JP5436461B2 - 半導体パッケージ用複合機能テープ及びこれを用いた半導体素子の製造方法 - Google Patents
半導体パッケージ用複合機能テープ及びこれを用いた半導体素子の製造方法 Download PDFInfo
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- JP5436461B2 JP5436461B2 JP2010550605A JP2010550605A JP5436461B2 JP 5436461 B2 JP5436461 B2 JP 5436461B2 JP 2010550605 A JP2010550605 A JP 2010550605A JP 2010550605 A JP2010550605 A JP 2010550605A JP 5436461 B2 JP5436461 B2 JP 5436461B2
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- Prior art keywords
- adhesive layer
- tape
- composite functional
- adhesive
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000004065 semiconductor Substances 0.000 title claims description 86
- 239000002131 composite material Substances 0.000 title claims description 53
- 238000004519 manufacturing process Methods 0.000 title claims description 38
- 239000012790 adhesive layer Substances 0.000 claims description 278
- 238000000034 method Methods 0.000 claims description 81
- 238000000227 grinding Methods 0.000 claims description 34
- 239000000758 substrate Substances 0.000 claims description 32
- 238000003860 storage Methods 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 7
- 229920001187 thermosetting polymer Polymers 0.000 claims description 5
- 230000001678 irradiating effect Effects 0.000 claims description 4
- 230000015572 biosynthetic process Effects 0.000 claims description 2
- 239000000853 adhesive Substances 0.000 description 50
- 230000001070 adhesive effect Effects 0.000 description 50
- 230000008569 process Effects 0.000 description 49
- 238000001723 curing Methods 0.000 description 47
- 239000000203 mixture Substances 0.000 description 37
- 239000010410 layer Substances 0.000 description 25
- 239000004925 Acrylic resin Substances 0.000 description 24
- 229920000178 Acrylic resin Polymers 0.000 description 24
- 239000011230 binding agent Substances 0.000 description 23
- 239000003822 epoxy resin Substances 0.000 description 22
- 229920000647 polyepoxide Polymers 0.000 description 22
- 239000004820 Pressure-sensitive adhesive Substances 0.000 description 21
- 239000002313 adhesive film Substances 0.000 description 21
- 239000003795 chemical substances by application Substances 0.000 description 21
- 230000000052 comparative effect Effects 0.000 description 18
- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Natural products C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 description 18
- 239000002390 adhesive tape Substances 0.000 description 16
- 239000000126 substance Substances 0.000 description 16
- 238000006243 chemical reaction Methods 0.000 description 14
- 239000011203 carbon fibre reinforced carbon Substances 0.000 description 13
- 238000000576 coating method Methods 0.000 description 13
- 229920000139 polyethylene terephthalate Polymers 0.000 description 12
- 239000005020 polyethylene terephthalate Substances 0.000 description 12
- 229920003986 novolac Polymers 0.000 description 11
- 229920000642 polymer Polymers 0.000 description 11
- 230000001681 protective effect Effects 0.000 description 11
- QTWJRLJHJPIABL-UHFFFAOYSA-N 2-methylphenol;3-methylphenol;4-methylphenol Chemical compound CC1=CC=C(O)C=C1.CC1=CC=CC(O)=C1.CC1=CC=CC=C1O QTWJRLJHJPIABL-UHFFFAOYSA-N 0.000 description 10
- 150000001875 compounds Chemical class 0.000 description 10
- 229930003836 cresol Natural products 0.000 description 10
- 239000011248 coating agent Substances 0.000 description 9
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 125000000524 functional group Chemical group 0.000 description 8
- 229920000098 polyolefin Polymers 0.000 description 8
- 230000009477 glass transition Effects 0.000 description 7
- 238000009281 ultraviolet germicidal irradiation Methods 0.000 description 7
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 6
- -1 polyethylene Polymers 0.000 description 6
- 239000004593 Epoxy Substances 0.000 description 5
- 239000006087 Silane Coupling Agent Substances 0.000 description 5
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 5
- 239000007795 chemical reaction product Substances 0.000 description 5
- 238000010030 laminating Methods 0.000 description 5
- 238000003801 milling Methods 0.000 description 5
- 238000004806 packaging method and process Methods 0.000 description 5
- 229920003023 plastic Polymers 0.000 description 5
- 239000004033 plastic Substances 0.000 description 5
- 230000002829 reductive effect Effects 0.000 description 5
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 4
- 239000003522 acrylic cement Substances 0.000 description 4
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 4
- 229920001577 copolymer Polymers 0.000 description 4
- 239000000945 filler Substances 0.000 description 4
- 229920005992 thermoplastic resin Polymers 0.000 description 4
- 238000012546 transfer Methods 0.000 description 4
- DQZNLOXENNXVAD-UHFFFAOYSA-N trimethoxy-[2-(7-oxabicyclo[4.1.0]heptan-4-yl)ethyl]silane Chemical compound C1C(CC[Si](OC)(OC)OC)CCC2OC21 DQZNLOXENNXVAD-UHFFFAOYSA-N 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 238000004132 cross linking Methods 0.000 description 3
- IQPQWNKOIGAROB-UHFFFAOYSA-N isocyanate group Chemical group [N-]=C=O IQPQWNKOIGAROB-UHFFFAOYSA-N 0.000 description 3
- 230000007246 mechanism Effects 0.000 description 3
- 238000012858 packaging process Methods 0.000 description 3
- 238000000053 physical method Methods 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- NLHHRLWOUZZQLW-UHFFFAOYSA-N Acrylonitrile Chemical compound C=CC#N NLHHRLWOUZZQLW-UHFFFAOYSA-N 0.000 description 2
- JOYRKODLDBILNP-UHFFFAOYSA-N Ethyl urethane Chemical compound CCOC(N)=O JOYRKODLDBILNP-UHFFFAOYSA-N 0.000 description 2
- 229920000877 Melamine resin Polymers 0.000 description 2
- 239000004698 Polyethylene Substances 0.000 description 2
- 238000003848 UV Light-Curing Methods 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 125000005396 acrylic acid ester group Chemical group 0.000 description 2
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 2
- 229920005822 acrylic binder Polymers 0.000 description 2
- 229920000800 acrylic rubber Polymers 0.000 description 2
- 229920006223 adhesive resin Polymers 0.000 description 2
- 150000001412 amines Chemical class 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 239000007822 coupling agent Substances 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 230000001771 impaired effect Effects 0.000 description 2
- 239000010954 inorganic particle Substances 0.000 description 2
- 239000012948 isocyanate Substances 0.000 description 2
- 150000002513 isocyanates Chemical class 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- JDSHMPZPIAZGSV-UHFFFAOYSA-N melamine Chemical compound NC1=NC(N)=NC(N)=N1 JDSHMPZPIAZGSV-UHFFFAOYSA-N 0.000 description 2
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 2
- 229910052753 mercury Inorganic materials 0.000 description 2
- 125000005397 methacrylic acid ester group Chemical group 0.000 description 2
- 239000000178 monomer Substances 0.000 description 2
- 238000012536 packaging technology Methods 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 239000002985 plastic film Substances 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 229920000058 polyacrylate Polymers 0.000 description 2
- 229920000573 polyethylene Polymers 0.000 description 2
- 229920001228 polyisocyanate Polymers 0.000 description 2
- 239000005056 polyisocyanate Substances 0.000 description 2
- 239000002861 polymer material Substances 0.000 description 2
- 238000006116 polymerization reaction Methods 0.000 description 2
- 229920002635 polyurethane Polymers 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 238000009864 tensile test Methods 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 description 1
- WOYWLLHHWAMFCB-UHFFFAOYSA-N 2-ethylhexyl acetate Chemical compound CCCCC(CC)COC(C)=O WOYWLLHHWAMFCB-UHFFFAOYSA-N 0.000 description 1
- UUEWCQRISZBELL-UHFFFAOYSA-N 3-trimethoxysilylpropane-1-thiol Chemical compound CO[Si](OC)(OC)CCCS UUEWCQRISZBELL-UHFFFAOYSA-N 0.000 description 1
- 239000004342 Benzoyl peroxide Substances 0.000 description 1
- OMPJBNCRMGITSC-UHFFFAOYSA-N Benzoylperoxide Chemical compound C=1C=CC=CC=1C(=O)OOC(=O)C1=CC=CC=C1 OMPJBNCRMGITSC-UHFFFAOYSA-N 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- 241001050985 Disco Species 0.000 description 1
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 1
- 239000005977 Ethylene Substances 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 1
- WOBHKFSMXKNTIM-UHFFFAOYSA-N Hydroxyethyl methacrylate Chemical compound CC(=C)C(=O)OCCO WOBHKFSMXKNTIM-UHFFFAOYSA-N 0.000 description 1
- VVQNEPGJFQJSBK-UHFFFAOYSA-N Methyl methacrylate Chemical compound COC(=O)C(C)=C VVQNEPGJFQJSBK-UHFFFAOYSA-N 0.000 description 1
- 239000002998 adhesive polymer Substances 0.000 description 1
- 239000004840 adhesive resin Substances 0.000 description 1
- 125000003277 amino group Chemical group 0.000 description 1
- 235000019400 benzoyl peroxide Nutrition 0.000 description 1
- ZLQQRVUZZZCWKL-UHFFFAOYSA-N bis(2-cyanopropan-2-yl)azaniumylideneazanide Chemical compound N#CC(C)(C)[N+](=[N-])C(C)(C)C#N ZLQQRVUZZZCWKL-UHFFFAOYSA-N 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- CQEYYJKEWSMYFG-UHFFFAOYSA-N butyl acrylate Chemical compound CCCCOC(=O)C=C CQEYYJKEWSMYFG-UHFFFAOYSA-N 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000003851 corona treatment Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 239000004205 dimethyl polysiloxane Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 125000003700 epoxy group Chemical group 0.000 description 1
- HQQADJVZYDDRJT-UHFFFAOYSA-N ethene;prop-1-ene Chemical group C=C.CC=C HQQADJVZYDDRJT-UHFFFAOYSA-N 0.000 description 1
- UHESRSKEBRADOO-UHFFFAOYSA-N ethyl carbamate;prop-2-enoic acid Chemical compound OC(=O)C=C.CCOC(N)=O UHESRSKEBRADOO-UHFFFAOYSA-N 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 238000007756 gravure coating Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 150000002576 ketones Chemical class 0.000 description 1
- 230000000670 limiting effect Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- RBQRWNWVPQDTJJ-UHFFFAOYSA-N methacryloyloxyethyl isocyanate Chemical compound CC(=C)C(=O)OCCN=C=O RBQRWNWVPQDTJJ-UHFFFAOYSA-N 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000004843 novolac epoxy resin Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000036961 partial effect Effects 0.000 description 1
- 238000007719 peel strength test Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 229920006255 plastic film Polymers 0.000 description 1
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
- 229920001748 polybutylene Polymers 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920005596 polymer binder Polymers 0.000 description 1
- 239000002491 polymer binding agent Substances 0.000 description 1
- 229920006254 polymer film Polymers 0.000 description 1
- 239000004926 polymethyl methacrylate Substances 0.000 description 1
- 229920005862 polyol Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 238000010992 reflux Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000007763 reverse roll coating Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 150000003384 small molecules Chemical class 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 229920003048 styrene butadiene rubber Polymers 0.000 description 1
- TXDNPSYEJHXKMK-UHFFFAOYSA-N sulfanylsilane Chemical compound S[SiH3] TXDNPSYEJHXKMK-UHFFFAOYSA-N 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
- 229920001169 thermoplastic Polymers 0.000 description 1
- 229920002725 thermoplastic elastomer Polymers 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 239000006097 ultraviolet radiation absorber Substances 0.000 description 1
- 229920002554 vinyl polymer Polymers 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J7/00—Adhesives in the form of films or foils
- C09J7/20—Adhesives in the form of films or foils characterised by their carriers
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J7/00—Adhesives in the form of films or foils
- C09J7/30—Adhesives in the form of films or foils characterised by the adhesive composition
- C09J7/35—Heat-activated
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J7/00—Adhesives in the form of films or foils
- C09J7/30—Adhesives in the form of films or foils characterised by the adhesive composition
- C09J7/38—Pressure-sensitive adhesives [PSA]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/52—Mounting semiconductor bodies in containers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/27—Manufacturing methods
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
- C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2301/00—Additional features of adhesives in the form of films or foils
- C09J2301/20—Additional features of adhesives in the form of films or foils characterized by the structural features of the adhesive itself
- C09J2301/208—Additional features of adhesives in the form of films or foils characterized by the structural features of the adhesive itself the adhesive layer being constituted by at least two or more adjacent or superposed adhesive layers, e.g. multilayer adhesive
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/568—Temporary substrate used as encapsulation process aid
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
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Description
従来のパッケージング技術においては、多層チップ積層パッケージ(multi−chip package)(MCP)方法が主に用いられてきた。これは複数のチップを接着剤により互いに上下に積層し、チップをワイヤボンディングを用いて互いに電気的に連結する構造である。その結果、ワイヤボンディングのスペース分だけ、パッケージ全体の大きさが積層されたチップの体積より大きくなり、不必要な空間が存在した。
MCP方法およびWSP方法は、いずれも複数のチップを接着剤により接着して上下に積層する方式で、量的な側面から半導体デバイスの容量を増やす方法である。この中でMCP方法は、ワイヤボンディングによりチップとチップを電気的に連結するので、各チップは開放端の回路形成面を有し、その反対面(すなわち研削された面(ground side))に接着剤を塗布してチップを互いに連結するようになっている。
ところが、WSP方法は、ワイヤボンディングではなく、チップとチップを貫通電極により直接連結するので、チップの回路形成面に接着剤を塗布してチップを連結しなければならない。
本実施形態の複合機能テープ10の基材フィルム100について説明する。
本実施形態の複合機能テープ10を構成する紫外線硬化型粘着層100について説明する。
本実施形態に係る複合機能テープ10は、基材フィルム100上に粘着層110をコーティングし、粘着層110上に第1の(絶縁)接着層105が積層されている。
次に、複合機能テープ10の第2の(絶縁)接着層120について説明する。
次は、本発明の一実施形態による複合機能テープの保護フィルム6について説明する。
1.粘着層A−1製造
還流冷却器、温度計、ドロッピングパネルを備えた2L容量の4口フラスコに、エチルアセテート220g、トルエン150gを入れた。
アクリル樹脂WS−023(水酸基価あるいは酸価20mgKOH/g、Tg −5℃、平均分子量500,000、水酸基あるいはカルボキシル基含有量20、ナガセケムテックス社)260g、クレゾールノボラック型エポキシ樹脂YDCN−500−4P(分子量10,000以下、Kukdo Chemical社)120g、クレゾールノボラック型硬化剤MEH−7800SS(明和プラスチック産業社)40g、イミダゾール硬化促進剤2P4MZ(四国化学社)0.1g、メルカプトシランカップリング剤KBM−803(信越化学社)0.5g、エポキシシランカップリング剤KBM−303(信越化学社)0.5g及び無定形シリカ充填剤OX−50(Degussa社)20g、内在型粘着バインダーCA−100を8g、0.1gのIC−184(Ciba−Geigy社)を混合し、混合物を500rpmで2時間程度1次分散させた後、ミリングした。
アクリル樹脂SG−80H(重量平均分子量350,000、Tg7.5℃、ナガセケムテックス社)150g、クレゾールノボラック型エポキシ樹脂YDCN−500−90P(分子量10,000以下、Kukdo Chemical社)150g、クレゾールノボラック系硬化剤MEH−7800SS(明和プラスチック産業社)20g、イミダゾール硬化促進剤2P4MZ(四国化学社)0.8g、エポキシシランカップリング剤KBM−303(信越化学社)0.4g及び無定形シリカ充填剤OX−50(Degussa社)40gを混合し、混合物を500rpmで2時間程度1次分散させた後、ミリングした。
4.接着フィルムD−1製造
製造した粘着層A−1、第1の絶縁接着層B−1、第2の絶縁接着層C−1をラミネータを用いて順に積層させ、接着フィルムD−1を製造した。
1.粘着層a−1製造
アクリル粘着バインダーAT−4842(Tg −50℃、重量平均分子量600,000、Samwon Chemical社)100gに6官能ウレタンアクリレートU−324A(新中村社)80gを混合し、1gのポリイソシアネート硬化剤L−45(日本ポリウレタン社)および1.8gのIC−184(Ciba−Geigy社)を混合物に添加し、紫外線硬化型粘着組成物を製造した。製造した紫外線硬化型粘着組成物を38ミクロンのPET離型フィルムSRD−T38(Saehan Media社)の片面にアプリケータを用いて10ミクロンの厚さにコーティングし、80℃で2分間乾燥させた。さらに、100ミクロンのPOフィルムOD−100(Riken Technos社)に60℃の温度で積層後、40℃のオーブンで3日間エージングし、粘着層a−1を製造した。
比較例2は、第1の接着層の製造において、紫外線硬化剤(光開始剤)であるIC−184を添加していないことを除いて、実施例1と同様にして製造した。
1.第2の絶縁接着層c−1製造
アクリル樹脂KLS−1045(重量平均分子量750,000、Tg 30℃、藤倉社)150g、クレゾールノボラック型エポキシ樹脂YDCN−500−90P(分子量10,000以下、Kukdo Chemical社)150g、クレゾールノボラック系硬化剤MEH−7800SS(明和プラスチック産業社)20g、イミダゾール硬化促進剤2P4MZ(四国化学社)0.8g、エポキシシランカップリング剤KBM−303(信越化学社)0.4g及び無定形シリカ充填剤OX−50(Degussa社)40gを混合し、混合物を500rpmで2時間程度1次分散させた後、ミリングを実施した。
第2の絶縁接着層c−1を除いては、粘着層A−1および第1の接着フィルムB−1は、実施例1と同様の方法により製造し、製造した第2の絶縁接着層c−1、粘着層A−1および第1の接着層B−1を順にラミネータを用いて積層して接着フィルムd−3を製造した。
1.単一接着層c−2製造
アクリル樹脂WS−023(水酸基価あるいは酸価20mgKOH/g、Tg−5℃、平均分子量500,000、水酸基あるいはカルボキシル基含有量20、ナガセケムテックス社)150g、クレゾールノボラック型エポキシ樹脂YDCN−500−90P(分子量10,000以下、Kukdo Chemical社)150g、クレゾールノボラック硬化剤MEH−7800SS(明和プラスチック産業社)20g、イミダゾール硬化促進剤2P4MZ(四国化学社)0.8g、エポキシシランカップリング剤KBM−303(信越化学社)0.4g及び無定形シリカ充填剤OX−50(Degussa社)40gを混合し、混合物を500rpmで2時間程度1次分散させた後、ミリングした。
(1)ウエハの裏面研削性(BG)
実施例1及び比較例1〜4によって得られた接着フィルムを裏面研磨装置を用いて720ミクロンのウエハにマウントし、基材フィルムの裏面は80ミクロンの深さまで裏面研削した。試験結果は下記の通り判断した。
ウエハの損傷及びマイクロクラックの発生がある(×)
(2)粘着層および第1の絶縁接着層間の180°平均剥離力測定(UV硬化の前後)
180°剥離力試験は、JIS Z0237規格に基づいて実施した。
実施例及び比較例によって得られた接着フィルムから、保護フィルムを除去した後に、各接着フィルムを60℃で8インチウエハの一面にAaron社のMounter AR−08WMを用いてマウントした。
第1の絶縁接着層の破れ、脱離、伸長がある(×)
(4)マウント時のボイド、チッピング、チップクラック
実施例及び比較例を通じて得られた接着フィルムを、Aaron社のMounter AR−08WMを用いて、バンプが形成された8インチ80μm厚さのウエハの表面に60℃で熱圧着させた後、Nikon社の光学顕微鏡ME600Lを用いて表面のボイドの状態を観察した。
ボイド、チッピング、チップクラックがある(×)
(5)貯蔵弾性率
実施例及び比較例で得られた接着フィルム中、第2の絶縁接着層を厚さ200μm、幅7mm×長さ14mmに切断した後、DMA Q800(TA Instrument社)を用いて−10℃〜150℃に昇温速度4℃/minで温度を上げながら貯蔵弾性率を測定した。本試験では60℃のデータを採用した。
二酸化膜でコーティングがされている厚さ525μmのウエハを5mm×5mmの大きさに切った後、第1の絶縁接着層及び第2の絶縁接着層のみ60℃の条件でウエハに積層し、接着部分のみ残して切り落とした。
Claims (8)
- 基材フィルムの一面に形成された紫外線硬化型粘着層、前記粘着層上に形成される第1の接着層及び第2の接着層を備える複合機能テープであって、
複数の素子を有する半導体基板の素子形成面の反対面を研削する工程と、前記半導体基板をそれぞれのチップにダイシングする工程を行う間、前記複合機能テープは複数の素子を有する半導体基板の素子形成面に接着され前記ダイシングする工程により分離されたそれぞれのチップをピックアップしてダイアタッチする間、複合機能テープの前記第1の接着層と第2の接着層はそれぞれのチップに接着していることを特徴とする半導体パッケージ用複合機能テープ。 - 前記第1の接着層は、前記粘着層への紫外線照射後の粘着層および第2の接着層との剥離性を改善するために、粘着層と第2の接着層との間に介在し、紫外線硬化型質を含でいることを特徴とする請求項1に記載の半導体パッケージ用複合機能テープ。
- 前記第1の接着層は、紫外線照射後の前記粘着層に対する180°平均剥離力が0.1N/25mm以下であることを特徴とする請求項1又は2に記載の半導体パッケージ用複合機能テープ。
- 前記第1の接着層および第2の接着層は、熱硬化型であることを特徴とする請求項1〜3のいずれか1項に記載の半導体パッケージ用複合機能テープ。
- 前記第2の接着層は、60℃での貯蔵弾性率が0.1〜10MPaであることを特徴とする請求項1〜4のいずれか1項に記載の半導体パッケージ用複合機能テープ。
- 基材フィルムの一面上の紫外線硬化型粘着層、前記粘着層上の第1の接着層及び第2の接着層を備える複合機能テープをバンプが形成された半導体基板に接着する工程と、
前記半導体基板の裏面を研削する工程と、
前記半導体基板をそれぞれのチップにダイシングする工程と、
前記第1の接着層および第2の接着層が接着された前記チップをピックアップする工程と、
前記チップを前記第1の接着層及び第2の接着層を用いてダイアタッチする工程と、
を含む半導体素子の製造方法。 - 前記ダイシングする工程後、ピックアップする工程前に、前記テープに紫外線を照射する工程をさらに含むことを特徴とする請求項6に記載の半導体素子の製造方法。
- 前記ピックアップする工程前に前記複合機能テープをエクスパンドし、ダイシングされた前記それぞれのチップの間隔を広げる工程をさらに含むことを特徴とする請求項6または7に記載の半導体素子の製造方法。
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KR10-2008-0024027 | 2008-03-14 | ||
KR1020080024027A KR100963675B1 (ko) | 2008-03-14 | 2008-03-14 | 반도체 패키징용 복합기능 테이프 및 이를 이용한 반도체소자의 제조방법 |
PCT/KR2009/001264 WO2009113831A2 (ko) | 2008-03-14 | 2009-03-13 | 반도체 패키징용 복합기능 테이프 및 이를 이용한 반도체 소자의 제조방법 |
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JP (1) | JP5436461B2 (ja) |
KR (1) | KR100963675B1 (ja) |
CN (1) | CN101971311B (ja) |
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US8309219B2 (en) | 2012-11-13 |
KR100963675B1 (ko) | 2010-06-15 |
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WO2009113831A3 (ko) | 2009-12-10 |
TW201001565A (en) | 2010-01-01 |
CN101971311A (zh) | 2011-02-09 |
JP2011515839A (ja) | 2011-05-19 |
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US20100330780A1 (en) | 2010-12-30 |
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