JP5479773B2 - 電子機器 - Google Patents

電子機器 Download PDF

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Publication number
JP5479773B2
JP5479773B2 JP2009110344A JP2009110344A JP5479773B2 JP 5479773 B2 JP5479773 B2 JP 5479773B2 JP 2009110344 A JP2009110344 A JP 2009110344A JP 2009110344 A JP2009110344 A JP 2009110344A JP 5479773 B2 JP5479773 B2 JP 5479773B2
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JP
Japan
Prior art keywords
region
insulating film
film
island
memory cell
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Expired - Fee Related
Application number
JP2009110344A
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English (en)
Japanese (ja)
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JP2009295971A5 (https=
JP2009295971A (ja
Inventor
良信 浅見
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2009110344A priority Critical patent/JP5479773B2/ja
Publication of JP2009295971A publication Critical patent/JP2009295971A/ja
Publication of JP2009295971A5 publication Critical patent/JP2009295971A5/ja
Application granted granted Critical
Publication of JP5479773B2 publication Critical patent/JP5479773B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/10—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the top-view layout
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0411—Manufacture or treatment of FETs having insulated gates [IGFET] of FETs having floating gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H10D30/681—Floating-gate IGFETs having only two programming levels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates

Landscapes

  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
  • Read Only Memory (AREA)
  • Thin Film Transistor (AREA)
JP2009110344A 2008-05-09 2009-04-30 電子機器 Expired - Fee Related JP5479773B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2009110344A JP5479773B2 (ja) 2008-05-09 2009-04-30 電子機器

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2008123583 2008-05-09
JP2008123583 2008-05-09
JP2009110344A JP5479773B2 (ja) 2008-05-09 2009-04-30 電子機器

Publications (3)

Publication Number Publication Date
JP2009295971A JP2009295971A (ja) 2009-12-17
JP2009295971A5 JP2009295971A5 (https=) 2012-04-19
JP5479773B2 true JP5479773B2 (ja) 2014-04-23

Family

ID=41264670

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009110344A Expired - Fee Related JP5479773B2 (ja) 2008-05-09 2009-04-30 電子機器

Country Status (6)

Country Link
US (1) US8193574B2 (https=)
JP (1) JP5479773B2 (https=)
KR (1) KR101508492B1 (https=)
CN (1) CN102017129B (https=)
TW (1) TWI482269B (https=)
WO (1) WO2009136615A1 (https=)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8198666B2 (en) * 2009-02-20 2012-06-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including a nonvolatile memory element having first, second and third insulating films
WO2011118076A1 (ja) * 2010-03-23 2011-09-29 シャープ株式会社 半導体装置、アクティブマトリクス基板、及び表示装置
CN102709290B (zh) * 2012-05-22 2016-08-03 上海华虹宏力半导体制造有限公司 存储器及其形成方法
US9117525B2 (en) 2012-09-12 2015-08-25 Kabushiki Kaisha Toshiba Nonvolatile semiconductor memory device and method of manufacturing the same
KR20140081412A (ko) * 2012-12-21 2014-07-01 삼성디스플레이 주식회사 박막 트랜지스터 표시판 및 그 제조 방법
CN103199116B (zh) 2013-03-29 2016-04-27 京东方科技集团股份有限公司 悬浮栅晶体管及其制作方法、应用方法、显示器驱动电路
JP2016039226A (ja) * 2014-08-07 2016-03-22 ルネサスエレクトロニクス株式会社 半導体装置
US10096718B2 (en) 2016-06-17 2018-10-09 Semiconductor Energy Laboratory Co., Ltd. Transistor, electronic device, manufacturing method of transistor
JP2019220530A (ja) * 2018-06-18 2019-12-26 株式会社ジャパンディスプレイ 半導体装置
TWI897022B (zh) * 2023-09-01 2025-09-11 新唐科技股份有限公司 半導體結構及其形成方法
CN119947103A (zh) 2023-11-02 2025-05-06 株式会社半导体能源研究所 半导体装置

Family Cites Families (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3136517C2 (de) * 1980-09-26 1985-02-07 Tokyo Shibaura Denki K.K., Kawasaki, Kanagawa Nichtflüchtige Halbleiter-Speichervorrichtung
JPH01128472A (ja) * 1987-11-13 1989-05-22 Toshiba Corp 半導体不揮発性記憶装置
JPH088315B2 (ja) * 1989-03-08 1996-01-29 富士通株式会社 半導体装置の製造方法及び半導体装置
JP2563683B2 (ja) * 1990-03-08 1996-12-11 松下電子工業株式会社 不揮発性半導体記憶装置およびその製造方法
JP3507761B2 (ja) * 1990-07-12 2004-03-15 株式会社ルネサステクノロジ 半導体集積回路装置
JPH06334195A (ja) * 1993-05-18 1994-12-02 Nippon Steel Corp 不揮発性半導体記憶装置
JPH07130893A (ja) * 1993-11-05 1995-05-19 Sony Corp 半導体装置及びその製造方法
TW326553B (en) 1996-01-22 1998-02-11 Handotai Energy Kenkyusho Kk Semiconductor device and method of fabricating same
US5886376A (en) * 1996-07-01 1999-03-23 International Business Machines Corporation EEPROM having coplanar on-insulator FET and control gate
JP3183326B2 (ja) * 1996-07-17 2001-07-09 日本電気株式会社 読出専用半導体記憶装置
US7602007B2 (en) 1997-04-28 2009-10-13 Yoshihiro Kumazaki Semiconductor device having controllable transistor threshold voltage
JPH1187664A (ja) 1997-04-28 1999-03-30 Nippon Steel Corp 半導体装置及びその製造方法
JP2006013534A (ja) 1997-07-08 2006-01-12 Sony Corp 半導体不揮発性記憶装置の製造方法
US6005270A (en) 1997-11-10 1999-12-21 Sony Corporation Semiconductor nonvolatile memory device and method of production of same
TW518637B (en) 1999-04-15 2003-01-21 Semiconductor Energy Lab Electro-optical device and electronic equipment
JP2001135736A (ja) * 1999-11-08 2001-05-18 Nec Corp 不揮発性半導体記憶装置及びその製造方法
JP4663094B2 (ja) 2000-10-13 2011-03-30 株式会社半導体エネルギー研究所 半導体装置
JP4776801B2 (ja) 2001-04-24 2011-09-21 株式会社半導体エネルギー研究所 メモリ回路
TW559814B (en) 2001-05-31 2003-11-01 Semiconductor Energy Lab Nonvolatile memory and method of driving the same
JP4859292B2 (ja) * 2001-07-02 2012-01-25 富士通セミコンダクター株式会社 半導体集積回路装置およびｎａｎｄ型不揮発性半導体装置
JP4281331B2 (ja) * 2002-01-21 2009-06-17 株式会社デンソー 不揮発性半導体記憶装置
JP2004165182A (ja) * 2002-11-08 2004-06-10 Ricoh Co Ltd 半導体装置
JP2006339554A (ja) * 2005-06-06 2006-12-14 Sanyo Electric Co Ltd 不揮発性半導体記憶装置及びその動作方法
EP1837917A1 (en) 2006-03-21 2007-09-26 Semiconductor Energy Laboratory Co., Ltd. Nonvolatile semiconductor memory device
EP1837900A3 (en) 2006-03-21 2008-10-15 Semiconductor Energy Laboratory Co., Ltd. Nonvolatile semiconductor memory device
JP5164404B2 (ja) 2006-03-21 2013-03-21 株式会社半導体エネルギー研究所 不揮発性半導体記憶装置
US8629490B2 (en) * 2006-03-31 2014-01-14 Semiconductor Energy Laboratory Co., Ltd. Nonvolatile semiconductor storage device with floating gate electrode and control gate electrode
JP5483660B2 (ja) * 2006-06-01 2014-05-07 株式会社半導体エネルギー研究所 半導体装置
US7596024B2 (en) * 2006-07-14 2009-09-29 Semiconductor Energy Laboratory Co., Ltd. Nonvolatile memory
US8188535B2 (en) 2008-05-16 2012-05-29 Semiconductor Energy Laboratory Co., Ltd. Nonvolatile semiconductor memory device and manufacturing method thereof

Also Published As

Publication number Publication date
US20090278188A1 (en) 2009-11-12
KR20110010762A (ko) 2011-02-07
TWI482269B (zh) 2015-04-21
CN102017129B (zh) 2013-10-23
CN102017129A (zh) 2011-04-13
KR101508492B1 (ko) 2015-05-18
JP2009295971A (ja) 2009-12-17
WO2009136615A1 (en) 2009-11-12
US8193574B2 (en) 2012-06-05
TW200952160A (en) 2009-12-16

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