CN102017129B - 非易失性半导体存储装置 - Google Patents

非易失性半导体存储装置 Download PDF

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Publication number
CN102017129B
CN102017129B CN200980117627.2A CN200980117627A CN102017129B CN 102017129 B CN102017129 B CN 102017129B CN 200980117627 A CN200980117627 A CN 200980117627A CN 102017129 B CN102017129 B CN 102017129B
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CN
China
Prior art keywords
film
island
insulating film
memory cell
island semiconductor
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Expired - Fee Related
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CN200980117627.2A
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English (en)
Chinese (zh)
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CN102017129A (zh
Inventor
浅见良信
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Publication of CN102017129A publication Critical patent/CN102017129A/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/10—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the top-view layout
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0411—Manufacture or treatment of FETs having insulated gates [IGFET] of FETs having floating gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H10D30/681—Floating-gate IGFETs having only two programming levels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates

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  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
  • Read Only Memory (AREA)
  • Thin Film Transistor (AREA)
CN200980117627.2A 2008-05-09 2009-04-24 非易失性半导体存储装置 Expired - Fee Related CN102017129B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2008123583 2008-05-09
JP2008-123583 2008-05-09
PCT/JP2009/058594 WO2009136615A1 (en) 2008-05-09 2009-04-24 Non-volatile semiconductor memory device

Publications (2)

Publication Number Publication Date
CN102017129A CN102017129A (zh) 2011-04-13
CN102017129B true CN102017129B (zh) 2013-10-23

Family

ID=41264670

Family Applications (1)

Application Number Title Priority Date Filing Date
CN200980117627.2A Expired - Fee Related CN102017129B (zh) 2008-05-09 2009-04-24 非易失性半导体存储装置

Country Status (6)

Country Link
US (1) US8193574B2 (https=)
JP (1) JP5479773B2 (https=)
KR (1) KR101508492B1 (https=)
CN (1) CN102017129B (https=)
TW (1) TWI482269B (https=)
WO (1) WO2009136615A1 (https=)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8198666B2 (en) * 2009-02-20 2012-06-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including a nonvolatile memory element having first, second and third insulating films
WO2011118076A1 (ja) * 2010-03-23 2011-09-29 シャープ株式会社 半導体装置、アクティブマトリクス基板、及び表示装置
CN102709290B (zh) * 2012-05-22 2016-08-03 上海华虹宏力半导体制造有限公司 存储器及其形成方法
US9117525B2 (en) 2012-09-12 2015-08-25 Kabushiki Kaisha Toshiba Nonvolatile semiconductor memory device and method of manufacturing the same
KR20140081412A (ko) * 2012-12-21 2014-07-01 삼성디스플레이 주식회사 박막 트랜지스터 표시판 및 그 제조 방법
CN103199116B (zh) 2013-03-29 2016-04-27 京东方科技集团股份有限公司 悬浮栅晶体管及其制作方法、应用方法、显示器驱动电路
JP2016039226A (ja) * 2014-08-07 2016-03-22 ルネサスエレクトロニクス株式会社 半導体装置
US10096718B2 (en) 2016-06-17 2018-10-09 Semiconductor Energy Laboratory Co., Ltd. Transistor, electronic device, manufacturing method of transistor
JP2019220530A (ja) * 2018-06-18 2019-12-26 株式会社ジャパンディスプレイ 半導体装置
TWI897022B (zh) * 2023-09-01 2025-09-11 新唐科技股份有限公司 半導體結構及其形成方法
CN119947103A (zh) 2023-11-02 2025-05-06 株式会社半导体能源研究所 半导体装置

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050258473A1 (en) * 2002-11-08 2005-11-24 Masaaki Yoshida Semiconductor device of non- volatile memory
CN101047190A (zh) * 2006-03-31 2007-10-03 株式会社半导体能源研究所 非易失性半导体存储器件及其制造方法
CN101105975A (zh) * 2006-07-14 2008-01-16 株式会社半导体能源研究所 非易失性存储器

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JPH01128472A (ja) * 1987-11-13 1989-05-22 Toshiba Corp 半導体不揮発性記憶装置
JPH088315B2 (ja) * 1989-03-08 1996-01-29 富士通株式会社 半導体装置の製造方法及び半導体装置
JP2563683B2 (ja) * 1990-03-08 1996-12-11 松下電子工業株式会社 不揮発性半導体記憶装置およびその製造方法
JP3507761B2 (ja) * 1990-07-12 2004-03-15 株式会社ルネサステクノロジ 半導体集積回路装置
JPH06334195A (ja) * 1993-05-18 1994-12-02 Nippon Steel Corp 不揮発性半導体記憶装置
JPH07130893A (ja) * 1993-11-05 1995-05-19 Sony Corp 半導体装置及びその製造方法
TW326553B (en) 1996-01-22 1998-02-11 Handotai Energy Kenkyusho Kk Semiconductor device and method of fabricating same
US5886376A (en) * 1996-07-01 1999-03-23 International Business Machines Corporation EEPROM having coplanar on-insulator FET and control gate
JP3183326B2 (ja) * 1996-07-17 2001-07-09 日本電気株式会社 読出専用半導体記憶装置
US7602007B2 (en) 1997-04-28 2009-10-13 Yoshihiro Kumazaki Semiconductor device having controllable transistor threshold voltage
JPH1187664A (ja) 1997-04-28 1999-03-30 Nippon Steel Corp 半導体装置及びその製造方法
JP2006013534A (ja) 1997-07-08 2006-01-12 Sony Corp 半導体不揮発性記憶装置の製造方法
US6005270A (en) 1997-11-10 1999-12-21 Sony Corporation Semiconductor nonvolatile memory device and method of production of same
TW518637B (en) 1999-04-15 2003-01-21 Semiconductor Energy Lab Electro-optical device and electronic equipment
JP2001135736A (ja) * 1999-11-08 2001-05-18 Nec Corp 不揮発性半導体記憶装置及びその製造方法
JP4663094B2 (ja) 2000-10-13 2011-03-30 株式会社半導体エネルギー研究所 半導体装置
JP4776801B2 (ja) 2001-04-24 2011-09-21 株式会社半導体エネルギー研究所 メモリ回路
TW559814B (en) 2001-05-31 2003-11-01 Semiconductor Energy Lab Nonvolatile memory and method of driving the same
JP4859292B2 (ja) * 2001-07-02 2012-01-25 富士通セミコンダクター株式会社 半導体集積回路装置およびｎａｎｄ型不揮発性半導体装置
JP4281331B2 (ja) * 2002-01-21 2009-06-17 株式会社デンソー 不揮発性半導体記憶装置
JP2006339554A (ja) * 2005-06-06 2006-12-14 Sanyo Electric Co Ltd 不揮発性半導体記憶装置及びその動作方法
EP1837917A1 (en) 2006-03-21 2007-09-26 Semiconductor Energy Laboratory Co., Ltd. Nonvolatile semiconductor memory device
EP1837900A3 (en) 2006-03-21 2008-10-15 Semiconductor Energy Laboratory Co., Ltd. Nonvolatile semiconductor memory device
JP5164404B2 (ja) 2006-03-21 2013-03-21 株式会社半導体エネルギー研究所 不揮発性半導体記憶装置
JP5483660B2 (ja) * 2006-06-01 2014-05-07 株式会社半導体エネルギー研究所 半導体装置
US8188535B2 (en) 2008-05-16 2012-05-29 Semiconductor Energy Laboratory Co., Ltd. Nonvolatile semiconductor memory device and manufacturing method thereof

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050258473A1 (en) * 2002-11-08 2005-11-24 Masaaki Yoshida Semiconductor device of non- volatile memory
CN101047190A (zh) * 2006-03-31 2007-10-03 株式会社半导体能源研究所 非易失性半导体存储器件及其制造方法
CN101105975A (zh) * 2006-07-14 2008-01-16 株式会社半导体能源研究所 非易失性存储器

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
JP平1-128472A 1989.05.22

Also Published As

Publication number Publication date
US20090278188A1 (en) 2009-11-12
KR20110010762A (ko) 2011-02-07
TWI482269B (zh) 2015-04-21
JP5479773B2 (ja) 2014-04-23
CN102017129A (zh) 2011-04-13
KR101508492B1 (ko) 2015-05-18
JP2009295971A (ja) 2009-12-17
WO2009136615A1 (en) 2009-11-12
US8193574B2 (en) 2012-06-05
TW200952160A (en) 2009-12-16

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