JP2011134956A5 - - Google Patents

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Publication number
JP2011134956A5
JP2011134956A5 JP2009294434A JP2009294434A JP2011134956A5 JP 2011134956 A5 JP2011134956 A5 JP 2011134956A5 JP 2009294434 A JP2009294434 A JP 2009294434A JP 2009294434 A JP2009294434 A JP 2009294434A JP 2011134956 A5 JP2011134956 A5 JP 2011134956A5
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JP
Japan
Prior art keywords
wiring
cavity
semiconductor device
semiconductor element
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Application number
JP2009294434A
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English (en)
Japanese (ja)
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JP2011134956A (ja
JP5442424B2 (ja
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Publication date
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Priority to JP2009294434A priority Critical patent/JP5442424B2/ja
Priority claimed from JP2009294434A external-priority patent/JP5442424B2/ja
Priority to US12/972,894 priority patent/US8373997B2/en
Publication of JP2011134956A publication Critical patent/JP2011134956A/ja
Priority to US13/676,569 priority patent/US8729680B2/en
Publication of JP2011134956A5 publication Critical patent/JP2011134956A5/ja
Application granted granted Critical
Publication of JP5442424B2 publication Critical patent/JP5442424B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2009294434A 2009-12-25 2009-12-25 半導体装置 Active JP5442424B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2009294434A JP5442424B2 (ja) 2009-12-25 2009-12-25 半導体装置
US12/972,894 US8373997B2 (en) 2009-12-25 2010-12-20 Semiconductor device
US13/676,569 US8729680B2 (en) 2009-12-25 2012-11-14 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009294434A JP5442424B2 (ja) 2009-12-25 2009-12-25 半導体装置

Publications (3)

Publication Number Publication Date
JP2011134956A JP2011134956A (ja) 2011-07-07
JP2011134956A5 true JP2011134956A5 (https=) 2012-11-15
JP5442424B2 JP5442424B2 (ja) 2014-03-12

Family

ID=44186434

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009294434A Active JP5442424B2 (ja) 2009-12-25 2009-12-25 半導体装置

Country Status (2)

Country Link
US (2) US8373997B2 (https=)
JP (1) JP5442424B2 (https=)

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JP5750937B2 (ja) * 2011-02-25 2015-07-22 富士通株式会社 半導体装置及びその製造方法
US20130187286A1 (en) * 2011-07-25 2013-07-25 Richard Schneider Lead frameless hermetic circuit package
JP6081697B2 (ja) 2011-12-07 2017-02-15 浜松ホトニクス株式会社 センサユニット及び固体撮像装置
JP6227223B2 (ja) * 2012-03-30 2017-11-08 富士通テン株式会社 半導体装置、及び半導体装置の製造方法
US9136341B2 (en) 2012-04-18 2015-09-15 Rf Micro Devices, Inc. High voltage field effect transistor finger terminations
US8846452B2 (en) * 2012-08-21 2014-09-30 Infineon Technologies Ag Semiconductor device package and methods of packaging thereof
US9917080B2 (en) 2012-08-24 2018-03-13 Qorvo US. Inc. Semiconductor device with electrical overstress (EOS) protection
US9147632B2 (en) 2012-08-24 2015-09-29 Rf Micro Devices, Inc. Semiconductor device having improved heat dissipation
US9686854B2 (en) * 2012-09-25 2017-06-20 Denso Corporation Electronic device
US8907482B2 (en) * 2012-11-08 2014-12-09 Honeywell International Inc. Integrated circuit package including wire bond and electrically conductive adhesive electrical connections
US20140326856A1 (en) * 2013-05-06 2014-11-06 Omnivision Technologies, Inc. Integrated circuit stack with low profile contacts
CN105321898A (zh) * 2014-06-03 2016-02-10 住友电木株式会社 金属基座安装基板以及金属基座安装基板安装部件
US9536803B2 (en) * 2014-09-05 2017-01-03 Qorvo Us, Inc. Integrated power module with improved isolation and thermal conductivity
US9693445B2 (en) * 2015-01-30 2017-06-27 Avago Technologies General Ip (Singapore) Pte. Ltd. Printed circuit board with thermal via
US10615158B2 (en) 2015-02-04 2020-04-07 Qorvo Us, Inc. Transition frequency multiplier semiconductor device
US10062684B2 (en) 2015-02-04 2018-08-28 Qorvo Us, Inc. Transition frequency multiplier semiconductor device
US10448805B2 (en) * 2015-09-28 2019-10-22 Bio-Medical Engineering (HK) Limited Endoscopic systems, devices and methods
WO2017094589A1 (ja) * 2015-11-30 2017-06-08 日本精工株式会社 放熱基板及び電動パワーステアリング装置
KR102595896B1 (ko) 2016-08-08 2023-10-30 삼성전자 주식회사 인쇄회로기판 및 이를 가지는 반도체 패키지
FR3073980A1 (fr) * 2017-11-23 2019-05-24 Stmicroelectronics (Grenoble 2) Sas Capot d'encapsulation pour boitier electronique et procede de fabrication
JP7122650B2 (ja) * 2018-01-22 2022-08-22 パナソニックＩｐマネジメント株式会社 半導体装置
DE102018102144A1 (de) * 2018-01-31 2019-08-01 Tdk Electronics Ag Elektronisches Bauelement
JP7005111B2 (ja) * 2018-02-09 2022-01-21 矢崎総業株式会社 電子部品実装品
WO2019181590A1 (ja) * 2018-03-23 2019-09-26 株式会社村田製作所 高周波モジュールおよび通信装置
WO2019181589A1 (ja) * 2018-03-23 2019-09-26 株式会社村田製作所 高周波モジュールおよび通信装置
JP2020126921A (ja) * 2019-02-04 2020-08-20 株式会社村田製作所 高周波モジュールおよび通信装置
GB2598674B (en) * 2019-07-11 2023-07-05 Mitsubishi Electric Corp Array antenna Apparatus
JP2021106341A (ja) * 2019-12-26 2021-07-26 株式会社村田製作所 高周波モジュールおよび通信装置
US12148679B2 (en) * 2021-02-05 2024-11-19 Advanced Semiconductor Engineering, Inc. Semiconductor device including an exposed solderable element
JP2022162487A (ja) * 2021-04-12 2022-10-24 イビデン株式会社 配線基板及び配線基板の製造方法
EP4095898A1 (en) 2021-05-25 2022-11-30 Mitsubishi Electric R&D Centre Europe B.V. Thermally improved pcb for semiconductor power die connected by via technique and assembly using such pcb
JP7590931B2 (ja) * 2021-06-16 2024-11-27 ルネサスエレクトロニクス株式会社 半導体装置
US12185468B2 (en) * 2021-12-24 2024-12-31 Nichia Corporation Wiring board and light-emitting device
IT202200008897A1 (it) * 2022-05-03 2023-11-03 St Microelectronics Srl Procedimento per fabbricare dispositivi a semiconduttore e dispositivo a semiconduttore corrispondente

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JP3292798B2 (ja) * 1995-10-04 2002-06-17 三菱電機株式会社 半導体装置
JPH09283544A (ja) * 1996-04-10 1997-10-31 Toshiba Corp 半導体装置
JP2002198660A (ja) * 2000-12-27 2002-07-12 Kyocera Corp 回路基板及びその製造方法
TW594888B (en) 2001-09-05 2004-06-21 Hitachi Ltd Semiconductor device and manufacturing method thereof and wireless communication device
JP3931696B2 (ja) * 2002-03-14 2007-06-20 株式会社デンソー 電子装置
JP2003347460A (ja) * 2002-05-28 2003-12-05 Kyocera Corp 電子装置
JP2004071772A (ja) * 2002-08-05 2004-03-04 Matsushita Electric Ind Co Ltd 高周波パッケージ
JP2004214258A (ja) * 2002-12-27 2004-07-29 Renesas Technology Corp 半導体モジュール
JP2004319550A (ja) * 2003-04-11 2004-11-11 Hitachi Ltd 半導体装置
JP2005353938A (ja) * 2004-06-14 2005-12-22 Renesas Technology Corp 半導体装置
JPWO2006048932A1 (ja) * 2004-11-04 2008-05-22 株式会社ルネサステクノロジ 電子装置

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