TW201803125A - 垂直碳化矽金屬氧化物半導體場效電晶體 - Google Patents

垂直碳化矽金屬氧化物半導體場效電晶體 Download PDF

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TW201803125A
TW201803125A TW106110836A TW106110836A TW201803125A TW 201803125 A TW201803125 A TW 201803125A TW 106110836 A TW106110836 A TW 106110836A TW 106110836 A TW106110836 A TW 106110836A TW 201803125 A TW201803125 A TW 201803125A
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effect transistor
field effect
metal oxide
oxide semiconductor
intermediate layer
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湯瑪斯 賈克
沃夫岡 費勒
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羅伯特博斯奇股份有限公司
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Abstract

本發明提供一種垂直碳化矽金屬氧化物半導體場效電晶體(20)，其具有一源極端子(2)、一汲極端子(4)及一閘極區(36)，且具有配置於該源極端子(2)與該汲極端子(4)之間並具有第一類型摻雜的一磊晶層(22)，一水平延伸之中間層(24)嵌入於該磊晶層(22)中，該中間層包含具有不同於該第一類型摻雜之第二類型摻雜的區(40)。該垂直碳化矽金屬氧化物半導體場效電晶體(20)之區別特徵在於，至少該些具有第二類型摻雜之區(40)被導電地連接至該源極端子(2)。該閘極區(36)可配置於一閘極溝槽(39)中。

Description

垂直碳化矽金屬氧化物半導體場效電晶體
本發明係關於垂直碳化矽金屬氧化物半導體場效電晶體，亦即基於碳化矽生成之金屬氧化物半導體場效電晶體(metal oxide semiconductor field-effect transistor；MOSFET)，且其元件主要相對於彼此配置。特定言之，電流方向類似地基本上垂直定向。
半導體組件，尤其電源半導體組件(例如電源MOSFET)，具有不同指標待最佳化。舉例而言，高短路強度，亦即耐受呈無負載操作形式之短路情形而無受損，為所需的。低Rdson值(亦即呈導通狀態之汲極與源極之間的電阻)一般為有利的，以便減少電源損失。通常，在習知MOSFET中，兩個值與彼此直接相關：對於典型習知金屬氧化物半導體場效電晶體(metal oxide semiconductor field-effect transistor；MOSFET)(其在本文被認為是電源MOSFET之一實例)，應用基本MOSFET等式，根據該些等式飽和電流為
Figure TW201803125AD00001
此處，Vg指示施加之閘極電壓，Vth指示MOS通道之臨限電壓，且R*dson=Rdson-Rdrift指示線性範圍中之MOSFET之通道電阻。對於常數Kf
Figure TW201803125AD00002
根據先前技術針對MOSFET對於MOSFET獲得值Kf=1(針對線性操作平穩段開始時量測之Idsat)。
短路強度典型地為能量受限的，例如受限於輸入短路能量Esc,max之後Al金屬化之熔點，因此可達成之短路時間tscwt及施加電壓Uds直接視R*dson而定，因為
Figure TW201803125AD00003
在習知MOSFET中，R*dson降低因而自動導致短路強度降低，亦即R*dson及短路強度不可彼此獨立地最佳化。
在牽引應用中，tscwt>10μs的保證的短路強度為先前技術用於Si類1200V半導體，諸如絕緣閘極雙極電晶體(insulated-gate bipolar transistor；IGBT)。此值未藉由現行SiC MOSFET概念達成，且變得甚至更加難以達成，此係因為成本驅使的趨勢傾向於較低Rdson值。
參見，例如 「Short Circuit Robustness of 1200 V SiC Junction Transistors and power MOSFETs」, Siddarth Sundaresan等人(GeneSiCSemiconductor)ICSCRM 2015；「Repetitive Short-Circuit tests on SiC VMOS devices」, Maxime Berthou等人(Laboratoire Ampere，法國), ICSCRM 2015；「Concept with grounded Bottom layer from Mitsubishi」「Impact of Grounding the Bottom Oxide Protection Layer on the Short-Circuit Ruggedness of 4H-SiC TrenchMOSFETs」, R. Tanaka等人(Mitsubishi Electr.公司)ISPSD2014； 「Temperature-Dependent Short-Circuit Capability of Silicon Carbide Power MOSFETs」Z. Wang等人(田納西大學)IEEE TRANSACTIONS ON POWER ELECTRONICS，第31卷，第2期，2016年2月
另一個問題可為閘氧化物中之過高場。原則上，碳化矽(silicon carbide；SiC)上之閘氧化物與可比的Si組件相比在導電帶中具有較低帶偏移，因此作為穿隧電流之結果，發生衰減，即使在相對低閘極場強度下。對於SiC MOSFET，閘氧化物中合理的場強度處於約3MV/cm。遵從此界限值對於限制閘極場強度為至關重要的，尤其在反向偏壓操作中且特別是在溝槽裝置使設計措施成為必要的情況下，參見例如Kevin Matocha,「Challenges in SiC power MOSFET design」,Solid-State Electronics 52(2008)1631-1635；「High Performance SiC Trench Devices with Ultra-low Ron」,T Nakamura等人，2011 IEEE International Electron Devices Meeting第26.51-26.53頁。
根據先前技術，至少限制閘極場強度的可能性為已知的。舉例而言，閘氧化物之場強度可藉由引入具有深p植入之雙溝槽而降低。在此情形下，較深位置之p區靜電屏蔽實際溝槽MOSFET結構，參見例如Nakamura等人。
閘氧化物之場強度可類似地藉由在閘氧化物下方引入所謂的「p氣泡」的p摻雜區而降低至約4mV/cm，參見例如「High-Voltage Accumulation-Layer UMOSFET's in 4H-SiC」,J.Tan等人，IEEE ELECTRON DEVICE LETTERS，第19卷，第12期，1998年12月。
作為替代方案，上述兩種措施(雙溝槽，p氣泡)可組合， 參見Shinsuke Harada等人，「Determination of optimum structure of 4H-SiC Trench MOSFET」,2012年第24次電源半導體裝置及IC國際研討會會議記錄(Proceedings of the 2012 24th International Symposium on Power Semiconductor Devices and ICs)，第253頁及以下。作為另一變體，當p區植入極深時，可產生無雙溝槽之相對應摻雜剖面。
DE10201400613A1揭示垂直溝槽MOSFET，其在磊晶層內包含具有相反摻雜之補償層，此使得可能限制最大發生場強度。
本發明提供垂直SiC MOSFET，其具有源極端子、汲極端子及閘極區，且具有配置於源極端子與汲極端子之間且具有第一類型的摻雜的磊晶層，水平延伸的中間層嵌入於磊晶層中，該中間層包含具有不同於第一類型的摻雜的第二類型的摻雜的區，其中至少具有第二類型的摻雜的區以導電方式連接至源極端子。在習知MOS結構下方，因此存在另一平面，其包含至少具有與磊晶層之摻雜相反的摻雜的區。
中間層嵌入於磊晶層中尤其意指中間層在兩側均經由磊晶層包圍。因此可說中間層將磊晶層分隔成上部區，其一般位於中間層面朝源極端子之側面上；及下部區，其一般位於中間層面朝汲極端子之側面上。在特殊情形下，其他區或層可配置於中間層與磊晶層之上部及/或下部區之間。然而，類似地中間層可能直接鄰接磊晶層之上部及/或下部區，且在特殊情形下表面寬廣。磊晶層之上部及下部區具有相同摻雜濃度或不同摻雜濃度。
本發明之優勢
根據本發明之SiC MOSFET具有優勢，通過組件之電流可在短路之情況下有效限制。因此有可能產生具有尤其高的短路穩健性的組件，先前並未針對SiC技術獲得該些組件。
由於根據本發明之概念垂直地整合，因此額外結構不需要晶片上之額外間隔需求。
因此與習知組件相比本發明就Rdson*A而言為區域中性的。
此外，根據本發明之設計提供優勢，閘氧化物中之場強度限制於低於3MV/cm之位準，以便滿足組件壽命之迫切需求。因此，不僅電流可在短路之情況下受限，並且若發生施加之電壓在反向偏壓的情形下，閘氧化物可有效地屏蔽。
藉由屏蔽來自汲極場之MOS通道，由此獲得可靠性優勢，且此外可能減少呈飽和電流隨汲極電壓升高而升高之形式的短通道效應，其類似地有利於短路強度。
中間層亦有可能包含第一摻雜區及第二摻雜區兩者。藉由選擇不同區之尺寸標定及摻雜濃度，MOSFET之特性隨後可以受控方式調節。第一及第二摻雜兩者之區可延伸超過整個層厚度。
有利地，採取措施使得當施加小於或等於SiC MOSFET之反向偏壓電壓的電壓時，第二摻雜區不完全空乏。此可藉由重摻雜達成，例如至少5*1017/cm3。在此情形下摻雜宜盡可能突然地自一個區側向更換至另一區。換言之，盡可能的，在較弱摻雜或混合摻雜之情況下，不存在過渡區或僅極小過渡區。由於區具有第二類型之摻雜；藉由空乏此等區，提供顯著的抗衡電荷；在反向偏壓之情形下用於吸收反向偏壓電壓，MOSFET 之通道長度可減小。此有利地導致Rdson降低。
中間層宜有可能完全配置於閘極區下方。則獲得相對簡單的設計佈局。中間層配置於閘極區下方尤其意指中間層垂直地配置於閘極區與汲極區之間。閘極區之元件(例如閘極溝槽)則不與中間層交叉或中斷中間層。
根據本發明之一個較佳具體實例，採取措施使得中間層功能上與磊晶層一起形成接面閘極場效電晶體。在閘極斷開之靜態反向偏壓情形下，第一摻雜之區隨汲極電壓升高變得耗乏，亦即中間層中具有第一類型之摻雜的區中不再存在任何準中性帶，因此汲極電壓之進一步升高可基本上由JFET吸收。藉由接面閘極場效電晶體(亦稱為接面FET或JFET)，流過MOSFET之電流可隨後在短路之情況下有效限制。
區不完全空乏尤其意指即使在施加反向偏壓電壓之後在相關區中仍存在準中性帶。
此外，因此獲得另一設計參數，此係因為由於中間層或JFET吸收大部分反向偏壓電壓，MOSFET之上部中的MOS區域現可針對實質上較低反向偏壓電壓組態。在反向偏壓情形下提供耗乏之抗衡電荷，使得在實際MOS結構處僅存在實質上較低E場，且因此主體內需要較少抗衡電荷。此使得與先前技術相比可減小通道長度。
此藉由以一定方式選擇具有第二類型之摻雜之區的厚度及摻雜(NA=ppjfet)來達成，以使得漂移帶之電壓可至少經由具有第二類型之摻雜的區的電荷降低。此得到以下設計規則(對於恆定摻雜)：
Figure TW201803125AD00004
此處，ljfet為中間層之厚度，lEPI為磊晶層之厚度，NDEPI為磊晶層之摻雜濃度，ND為中間層之第一摻雜區之摻雜濃度，NA中間層之第二摻雜區之摻雜濃度，djfet為中間層之第一摻雜區之水平長度，且dpjfet為中間層之第二摻雜區之水平長度。摻雜比之有利特定選擇為例如ND=njfet>NEPI，NA=ppjfet>ND。
在中間層及EPI層中之截面中摻雜不為恆定之情況下，採用相對應的體積積分而非NA、ND及尺寸的乘積。
由於JFET功能，主體內之片材電荷密度可根據等式qbnew=qbold-qJFET+Delta3D減小。此處，qbnew為主體內根據本發明減小的片材電荷密度，qbold為習知MOSFET之主體內的片材電荷密度，如不具有JFET區之設計中將需要，qJFET為在部分空乏狀態下充當JFET區的中間層的最大電壓的有效電荷，對應於反向偏壓情形下的場分佈，且Delta3D為3D效應之適配術語以及充足反向偏壓強度之安全界限，使得主體至源極無擊穿(punch through)發生。
根據本發明之一個優化，與磊晶層相比具有第一類型之較重摻雜之過渡層沿源極端子方向及/或沿汲極端子方向垂直地鄰接中間層。此防止具有中間層之第二摻雜區之垂直pn接面在中間層上方及下方產生大垂直空間電荷區段或電流收縮。
此外與磊晶層相比具有第一類型之較重摻雜之過渡層宜沿源極端子方向垂直地鄰接磊晶層。換言之，過渡層鄰接磊晶層之上部區。同樣在此處，避免pn接面處之電流收縮。
出於相同原因，配置於源極端子與中間層之間的磊晶層的上 部宜具有第一類型的較重摻雜，尤其與配置於中間層與汲極端子之間的磊晶層的下部相比重2至4倍的第一類型的摻雜。
所描述之具有較強的(亦即更大量地濃縮)第一類型的摻雜的過渡層(其鄰接磊晶層)亦可稱為擴散層。有利地，在擴散層之組態中，設計規則遵從與簡單的磊晶層相比，引入的摻雜的總劑量保持恆定。換言之，當濃度在一個位置增加時，在另一位置可選擇較低摻雜濃度以便提供平衡。
根據本發明之一個優化，與磊晶層相比具有第一類型之較重摻雜之過渡區沿源極端子方向及/或沿汲極端子方向垂直地鄰接中間層的第一摻雜區，磊晶層至少部分鄰接中間層的第二摻雜區。相比於上文所述之具體實例，此處未使用完整擴散層，而是鄰接中間層之第二摻雜區的過渡區或擴散區。此導致MOSFET之接通狀態電阻之進一步優化。實務上，所描述之設計可例如藉助於在不同深度之多個植入以及遮罩間隔物實施。
根據本發明之一個特定組態，中間層之第一摻雜區具有雙漏斗形剖面或沙漏形剖面。換言之，中間層之第一摻雜區之水平長度分別自上方及下方朝向中間層中心變窄。崩潰電壓亦可藉由此措施增加。當然若幾何學上為可能的，則所描述之所有措施可與彼此組合。
根據本發明之一個有利組態，接面閘極場效電晶體之通道與MOSFET之通道相對於彼此垂直地配置。接面閘極場效電晶體之週期性(單元間距)在此情形下可對應於溝槽MOS單元之單元間距的一半。
以此方式，接面閘極場效電晶體與電阻RDSon之比重可減至最小。自理想位置開始，組件之功能在此情形下相對於MOS區對JFET區 之側向位移(解調整(deadjustment))或dpjfet值的變化相對不敏感。
有利地，功能性接面閘極場效電晶體與MOSFET串聯電連接。此處，MOSFET意指組件內之習知功能性MOSFET，亦即一般組件之區配置於中間層上方。以此方式，使得針對單個組件中短路強度組態之MOSFET-JFET級聯之整合變為可能。此組態之一個優勢為JFET經由MOS區之電壓降與MOSFET具有負反饋，且因此存在電流上限：若汲極電流升高至一定範圍，使得跨越MOS區之電壓降變為大約JFET之夾止電壓的程度，則JFET決定性地促成電流限制。汲極電流隨後經由達成之JFET之臨限條件(夾止電壓)限制。因此避免通道長度調變及因此在高汲極電壓之情形下MOSFET之進一步提高的飽和電流。臨限之達成可藉由經由分別摻雜MOS區之電壓降，以及夾止電壓調節於特定界限值內。
JFET區內或中間層下方之JFET通道亦可比MOS單元具有不同週期性及/或不同定向。換言之，配置於晶片之特定寬度上之MOS結構的元件在數目上不同且與中間層的元件隔開。亦有可能在MOS平面之元件(亦即例如閘極電極)之定向與中間體平面之元件之定向之間提供任何所需的角度。
此外，其他JFET閘極形式為可能的，例如蜂巢結構、正方形結構或其類似者。中間層之第一摻雜區之典型長度處於大約500nm。有利地，中間層之第二摻雜區之橫向長度略微大於第一摻雜區之橫向長度，例如大1.2或1.5倍。MOS結構之每單位單元(亦即例如每個閘極溝槽)之第一及第二摻雜區之數目則經由此等MOS結構之間隔與中間層之週期性之間的比率給定。
MOS結構可呈線性結構或二維柵格結構存在於晶片上(平面視圖，或佈局)。在JFET層之平面或中間平面內，在此情形下亦可存在三維結構，諸如正方形柵格、蜂巢或六邊形柵格。原則上，此等可與任何所需之類似週期性JFET柵格結構組合。
本發明之有利改進描述於附屬申請專利範圍及實施方式中。
1‧‧‧MOSFET
2‧‧‧源極端子/源極接點/源極板
4‧‧‧汲極端子/閘極接點
6‧‧‧閘極端子
8‧‧‧MOS區
10‧‧‧漂移區
12‧‧‧導電連接
14‧‧‧JFET閘極
16‧‧‧接面閘極場效電晶體的電路符號/接面閘極場效電晶體
17‧‧‧接面閘極場效電晶體的源極端子/接點
18‧‧‧接面閘極場效電晶體的汲極端子
19‧‧‧接面閘極場效電晶體的閘極端子/接點
20‧‧‧垂直碳化矽金屬氧化物半導體場效電晶體/MOSFET
21‧‧‧基板
22‧‧‧磊晶層/n摻雜磊晶層/中間層
22.1‧‧‧磊晶層上部區
22.2‧‧‧磊晶層下部區
24‧‧‧中間層/中間平面/JFET區
24.1‧‧‧上層
24.2‧‧‧中層
24.3‧‧‧下層
26‧‧‧金屬化物/汲極
28‧‧‧金屬化物/源極接點
30‧‧‧金屬化物
34‧‧‧n摻雜源極區
36‧‧‧閘極區/閘電極
38‧‧‧絕緣層
39‧‧‧閘極溝槽
40‧‧‧具有第二類型摻雜之區/p摻雜區/n摻雜區
40.1‧‧‧p摻雜區
40.2‧‧‧p摻雜區
40.3‧‧‧p摻雜區
42‧‧‧第一摻雜區/n摻雜區/n層/p區域
42.1‧‧‧n摻雜區
42.2‧‧‧n摻雜區
50.1‧‧‧過渡層
50.2‧‧‧過渡層
50.3‧‧‧第三過渡層
52.1‧‧‧過渡區/擴散區
52.2‧‧‧過渡區/擴散區
52.3‧‧‧第三過渡區/擴散區
60‧‧‧p摻雜橫向腹板
62.1‧‧‧p摻雜區
62.2‧‧‧p摻雜區
64‧‧‧p主體
101‧‧‧曲線
102‧‧‧曲線
103‧‧‧曲線
104‧‧‧曲線
105‧‧‧曲線
107‧‧‧習知MOSFET之輸出特性曲線
108‧‧‧根據本發明之MOSFET之輸出特性曲線
109‧‧‧根據本發明之MOSFET之輸出特性曲線
Int1‧‧‧線積分
將藉助於圖式及以下描述更詳細闡述本發明之例示性具體實例。在圖式中：圖1展示本發明之一個具體實例之等效電路圖，圖2展示貫穿根據本發明之MOSFET之一個例示性具體實例的橫截面，圖3展示圖2之中間層之詳細表示，圖4展示圖示，其中繪製可能的摻雜濃度，圖5展示另一圖示，其中繪製可能的摻雜濃度，圖6展示貫穿一個具體實例之橫截面，其中示意性地繪製線積分之路徑，圖7展示貫穿具有過渡層之具體實例之橫截面，圖8展示圖7中所示之例示性具體實例之優化，圖9展示本發明之另一例示性具體實例，圖10展示中間層之組態之替代可能性，圖11展示三個具體實例，其不同之處在於中間層上方之磊晶層之組態，圖12展示貫穿類似於圖2及圖3中展示之例示性具體實例的例示性具體實例的縱向截面及橫截面， 圖13展示貫穿圖11之例示性具體實例之水平截面，圖14展示類似於圖13之圖示，圖15展示根據本發明之MOSFET之兩個其他具體實例，圖16展示本發明之典型例示性具體實例，且圖17展示概念對不同電晶體概念之適用性，且圖18展示例示性具體實例之輸出特性曲線。
圖1展示本發明之一個具體實例之等效電路圖。其中可看出MOSFET 1之典型元件，亦即源極端子2、汲極端子4及閘極端子6。另外指示兩個電阻，亦即MOS區8之電阻及漂移區10之電阻。藉由源極端子2與JFET閘極14之間的導電連接12，形成接面閘極場效電晶體，其有效限制通過組件1之大電流。
若跨MOS區6與8之電壓降大於或等於接面閘極場效電晶體之夾止電壓值，則後者吸收額外汲極電壓升高。因此避免通道長度調變及因此在高汲極電壓之情形下MOSFET之進一步提高的飽和電流。接面閘極場效電晶體(或JFET)之確切功能將在下文進一步藉助於其他圖示闡述。
圖2展示根據本發明之MOSFET 20之一個例示性具體實例的橫截面。此處僅展示組件之部分，且組件可典型地由大量單位單元組成。類似地，MOSFET 20之部分元件未完全展現。
n摻雜磊晶層22(中間層24繼而嵌入其中)塗覆於典型地重摻雜的基板21上。實務上，磊晶層劃分成上部區22.1及下部區22.2。在底部，金屬化物26構成汲極端子。中間層24首先在無其他細節之情況下展 現於圖2中。在圖之上部區中展現溝槽MOSFET 20之典型元件：可看出金屬化物28作為源極接點2且金屬化物30作為閘極接點。此外，進一步展現配置於溝槽(亦即溝槽結構)中之n摻雜源極區34及閘極區36。閘極區36經由絕緣層38與源極區32及磊晶層22分隔開。若電壓施加於源極接點2與閘極接點4之間，則當高於MOSFET 20之臨限電壓之電壓施加於閘極接點32且相對於源極接點28為正的電壓施加於汲極26時，電流自圖中頂部向下垂直地流過MOSFET 20。
圖3展示圖2之中間層24之詳細表示。在圖之上部及下部區中，進一步可見鄰接中間層24之磊晶層的上部及下部22.1、22.2。明顯中間層24在水平或側向定向上具有特殊結構。因此，中間層中存在p摻雜區40.1、40.2及40.3以及n摻雜區42.1及42.2。此處亦應指出如MOSFET，展現之例示性具體實例亦可藉由各自地相反摻雜產生。
組件20之功能之重要設計參數為p摻雜區40及n摻雜區42的尺寸，以及中間層22的厚度ljfet。中間層22自身總體上形成所謂JFET區。p摻雜區40之寬度由dpjfet指示，且n摻雜區42之寬度由pjfet指示。繼而示意性地指示導電連接12，其建立p摻雜區40與源極端子2之間的電連接。類似地示意性地指示且僅為了說明功能原理的是接面閘極場效電晶體的電路符號16，其源極端子17在圖中位於磊晶層22的上部區，而接面閘極場效電晶體16的汲極端子18位於磊晶層22的下部區。接面閘極場效電晶體之閘極端子19連接至p摻雜區40。此等p摻雜區40因此構成接面閘極場效電晶體16之閘極。
另一個重要的設計參數為區40及42的摻雜。圖4展示圖， 其中n摻雜區42之可能的摻雜濃度繪製為針對不同JFET夾止電壓
Figure TW201803125AD00005
的n摻雜區42的寬度的函數，亦即JFET的夾止電壓可經由參數的相對應選擇而調節。展現之所有值在此情形下針對5*1018/cm3之p摻雜區的摻雜濃度計算。曲線101適用於針對各別摻雜濃度之djfet之最小值。曲線102適用於JFET夾止電壓
Figure TW201803125AD00006
=5V，曲線103適用於JFET夾止電壓
Figure TW201803125AD00007
=10V，曲線104適用於JFET夾止電壓
Figure TW201803125AD00008
=20V，且曲線105適用於JFET夾止電壓
Figure TW201803125AD00009
=50V。
圖5展示與圖4類似之圖，其中差別在於針對p摻雜區採用5*1017/cm3之摻雜濃度。
JFET區之夾止電壓
Figure TW201803125AD00010
(其施加於接點17與19之間(參見例如圖2及圖3))特徵在於n側空間電荷區段同等地與djfet一樣大，亦即n摻雜區42之n大部分電荷載子之準中性區域變為零。為了考慮短路行為，以一定方式選擇深度tjfet及MOS區內之n摻雜，使得用於施加之電壓Uds=Ucc之情況下的所需飽和電流IDsat，其典型地對應於50%之組件的額定反向偏壓強度，用於n大部分電荷載子電位下降「UMOS」，直至達成JFET區24之n開口，其設定JFET電流限制狀態。換言之，環繞n層42之pn接面之空間電荷區段經由初始電壓增加至其大於或等於djfet之程度。UMOS適當地具有至少1V、典型地5V與20V之間的值。有利上限可為反向偏壓電壓之20%。應用以下
Figure TW201803125AD00011
 線積分之路徑在圖6中指示為Int1。線積分Int1自源極區34延伸穿過磊晶層22至n摻雜區42。
以一定方式選擇JFET區內n區域40及p區域42之側向長度及摻雜，使得在Uds=0V之情況下，n開口djfet大於兩倍NA與ND之間的pn接面的n側空間電荷區段，因此在無電壓狀態下n大部分電荷載子保持於JFET區的n區域內部用於電流傳輸。
在突變的一維pn接合點的情況下，相應地獲得以下典型的理想設計規則：
Figure TW201803125AD00012
djfet之界限值分別對應於最低曲線，在圖4及圖5中指示為djfet min。對於實際空間幾何結構及摻雜分佈，相對應關係不可在分析上展現，但同等地存在井且可在數值上解析。在此情形下Ubi指示「內置式」電壓，其甚至在無外部施加電壓之情況下跨越pn接面下降，此係因為價態及傳導帶中之摻雜。NA為p摻雜濃度且ND為n摻雜濃度。
圖7展示貫穿具有過渡層50.1、50.2之具體實例之橫截面，該些過渡層分別配置於中間層24上方及下方。過渡層50.1、50.2各自具有分別與磊晶層22.1、22.2相比之較重濃度的n摻雜。該組態防止在與p摻雜區40之垂直pn接面處形成大空間電荷區段或電流收縮。此外pijfet指示為JFET結構之側向尺寸。
圖8展示圖6中所示之例示性具體實例之優化，其區別在於第三過渡層50.3，該過渡層配置於源極區34與磊晶層22之間。類似地可見三個過渡層之摻雜nsp1、nsp2及nsp3可不同。
圖9展示變形，其中過渡層未覆蓋MOSFET之整個橫截面，但替代地僅在前述層中之區中延伸。其因此稱為過渡區或擴散區52.1、 52.2、52.3。過渡區52.1轉而位於中間層24上方，在中間層24與磊晶層22之間的區中。過渡區52.2位於中間層24下方，在中間層24與磊晶層22之間。過渡區52.1、52.2分別涵括兩個p摻雜區40.1、40.2之間的n摻雜區42。此外，其在中間層24之n摻雜區兩側上覆蓋小部分相鄰p摻雜區40.1、40.2。過渡區52.1、52.2超出p摻雜區40.1、40.2之間的「間隙」的長度在此情形下約為中間層中的n摻雜區寬度的一半大。
第三過渡區52.3配置於其中閘極區36、p主體64及磊晶層22彼此鄰接的區中。其具有相對較小長度。可見NA及ND(亦即ppjfet及njfet)、NDepi以及MOSFET主體與JFET區之間的摻雜不需恆定，但可替代地具有位置依賴性。
圖10展示中間層24之組態之另一種可能性。同樣在此處，目標為避免電流收縮。在展示之例示性具體實例中，此藉由將p摻雜區40「設定回」稍微在磊晶層22附近來達成。中間層24在此情形下可理解為由三個獨立層24.1、24.2、24.3組成，其原則上建構相同但不同之處在於其側向長度。中層24.2基本上如同已描述之例示性具體實例建構。其可為三個層24.1、24.2、24.3之最厚層。特定言之，中層24.2之n摻雜區42.2之寬度等於已描述之例示性具體實例中n摻雜區40之寬度。然而，n摻雜區42之上層24.1及下層24.3具有較大長度。總體而言，對於n摻雜區40獲得大約沙漏形或雙漏斗形橫截面。
圖11展示三個具體實例，其就中間層24上方之磊晶層22.1之組態而言不同。在圖之左側區中展示例示性具體實例，其中p摻雜區62.1延伸直至中間層24引入至閘極溝槽39下方之磊晶層22中。換言之，閘極 溝槽39與中間層24之間的區主要地填充有p摻雜材料。中間層24之位於閘極溝槽39下方之區類似地由p摻雜材料組成。與上文所述之具體實例相比，因此n摻雜材料已藉由閘極溝槽39下方之p摻雜材料替換。
在圖11之中心區中，另一p摻雜區62.2配置於p主體區64下方。此區亦基本上同等地配置於中間層24之p摻雜40上方。在圖11之右側區中展示例示性具體實例，其使兩種形式彼此組合，亦即，其包含p摻雜區62.1及p摻雜區62.2兩者。圖11中所示之所有具體實例具有優勢，可獲得不位於通道區中之p電荷。
圖12展示貫穿類似於圖2及圖3中展示之例示性具體實例的例示性具體實例的縱向截面及橫截面。垂直延伸之虛線指示圖12之右側區中展現之截面的截面平面。可見p摻雜區40以導電方式連接至源極板2。此外可見配置於閘極溝槽39中之閘電極36已部分中斷以用於接觸。在工業術語中，接觸可例如藉助於溝槽39中之接觸植入物以及p摻雜區之間的p摻雜橫向腹板(transverse webs)60實現。此等橫向腹板60展示於圖13中。
類似於藉助深接觸植入物的手段之接觸是可能的。在每個MOS單元之兩個JFET通道平行延伸之情況下，則橫向腹板不必須為p區之電連接。在此情形下該接觸不限制為JFET結構平行於溝槽延伸，但亦可在JFET柵格(JFET區之p區域)與接觸組態之間的觸點處逐點進行。可類似地設想主動MOS單元外部之p區的接觸。
圖13展示沿圖12之水平虛線之水平截面。截面因此延伸穿過中間層24且與其平行。自身位於展現之平面上方的閘極區36指示為虛線。在p摻雜區40之垂直接觸已藉助於溝槽39之中斷實現之後，此處可看 出單獨的p摻雜區40藉由中斷之中間層24之n摻雜區42彼此連接。
圖14展示類似於圖13之圖示。藉助於閘極區36(轉而指示為虛線)，可看出中間平面24可藉由相對於MOSFET之剩餘部分的任何所需角度α旋轉。換言之，在例如閘極溝槽39與中間層24之n摻雜區42之間可存在例如20°、45°或甚至90°的角度。然而，當然，中間層24之n摻雜區42亦可平行於閘極區39延伸。類似地不同週期性為可能的。
圖15展示根據本發明之MOSFET 20之兩個具體實例，其僅在中間層24之結構方面不同，且在此情形下不同之處繼而在於中間層24之n摻雜區42及p摻雜區40的間隔及數目。在圖之左側區展示一實施例，在中間層24中每個MOS單元僅具有一個n摻雜區42。相反地，圖之右側部分展現之例示性具體實例每單位單元具有五個n摻雜區42，其中之一者居中位於閘極溝槽39下方，且由於僅展示單元之二分之一，因此僅展現一半。位於n摻雜區42之間的p摻雜區40經組態以稍微寬於n摻雜區40。
圖16展示典型例示性具體實例。所有重要尺寸再次說明於圖中。編號自其他圖應用已知。
圖17展示概念對不同電晶體概念之適用性。已知之溝槽MOSFET中之整合可見於圖的左側部分。在圖之中心部分，可見具有根據本發明之中間層24之雙擴散金屬氧化物半導體場效電晶體(double-diffused metal oxide semiconductor field-effect transistor；DMOS)。在圖之右側部分展現具有根據本發明之中間層24之V溝槽MOS場效電晶體(V-grooved MOS field-effect transistor；VMOS)。
圖18展示習知MOSFET(107)與根據本發明之兩個MOSFET (108)、(109)的輸出特性曲線的比較。在習知MOSFET中，隨汲極電壓升高可觀測到飽和電流顯著升高。在根據本發明之MOSFET中，在低汲極電壓下可觀測到強的電流升高(亦即良好的接通狀態電阻)。對於較高汲極電壓，發生急劇轉變成幾乎水平的特性曲線。在汲極電壓達到接面閘極場效電晶體之夾止電壓時，發生轉變。視組態及設計而定，飽和電流可針對高汲極電壓(亦即高於轉變電壓之電壓)調節至不同值，如藉由比較根據本發明之兩個MOSFET特性曲線可見。有利地，以一定方式選擇JFET之夾止電壓之位置，使得在MOSFET之接通狀態下該夾止電壓明顯位於典型接通狀態電壓上方，但適當地不超過MOSFET的反向偏壓電壓的20%。
在所描述之所有例示性具體實例中，摻雜之符號當然可在不背離根據本發明之概念的情況下互換。換言之，所有描述之n摻雜可由p摻雜替換，且反之亦然。
2‧‧‧源極板
4‧‧‧汲極端子
20‧‧‧垂直碳化矽金屬氧化物半導體場效電晶體/MOSFET
22‧‧‧磊晶層
24‧‧‧中間層
36‧‧‧閘電極
39‧‧‧閘極溝槽
40‧‧‧p摻雜區

Claims (14)

  1. 一種垂直碳化矽金屬氧化物半導體場效電晶體(20)，其具有一源極端子(2)、一汲極端子(4)及一閘極區(36)，且具有配置於該源極端子(2)與該汲極端子(4)之間並具有第一類型摻雜的一磊晶層(22)，一水平延伸之中間層(24)嵌入於該磊晶層(22)中，該中間層包含具有不同於該第一類型摻雜之第二類型摻雜的區(40)，其中，至少該些具有第二類型摻雜的區(40)被導電地連接至該源極端子(2)。
  2. 如申請專利範圍第1項之垂直碳化矽金屬氧化物半導體場效電晶體(20)，其中該中間層(24)包含第一摻雜區(42)及第二摻雜區(40)兩者。
  3. 如申請專利範圍第1項或第2項之垂直碳化矽金屬氧化物半導體場效電晶體(20)，其中當施加小於或等於該碳化矽金屬氧化物半導體場效電晶體(20)之反向偏壓之電壓時，該些第二摻雜區(40)未完全空乏。
  4. 如申請專利範圍第1項或第2項之垂直碳化矽金屬氧化物半導體場效電晶體(20)，其中該中間層(24)完全配置於該閘極區(36)下方。
  5. 如申請專利範圍第1項或第2項之垂直碳化矽金屬氧化物半導體場效電晶體(20)，其中該中間層(24)在功能上與該磊晶層(22)一起形成一接面閘極場效電晶體。
  6. 如申請專利範圍第5項之垂直碳化矽金屬氧化物半導體場效電晶體(20)，其中該接面閘極場效電晶體之夾止電壓在介於1V與該碳化矽金屬氧化物半導體場效電晶體(20)之崩潰電壓之50%之間的範圍內。
  7. 如申請專利範圍第1項或第2項之垂直碳化矽金屬氧化物半導體場效 電晶體(20)，其中與該磊晶層(22)相比具有較重該第一類型摻雜之一過渡層(50.1，50.2)在該源極端子(2)之方向上及/或在該汲極端子(4)之方向上垂直地鄰接該中間層(24)。
  8. 如申請專利範圍第1項或第2項之垂直碳化矽金屬氧化物半導體場效電晶體(20)，其中與該磊晶層(22)相比具有較重該第一類型摻雜之一過渡層(50.3)在該源極端子(2)之方向上垂直地鄰接該磊晶層(22)。
  9. 如申請專利範圍第1項或第2項之垂直碳化矽金屬氧化物半導體場效電晶體(20)，其中配置於該源極端子(2)與該中間層(24)之間的該磊晶層之一上部(22.1)具有比配置於該中間層(24)與該汲極端子(4)之間的該磊晶層之一下部(22.2)重的該第一類型摻雜，特別是重2至4倍的該第一類型摻雜。
  10. 如申請專利範圍第1項或第2項之垂直碳化矽金屬氧化物半導體場效電晶體(20)，其中與該磊晶層(22)相比具有較重該第一類型摻雜的過渡區(52)在該源極端子(2)之方向上及/或在該汲極端子(4)之方向上垂直地鄰接該中間層(24)的該些第一摻雜區(42)，該磊晶層(22)至少部分鄰接該中間層(24)的該些第二摻雜區(40)。
  11. 如申請專利範圍第1項或第2項之垂直碳化矽金屬氧化物半導體場效電晶體(20)，其中該中間層(24)的該些第一摻雜區(42)具有一雙漏斗形剖面或一沙漏形剖面。
  12. 如申請專利範圍第5項之垂直碳化矽金屬氧化物半導體場效電晶體(20)，其中該接面閘極場效電晶體之一通道(56)與該金屬氧化物半導體場效電晶體之一通道(58)相對於彼此垂直地配置。
  13. 如申請專利範圍第5項之垂直碳化矽金屬氧化物半導體場效電晶體(20)，其中該接面閘極場效電晶體與該金屬氧化物半導體場效電晶體串聯電連接。
  14. 一種用於車輛之控制裝置，其包含如申請專利範圍第1項至第13項中任一項之垂直碳化矽金屬氧化物半導體場效電晶體(20)。
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