ATE497173T1 - Erhitzer für kompakten chip - Google Patents

Erhitzer für kompakten chip

Info

Publication number
ATE497173T1
ATE497173T1 AT09159277T AT09159277T ATE497173T1 AT E497173 T1 ATE497173 T1 AT E497173T1 AT 09159277 T AT09159277 T AT 09159277T AT 09159277 T AT09159277 T AT 09159277T AT E497173 T1 ATE497173 T1 AT E497173T1
Authority
AT
Austria
Prior art keywords
die
heater
package
heat
integrated circuit
Prior art date
Application number
AT09159277T
Other languages
German (de)
English (en)
Inventor
Richard Spielberger
Bruce Walker Ohme
Ronald J Jensen
Original Assignee
Honeywell Int Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Honeywell Int Inc filed Critical Honeywell Int Inc
Application granted granted Critical
Publication of ATE497173T1 publication Critical patent/ATE497173T1/de

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/2851—Testing of integrated circuits [IC]
    • G01R31/2855—Environmental, reliability or burn-in testing
    • G01R31/2872—Environmental, reliability or burn-in testing related to electrical or environmental aspects, e.g. temperature, humidity, vibration, nuclear radiation
    • G01R31/2874—Environmental, reliability or burn-in testing related to electrical or environmental aspects, e.g. temperature, humidity, vibration, nuclear radiation related to temperature
    • G01R31/2875—Environmental, reliability or burn-in testing related to electrical or environmental aspects, e.g. temperature, humidity, vibration, nuclear radiation related to temperature related to heating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45124—Aluminium (Al) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors

Landscapes

  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • General Engineering & Computer Science (AREA)
  • Toxicology (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Health & Medical Sciences (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Testing Of Individual Semiconductor Devices (AREA)
  • Air-Conditioning For Vehicles (AREA)
  • Resistance Heating (AREA)
  • Electrodes For Cathode-Ray Tubes (AREA)
AT09159277T 2008-07-14 2009-05-01 Erhitzer für kompakten chip ATE497173T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US12/172,317 US7965094B2 (en) 2008-07-14 2008-07-14 Packaged die heater

Publications (1)

Publication Number Publication Date
ATE497173T1 true ATE497173T1 (de) 2011-02-15

Family

ID=41262269

Family Applications (1)

Application Number Title Priority Date Filing Date
AT09159277T ATE497173T1 (de) 2008-07-14 2009-05-01 Erhitzer für kompakten chip

Country Status (5)

Country Link
US (1) US7965094B2 (enExample)
EP (1) EP2146214B1 (enExample)
JP (1) JP5484783B2 (enExample)
AT (1) ATE497173T1 (enExample)
DE (1) DE602009000664D1 (enExample)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20150022226A1 (en) * 2009-11-30 2015-01-22 Essai, Inc. Systems and methods for conforming test tooling to integrated circuit device profiles with coaxial socket
US9804223B2 (en) * 2009-11-30 2017-10-31 Essai, Inc. Systems and methods for conforming test tooling to integrated circuit device with heater socket
US8756549B2 (en) 2011-01-05 2014-06-17 International Business Machines Corporation Integrated circuit chip incorporating embedded thermal radiators for localized, on-demand, heating and a system and method for designing such an integrated circuit chip
US10002846B2 (en) 2011-10-27 2018-06-19 Global Circuit Innovations Incorporated Method for remapping a packaged extracted die with 3D printed bond connections
US10109606B2 (en) 2011-10-27 2018-10-23 Global Circuit Innovations, Inc. Remapped packaged extracted die
US9870968B2 (en) 2011-10-27 2018-01-16 Global Circuit Innovations Incorporated Repackaged integrated circuit and assembly method
US10147660B2 (en) 2011-10-27 2018-12-04 Global Circuits Innovations, Inc. Remapped packaged extracted die with 3D printed bond connections
US9935028B2 (en) 2013-03-05 2018-04-03 Global Circuit Innovations Incorporated Method and apparatus for printing integrated circuit bond connections
US10177054B2 (en) 2011-10-27 2019-01-08 Global Circuit Innovations, Inc. Method for remapping a packaged extracted die
US10128161B2 (en) 2011-10-27 2018-11-13 Global Circuit Innovations, Inc. 3D printed hermetic package assembly and method
US9966319B1 (en) 2011-10-27 2018-05-08 Global Circuit Innovations Incorporated Environmental hardening integrated circuit method and apparatus
US9228855B2 (en) 2012-03-07 2016-01-05 Crocus Technology Inc. Magnetic logic units configured to measure magnetic field direction
KR20140106997A (ko) * 2013-02-27 2014-09-04 삼성전자주식회사 반도체 패키지
JP5782070B2 (ja) * 2013-07-19 2015-09-24 日本電信電話株式会社 電気素子のパッケージ
JP6280519B2 (ja) * 2015-05-01 2018-02-14 株式会社ヒットデバイス 電子部品の温度特性評価装置およびそれに用いられる温度制御ユニット
US10499461B2 (en) * 2015-12-21 2019-12-03 Intel Corporation Thermal head with a thermal barrier for integrated circuit die processing
JP2018100838A (ja) * 2016-12-19 2018-06-28 ルネサスエレクトロニクス株式会社 半導体製造装置、半導体製造方法及び半導体装置
US10782316B2 (en) * 2017-01-09 2020-09-22 Delta Design, Inc. Socket side thermal system
CN107860483A (zh) * 2017-12-26 2018-03-30 上海理好智能科技有限公司 一种带温度传感器的发热器及其制备方法
US10115645B1 (en) 2018-01-09 2018-10-30 Global Circuit Innovations, Inc. Repackaged reconditioned die method and assembly
CN108622847A (zh) * 2018-05-03 2018-10-09 河北美泰电子科技有限公司 Mems传感器的封装方法及封装结构
CN110873834A (zh) * 2018-09-03 2020-03-10 天津市菲莱科技有限公司 一种芯片加工设备及其夹持装置
WO2021107115A1 (ja) * 2019-11-27 2021-06-03 京セラ株式会社 回路基板、プローブカード用基板およびプローブカード
US11508680B2 (en) 2020-11-13 2022-11-22 Global Circuit Innovations Inc. Solder ball application for singular die
CN113097200B (zh) * 2021-03-09 2022-09-20 中国电子科技集团公司第二十九研究所 一种倒装热源芯片及其制备方法和应用方法
US11774486B2 (en) 2021-06-30 2023-10-03 Delta Design Inc. Temperature control system including contactor assembly

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3914639A (en) * 1974-04-05 1975-10-21 Anthony J Barraco Heater unit for cathode
JPS51144182A (en) * 1975-06-05 1976-12-10 Mitsubishi Electric Corp Indirectly heated semiconductor unit
US4561006A (en) 1982-07-06 1985-12-24 Sperry Corporation Integrated circuit package with integral heating circuit
US4777434A (en) 1985-10-03 1988-10-11 Amp Incorporated Microelectronic burn-in system
US4968931A (en) 1989-11-03 1990-11-06 Motorola, Inc. Apparatus and method for burning in integrated circuit wafers
US5905382A (en) 1990-08-29 1999-05-18 Micron Technology, Inc. Universal wafer carrier for wafer level die burn-in
CA2073886A1 (en) 1991-07-19 1993-01-20 Tatsuya Hashinaga Burn-in apparatus and method
JPH0595076A (ja) * 1991-10-01 1993-04-16 Seiko Epson Corp 半導体装置
KR0140034B1 (ko) 1993-12-16 1998-07-15 모리시다 요이치 반도체 웨이퍼 수납기, 반도체 웨이퍼의 검사용 집적회로 단자와 프로브 단자와의 접속방법 및 그 장치, 반도체 집적회로의 검사방법, 프로브카드 및 그 제조방법
US5451165A (en) 1994-07-27 1995-09-19 Minnesota Mining And Manufacturing Company Temporary package for bare die test and burn-in
US6041729A (en) 1995-10-06 2000-03-28 Alan; Brad Mooring line receptacle apparatus
JP2002110751A (ja) 2000-10-03 2002-04-12 Hitachi Ltd 半導体集積回路装置の検査装置および製造方法
GB2368140A (en) 2000-10-19 2002-04-24 Bookham Technology Plc Integrated optical device with heaters
JP3825277B2 (ja) 2001-05-25 2006-09-27 東京エレクトロン株式会社 加熱処理装置
JP3768845B2 (ja) 2001-07-13 2006-04-19 キヤノン株式会社 光学素子の成形装置
US6666907B1 (en) * 2002-01-31 2003-12-23 Sandia Corporation Temperature programmable microfabricated gas chromatography column
JP2004206861A (ja) 2002-12-13 2004-07-22 Matsushita Electric Ind Co Ltd 空き領域の検索方法および検索装置、記録済み領域の配置の検証方法および検証装置
KR100881897B1 (ko) 2003-11-07 2009-02-06 셀레리티 인크. 표면 장착 히터
JP4318108B2 (ja) 2003-12-07 2009-08-19 敬 高橋 散水融雪方法
US20060290370A1 (en) 2004-02-27 2006-12-28 Wells-Cti, Llc, An Oregon Limited Liability Company Temperature control in ic sockets
JP4281605B2 (ja) 2004-04-08 2009-06-17 住友電気工業株式会社 半導体加熱装置
US7047626B2 (en) 2004-07-15 2006-05-23 Bulk Molding Compounds, Inc. Encapsulated electrically resistive heater
US20070030019A1 (en) 2005-08-04 2007-02-08 Micron Technology, Inc. Power sink for IC temperature control
US7626144B2 (en) * 2005-09-29 2009-12-01 Mikhail Merzliakov Method and apparatus for rapid temperature changes

Also Published As

Publication number Publication date
EP2146214B1 (en) 2011-01-26
EP2146214A1 (en) 2010-01-20
JP2010021530A (ja) 2010-01-28
DE602009000664D1 (de) 2011-03-10
JP5484783B2 (ja) 2014-05-07
US7965094B2 (en) 2011-06-21
US20100007367A1 (en) 2010-01-14

Similar Documents

Publication Publication Date Title
ATE497173T1 (de) Erhitzer für kompakten chip
CN103837822B (zh) 一种超大规模集成电路结到壳热阻测试的方法
CN102944824B (zh) 一种整流二极管瞬态高温反向漏电流的测试方法
CN102221667B (zh) 二极管芯片的量测装置及量测方法
CN107271878A (zh) 通过电流加热半导体器件的高温特性测试方法及装置
BRPI0910670A2 (pt) dispositivo e método para tratamento térmico de peças de trabalho em especial pela transferência de calor convectiva
WO2014138428A3 (en) Test system with localized heating and method of manufacture thereof
CN102759544A (zh) 一种大功率碳化硅二极管热阻测试方法
JP2013229496A5 (enExample)
FR2897930B1 (fr) Echangeur thermique a plaques incluant un dispositif d'evaluation de son etat d'encrassement
WO2012157937A3 (ko) 써미스터를 이용한 온도 측정 방법
CN103149238B (zh) 多孔陶瓷导热系数的简易测量装置
ATE473424T1 (de) Füllstandssensor und zugehöriges betriebs-und herstellungsverfahren sowie entsprechende verwendung
TW201128201A (en) Apparatus and method for measuring diode chip
TWI342958B (en) Cooling control device for use in a press coupling mechanism of a testing machine
CN202853845U (zh) 压力传感器温度特性的测试装置
CN102865969B (zh) 压力传感器温度特性的测试装置
CN105717157B (zh) 一种基于保护热板法的用于多孔金属材料有效热导率的快速测定装置和方法
CN104076265A (zh) 一种快速测量半导体器件电学参数温度变化系数的方法和装置
JP2010014736A (ja) 電子部品特性測定装置および電子部品選別装置
PL1838917T3 (pl) Sposób kontroli rezystora zależnego od temperatury, zwłaszcza w suszarce do bielizny
CN201680929U (zh) 现场用干阱式油面温度计校准炉
TW200631076A (en) Heater for semiconductor manufacturing device
CN100420927C (zh) 一种温差电元器件热电转换效率的测试方法
KR20120029155A (ko) 발광다이오드의 효율 측정장치 및 방법

Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties