JP5412759B2 - エピタキシャルウェーハの保持具及びそのウェーハの製造方法 - Google Patents

エピタキシャルウェーハの保持具及びそのウェーハの製造方法 Download PDF

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Publication number
JP5412759B2
JP5412759B2 JP2008197723A JP2008197723A JP5412759B2 JP 5412759 B2 JP5412759 B2 JP 5412759B2 JP 2008197723 A JP2008197723 A JP 2008197723A JP 2008197723 A JP2008197723 A JP 2008197723A JP 5412759 B2 JP5412759 B2 JP 5412759B2
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Japan
Prior art keywords
wafer
lift
lift pin
susceptor
hole
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JP2008197723A
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English (en)
Japanese (ja)
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JP2010034476A (ja
JP2010034476A5 (enrdf_load_stackoverflow
Inventor
雅哉 櫻井
昌幸 石橋
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Sumco Corp
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Sumco Corp
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Publication date
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Priority to JP2008197723A priority Critical patent/JP5412759B2/ja
Priority to DE112009001826.2T priority patent/DE112009001826B4/de
Priority to US13/003,440 priority patent/US8980001B2/en
Priority to PCT/JP2009/063243 priority patent/WO2010013646A1/ja
Publication of JP2010034476A publication Critical patent/JP2010034476A/ja
Publication of JP2010034476A5 publication Critical patent/JP2010034476A5/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/12—Substrate holders or susceptors
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1016—Apparatus with means for treating single-crystal [e.g., heat treating]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Inorganic Chemistry (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Chemical Vapour Deposition (AREA)
JP2008197723A 2008-07-31 2008-07-31 エピタキシャルウェーハの保持具及びそのウェーハの製造方法 Active JP5412759B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2008197723A JP5412759B2 (ja) 2008-07-31 2008-07-31 エピタキシャルウェーハの保持具及びそのウェーハの製造方法
DE112009001826.2T DE112009001826B4 (de) 2008-07-31 2009-07-24 Herstellungsverfahren für einen epitaktischen Wafer und die dabei zum Halten des Wafer verwendete Haltevorrichtung
US13/003,440 US8980001B2 (en) 2008-07-31 2009-07-24 Method for manufacturing epitaxial wafer and wafer holder used in the method
PCT/JP2009/063243 WO2010013646A1 (ja) 2008-07-31 2009-07-24 エピタキシャルウェーハの製造方法及びそれに用いられるウェーハの保持具

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008197723A JP5412759B2 (ja) 2008-07-31 2008-07-31 エピタキシャルウェーハの保持具及びそのウェーハの製造方法

Publications (3)

Publication Number Publication Date
JP2010034476A JP2010034476A (ja) 2010-02-12
JP2010034476A5 JP2010034476A5 (enrdf_load_stackoverflow) 2011-09-15
JP5412759B2 true JP5412759B2 (ja) 2014-02-12

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JP2008197723A Active JP5412759B2 (ja) 2008-07-31 2008-07-31 エピタキシャルウェーハの保持具及びそのウェーハの製造方法

Country Status (4)

Country Link
US (1) US8980001B2 (enrdf_load_stackoverflow)
JP (1) JP5412759B2 (enrdf_load_stackoverflow)
DE (1) DE112009001826B4 (enrdf_load_stackoverflow)
WO (1) WO2010013646A1 (enrdf_load_stackoverflow)

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JP5698043B2 (ja) * 2010-08-04 2015-04-08 株式会社ニューフレアテクノロジー 半導体製造装置
CN102747418B (zh) * 2012-07-25 2015-12-16 东莞市天域半导体科技有限公司 一种高温大面积碳化硅外延生长装置及处理方法
JP6017328B2 (ja) * 2013-01-22 2016-10-26 東京エレクトロン株式会社 載置台及びプラズマ処理装置
JP5999511B2 (ja) * 2013-08-26 2016-09-28 信越半導体株式会社 気相エピタキシャル成長装置及びそれを用いたエピタキシャルウェーハの製造方法
JP6153095B2 (ja) * 2014-12-19 2017-06-28 信越半導体株式会社 エピタキシャルウェーハの製造方法
KR101548903B1 (ko) 2015-03-19 2015-09-04 (주)코미코 리프트 핀 및 이의 제조 방법
JP6424726B2 (ja) 2015-04-27 2018-11-21 株式会社Sumco サセプタ及びエピタキシャル成長装置
TWI615917B (zh) * 2015-04-27 2018-02-21 Ｓｕｍｃｏ股份有限公司 承托器及磊晶生長裝置
JP6539929B2 (ja) 2015-12-21 2019-07-10 昭和電工株式会社 ウェハ支持機構、化学気相成長装置およびエピタキシャルウェハの製造方法
JP6500792B2 (ja) * 2016-01-25 2019-04-17 株式会社Sumco エピタキシャルウェーハの品質評価方法および製造方法
JP7175766B2 (ja) * 2016-03-28 2022-11-21 アプライド マテリアルズ インコーポレイテッド サセプタ支持体
TWI729101B (zh) * 2016-04-02 2021-06-01 美商應用材料股份有限公司 用於旋轉料架基座中的晶圓旋轉的設備及方法
JP2018026503A (ja) * 2016-08-12 2018-02-15 株式会社Sumco サセプタ、エピタキシャル成長装置、及びエピタキシャルウェーハの製造方法
US20180102247A1 (en) * 2016-10-06 2018-04-12 Asm Ip Holding B.V. Substrate processing apparatus and method of manufacturing semiconductor device
CN106607320B (zh) * 2016-12-22 2019-10-01 武汉华星光电技术有限公司 适用于柔性基板的热真空干燥装置
US11264265B2 (en) * 2017-02-02 2022-03-01 Sumco Corporation Lift pin, and epitaxial growth apparatus and method of producing silicon epitaxial wafer using the lift pin
US10755955B2 (en) 2018-02-12 2020-08-25 Applied Materials, Inc. Substrate transfer mechanism to reduce back-side substrate contact
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JP7192756B2 (ja) * 2019-12-19 2022-12-20 株式会社Sumco 気相成長装置及び気相成長方法
JP7519784B2 (ja) * 2020-02-19 2024-07-22 グローバルウェーハズ・ジャパン株式会社 シリコンウェーハの製造方法
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Also Published As

Publication number Publication date
US20110114014A1 (en) 2011-05-19
US8980001B2 (en) 2015-03-17
JP2010034476A (ja) 2010-02-12
WO2010013646A1 (ja) 2010-02-04
DE112009001826B4 (de) 2016-02-25
DE112009001826T5 (de) 2011-06-09

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