16 2015-05-27 富士電機株式会社 パワー半導体モジュール

Also Published As

Publication number Publication date
DE102011005184B4 (de) 2025-06-05
JP2011223666A (ja) 2011-11-04
US8901602B2 (en) 2014-12-02
DE102011005184A1 (de) 2011-11-03
CN102214644A (zh) 2011-10-12
US20110242860A1 (en) 2011-10-06
CN102214644B (zh) 2015-02-25

Similar Documents

Publication Publication Date Title
JP5494147B2 (ja) パワー半導体モジュール及びそれを用いた電力変換装置
JP5440335B2 (ja) パワー半導体モジュール及びそれを用いた電力変換装置
JP5369922B2 (ja) ３レベル電力変換装置
JP5515386B2 (ja) ３レベル電力変換器のスナバ回路
JP5450635B2 (ja) 電力変換装置
JP5457449B2 (ja) 電力変換装置
US20150155770A1 (en) Five-level rectifier
US10003280B2 (en) Semiconductor module, upper and lower arm kit, and three-level inverter
CN103797702B (zh) 多电平功率转换电路
US20130088901A1 (en) Multilevel inverter
JP2008193779A (ja) 半導体モジュール
JP2015035902A (ja) マルチレベル電力変換装置
JP2009022062A (ja) ３レベル電力変換回路の配線構造
JP5446541B2 (ja) 電力変換装置
JP2011254672A (ja) パワー半導体モジュール及びそれを用いた電力変換装置
JP2015027170A (ja) 直流／交流変換装置
KR20140110037A (ko) 전력 변환 장치
JP7446932B2 (ja) 電力変換装置およびスイッチ装置
JP5780907B2 (ja) 電力変換装置
JP2011234544A (ja) パワー半導体モジュール及びそれを用いた電力変換装置
JP5488244B2 (ja) パワー半導体モジュール
JP6175946B2 (ja) 共振型インバータ装置
JPWO2018127945A1 (ja) 電力変換装置
JP5423264B2 (ja) 電力変換装置
JP5879705B2 (ja) 電力変換装置

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20130401

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20130401

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20131212

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20140204

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20140217

R150 Certificate of patent or registration of utility model

Ref document number: 5494147

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250