JP5416881B2 - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法 Download PDF

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Publication number
JP5416881B2
JP5416881B2 JP2006283219A JP2006283219A JP5416881B2 JP 5416881 B2 JP5416881 B2 JP 5416881B2 JP 2006283219 A JP2006283219 A JP 2006283219A JP 2006283219 A JP2006283219 A JP 2006283219A JP 5416881 B2 JP5416881 B2 JP 5416881B2
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Japan
Prior art keywords
wiring
film
layer
forming
tantalum nitride
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Expired - Fee Related
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JP2006283219A
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Japanese (ja)
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JP2007142382A5 (enExample
JP2007142382A (ja
Inventor
真之 坂倉
英人 大沼
秀明 桑原
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2006283219A priority Critical patent/JP5416881B2/ja
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Publication of JP2007142382A5 publication Critical patent/JP2007142382A5/ja
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  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Thin Film Transistor (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
JP2006283219A 2005-10-18 2006-10-18 半導体装置の作製方法 Expired - Fee Related JP5416881B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2006283219A JP5416881B2 (ja) 2005-10-18 2006-10-18 半導体装置の作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2005303674 2005-10-18
JP2005303674 2005-10-18
JP2006283219A JP5416881B2 (ja) 2005-10-18 2006-10-18 半導体装置の作製方法

Publications (3)

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JP2007142382A JP2007142382A (ja) 2007-06-07
JP2007142382A5 JP2007142382A5 (enExample) 2009-11-12
JP5416881B2 true JP5416881B2 (ja) 2014-02-12

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JP2006283219A Expired - Fee Related JP5416881B2 (ja) 2005-10-18 2006-10-18 半導体装置の作製方法

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Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101382728B (zh) * 2007-09-07 2010-07-28 北京京东方光电科技有限公司 灰阶掩膜版结构
CN101387825B (zh) * 2007-09-10 2011-04-06 北京京东方光电科技有限公司 补偿型灰阶掩膜版结构
JP2009086385A (ja) * 2007-09-29 2009-04-23 Hoya Corp フォトマスク及びフォトマスクの製造方法、並びにパターン転写方法
JP5377940B2 (ja) * 2007-12-03 2013-12-25 株式会社半導体エネルギー研究所 半導体装置
US9041202B2 (en) 2008-05-16 2015-05-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method of the same
US8945981B2 (en) * 2008-07-31 2015-02-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
WO2010032640A1 (en) 2008-09-19 2010-03-25 Semiconductor Energy Laboratory Co., Ltd. Display device
KR101041139B1 (ko) * 2008-11-04 2011-06-13 삼성모바일디스플레이주식회사 박막트랜지스터, 그의 제조방법 및 그를 포함하는 유기전계발광표시장치
TWI907190B (zh) * 2009-08-07 2025-12-01 日商半導體能源研究所股份有限公司 半導體裝置
KR101428697B1 (ko) * 2013-07-11 2014-08-11 숭실대학교산학협력단 박막패턴 어레이 및 그 제조방법
WO2024178680A1 (zh) * 2023-03-01 2024-09-06 京东方科技集团股份有限公司 掩膜板、显示基板、显示面板和显示装置

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02156624A (ja) * 1988-12-09 1990-06-15 Mitsubishi Electric Corp 半導体装置の製造方法
JPH03104190A (ja) * 1989-09-18 1991-05-01 Toshiba Corp 多層配線板およびその製造方法
JP2001185616A (ja) * 1999-12-24 2001-07-06 Seiko Epson Corp 半導体装置及びその製造方法
JP2001201756A (ja) * 2000-01-19 2001-07-27 Sakae Tanaka 液晶表示装置の製造方法と製造装置
JP2001242483A (ja) * 2000-02-25 2001-09-07 Hitachi Ltd 液晶表示装置及びその配線構造
JP4954401B2 (ja) * 2000-08-11 2012-06-13 株式会社半導体エネルギー研究所 半導体装置の製造方法
JP4401641B2 (ja) * 2001-11-07 2010-01-20 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP2003223119A (ja) * 2002-01-30 2003-08-08 Toshiba Corp 表示装置およびその製造方法
JP5046565B2 (ja) * 2005-06-10 2012-10-10 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP5137342B2 (ja) * 2005-06-30 2013-02-06 株式会社半導体エネルギー研究所 半導体装置の作製方法

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JP2007142382A (ja) 2007-06-07

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