JP5484741B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP5484741B2
JP5484741B2 JP2009012610A JP2009012610A JP5484741B2 JP 5484741 B2 JP5484741 B2 JP 5484741B2 JP 2009012610 A JP2009012610 A JP 2009012610A JP 2009012610 A JP2009012610 A JP 2009012610A JP 5484741 B2 JP5484741 B2 JP 5484741B2
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JP
Japan
Prior art keywords
semiconductor
semiconductor region
region
depth
semiconductor substrate
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JP2009012610A
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English (en)
Japanese (ja)
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JP2010171221A (ja
JP2010171221A5 (https=
Inventor
野 昇太郎 小
藤 渉 齋
菜 名 羽田野
田 浩 史 大
辺 美 穂 渡
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
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Toshiba Corp
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Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP2009012610A priority Critical patent/JP5484741B2/ja
Priority to CN2010100040231A priority patent/CN101794816B/zh
Priority to US12/692,527 priority patent/US8159023B2/en
Publication of JP2010171221A publication Critical patent/JP2010171221A/ja
Publication of JP2010171221A5 publication Critical patent/JP2010171221A5/ja
Application granted granted Critical
Publication of JP5484741B2 publication Critical patent/JP5484741B2/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H10D12/461—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions
    • H10D12/481—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions having gate structures on slanted surfaces, on vertical surfaces, or in grooves, e.g. trench gate IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/028—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs
    • H10D30/0291—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/109—Reduced surface field [RESURF] PN junction structures
    • H10D62/111—Multiple RESURF structures, e.g. double RESURF or 3D-RESURF structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/393—Body regions of DMOS transistors or IGBTs 

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  • Insulated Gate Type Field-Effect Transistor (AREA)
JP2009012610A 2009-01-23 2009-01-23 半導体装置 Active JP5484741B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2009012610A JP5484741B2 (ja) 2009-01-23 2009-01-23 半導体装置
CN2010100040231A CN101794816B (zh) 2009-01-23 2010-01-14 半导体器件
US12/692,527 US8159023B2 (en) 2009-01-23 2010-01-22 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009012610A JP5484741B2 (ja) 2009-01-23 2009-01-23 半導体装置

Publications (3)

Publication Number Publication Date
JP2010171221A JP2010171221A (ja) 2010-08-05
JP2010171221A5 JP2010171221A5 (https=) 2013-03-28
JP5484741B2 true JP5484741B2 (ja) 2014-05-07

Family

ID=42353476

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009012610A Active JP5484741B2 (ja) 2009-01-23 2009-01-23 半導体装置

Country Status (3)

Country Link
US (1) US8159023B2 (https=)
JP (1) JP5484741B2 (https=)
CN (1) CN101794816B (https=)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5739813B2 (ja) * 2009-09-15 2015-06-24 株式会社東芝 半導体装置
JP2011204796A (ja) * 2010-03-24 2011-10-13 Toshiba Corp 半導体装置およびその製造方法
KR101216897B1 (ko) 2011-08-09 2012-12-28 주식회사 케이이씨 고전압 반도체 소자
KR101279222B1 (ko) 2011-08-26 2013-06-26 주식회사 케이이씨 고전압 반도체 소자
US9287371B2 (en) 2012-10-05 2016-03-15 Semiconductor Components Industries, Llc Semiconductor device having localized charge balance structure and method
US9219138B2 (en) 2012-10-05 2015-12-22 Semiconductor Components Industries, Llc Semiconductor device having localized charge balance structure and method
US10256325B2 (en) * 2012-11-08 2019-04-09 Infineon Technologies Austria Ag Radiation-hardened power semiconductor devices and methods of forming them
CN103199104B (zh) * 2013-03-05 2016-04-27 矽力杰半导体技术(杭州)有限公司 一种晶圆结构以及应用其的功率器件
SE1550821A1 (sv) * 2015-06-16 2016-11-22 Ascatron Ab SiC SUPER-JUNCTIONS
US9768247B1 (en) 2016-05-06 2017-09-19 Semiconductor Components Industries, Llc Semiconductor device having improved superjunction trench structure and method of manufacture
JP6254301B1 (ja) * 2016-09-02 2017-12-27 新電元工業株式会社 Ｍｏｓｆｅｔ及び電力変換回路
US10700191B2 (en) 2016-09-16 2020-06-30 Shindengen Electric Manufacturing Co., Ltd. MOSFET and power conversion circuit
WO2018087896A1 (ja) * 2016-11-11 2018-05-17 新電元工業株式会社 Ｍｏｓｆｅｔ及び電力変換回路
WO2018216222A1 (ja) * 2017-05-26 2018-11-29 新電元工業株式会社 Ｍｏｓｆｅｔ及び電力変換回路
JP2019054169A (ja) * 2017-09-15 2019-04-04 株式会社東芝 半導体装置
US11005354B2 (en) * 2017-11-17 2021-05-11 Shindengen Electric Manufacturing Co., Ltd. Power conversion circuit
CN110416285B (zh) * 2019-07-31 2024-06-07 电子科技大学 一种超结功率dmos器件
JP7807731B2 (ja) * 2022-03-22 2026-01-28 国立研究開発法人産業技術総合研究所 炭化珪素半導体装置および炭化珪素半導体装置の製造方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69838453D1 (de) * 1998-12-09 2007-10-31 St Microelectronics Srl Leistungsbauelement mit MOS-Gate für hohe Spannungen und diesbezügliches Herstellungsverfahren
EP1011146B1 (en) * 1998-12-09 2006-03-08 STMicroelectronics S.r.l. Method of manufacturing an integrated edge structure for high voltage semiconductor devices
JP3743395B2 (ja) 2002-06-03 2006-02-08 株式会社デンソー 半導体装置の製造方法及び半導体装置
JP4304433B2 (ja) * 2002-06-14 2009-07-29 富士電機デバイステクノロジー株式会社 半導体素子
JP3634830B2 (ja) * 2002-09-25 2005-03-30 株式会社東芝 電力用半導体素子
JP4904673B2 (ja) * 2004-02-09 2012-03-28 富士電機株式会社 半導体装置および半導体装置の製造方法
JP4851738B2 (ja) 2005-06-29 2012-01-11 新電元工業株式会社 半導体装置
WO2007122646A1 (en) 2006-04-21 2007-11-01 Stmicroelectronics S.R.L. Process for manufacturing a power semiconductor device and corresponding power semiconductor device
EP1873837B1 (en) * 2006-06-28 2013-03-27 STMicroelectronics Srl Semiconductor power device having an edge-termination structure and manufacturing method thereof
JP2008153620A (ja) * 2006-11-21 2008-07-03 Toshiba Corp 半導体装置
JP2008210899A (ja) * 2007-02-23 2008-09-11 Toshiba Corp 半導体装置及びその製造方法
JP4564509B2 (ja) * 2007-04-05 2010-10-20 株式会社東芝 電力用半導体素子
JP2008294028A (ja) * 2007-05-22 2008-12-04 Toshiba Corp 半導体装置

Also Published As

Publication number Publication date
JP2010171221A (ja) 2010-08-05
CN101794816B (zh) 2012-10-10
CN101794816A (zh) 2010-08-04
US20100187604A1 (en) 2010-07-29
US8159023B2 (en) 2012-04-17

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