JP5461788B2 - 半導体装置及びその作製方法 - Google Patents

半導体装置及びその作製方法 Download PDF

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Publication number
JP5461788B2
JP5461788B2 JP2008149221A JP2008149221A JP5461788B2 JP 5461788 B2 JP5461788 B2 JP 5461788B2 JP 2008149221 A JP2008149221 A JP 2008149221A JP 2008149221 A JP2008149221 A JP 2008149221A JP 5461788 B2 JP5461788 B2 JP 5461788B2
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Japan
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layer
semiconductor layer
forming
insulating layer
semiconductor
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Expired - Fee Related
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JP2008149221A
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Japanese (ja)
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JP2009021568A5 (https=
JP2009021568A (ja
Inventor
英人 大沼
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2008149221A priority Critical patent/JP5461788B2/ja
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Publication of JP2009021568A5 publication Critical patent/JP2009021568A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
    • H10D30/0323—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon comprising monocrystalline silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6743—Silicon
    • H10D30/6744—Monocrystalline silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0214—Manufacture or treatment of multiple TFTs using temporary substrates

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  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
JP2008149221A 2007-06-15 2008-06-06 半導体装置及びその作製方法 Expired - Fee Related JP5461788B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2008149221A JP5461788B2 (ja) 2007-06-15 2008-06-06 半導体装置及びその作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2007158746 2007-06-15
JP2007158746 2007-06-15
JP2008149221A JP5461788B2 (ja) 2007-06-15 2008-06-06 半導体装置及びその作製方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2014005841A Division JP5726341B2 (ja) 2007-06-15 2014-01-16 半導体装置の作製方法

Publications (3)

Publication Number Publication Date
JP2009021568A JP2009021568A (ja) 2009-01-29
JP2009021568A5 JP2009021568A5 (https=) 2011-07-21
JP5461788B2 true JP5461788B2 (ja) 2014-04-02

Family

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Family Applications (2)

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JP2008149221A Expired - Fee Related JP5461788B2 (ja) 2007-06-15 2008-06-06 半導体装置及びその作製方法
JP2014005841A Expired - Fee Related JP5726341B2 (ja) 2007-06-15 2014-01-16 半導体装置の作製方法

Family Applications After (1)

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JP2014005841A Expired - Fee Related JP5726341B2 (ja) 2007-06-15 2014-01-16 半導体装置の作製方法

Country Status (3)

Country Link
US (3) US7772054B2 (https=)
JP (2) JP5461788B2 (https=)
KR (1) KR101476624B1 (https=)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7749850B2 (en) * 2007-11-07 2010-07-06 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US20090193676A1 (en) * 2008-01-31 2009-08-06 Guo Shengguang Shoe Drying Apparatus
JP2009260315A (ja) * 2008-03-26 2009-11-05 Semiconductor Energy Lab Co Ltd Ｓｏｉ基板の作製方法及び半導体装置の作製方法
EP2105957A3 (en) * 2008-03-26 2011-01-19 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing soi substrate and method for manufacturing semiconductor device
JP5654206B2 (ja) * 2008-03-26 2015-01-14 株式会社半導体エネルギー研究所 Ｓｏｉ基板の作製方法及び該ｓｏｉ基板を用いた半導体装置
JP2009260313A (ja) * 2008-03-26 2009-11-05 Semiconductor Energy Lab Co Ltd Ｓｏｉ基板の作製方法及び半導体装置の作製方法
JP5503895B2 (ja) * 2008-04-25 2014-05-28 株式会社半導体エネルギー研究所 半導体装置
JP5773379B2 (ja) * 2009-03-19 2015-09-02 ソニー株式会社 半導体装置とその製造方法、及び電子機器
JP5985136B2 (ja) 2009-03-19 2016-09-06 ソニー株式会社 半導体装置とその製造方法、及び電子機器
US8637864B2 (en) * 2011-10-13 2014-01-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the same
TWI600168B (zh) * 2016-11-02 2017-09-21 律勝科技股份有限公司 薄膜電晶體的積層體結構
CN107015546A (zh) * 2017-06-07 2017-08-04 天津仁义塑料制品股份有限公司 一种电磁加热餐盒生产加工流水线

Family Cites Families (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6148975A (ja) 1984-08-16 1986-03-10 Seiko Epson Corp 薄膜トランジスタ
JPH02137373A (ja) * 1988-11-18 1990-05-25 Nec Corp 半導体装置の製造方法
US5079180A (en) * 1988-12-22 1992-01-07 Texas Instruments Incorporated Method of fabricating a raised source/drain transistor
US5200351A (en) * 1989-10-23 1993-04-06 Advanced Micro Devices, Inc. Method of fabricating field effect transistors having lightly doped drain regions
JPH0563190A (ja) * 1991-06-24 1993-03-12 Nippon Telegr & Teleph Corp <Ntt> Ｍｉｓ型電界効果トランジスタ及びその製法
JPH05110099A (ja) 1991-10-18 1993-04-30 Casio Comput Co Ltd 薄膜トランジスタの製造方法
US5250454A (en) * 1992-12-10 1993-10-05 Allied Signal Inc. Method for forming thickened source/drain contact regions for field effect transistors
JPH06291145A (ja) * 1993-04-05 1994-10-18 Toshiba Corp 多結晶シリコン薄膜トランジスタの製造方法
JPH07307307A (ja) * 1994-05-16 1995-11-21 Citizen Watch Co Ltd 半導体装置の製造方法
JPH0864553A (ja) * 1994-08-23 1996-03-08 Nippon Steel Corp 半導体装置の製造方法
JP2006135340A (ja) * 1994-09-13 2006-05-25 Toshiba Corp 半導体装置
JP3761918B2 (ja) 1994-09-13 2006-03-29 株式会社東芝 半導体装置の製造方法
JP3474286B2 (ja) * 1994-10-26 2003-12-08 株式会社半導体エネルギー研究所 薄膜トランジスタの作製方法
JPH08241999A (ja) * 1995-03-02 1996-09-17 Hitachi Ltd 半導体装置とその製造方法
JP4663047B2 (ja) * 1998-07-13 2011-03-30 株式会社半導体エネルギー研究所 レーザー照射装置及び半導体装置の作製方法
JP4476390B2 (ja) 1998-09-04 2010-06-09 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP2001111058A (ja) * 1999-10-12 2001-04-20 Matsushita Electric Ind Co Ltd 薄膜トランジスタおよびその製造方法
JP2006114923A (ja) * 2000-01-07 2006-04-27 Sharp Corp 半導体装置、その製造方法、および情報処理装置
EP1246258B1 (en) 2000-01-07 2011-02-23 Sharp Kabushiki Kaisha Semiconductor device and information processing device
US6743666B1 (en) * 2001-04-27 2004-06-01 Advanced Micro Devices, Inc. Selective thickening of the source-drain and gate areas of field effect transistors
US6429084B1 (en) 2001-06-20 2002-08-06 International Business Machines Corporation MOS transistors with raised sources and drains
JP2003110109A (ja) 2001-09-28 2003-04-11 Sharp Corp 半導体装置及びその製造方法並びに携帯電子機器
US7238557B2 (en) 2001-11-14 2007-07-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of fabricating the same
JP4193097B2 (ja) * 2002-02-18 2008-12-10 日本電気株式会社 半導体装置およびその製造方法
AU2003247513A1 (en) 2002-06-10 2003-12-22 Amberwave Systems Corporation Growing source and drain elements by selecive epitaxy
EP1396883A3 (en) * 2002-09-04 2005-11-30 Canon Kabushiki Kaisha Substrate and manufacturing method therefor
JP4342826B2 (ja) 2003-04-23 2009-10-14 株式会社半導体エネルギー研究所 半導体素子の作製方法
US7115488B2 (en) 2003-08-29 2006-10-03 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing semiconductor device
DE10360000B4 (de) 2003-12-19 2009-12-10 Advanced Micro Devices, Inc., Sunnyvale Abstandselement für eine Gateelektrode mit Zugspannung eines Transistorelements und ein Verfahren zur Herstellung
TWI279852B (en) * 2004-03-16 2007-04-21 Imec Inter Uni Micro Electr Method of manufacturing a semiconductor on a silicon on insulator (SOI) substrate using solid epitaxial regrowth (SPER) and semiconductor device made thereby
TWI408734B (zh) 2005-04-28 2013-09-11 半導體能源研究所股份有限公司 半導體裝置及其製造方法
JP5337380B2 (ja) 2007-01-26 2013-11-06 株式会社半導体エネルギー研究所 半導体装置及びその作製方法
JP5486781B2 (ja) 2007-07-19 2014-05-07 株式会社半導体エネルギー研究所 半導体装置の作製方法
KR101448903B1 (ko) 2007-10-23 2014-10-13 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치 및 그의 제작방법
JP5503895B2 (ja) 2008-04-25 2014-05-28 株式会社半導体エネルギー研究所 半導体装置

Also Published As

Publication number Publication date
US7772054B2 (en) 2010-08-10
JP2014099640A (ja) 2014-05-29
US20080311709A1 (en) 2008-12-18
US20120034744A1 (en) 2012-02-09
JP5726341B2 (ja) 2015-05-27
KR101476624B1 (ko) 2014-12-26
KR20080110519A (ko) 2008-12-18
JP2009021568A (ja) 2009-01-29
US8048729B2 (en) 2011-11-01
US8969147B2 (en) 2015-03-03
US20100279477A1 (en) 2010-11-04

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