JP5442424B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP5442424B2
JP5442424B2 JP2009294434A JP2009294434A JP5442424B2 JP 5442424 B2 JP5442424 B2 JP 5442424B2 JP 2009294434 A JP2009294434 A JP 2009294434A JP 2009294434 A JP2009294434 A JP 2009294434A JP 5442424 B2 JP5442424 B2 JP 5442424B2
Authority
JP
Japan
Prior art keywords
cavity
wiring
pad
chip
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2009294434A
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English (en)
Japanese (ja)
Other versions
JP2011134956A (ja
JP2011134956A5 (https=
Inventor
愛枝 小林
朋治 藤井
之治 竹内
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shinko Electric Industries Co Ltd
Original Assignee
Shinko Electric Industries Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shinko Electric Industries Co Ltd filed Critical Shinko Electric Industries Co Ltd
Priority to JP2009294434A priority Critical patent/JP5442424B2/ja
Priority to US12/972,894 priority patent/US8373997B2/en
Publication of JP2011134956A publication Critical patent/JP2011134956A/ja
Priority to US13/676,569 priority patent/US8729680B2/en
Publication of JP2011134956A5 publication Critical patent/JP2011134956A5/ja
Application granted granted Critical
Publication of JP5442424B2 publication Critical patent/JP5442424B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/20—Arrangements for cooling
    • H10W40/22—Arrangements for cooling characterised by their shape, e.g. having conical or cylindrical projections
    • H10W40/226—Arrangements for cooling characterised by their shape, e.g. having conical or cylindrical projections characterised by projecting parts, e.g. fins to increase surface area
    • H10W40/228—Arrangements for cooling characterised by their shape, e.g. having conical or cylindrical projections characterised by projecting parts, e.g. fins to increase surface area the projecting parts being wire-shaped or pin-shaped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/62—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their interconnections
    • H10W70/63—Vias, e.g. via plugs
    • H10W70/635—Through-vias
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W44/00—Electrical arrangements for controlling or matching impedance
    • H10W44/20—Electrical arrangements for controlling or matching impedance at high-frequency [HF] or radio frequency [RF]
    • H10W44/241—Electrical arrangements for controlling or matching impedance at high-frequency [HF] or radio frequency [RF] for passive devices or passive elements
    • H10W44/248—Electrical arrangements for controlling or matching impedance at high-frequency [HF] or radio frequency [RF] for passive devices or passive elements for antennas
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/67—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
    • H10W70/68—Shapes or dispositions thereof
    • H10W70/682—Shapes or dispositions thereof comprising holes having chips therein
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/30—Die-attach connectors
    • H10W72/381—Auxiliary members
    • H10W72/387—Flow barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/851—Dispositions of multiple connectors or interconnections
    • H10W72/874—On different surfaces
    • H10W72/884—Die-attach connectors and bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/931—Shapes of bond pads
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/734—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked insulating package substrate, interposer or RDL
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/754—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked insulating package substrate, interposer or RDL

Landscapes

  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Production Of Multi-Layered Print Wiring Board (AREA)
  • Wire Bonding (AREA)
  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
JP2009294434A 2009-12-25 2009-12-25 半導体装置 Active JP5442424B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2009294434A JP5442424B2 (ja) 2009-12-25 2009-12-25 半導体装置
US12/972,894 US8373997B2 (en) 2009-12-25 2010-12-20 Semiconductor device
US13/676,569 US8729680B2 (en) 2009-12-25 2012-11-14 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009294434A JP5442424B2 (ja) 2009-12-25 2009-12-25 半導体装置

Publications (3)

Publication Number Publication Date
JP2011134956A JP2011134956A (ja) 2011-07-07
JP2011134956A5 JP2011134956A5 (https=) 2012-11-15
JP5442424B2 true JP5442424B2 (ja) 2014-03-12

Family

ID=44186434

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009294434A Active JP5442424B2 (ja) 2009-12-25 2009-12-25 半導体装置

Country Status (2)

Country Link
US (2) US8373997B2 (https=)
JP (1) JP5442424B2 (https=)

Families Citing this family (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5750937B2 (ja) * 2011-02-25 2015-07-22 富士通株式会社 半導体装置及びその製造方法
US20130187286A1 (en) * 2011-07-25 2013-07-25 Richard Schneider Lead frameless hermetic circuit package
JP6081697B2 (ja) 2011-12-07 2017-02-15 浜松ホトニクス株式会社 センサユニット及び固体撮像装置
JP6227223B2 (ja) * 2012-03-30 2017-11-08 富士通テン株式会社 半導体装置、及び半導体装置の製造方法
US9136341B2 (en) 2012-04-18 2015-09-15 Rf Micro Devices, Inc. High voltage field effect transistor finger terminations
US8846452B2 (en) * 2012-08-21 2014-09-30 Infineon Technologies Ag Semiconductor device package and methods of packaging thereof
US9917080B2 (en) 2012-08-24 2018-03-13 Qorvo US. Inc. Semiconductor device with electrical overstress (EOS) protection
US9147632B2 (en) 2012-08-24 2015-09-29 Rf Micro Devices, Inc. Semiconductor device having improved heat dissipation
US9686854B2 (en) * 2012-09-25 2017-06-20 Denso Corporation Electronic device
US8907482B2 (en) * 2012-11-08 2014-12-09 Honeywell International Inc. Integrated circuit package including wire bond and electrically conductive adhesive electrical connections
US20140326856A1 (en) * 2013-05-06 2014-11-06 Omnivision Technologies, Inc. Integrated circuit stack with low profile contacts
CN105321898A (zh) * 2014-06-03 2016-02-10 住友电木株式会社 金属基座安装基板以及金属基座安装基板安装部件
US9536803B2 (en) * 2014-09-05 2017-01-03 Qorvo Us, Inc. Integrated power module with improved isolation and thermal conductivity
US9693445B2 (en) * 2015-01-30 2017-06-27 Avago Technologies General Ip (Singapore) Pte. Ltd. Printed circuit board with thermal via
US10615158B2 (en) 2015-02-04 2020-04-07 Qorvo Us, Inc. Transition frequency multiplier semiconductor device
US10062684B2 (en) 2015-02-04 2018-08-28 Qorvo Us, Inc. Transition frequency multiplier semiconductor device
US10448805B2 (en) * 2015-09-28 2019-10-22 Bio-Medical Engineering (HK) Limited Endoscopic systems, devices and methods
WO2017094589A1 (ja) * 2015-11-30 2017-06-08 日本精工株式会社 放熱基板及び電動パワーステアリング装置
KR102595896B1 (ko) 2016-08-08 2023-10-30 삼성전자 주식회사 인쇄회로기판 및 이를 가지는 반도체 패키지
FR3073980A1 (fr) * 2017-11-23 2019-05-24 Stmicroelectronics (Grenoble 2) Sas Capot d'encapsulation pour boitier electronique et procede de fabrication
JP7122650B2 (ja) * 2018-01-22 2022-08-22 パナソニックＩｐマネジメント株式会社 半導体装置
DE102018102144A1 (de) * 2018-01-31 2019-08-01 Tdk Electronics Ag Elektronisches Bauelement
JP7005111B2 (ja) * 2018-02-09 2022-01-21 矢崎総業株式会社 電子部品実装品
WO2019181590A1 (ja) * 2018-03-23 2019-09-26 株式会社村田製作所 高周波モジュールおよび通信装置
WO2019181589A1 (ja) * 2018-03-23 2019-09-26 株式会社村田製作所 高周波モジュールおよび通信装置
JP2020126921A (ja) * 2019-02-04 2020-08-20 株式会社村田製作所 高周波モジュールおよび通信装置
GB2598674B (en) * 2019-07-11 2023-07-05 Mitsubishi Electric Corp Array antenna Apparatus
JP2021106341A (ja) * 2019-12-26 2021-07-26 株式会社村田製作所 高周波モジュールおよび通信装置
US12148679B2 (en) * 2021-02-05 2024-11-19 Advanced Semiconductor Engineering, Inc. Semiconductor device including an exposed solderable element
JP2022162487A (ja) * 2021-04-12 2022-10-24 イビデン株式会社 配線基板及び配線基板の製造方法
EP4095898A1 (en) 2021-05-25 2022-11-30 Mitsubishi Electric R&D Centre Europe B.V. Thermally improved pcb for semiconductor power die connected by via technique and assembly using such pcb
JP7590931B2 (ja) * 2021-06-16 2024-11-27 ルネサスエレクトロニクス株式会社 半導体装置
US12185468B2 (en) * 2021-12-24 2024-12-31 Nichia Corporation Wiring board and light-emitting device
IT202200008897A1 (it) * 2022-05-03 2023-11-03 St Microelectronics Srl Procedimento per fabbricare dispositivi a semiconduttore e dispositivo a semiconduttore corrispondente

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3292798B2 (ja) * 1995-10-04 2002-06-17 三菱電機株式会社 半導体装置
JPH09283544A (ja) * 1996-04-10 1997-10-31 Toshiba Corp 半導体装置
JP2002198660A (ja) * 2000-12-27 2002-07-12 Kyocera Corp 回路基板及びその製造方法
TW594888B (en) 2001-09-05 2004-06-21 Hitachi Ltd Semiconductor device and manufacturing method thereof and wireless communication device
JP3931696B2 (ja) * 2002-03-14 2007-06-20 株式会社デンソー 電子装置
JP2003347460A (ja) * 2002-05-28 2003-12-05 Kyocera Corp 電子装置
JP2004071772A (ja) * 2002-08-05 2004-03-04 Matsushita Electric Ind Co Ltd 高周波パッケージ
JP2004214258A (ja) * 2002-12-27 2004-07-29 Renesas Technology Corp 半導体モジュール
JP2004319550A (ja) * 2003-04-11 2004-11-11 Hitachi Ltd 半導体装置
JP2005353938A (ja) * 2004-06-14 2005-12-22 Renesas Technology Corp 半導体装置
JPWO2006048932A1 (ja) * 2004-11-04 2008-05-22 株式会社ルネサステクノロジ 電子装置

Also Published As

Publication number Publication date
JP2011134956A (ja) 2011-07-07
US8729680B2 (en) 2014-05-20
US20110156228A1 (en) 2011-06-30
US20130163206A1 (en) 2013-06-27
US8373997B2 (en) 2013-02-12

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