JP2009295971A5 - - Google Patents
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- Publication number
- JP2009295971A5 JP2009295971A5 JP2009110344A JP2009110344A JP2009295971A5 JP 2009295971 A5 JP2009295971 A5 JP 2009295971A5 JP 2009110344 A JP2009110344 A JP 2009110344A JP 2009110344 A JP2009110344 A JP 2009110344A JP 2009295971 A5 JP2009295971 A5 JP 2009295971A5
- Authority
- JP
- Japan
- Prior art keywords
- region
- opening
- insulating film
- semiconductor
- memory device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims 21
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2009110344A JP5479773B2 (ja) | 2008-05-09 | 2009-04-30 | 電子機器 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008123583 | 2008-05-09 | ||
| JP2008123583 | 2008-05-09 | ||
| JP2009110344A JP5479773B2 (ja) | 2008-05-09 | 2009-04-30 | 電子機器 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2009295971A JP2009295971A (ja) | 2009-12-17 |
| JP2009295971A5 true JP2009295971A5 (https=) | 2012-04-19 |
| JP5479773B2 JP5479773B2 (ja) | 2014-04-23 |
Family
ID=41264670
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2009110344A Expired - Fee Related JP5479773B2 (ja) | 2008-05-09 | 2009-04-30 | 電子機器 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US8193574B2 (https=) |
| JP (1) | JP5479773B2 (https=) |
| KR (1) | KR101508492B1 (https=) |
| CN (1) | CN102017129B (https=) |
| TW (1) | TWI482269B (https=) |
| WO (1) | WO2009136615A1 (https=) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8198666B2 (en) * | 2009-02-20 | 2012-06-12 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device including a nonvolatile memory element having first, second and third insulating films |
| WO2011118076A1 (ja) * | 2010-03-23 | 2011-09-29 | シャープ株式会社 | 半導体装置、アクティブマトリクス基板、及び表示装置 |
| CN102709290B (zh) * | 2012-05-22 | 2016-08-03 | 上海华虹宏力半导体制造有限公司 | 存储器及其形成方法 |
| US9117525B2 (en) | 2012-09-12 | 2015-08-25 | Kabushiki Kaisha Toshiba | Nonvolatile semiconductor memory device and method of manufacturing the same |
| KR20140081412A (ko) * | 2012-12-21 | 2014-07-01 | 삼성디스플레이 주식회사 | 박막 트랜지스터 표시판 및 그 제조 방법 |
| CN103199116B (zh) | 2013-03-29 | 2016-04-27 | 京东方科技集团股份有限公司 | 悬浮栅晶体管及其制作方法、应用方法、显示器驱动电路 |
| JP2016039226A (ja) * | 2014-08-07 | 2016-03-22 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
| US10096718B2 (en) | 2016-06-17 | 2018-10-09 | Semiconductor Energy Laboratory Co., Ltd. | Transistor, electronic device, manufacturing method of transistor |
| JP2019220530A (ja) * | 2018-06-18 | 2019-12-26 | 株式会社ジャパンディスプレイ | 半導体装置 |
| TWI897022B (zh) * | 2023-09-01 | 2025-09-11 | 新唐科技股份有限公司 | 半導體結構及其形成方法 |
| CN119947103A (zh) | 2023-11-02 | 2025-05-06 | 株式会社半导体能源研究所 | 半导体装置 |
Family Cites Families (30)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3136517C2 (de) * | 1980-09-26 | 1985-02-07 | Tokyo Shibaura Denki K.K., Kawasaki, Kanagawa | Nichtflüchtige Halbleiter-Speichervorrichtung |
| JPH01128472A (ja) * | 1987-11-13 | 1989-05-22 | Toshiba Corp | 半導体不揮発性記憶装置 |
| JPH088315B2 (ja) * | 1989-03-08 | 1996-01-29 | 富士通株式会社 | 半導体装置の製造方法及び半導体装置 |
| JP2563683B2 (ja) * | 1990-03-08 | 1996-12-11 | 松下電子工業株式会社 | 不揮発性半導体記憶装置およびその製造方法 |
| JP3507761B2 (ja) * | 1990-07-12 | 2004-03-15 | 株式会社ルネサステクノロジ | 半導体集積回路装置 |
| JPH06334195A (ja) * | 1993-05-18 | 1994-12-02 | Nippon Steel Corp | 不揮発性半導体記憶装置 |
| JPH07130893A (ja) * | 1993-11-05 | 1995-05-19 | Sony Corp | 半導体装置及びその製造方法 |
| TW326553B (en) | 1996-01-22 | 1998-02-11 | Handotai Energy Kenkyusho Kk | Semiconductor device and method of fabricating same |
| US5886376A (en) * | 1996-07-01 | 1999-03-23 | International Business Machines Corporation | EEPROM having coplanar on-insulator FET and control gate |
| JP3183326B2 (ja) * | 1996-07-17 | 2001-07-09 | 日本電気株式会社 | 読出専用半導体記憶装置 |
| US7602007B2 (en) | 1997-04-28 | 2009-10-13 | Yoshihiro Kumazaki | Semiconductor device having controllable transistor threshold voltage |
| JPH1187664A (ja) | 1997-04-28 | 1999-03-30 | Nippon Steel Corp | 半導体装置及びその製造方法 |
| JP2006013534A (ja) | 1997-07-08 | 2006-01-12 | Sony Corp | 半導体不揮発性記憶装置の製造方法 |
| US6005270A (en) | 1997-11-10 | 1999-12-21 | Sony Corporation | Semiconductor nonvolatile memory device and method of production of same |
| TW518637B (en) | 1999-04-15 | 2003-01-21 | Semiconductor Energy Lab | Electro-optical device and electronic equipment |
| JP2001135736A (ja) * | 1999-11-08 | 2001-05-18 | Nec Corp | 不揮発性半導体記憶装置及びその製造方法 |
| JP4663094B2 (ja) | 2000-10-13 | 2011-03-30 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| JP4776801B2 (ja) | 2001-04-24 | 2011-09-21 | 株式会社半導体エネルギー研究所 | メモリ回路 |
| TW559814B (en) | 2001-05-31 | 2003-11-01 | Semiconductor Energy Lab | Nonvolatile memory and method of driving the same |
| JP4859292B2 (ja) * | 2001-07-02 | 2012-01-25 | 富士通セミコンダクター株式会社 | 半導体集積回路装置およびｎａｎｄ型不揮発性半導体装置 |
| JP4281331B2 (ja) * | 2002-01-21 | 2009-06-17 | 株式会社デンソー | 不揮発性半導体記憶装置 |
| JP2004165182A (ja) * | 2002-11-08 | 2004-06-10 | Ricoh Co Ltd | 半導体装置 |
| JP2006339554A (ja) * | 2005-06-06 | 2006-12-14 | Sanyo Electric Co Ltd | 不揮発性半導体記憶装置及びその動作方法 |
| EP1837917A1 (en) | 2006-03-21 | 2007-09-26 | Semiconductor Energy Laboratory Co., Ltd. | Nonvolatile semiconductor memory device |
| EP1837900A3 (en) | 2006-03-21 | 2008-10-15 | Semiconductor Energy Laboratory Co., Ltd. | Nonvolatile semiconductor memory device |
| JP5164404B2 (ja) | 2006-03-21 | 2013-03-21 | 株式会社半導体エネルギー研究所 | 不揮発性半導体記憶装置 |
| US8629490B2 (en) * | 2006-03-31 | 2014-01-14 | Semiconductor Energy Laboratory Co., Ltd. | Nonvolatile semiconductor storage device with floating gate electrode and control gate electrode |
| JP5483660B2 (ja) * | 2006-06-01 | 2014-05-07 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| US7596024B2 (en) * | 2006-07-14 | 2009-09-29 | Semiconductor Energy Laboratory Co., Ltd. | Nonvolatile memory |
| US8188535B2 (en) | 2008-05-16 | 2012-05-29 | Semiconductor Energy Laboratory Co., Ltd. | Nonvolatile semiconductor memory device and manufacturing method thereof |
-
2009
- 2009-04-24 CN CN200980117627.2A patent/CN102017129B/zh not_active Expired - Fee Related
- 2009-04-24 KR KR1020107027516A patent/KR101508492B1/ko not_active Expired - Fee Related
- 2009-04-24 WO PCT/JP2009/058594 patent/WO2009136615A1/en not_active Ceased
- 2009-04-30 JP JP2009110344A patent/JP5479773B2/ja not_active Expired - Fee Related
- 2009-05-01 US US12/434,390 patent/US8193574B2/en not_active Expired - Fee Related
- 2009-05-05 TW TW098114870A patent/TWI482269B/zh not_active IP Right Cessation