JP5484783B2 - パッケージ化されたダイヒータ - Google Patents

パッケージ化されたダイヒータ Download PDF

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Publication number
JP5484783B2
JP5484783B2 JP2009116432A JP2009116432A JP5484783B2 JP 5484783 B2 JP5484783 B2 JP 5484783B2 JP 2009116432 A JP2009116432 A JP 2009116432A JP 2009116432 A JP2009116432 A JP 2009116432A JP 5484783 B2 JP5484783 B2 JP 5484783B2
Authority
JP
Japan
Prior art keywords
package
die
heater
temperature
filament
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2009116432A
Other languages
English (en)
Japanese (ja)
Other versions
JP2010021530A5 (enExample
JP2010021530A (ja
Inventor
リチャード・スピールバーガー
ブルース・ウォーカー・オーム
ロナルド・ジェイ・ジェンセン
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Honeywell International Inc
Original Assignee
Honeywell International Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Honeywell International Inc filed Critical Honeywell International Inc
Publication of JP2010021530A publication Critical patent/JP2010021530A/ja
Publication of JP2010021530A5 publication Critical patent/JP2010021530A5/ja
Application granted granted Critical
Publication of JP5484783B2 publication Critical patent/JP5484783B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/2851—Testing of integrated circuits [IC]
    • G01R31/2855—Environmental, reliability or burn-in testing
    • G01R31/2872—Environmental, reliability or burn-in testing related to electrical or environmental aspects, e.g. temperature, humidity, vibration, nuclear radiation
    • G01R31/2874—Environmental, reliability or burn-in testing related to electrical or environmental aspects, e.g. temperature, humidity, vibration, nuclear radiation related to temperature
    • G01R31/2875—Environmental, reliability or burn-in testing related to electrical or environmental aspects, e.g. temperature, humidity, vibration, nuclear radiation related to temperature related to heating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45124—Aluminium (Al) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors

Landscapes

  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • General Engineering & Computer Science (AREA)
  • Toxicology (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Health & Medical Sciences (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Testing Of Individual Semiconductor Devices (AREA)
  • Air-Conditioning For Vehicles (AREA)
  • Resistance Heating (AREA)
  • Electrodes For Cathode-Ray Tubes (AREA)
JP2009116432A 2008-07-14 2009-05-13 パッケージ化されたダイヒータ Expired - Fee Related JP5484783B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12/172,317 US7965094B2 (en) 2008-07-14 2008-07-14 Packaged die heater
US12/172,317 2008-07-14

Publications (3)

Publication Number Publication Date
JP2010021530A JP2010021530A (ja) 2010-01-28
JP2010021530A5 JP2010021530A5 (enExample) 2012-06-28
JP5484783B2 true JP5484783B2 (ja) 2014-05-07

Family

ID=41262269

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009116432A Expired - Fee Related JP5484783B2 (ja) 2008-07-14 2009-05-13 パッケージ化されたダイヒータ

Country Status (5)

Country Link
US (1) US7965094B2 (enExample)
EP (1) EP2146214B1 (enExample)
JP (1) JP5484783B2 (enExample)
AT (1) ATE497173T1 (enExample)
DE (1) DE602009000664D1 (enExample)

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US20150022226A1 (en) * 2009-11-30 2015-01-22 Essai, Inc. Systems and methods for conforming test tooling to integrated circuit device profiles with coaxial socket
US9804223B2 (en) * 2009-11-30 2017-10-31 Essai, Inc. Systems and methods for conforming test tooling to integrated circuit device with heater socket
US8756549B2 (en) 2011-01-05 2014-06-17 International Business Machines Corporation Integrated circuit chip incorporating embedded thermal radiators for localized, on-demand, heating and a system and method for designing such an integrated circuit chip
US10002846B2 (en) 2011-10-27 2018-06-19 Global Circuit Innovations Incorporated Method for remapping a packaged extracted die with 3D printed bond connections
US10109606B2 (en) 2011-10-27 2018-10-23 Global Circuit Innovations, Inc. Remapped packaged extracted die
US9870968B2 (en) 2011-10-27 2018-01-16 Global Circuit Innovations Incorporated Repackaged integrated circuit and assembly method
US10147660B2 (en) 2011-10-27 2018-12-04 Global Circuits Innovations, Inc. Remapped packaged extracted die with 3D printed bond connections
US9935028B2 (en) 2013-03-05 2018-04-03 Global Circuit Innovations Incorporated Method and apparatus for printing integrated circuit bond connections
US10177054B2 (en) 2011-10-27 2019-01-08 Global Circuit Innovations, Inc. Method for remapping a packaged extracted die
US10128161B2 (en) 2011-10-27 2018-11-13 Global Circuit Innovations, Inc. 3D printed hermetic package assembly and method
US9966319B1 (en) 2011-10-27 2018-05-08 Global Circuit Innovations Incorporated Environmental hardening integrated circuit method and apparatus
US9228855B2 (en) 2012-03-07 2016-01-05 Crocus Technology Inc. Magnetic logic units configured to measure magnetic field direction
KR20140106997A (ko) * 2013-02-27 2014-09-04 삼성전자주식회사 반도체 패키지
JP5782070B2 (ja) * 2013-07-19 2015-09-24 日本電信電話株式会社 電気素子のパッケージ
JP6280519B2 (ja) * 2015-05-01 2018-02-14 株式会社ヒットデバイス 電子部品の温度特性評価装置およびそれに用いられる温度制御ユニット
US10499461B2 (en) * 2015-12-21 2019-12-03 Intel Corporation Thermal head with a thermal barrier for integrated circuit die processing
JP2018100838A (ja) * 2016-12-19 2018-06-28 ルネサスエレクトロニクス株式会社 半導体製造装置、半導体製造方法及び半導体装置
US10782316B2 (en) * 2017-01-09 2020-09-22 Delta Design, Inc. Socket side thermal system
CN107860483A (zh) * 2017-12-26 2018-03-30 上海理好智能科技有限公司 一种带温度传感器的发热器及其制备方法
US10115645B1 (en) 2018-01-09 2018-10-30 Global Circuit Innovations, Inc. Repackaged reconditioned die method and assembly
CN108622847A (zh) * 2018-05-03 2018-10-09 河北美泰电子科技有限公司 Mems传感器的封装方法及封装结构
CN110873834A (zh) * 2018-09-03 2020-03-10 天津市菲莱科技有限公司 一种芯片加工设备及其夹持装置
WO2021107115A1 (ja) * 2019-11-27 2021-06-03 京セラ株式会社 回路基板、プローブカード用基板およびプローブカード
US11508680B2 (en) 2020-11-13 2022-11-22 Global Circuit Innovations Inc. Solder ball application for singular die
CN113097200B (zh) * 2021-03-09 2022-09-20 中国电子科技集团公司第二十九研究所 一种倒装热源芯片及其制备方法和应用方法
US11774486B2 (en) 2021-06-30 2023-10-03 Delta Design Inc. Temperature control system including contactor assembly

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JPS51144182A (en) * 1975-06-05 1976-12-10 Mitsubishi Electric Corp Indirectly heated semiconductor unit
US4561006A (en) 1982-07-06 1985-12-24 Sperry Corporation Integrated circuit package with integral heating circuit
US4777434A (en) 1985-10-03 1988-10-11 Amp Incorporated Microelectronic burn-in system
US4968931A (en) 1989-11-03 1990-11-06 Motorola, Inc. Apparatus and method for burning in integrated circuit wafers
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JPH0595076A (ja) * 1991-10-01 1993-04-16 Seiko Epson Corp 半導体装置
KR0140034B1 (ko) 1993-12-16 1998-07-15 모리시다 요이치 반도체 웨이퍼 수납기, 반도체 웨이퍼의 검사용 집적회로 단자와 프로브 단자와의 접속방법 및 그 장치, 반도체 집적회로의 검사방법, 프로브카드 및 그 제조방법
US5451165A (en) 1994-07-27 1995-09-19 Minnesota Mining And Manufacturing Company Temporary package for bare die test and burn-in
US6041729A (en) 1995-10-06 2000-03-28 Alan; Brad Mooring line receptacle apparatus
JP2002110751A (ja) 2000-10-03 2002-04-12 Hitachi Ltd 半導体集積回路装置の検査装置および製造方法
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JP3768845B2 (ja) 2001-07-13 2006-04-19 キヤノン株式会社 光学素子の成形装置
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JP2004206861A (ja) 2002-12-13 2004-07-22 Matsushita Electric Ind Co Ltd 空き領域の検索方法および検索装置、記録済み領域の配置の検証方法および検証装置
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Also Published As

Publication number Publication date
EP2146214B1 (en) 2011-01-26
EP2146214A1 (en) 2010-01-20
JP2010021530A (ja) 2010-01-28
ATE497173T1 (de) 2011-02-15
DE602009000664D1 (de) 2011-03-10
US7965094B2 (en) 2011-06-21
US20100007367A1 (en) 2010-01-14

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