KR101508492B1 - 비휘발성 반도체 기억 장치 - Google Patents

비휘발성 반도체 기억 장치 Download PDF

Info

Publication number
KR101508492B1
KR101508492B1 KR1020107027516A KR20107027516A KR101508492B1 KR 101508492 B1 KR101508492 B1 KR 101508492B1 KR 1020107027516 A KR1020107027516 A KR 1020107027516A KR 20107027516 A KR20107027516 A KR 20107027516A KR 101508492 B1 KR101508492 B1 KR 101508492B1
Authority
KR
South Korea
Prior art keywords
island
film
semiconductor region
insulating film
floating gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1020107027516A
Other languages
English (en)
Korean (ko)
Other versions
KR20110010762A (ko
Inventor
요시노부 아사미
Original Assignee
가부시키가이샤 한도오따이 에네루기 켄큐쇼
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 가부시키가이샤 한도오따이 에네루기 켄큐쇼 filed Critical 가부시키가이샤 한도오따이 에네루기 켄큐쇼
Publication of KR20110010762A publication Critical patent/KR20110010762A/ko
Application granted granted Critical
Publication of KR101508492B1 publication Critical patent/KR101508492B1/ko
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/10—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the top-view layout
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0411—Manufacture or treatment of FETs having insulated gates [IGFET] of FETs having floating gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H10D30/681—Floating-gate IGFETs having only two programming levels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates

Landscapes

  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
  • Read Only Memory (AREA)
  • Thin Film Transistor (AREA)
KR1020107027516A 2008-05-09 2009-04-24 비휘발성 반도체 기억 장치 Expired - Fee Related KR101508492B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2008123583 2008-05-09
JPJP-P-2008-123583 2008-05-09
PCT/JP2009/058594 WO2009136615A1 (en) 2008-05-09 2009-04-24 Non-volatile semiconductor memory device

Publications (2)

Publication Number Publication Date
KR20110010762A KR20110010762A (ko) 2011-02-07
KR101508492B1 true KR101508492B1 (ko) 2015-05-18

Family

ID=41264670

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020107027516A Expired - Fee Related KR101508492B1 (ko) 2008-05-09 2009-04-24 비휘발성 반도체 기억 장치

Country Status (6)

Country Link
US (1) US8193574B2 (https=)
JP (1) JP5479773B2 (https=)
KR (1) KR101508492B1 (https=)
CN (1) CN102017129B (https=)
TW (1) TWI482269B (https=)
WO (1) WO2009136615A1 (https=)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8198666B2 (en) * 2009-02-20 2012-06-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including a nonvolatile memory element having first, second and third insulating films
WO2011118076A1 (ja) * 2010-03-23 2011-09-29 シャープ株式会社 半導体装置、アクティブマトリクス基板、及び表示装置
CN102709290B (zh) * 2012-05-22 2016-08-03 上海华虹宏力半导体制造有限公司 存储器及其形成方法
US9117525B2 (en) 2012-09-12 2015-08-25 Kabushiki Kaisha Toshiba Nonvolatile semiconductor memory device and method of manufacturing the same
KR20140081412A (ko) * 2012-12-21 2014-07-01 삼성디스플레이 주식회사 박막 트랜지스터 표시판 및 그 제조 방법
CN103199116B (zh) 2013-03-29 2016-04-27 京东方科技集团股份有限公司 悬浮栅晶体管及其制作方法、应用方法、显示器驱动电路
JP2016039226A (ja) * 2014-08-07 2016-03-22 ルネサスエレクトロニクス株式会社 半導体装置
US10096718B2 (en) 2016-06-17 2018-10-09 Semiconductor Energy Laboratory Co., Ltd. Transistor, electronic device, manufacturing method of transistor
JP2019220530A (ja) * 2018-06-18 2019-12-26 株式会社ジャパンディスプレイ 半導体装置
TWI897022B (zh) * 2023-09-01 2025-09-11 新唐科技股份有限公司 半導體結構及其形成方法
CN119947103A (zh) 2023-11-02 2025-05-06 株式会社半导体能源研究所 半导体装置

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4453234A (en) * 1980-09-26 1984-06-05 Tokyo Shibaura Denki Kabushiki Kaisha Nonvolatile semiconductor memory device
JPH07130893A (ja) * 1993-11-05 1995-05-19 Sony Corp 半導体装置及びその製造方法
JPH1032268A (ja) * 1996-07-17 1998-02-03 Nec Corp 読出専用半導体記憶装置
US20050258473A1 (en) * 2002-11-08 2005-11-24 Masaaki Yoshida Semiconductor device of non- volatile memory

Family Cites Families (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01128472A (ja) * 1987-11-13 1989-05-22 Toshiba Corp 半導体不揮発性記憶装置
JPH088315B2 (ja) * 1989-03-08 1996-01-29 富士通株式会社 半導体装置の製造方法及び半導体装置
JP2563683B2 (ja) * 1990-03-08 1996-12-11 松下電子工業株式会社 不揮発性半導体記憶装置およびその製造方法
JP3507761B2 (ja) * 1990-07-12 2004-03-15 株式会社ルネサステクノロジ 半導体集積回路装置
JPH06334195A (ja) * 1993-05-18 1994-12-02 Nippon Steel Corp 不揮発性半導体記憶装置
TW326553B (en) 1996-01-22 1998-02-11 Handotai Energy Kenkyusho Kk Semiconductor device and method of fabricating same
US5886376A (en) * 1996-07-01 1999-03-23 International Business Machines Corporation EEPROM having coplanar on-insulator FET and control gate
US7602007B2 (en) 1997-04-28 2009-10-13 Yoshihiro Kumazaki Semiconductor device having controllable transistor threshold voltage
JPH1187664A (ja) 1997-04-28 1999-03-30 Nippon Steel Corp 半導体装置及びその製造方法
JP2006013534A (ja) 1997-07-08 2006-01-12 Sony Corp 半導体不揮発性記憶装置の製造方法
US6005270A (en) 1997-11-10 1999-12-21 Sony Corporation Semiconductor nonvolatile memory device and method of production of same
TW518637B (en) 1999-04-15 2003-01-21 Semiconductor Energy Lab Electro-optical device and electronic equipment
JP2001135736A (ja) * 1999-11-08 2001-05-18 Nec Corp 不揮発性半導体記憶装置及びその製造方法
JP4663094B2 (ja) 2000-10-13 2011-03-30 株式会社半導体エネルギー研究所 半導体装置
JP4776801B2 (ja) 2001-04-24 2011-09-21 株式会社半導体エネルギー研究所 メモリ回路
TW559814B (en) 2001-05-31 2003-11-01 Semiconductor Energy Lab Nonvolatile memory and method of driving the same
JP4859292B2 (ja) * 2001-07-02 2012-01-25 富士通セミコンダクター株式会社 半導体集積回路装置およびｎａｎｄ型不揮発性半導体装置
JP4281331B2 (ja) * 2002-01-21 2009-06-17 株式会社デンソー 不揮発性半導体記憶装置
JP2006339554A (ja) * 2005-06-06 2006-12-14 Sanyo Electric Co Ltd 不揮発性半導体記憶装置及びその動作方法
EP1837917A1 (en) 2006-03-21 2007-09-26 Semiconductor Energy Laboratory Co., Ltd. Nonvolatile semiconductor memory device
EP1837900A3 (en) 2006-03-21 2008-10-15 Semiconductor Energy Laboratory Co., Ltd. Nonvolatile semiconductor memory device
JP5164404B2 (ja) 2006-03-21 2013-03-21 株式会社半導体エネルギー研究所 不揮発性半導体記憶装置
US8629490B2 (en) * 2006-03-31 2014-01-14 Semiconductor Energy Laboratory Co., Ltd. Nonvolatile semiconductor storage device with floating gate electrode and control gate electrode
JP5483660B2 (ja) * 2006-06-01 2014-05-07 株式会社半導体エネルギー研究所 半導体装置
US7596024B2 (en) * 2006-07-14 2009-09-29 Semiconductor Energy Laboratory Co., Ltd. Nonvolatile memory
US8188535B2 (en) 2008-05-16 2012-05-29 Semiconductor Energy Laboratory Co., Ltd. Nonvolatile semiconductor memory device and manufacturing method thereof

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4453234A (en) * 1980-09-26 1984-06-05 Tokyo Shibaura Denki Kabushiki Kaisha Nonvolatile semiconductor memory device
JPH07130893A (ja) * 1993-11-05 1995-05-19 Sony Corp 半導体装置及びその製造方法
JPH1032268A (ja) * 1996-07-17 1998-02-03 Nec Corp 読出専用半導体記憶装置
US20050258473A1 (en) * 2002-11-08 2005-11-24 Masaaki Yoshida Semiconductor device of non- volatile memory

Also Published As

Publication number Publication date
US20090278188A1 (en) 2009-11-12
KR20110010762A (ko) 2011-02-07
TWI482269B (zh) 2015-04-21
JP5479773B2 (ja) 2014-04-23
CN102017129B (zh) 2013-10-23
CN102017129A (zh) 2011-04-13
JP2009295971A (ja) 2009-12-17
WO2009136615A1 (en) 2009-11-12
US8193574B2 (en) 2012-06-05
TW200952160A (en) 2009-12-16

Similar Documents

Publication Publication Date Title
KR101508492B1 (ko) 비휘발성 반도체 기억 장치
CN101047190B (zh) 非易失性半导体存储器件及其制造方法
US8729620B2 (en) Nonvolatile semiconductor memory device
US9231070B2 (en) Nonvolatile semiconductor memory device and manufacturing method thereof, semiconductor device and manufacturing method thereof, and manufacturing method of insulating film
US8325526B2 (en) Semiconductor device
US8310000B2 (en) Nonvolatile semiconductor memory device and manufacturing method thereof
CN101047191B (zh) 非易失性半导体存储装置
US8227863B2 (en) Nonvolatile semiconductor memory device
TW200814240A (en) Nonvolatile semiconductor memory device
US8872251B2 (en) Nonvolatile semiconductor memory device and manufacturing method thereof
JP5238178B2 (ja) 半導体装置
US8895388B2 (en) Method of manufacturing a semiconductor device and a non-volatile semiconductor storage device including the formation of an insulating layer using a plasma treatment
JP5164404B2 (ja) 不揮発性半導体記憶装置
JP5132171B2 (ja) 不揮発性半導体記憶装置及びその作製方法並びに半導体装置及びその作製方法
JP5483659B2 (ja) 半導体装置
JP5164405B2 (ja) 不揮発性半導体記憶装置

Legal Events

Date Code Title Description
PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

A201 Request for examination
E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U12-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

FPAY Annual fee payment

Payment date: 20190227

Year of fee payment: 5

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

FPAY Annual fee payment

Payment date: 20200227

Year of fee payment: 6

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 6

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 7

PC1903 Unpaid annual fee

St.27 status event code: A-4-4-U10-U13-oth-PC1903

Not in force date: 20220331

Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

PC1903 Unpaid annual fee

St.27 status event code: N-4-6-H10-H13-oth-PC1903

Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

Not in force date: 20220331

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000