JP5479773B2 - 電子機器 - Google Patents
電子機器 Download PDFInfo
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- JP5479773B2 JP5479773B2 JP2009110344A JP2009110344A JP5479773B2 JP 5479773 B2 JP5479773 B2 JP 5479773B2 JP 2009110344 A JP2009110344 A JP 2009110344A JP 2009110344 A JP2009110344 A JP 2009110344A JP 5479773 B2 JP5479773 B2 JP 5479773B2
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- 239000004065 semiconductor Substances 0.000 claims description 182
- 239000012535 impurity Substances 0.000 description 94
- 239000000758 substrate Substances 0.000 description 39
- 230000008878 coupling Effects 0.000 description 30
- 238000010168 coupling process Methods 0.000 description 30
- 238000005859 coupling reaction Methods 0.000 description 30
- 238000000034 method Methods 0.000 description 29
- 229910052710 silicon Inorganic materials 0.000 description 26
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 25
- 239000010703 silicon Substances 0.000 description 25
- 230000015572 biosynthetic process Effects 0.000 description 24
- 230000002829 reductive effect Effects 0.000 description 23
- 239000007789 gas Substances 0.000 description 14
- 238000004544 sputter deposition Methods 0.000 description 13
- 229910052782 aluminium Inorganic materials 0.000 description 12
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 12
- 229910052581 Si3N4 Inorganic materials 0.000 description 11
- 238000005229 chemical vapour deposition Methods 0.000 description 11
- 229910052751 metal Inorganic materials 0.000 description 11
- 239000002184 metal Substances 0.000 description 11
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 11
- 239000010936 titanium Substances 0.000 description 11
- 238000004519 manufacturing process Methods 0.000 description 10
- 230000003647 oxidation Effects 0.000 description 10
- 238000007254 oxidation reaction Methods 0.000 description 10
- 229910052814 silicon oxide Inorganic materials 0.000 description 10
- 238000005530 etching Methods 0.000 description 9
- 239000000463 material Substances 0.000 description 9
- 239000002356 single layer Substances 0.000 description 9
- 239000011521 glass Substances 0.000 description 8
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 7
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 7
- 230000004888 barrier function Effects 0.000 description 7
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 description 7
- 239000010410 layer Substances 0.000 description 7
- 238000003860 storage Methods 0.000 description 7
- 229910052719 titanium Inorganic materials 0.000 description 7
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 6
- 229910004286 SiNxOy Inorganic materials 0.000 description 6
- 229910020286 SiOxNy Inorganic materials 0.000 description 6
- 229910045601 alloy Inorganic materials 0.000 description 6
- 239000000956 alloy Substances 0.000 description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 6
- 239000013078 crystal Substances 0.000 description 6
- 239000001257 hydrogen Substances 0.000 description 6
- 229910052739 hydrogen Inorganic materials 0.000 description 6
- 230000010354 integration Effects 0.000 description 6
- 239000001301 oxygen Substances 0.000 description 6
- 229910052760 oxygen Inorganic materials 0.000 description 6
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 6
- 229910052721 tungsten Inorganic materials 0.000 description 6
- 239000010937 tungsten Substances 0.000 description 6
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 5
- 229910052698 phosphorus Inorganic materials 0.000 description 5
- 239000011574 phosphorus Substances 0.000 description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 5
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 5
- -1 x> y> 0) Inorganic materials 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 4
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 238000002425 crystallisation Methods 0.000 description 4
- 230000006866 deterioration Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 229910052750 molybdenum Inorganic materials 0.000 description 4
- 239000011733 molybdenum Substances 0.000 description 4
- 239000011368 organic material Substances 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- 230000009467 reduction Effects 0.000 description 4
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 3
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 3
- CSDREXVUYHZDNP-UHFFFAOYSA-N alumanylidynesilicon Chemical compound [Al].[Si] CSDREXVUYHZDNP-UHFFFAOYSA-N 0.000 description 3
- 229910021417 amorphous silicon Inorganic materials 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000006870 function Effects 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 230000014759 maintenance of location Effects 0.000 description 3
- 150000002736 metal compounds Chemical class 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 125000001424 substituent group Chemical group 0.000 description 3
- 229910052715 tantalum Inorganic materials 0.000 description 3
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 3
- 235000012431 wafers Nutrition 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 230000008025 crystallization Effects 0.000 description 2
- 125000001153 fluoro group Chemical group F* 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910000449 hafnium oxide Inorganic materials 0.000 description 2
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 2
- 229910010272 inorganic material Inorganic materials 0.000 description 2
- 239000011147 inorganic material Substances 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 238000005499 laser crystallization Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000011572 manganese Substances 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 239000010955 niobium Substances 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 239000001272 nitrous oxide Substances 0.000 description 2
- 125000000962 organic group Chemical group 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 229910021332 silicide Inorganic materials 0.000 description 2
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 2
- 239000007790 solid phase Substances 0.000 description 2
- 230000001629 suppression Effects 0.000 description 2
- 229910001936 tantalum oxide Inorganic materials 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 1
- 229910052779 Neodymium Inorganic materials 0.000 description 1
- 229920001665 Poly-4-vinylphenol Polymers 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910002808 Si–O–Si Inorganic materials 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 125000003118 aryl group Chemical group 0.000 description 1
- GPBUGPUPKAGMDK-UHFFFAOYSA-N azanylidynemolybdenum Chemical compound [Mo]#N GPBUGPUPKAGMDK-UHFFFAOYSA-N 0.000 description 1
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- UIZLQMLDSWKZGC-UHFFFAOYSA-N cadmium helium Chemical compound [He].[Cd] UIZLQMLDSWKZGC-UHFFFAOYSA-N 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 230000014509 gene expression Effects 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000002784 hot electron Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 150000003657 tungsten Chemical class 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/401—Multistep manufacturing processes
- H01L29/4011—Multistep manufacturing processes for data storage electrodes
- H01L29/40114—Multistep manufacturing processes for data storage electrodes the electrodes comprising a conductor-insulator-conductor-insulator-semiconductor structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66825—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a floating gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
- H01L29/7881—Programmable transistors with only two possible levels of programmation
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/10—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the top-view layout
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Non-Volatile Memory (AREA)
- Semiconductor Memories (AREA)
- Thin Film Transistor (AREA)
- Read Only Memory (AREA)
Description
本実施の形態に係る不揮発性半導体記憶装置は、行列状に配置された複数のメモリセル(データを記憶する基本単位)、ならびに複数のソース線、ビット線およびワード線を有する。各メモリセルにはそれぞれメモリ素子が設けられている。メモリ素子は、ソース線、ビット線およびワード線にそれぞれ電気的に接続されている。また、本実施の形態では、メモリ素子としてメモリトランジスタが用いられている。
本実施の形態は実施の形態1の変形例である。本実施の形態の記憶装置は、島状半導体領域とフローティングゲート間の絶縁膜の厚さが部分的に異なっているメモリ素子を有している。以下、図9および図10A〜図10Cを参照して、本実施の形態を説明する。
本実施の形態は、実施の形態1とは異なる不揮発性半導体記憶装置であり、また、実施の形態2の変形例でもある。本実施の形態の記憶装置は、島状半導体領域101とフローティングゲート間の絶縁膜の厚さを部分的に異なるメモリ素子を備えている。以下、図13、図14A〜図14Cを参照して、本実施の形態を説明する。なお、実施の形態1、2と同様な構成の説明は重複するので、省略する。
101 島状半導体領域(バックコントロールゲート)
102 島状半導体領域
103、104 第1の不純物領域
105、106 第2の不純物領域
107 チャネル形成領域
108 絶縁膜
109 導電膜(フローティングゲート)
110 絶縁膜
111 導電膜(コントロールゲート、ワード線)
112 絶縁膜
113 導電膜(ソース線)
114 導電膜(ビット線)
115 導電膜
116〜120 開口
121 メモリセル
130 絶縁膜
Claims (7)
- 第1の半導体領域上及び第2の半導体領域上の第1の絶縁膜と、
前記第1の絶縁膜上のフローティングゲートと、
前記フローティングゲート上の第2の絶縁膜と、
前記第2の絶縁膜上のコントロールゲートと、
前記コントロールゲート上の第3の絶縁膜と、
前記第3の絶縁膜上の導電膜と、を有し、
前記第1の半導体領域は、第1の領域と、第2の領域と、前記第1の領域と前記第2の領域との間に位置する第3の領域と、を有し、
前記第2の半導体領域は、第4の領域と、前記第4の領域の周辺に位置する第5の領域と、を有し、
前記フローティングゲートは、前記第3の領域と重なる領域を有し、
前記フローティングゲートは、前記第4の領域と重なる領域を有し、
前記コントロールゲートは、前記第3の領域と重なる領域を有し、
前記コントロールゲートは、前記第4の領域と重なる領域を有し、
前記コントロールゲートは、前記導電膜を介して前記第5の領域と電気的に接続されており、
前記第1乃至第3の絶縁膜は、第1の開口を有し、
前記第3の絶縁膜は、第2の開口を有し、
前記導電膜は、前記第1の開口を介して前記第5の領域と電気的に接続されており、
前記導電膜は、前記第2の開口を介して前記コントロールゲートと電気的に接続されていることを特徴とする電子機器。 - 請求項1において、
前記第5の領域は、領域Aと、領域Bと、前記領域Aと前記領域Bとの間に位置する領域Cと、を有し、
前記第1乃至第3の絶縁膜に第3の開口を有し、
前記第1の開口は、前記領域Aと重なるように配置され、
前記第2の開口は、前記領域Cと重なるように配置され、
前記第3の開口は、前記領域Bと重なるように配置されていることを特徴とする電子機器。 - 請求項1または請求項2において、
前記コントロールゲートは、第1の配線に電気的に接続されており、
前記第2の半導体領域は、前記第1の配線と前記第1の半導体領域との間に位置することを特徴とする電子機器。 - 請求項1乃至3のいずれか一項において、
前記第1の領域は、第2の配線と電気的に接続されており、
前記第2の領域は、第3の配線と電気的に接続されており、
前記第2の半導体領域は、前記第2の配線と前記第3の配線の間に位置することを特徴とする電子機器。 - 請求項1乃至4のいずれか一項において、
前記第1の半導体領域上及び前記第2の半導体領域上、且つ、前記第1の絶縁膜下に第4の絶縁膜を有し、
前記第4の絶縁膜は、第4の開口を有し、
前記第4の開口は、前記第3の領域と重なる領域を有することを特徴とする電子機器。 - 請求項1乃至4のいずれか一項において、
前記第1の半導体領域上及び前記第2の半導体領域上、且つ、前記第1の絶縁膜下に第4の絶縁膜を有し、
前記第4の絶縁膜は、第5の開口を有し、
前記第5の開口は、前記第4の領域と重なる領域を有することを特徴とする電子機器。 - 請求項1乃至4のいずれか一項において、
前記第1の半導体領域上及び前記第2の半導体領域上、且つ、前記第1の絶縁膜下に第4の絶縁膜を有し、
前記第4の絶縁膜は、第4の開口と、第5の開口と、を有し、
前記第4の開口は、前記第3の領域と重なる領域を有し、
前記第5の開口は、前記第4の領域と重なる領域を有することを特徴とする電子機器。
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US8198666B2 (en) * | 2009-02-20 | 2012-06-12 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device including a nonvolatile memory element having first, second and third insulating films |
US9082652B2 (en) | 2010-03-23 | 2015-07-14 | Sharp Kabushiki Kaisha | Semiconductor device, active matrix substrate, and display device |
CN102709290B (zh) * | 2012-05-22 | 2016-08-03 | 上海华虹宏力半导体制造有限公司 | 存储器及其形成方法 |
US9117525B2 (en) | 2012-09-12 | 2015-08-25 | Kabushiki Kaisha Toshiba | Nonvolatile semiconductor memory device and method of manufacturing the same |
KR20140081412A (ko) * | 2012-12-21 | 2014-07-01 | 삼성디스플레이 주식회사 | 박막 트랜지스터 표시판 및 그 제조 방법 |
CN103199116B (zh) | 2013-03-29 | 2016-04-27 | 京东方科技集团股份有限公司 | 悬浮栅晶体管及其制作方法、应用方法、显示器驱动电路 |
JP2016039226A (ja) * | 2014-08-07 | 2016-03-22 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
US10096718B2 (en) | 2016-06-17 | 2018-10-09 | Semiconductor Energy Laboratory Co., Ltd. | Transistor, electronic device, manufacturing method of transistor |
JP2019220530A (ja) * | 2018-06-18 | 2019-12-26 | 株式会社ジャパンディスプレイ | 半導体装置 |
Family Cites Families (30)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3136517C2 (de) * | 1980-09-26 | 1985-02-07 | Tokyo Shibaura Denki K.K., Kawasaki, Kanagawa | Nichtflüchtige Halbleiter-Speichervorrichtung |
JPH01128472A (ja) * | 1987-11-13 | 1989-05-22 | Toshiba Corp | 半導体不揮発性記憶装置 |
JPH088315B2 (ja) * | 1989-03-08 | 1996-01-29 | 富士通株式会社 | 半導体装置の製造方法及び半導体装置 |
JP2563683B2 (ja) * | 1990-03-08 | 1996-12-11 | 松下電子工業株式会社 | 不揮発性半導体記憶装置およびその製造方法 |
JP3507761B2 (ja) * | 1990-07-12 | 2004-03-15 | 株式会社ルネサステクノロジ | 半導体集積回路装置 |
JPH06334195A (ja) * | 1993-05-18 | 1994-12-02 | Nippon Steel Corp | 不揮発性半導体記憶装置 |
JPH07130893A (ja) * | 1993-11-05 | 1995-05-19 | Sony Corp | 半導体装置及びその製造方法 |
TW326553B (en) * | 1996-01-22 | 1998-02-11 | Handotai Energy Kenkyusho Kk | Semiconductor device and method of fabricating same |
US5886376A (en) * | 1996-07-01 | 1999-03-23 | International Business Machines Corporation | EEPROM having coplanar on-insulator FET and control gate |
JP3183326B2 (ja) * | 1996-07-17 | 2001-07-09 | 日本電気株式会社 | 読出専用半導体記憶装置 |
JPH1187664A (ja) * | 1997-04-28 | 1999-03-30 | Nippon Steel Corp | 半導体装置及びその製造方法 |
US7602007B2 (en) * | 1997-04-28 | 2009-10-13 | Yoshihiro Kumazaki | Semiconductor device having controllable transistor threshold voltage |
JP2006013534A (ja) | 1997-07-08 | 2006-01-12 | Sony Corp | 半導体不揮発性記憶装置の製造方法 |
US6005270A (en) * | 1997-11-10 | 1999-12-21 | Sony Corporation | Semiconductor nonvolatile memory device and method of production of same |
TW518650B (en) * | 1999-04-15 | 2003-01-21 | Semiconductor Energy Lab | Electro-optical device and electronic equipment |
JP2001135736A (ja) * | 1999-11-08 | 2001-05-18 | Nec Corp | 不揮発性半導体記憶装置及びその製造方法 |
JP4663094B2 (ja) * | 2000-10-13 | 2011-03-30 | 株式会社半導体エネルギー研究所 | 半導体装置 |
JP4776801B2 (ja) * | 2001-04-24 | 2011-09-21 | 株式会社半導体エネルギー研究所 | メモリ回路 |
TW559814B (en) * | 2001-05-31 | 2003-11-01 | Semiconductor Energy Lab | Nonvolatile memory and method of driving the same |
JP4859292B2 (ja) * | 2001-07-02 | 2012-01-25 | 富士通セミコンダクター株式会社 | 半導体集積回路装置およびnand型不揮発性半導体装置 |
JP4281331B2 (ja) * | 2002-01-21 | 2009-06-17 | 株式会社デンソー | 不揮発性半導体記憶装置 |
JP2004165182A (ja) * | 2002-11-08 | 2004-06-10 | Ricoh Co Ltd | 半導体装置 |
JP2006339554A (ja) * | 2005-06-06 | 2006-12-14 | Sanyo Electric Co Ltd | 不揮発性半導体記憶装置及びその動作方法 |
EP1837900A3 (en) * | 2006-03-21 | 2008-10-15 | Semiconductor Energy Laboratory Co., Ltd. | Nonvolatile semiconductor memory device |
JP5164404B2 (ja) | 2006-03-21 | 2013-03-21 | 株式会社半導体エネルギー研究所 | 不揮発性半導体記憶装置 |
EP1837917A1 (en) * | 2006-03-21 | 2007-09-26 | Semiconductor Energy Laboratory Co., Ltd. | Nonvolatile semiconductor memory device |
US8629490B2 (en) * | 2006-03-31 | 2014-01-14 | Semiconductor Energy Laboratory Co., Ltd. | Nonvolatile semiconductor storage device with floating gate electrode and control gate electrode |
JP5483660B2 (ja) * | 2006-06-01 | 2014-05-07 | 株式会社半導体エネルギー研究所 | 半導体装置 |
US7596024B2 (en) * | 2006-07-14 | 2009-09-29 | Semiconductor Energy Laboratory Co., Ltd. | Nonvolatile memory |
US8188535B2 (en) * | 2008-05-16 | 2012-05-29 | Semiconductor Energy Laboratory Co., Ltd. | Nonvolatile semiconductor memory device and manufacturing method thereof |
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US8193574B2 (en) | 2012-06-05 |
US20090278188A1 (en) | 2009-11-12 |
CN102017129A (zh) | 2011-04-13 |
TWI482269B (zh) | 2015-04-21 |
WO2009136615A1 (en) | 2009-11-12 |
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KR20110010762A (ko) | 2011-02-07 |
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